Abstract: A level sensor to determine a height level of a substrate, that includes a projection unit including a projection grating having a period P, the projection grating configured to provide a patterned measurement beam, to the substrate, having a periodically varying intensity distribution in a first direction having the period P; a detection unit to receive a reflected patterned measurement beam after reflection on the substrate, the reflected patterned measurement beam having a periodically varying intensity distribution in a second direction, having the period P, wherein the detection unit has a sensor array to receive the reflected patterned measurement beam, the sensor array including a plurality of sensing elements arranged along the second direction at a pitch p smaller than or equal to half the period P, and a processing unit to determine the height level of the substrate based on a signal from the sensor.

Abstract: A measurement substrate for measuring a condition pertaining in an apparatus for processing production substrates during operation thereof, the measurement substrate including: a body having dimensions compatible with the apparatus; a plurality of sensor modules embedded in the body, each sensor module having: a sensor configured generate an analog measurement signal, an analog to digital converter to generate digital measurement information from the analog measurement signal, and a module controller configured to output the digital measurement information; and a central control module configured to receive the digital measurement information from each of the module controllers and to communicate the digital measurement information to an external device.

Abstract: A method to improve a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic projection apparatus having an illumination system and projection optics, the method including: obtaining an illumination source shape and a mask defocus value; optimizing a dose of the lithographic process; and optimizing the portion of the design layout for each of a plurality of slit positions of the illumination source.

Abstract: A method of measuring a parameter of interest relating to a structure formed by a process on a substrate, and associated apparatuses. The method includes measuring the structure with measurement radiation including a first illumination acquisition setting (determining one or more selected from: a wavelength, a polarization or an incident angle of the measurement radiation) to obtain a first measurement value for the structure. The method further includes estimating, by applying a correction model to the first measurement value, at least a second measurement value for the structure corresponding to measurement of the structure with a second illumination acquisition setting different from the first illumination acquisition setting.

Abstract: Systems and methods for process simulation are described. The methods may use a reference model identifying sensitivity of a reference scanner to a set of tunable parameters. Chip fabrication from a chip design may be simulated using the reference model, wherein the chip design is expressed as one or more masks. An iterative retuning and simulation process may be used to optimize critical dimension in the simulated chip and to obtain convergence of the simulated chip with an expected chip. Additionally, a designer may be provided with a set of results from which an updated chip design is created.

Abstract: A lithographic apparatus is described, the apparatus comprising: an illumination system configured to condition a radiation beam; a support constructed to support a patterning device, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam; a substrate table constructed to hold a substrate; and a projection system configured to project the patterned radiation beam onto a target portion of the substrate, wherein the apparatus further comprises an alignment system configured to perform, for one or more alignment marks that are present on the substrate: —a plurality of alignment mark position measurements for the alignment mark by applying a respective plurality of different alignment measurement parameters, thereby obtaining a plurality of measured alignment mark positions for the alignment mark; the apparatus further comprising a processing unit, the processing unit being configured to: —determine, for each of the plurality of a

Abstract: A metrology apparatus includes first (21) and second (22) radiation sources which generate first (iB1) and second (iB2) illumination beams of different spatial extent and/or angular range. One of the illumination beams is selected, e.g. according to the size of target to be measured. The beam selection can be made by a tillable mirror (254) at a back-projected substrate plane in a Kohler illumination setup.

Abstract: A method of modifying a lithographic apparatus comprising an illumination system for providing a radiation beam, a support structure for supporting a patterning device to impart the radiation beam with a pattern in its cross-section, a first lens for projecting the radiation beam at the patterning device with a first magnification, a substrate table for holding a substrate, and a first projection system for projecting the patterned radiation beam at a target portion of the substrate with a second magnification. The first lens and the first projection system together provide a third magnification. The method comprises reducing by a first factor the first magnification to provide a second lens for projecting the radiation beam with a fourth magnification; and increasing by the first factor the second magnification to provide a second projection system for projecting the patterned radiation beam at the target portion of the substrate with a fifth magnification.

Abstract: The present invention is concerned with an apparatus for shielding a reticle for EUV lithography. The apparatus comprises a pellicle, and at least one actuator in communication with the pellicle, the actuator being configured to induce, in use, movement of the pellicle with respect to a reticle.

Abstract: Methods and apparatuses for measuring a target formed on a substrate. The target includes an alignment structure and a metrology structure. In one method, a first measurement process is performed that includes illuminating the target with first radiation and detecting radiation resulting from scattering of the first radiation from the target. A second measurement process includes illuminating the target with second radiation and detecting radiation resulting from scattering of the second radiation from the target. The first measurement process detects a position of the alignment structure. The second measurement process uses the position of the alignment structure detected by the first measurement process to align a radiation spot of the second radiation onto a desired location within the metrology structure.

