Abstract: Method for determining lithographic quality of a structure produced by a lithographic process using a periodic pattern, such as a grating, detects lithographic process window edges and optimum process conditions.

Abstract: A lithographic apparatus comprising a support structure constructed to support a patterning device, the patterning device being capable of imparting an EUV radiation beam with a grating in its cross-section to form a patterned EUV radiation beam, and a projection system configured to project the patterned EUV radiation beam onto a target portion of the substrate, wherein the support structure is provided with a grating comprising a series of first reflective portions which alternates with a series of second reflective portions, the second reflective portions having a reflectivity which is less than the reflectivity of at least part of the first reflective portions and which is greater than zero.

Abstract: A slit shaped area of a patterning device is illuminated to impart a radiation beam with a pattern in its cross-section. A projection system projects the patterned radiation beam onto a target portion of a substrate. As the radiation beam is scanned across the target portion of the substrate, a configuration of the projection system is adjusted and applies a pattern to the target portion. The adjusting may affect a magnitude of an image magnification component of the projection system, along the length of the slit shaped area, or an image distortion in a scan direction. The adjusting is arranged to compensate an effect on pattern overlay accuracy of a distortion of the patterning device.

Abstract: A three-dimensional mask model that provides a more realistic approximation of the three-dimensional effects of a photolithography mask with sub-wavelength features than a thin-mask model. In one embodiment, the three-dimensional mask model includes a set of filtering kernels in the spatial domain that are configured to be convolved with thin-mask transmission functions to produce a near-field image. In another embodiment, the three-dimensional mask model includes a set of correction factors in the frequency domain that are configured to be multiplied by the Fourier transform of thin-mask transmission functions to produce a near-field image.

Abstract: A lithographic apparatus has a support structure configured to support a patterning device, the patterning device serving to pattern a radiation beam according to a desired pattern and having a planar main surface through which the radiation beam passes; an outlet opening configured to direct a flow of a gas onto the patterning device; and an inlet opening configured to extract the gas which has exited the outlet opening, wherein the outlet opening and inlet opening are in a facing surface facing the planar main surface of the patterning device.

Abstract: A lithographic mask has a substrate substantially transmissive for radiation of a certain wavelength, the substrate having a radiation absorbing material in an arrangement, the arrangement configured to apply a pattern to a cross-section of a radiation beam of the certain wavelength, wherein the absorbing material has a thickness which is substantially equal to the certain wavelength divided by a refractive index of the absorbing material.

Abstract: A method is disclosed to form a patterned epitaxy template, on a substrate, to direct self-assembly of block copolymer for device lithography. A resist layer on a substrate is selectively exposed with actinic (e.g. UV or DUV) radiation by photolithography to provide exposed portions in a regular lattice pattern of touching or overlapping shapes arranged to leave unexposed resist portions between the shapes. Exposed or unexposed resist is removed with remaining resist portions providing the basis for a patterned epitaxy template for the orientation of the self-assemblable block copolymer as a hexagonal or square array. The method allows for simple, direct UV lithography to form patterned epitaxy templates with sub-resolution features.

Abstract: A power supply for providing HV power to a lithography illumination source comprising a HV power source arranged to provide the HV power, a HV power transmission line arranged to transmit the HV energy from the HV power source and one or more RF terminations provided on one or more of an input end of the transmission line or an output end of the transmission line. The one or more RF terminations terminate the transmission line to reduce reflection of RF energy at the end of the transmission line.

Abstract: An extreme-ultraviolet (EUV) light source comprising an optic, a target material, and a laser beam passing through said optic along a beam path to irradiate said target material. The EUV light source further includes a system generating a gas flow directed toward said target material along said beam path, said system having a tapering member surrounding a volume and a plurality of gas lines, each gas line outputting a gas stream into said volume.

Abstract: A lithographic apparatus having a plurality of individually controllable radiation source units each providing a portion of a patterned beam of radiation, a control system configured to monitor a parameter of performance of each of the individually controllable radiation source units, and a replacement mechanism configured to replace one of the individually controllable radiation source units with a replacement unit responsive to the control system determining that a criterion has been met based on the monitored parameter of performance.