Abstract: An inspection method determines values of profile parameters of substrate patterns. A baseline substrate with a baseline pattern target (BP) is produced that has a profile described by profile parameters, for example CD (median critical dimension), SWA (side wall angle) and RH (resist height). Scatterometry is used to obtain first and second signals from first and second targets. Values of differential pattern profile parameters are calculated using a Bayesian differential cost function based on a difference between the baseline pupil and the perturbed pupil and dependence of the pupil on pattern profile parameters. For example, the difference is measured between a baseline process and a perturbed process for stability control of a lithographic process. Fed-forward differential stack parameters are also calculated from observations of stack targets on the same substrates as the pattern targets.

Abstract: A structure of interest (T) is irradiated with radiation for example in the x-ray or EUV waveband, and scattered radiation is detected by a detector (19, 274, 908, 1012). A processor (PU) calculates a property such as linewidth (CD) or overlay (OV), for example by simulating (S16) interaction of radiation with a structure and comparing (S17) the simulated interaction with the detected radiation. The method is modified (S14a, S15a, S19a) to take account of changes in the structure which are caused by the inspection radiation. These changes may be for example shrinkage of the material, or changes in its optical characteristics. The changes may be caused by inspection radiation in the current observation or in a previous observation.

Abstract: A fluid handling structure for a lithographic apparatus, the fluid handling structure having, at a boundary from a space configured to contain immersion fluid to a region external to the fluid handling structure: a meniscus pinning feature to resist passage of immersion fluid in a radially outward direction from the space; a plurality of gas supply openings in a linear array at least partly surrounding and radially outward of the meniscus pinning feature; and a gas recovery opening radially outward of the plurality of gas supply openings in a linear array.

Abstract: A lithographic apparatus including: a projection system with an optical axis; an enclosure with an ambient gas; and a physical component accommodated in the enclosure, wherein: the lithographic apparatus is configured to cause the physical component to undergo movement relative to the enclosure, in a predetermined direction and in a plane perpendicular to the optical axis; the lithographic apparatus is configured to let the physical component maintain a predetermined orientation with respect to the enclosure during the movement; the movement induces a flow of the ambient gas relative to the component; the physical component has a surface oriented perpendicularly to the optical axis; the component includes a flow direction system configured to direct the flow of ambient gas away from the surface.

Abstract: A method, involving illuminating at least a first periodic structure of a metrology target with a first radiation beam having a first polarization, illuminating at least a second periodic structure of the metrology target with a second radiation beam having a second different polarization, combining radiation diffracted from the first periodic structure with radiation diffracted from the second periodic structure to cause interference, detecting the combined radiation using a detector, and determining a parameter of interest from the detected combined radiation.

Abstract: A method of determining a process window for a lithographic process, the process window describing a degree of acceptable variation in at least one processing parameter during the lithographic process. The method includes obtaining a set of output parameter values derived from measurements performed at a plurality of locations on a substrate, following pattern transfer to the substrate using a lithographic process, and obtaining a corresponding set of actual processing parameter values that includes an actual value of a processing parameter of the lithographic process during the pattern transfer at each of the plurality of locations. The process window is determined from the output parameter values and the actual processing parameter values. This process window may be used to improve the selection of the processing parameter at which a subsequent lithographic process is performed.

Abstract: An apparatus for cleaning an object, the apparatus including: an object support for supporting the object; a low pressure chamber for exposing a first surface of the object to a low pressure when the object is arranged on the object support, an electrode arranged adjacent to and separated from the first surface of the object when the object is arranged on the object support, the electrode being in electrical communication with a surface of the object support which is adjacent the first surface of the object; and a power supply arranged to apply a voltage between the electrode and the object; thereby generating a discharge between the object and the electrode.

Abstract: A defect prediction method for a device manufacturing process involving processing a pattern onto a substrate, the method comprising: identifying a processing window limiting pattern (PWLP) from the pattern; determining a processing parameter under which the PWLP is processed; and determining or predicting, using the processing parameter, existence, probability of existence, a characteristic, or a combination thereof, of a defect produced from the PWLP with the device manufacturing process.

Abstract: A method of operating a lithographic apparatus that comprises: a projection system configured to provide exposure radiation for patterning a substrate underneath the projection system; a first stage configured to support a first substrate; a second stage configured to support a second substrate; and a third stage accommodating a component that includes at least one of a sensor and a cleaning device; wherein the method comprises starting a pre-exposure scrum sweep operation after starting a substrate exchange operation; wherein during the pre-exposure scrum sweep operation, the third stage moves away from underneath the projection system while the second stage moves to underneath the projection system; wherein during the substrate exchange operation, the first substrate is unloaded from the first stage.

Abstract: A lithographic apparatus includes an alignment sensor configured to determine the position of an alignment target having a periodic structure. The alignment sensor includes a demultiplexer to demultiplex a number of intensity channels. The demultiplexer includes a number of stages arranged in series and a number of demultiplexing components, each demultiplexing component operable to divide an input radiation beam into two radiation beam portions. The first stage has a first demultiplexing component that is arranged to receive as an input radiation beam an incident radiation beam. Each successive stage is arranged such that it has twice the number of demultiplexing components as a preceding stage, each demultiplexing component of each stage after the first stage receiving as an input one of the radiation beam portions output from a demultiplexing component of the preceding stage.