Abstract: A laser produced plasma extreme ultraviolet laser source comprising at least one variable radius mirror. The at least one variable radius mirror to adjust a beam diameter of a main pulse at a specified distance from a pre-pulse focal plane, where the pre-pulse radiates droplets into target droplets and the main pulse radiates the target droplets into a plasma state to generate the extreme ultraviolet radiation.

Abstract: According to a first aspect of the present invention, there is provided a radiation source comprising: a nozzle configured to direct a stream of fuel droplets (70) along a trajectory towards a plasma formation location; a laser configured to direct laser radiation at a fuel droplet at the plasma formation location to generate, in use, a radiation generating plasma; wherein the laser comprises: a seed laser (50) for providing a seed laser beam (52); a beam splitter (54) for receiving the seed laser beam from the seed laser; an optical amplifier (58) for receiving the seed laser beam from the beam splitter and performing optical amplification; a first reflector (60) located downstream of the optical amplifier, configured to direct the seed laser beam back through the optical amplifier and on to the beam splitter; and a second reflector (70) located further downstream of the beam splitter, configured to receive the seed laser beam from the beam splitter and to direct at least a portion of the seed laser beam bac

Abstract: A lithographic apparatus injects gas between a reticle (MA) and reticle blades (REB-X, REB-Y) to protect the reticle from contamination. The gas may be injected either into the space defined between the reticle and the closest pair of reticle blades, or into the space defined between the two pairs of reticle blades.

Abstract: A lithographic apparatus including a barrier system and a device manufacturing method using such a lithographic apparatus. The barrier system is used to maintain a protected volume of gas within a barrier. The protected volume may be maintained when different components of the lithographic apparatus move relative to each other. The barrier system may be used in different locations within the lithographic apparatus. The geometry of the barrier affects how efficiently the protected volume is maintained, especially at high speeds. The geometry reduces the amount of ambient gas entering the protected volume from outside the barrier.

Abstract: A lithographic apparatus with a cover plate formed separately from a substrate table and means for stabilizing a temperature of the substrate table by controlling the temperature of the cover plate is disclosed. A lithographic apparatus with thermal insulation provided between a cover plate and a substrate table so that the cover plate acts as a thermal shield for the substrate table is disclosed. A lithographic apparatus comprising means to determine a substrate table distortion and improve position control of a substrate by reference to the substrate table distortion is disclosed.

Abstract: A substrate holder for a lithographic apparatus has a planarization layer provided on a surface thereof. The planarization layer provides a smooth surface for the formation of an electronic component such as a thin film electronic component. The planarization layer may be provided in multiple sub layers. The planarization layer may smooth over roughness caused by removal of material from a blank to form burls on the substrate holder.

Abstract: There is disclosed a method of measuring a process parameter for a manufacturing process involving lithography. In a disclosed arrangement the method comprises performing first and second measurements of overlay error in a region on a substrate, and obtaining a measure of the process parameter based on the first and second measurements of overlay error. The first measurement of overlay error is designed to be more sensitive to a perturbation in the process parameter than the second measurement of overlay error by a known amount.

Abstract: A projection system, configured to project a radiation beam onto a target, includes a rotatable frame configured to rotate about an axis defining a tangential direction and a radial direction, wherein the rotatable frame holds a lens configured to focus the radiation beam in only the tangential or radial direction; and a stationary part comprising a substantially stationary lens configured to focus the radiation beam in only the other of the tangential or radial direction.

Abstract: A porous member is used in a liquid removal system of an immersion lithographic projection apparatus to smooth uneven flows. A pressure differential across the porous member may be maintained at below the bubble point of the porous member so that a single-phase liquid flow is obtained. Alternatively, the porous member may be used to reduce unevenness in a two-phase flow.

Abstract: A reticle is loaded into a lithographic apparatus. The apparatus performs measurements on the reticle, so as to calculate alignment parameters for transferring the pattern accurately to substrates. Tests are performed to detect possible contamination of the reticle or its support. Either operation proceeds with a warning, or the patterning of substrates is stopped. The test uses may use parameters of the alignment model itself, or different parameters. The integrity parameters may be compared against reference values reflecting historic measurements, so that sudden changes in a parameter are indicative of contamination. Integrity parameters may be calculated from residuals of the alignment model. In an example, height residuals are used to calculate parameters of residual wedge (Rx?) and residual roll (Ryy?). From these, integrity parameters expressed as height deviations are calculated and compared against thresholds.