Abstract: A multilayer mirror constructed to reflect radiation having a wavelength in the range of 6.4 nm to 7.2 nm. The multilayer mirror has alternating layers, including a first layer and a second layer. The first and second layers are selected from the group consisting of: U, or a compound or nitride thereof, and B4C layers; Th, or a compound or nitride thereof, and B4C layers; La, or a compound or nitride thereof, and B9C layers; La, or a compound or nitride thereof, and B4C layers; U, or a compound or nitride thereof, and B9C layers; Th, or a compound or nitride thereof, and B9C layers; La, or a compound or nitride thereof, and B layers; U, or a compound or nitride thereof, and B layers; C, or a compound or nitride thereof, and B layers; Th, or a compound or nitride thereof, and B layers.

Abstract: A clamping device is constructed and arranged to clamp two parts together. The clamping device includes an aligner constructed and arranged to bring the two parts in an aligned position with respect to each other, a clamp constructed and arranged to maintain the two parts in the aligned position, a disconnect constructed and arranged to guide the two parts away from the aligned position to a disconnected position, and an actuator constructed and arranged to convert an electrical current to kinetic energy. The aligner, the clamp, and the disconnect are constructed and arranged to be driven by the actuator.

Abstract: A lithographic apparatus is provided with an optical encoder measurement system having an irradiation system to direct an irradiation beam to a first scale. The system has optics to direct a primary diffracted beam diffracted from the first scale upon irradiation by the irradiation beam to a second scale and a detector to detect a secondary diffracted beam after interference and a second diffraction of the primary diffracted irradiation beam on the second scale to measure the position of the first scale with respect to the second scale.

Abstract: Treatment of a layer comprising self-assemblable polymer at a surface of a substrate is disclosed. In an embodiment, the treatment includes arranging a zone of temperature change to sweep across the layer, wherein a temperature of the layer within the zone differs from an initial temperature of the layer prior to passage of the zone.

Abstract: A lithographic apparatus having an optical column capable of creating a pattern on a target portion of the substrate. The optical column may be provided with a self-emissive contrast device configured to emit a beam and a projection system configured to project the beam onto the target portion. The apparatus may be provided with an actuator to move the optical column or a part thereof with respect to the substrate. An optical sensor device is provided which is movable in respect of the optical columns and has a range of movement which enables the optical sensor device to move through a projection area of each of the optical columns to measure a beam of each of the optical columns.

Abstract: A lithographic apparatus includes a support configured to support a patterning device, the patterning device configured to pattern a beam of radiation to form a patterned beam of radiation; a positioning device configured to move the support in a first direction; a measurement device configured to measure a relative position of the patterning device with respect to the support and to generate a measuring signal, the measurement device including a reference unit constructed and arranged to be coupled to the patterning device at a fixed relative position, and a position sensor configured to measure the position of the reference unit with respect to the support, wherein the positioning device is constructed and arranged to correct a position of the support based on the measuring signal.

Abstract: A method is described for alignment of a substrate during a double patterning process. A first resist layer containing at least one alignment mark is formed on the substrate. After the first resist layer is developed, a second resist layer is deposited over the first resist layer, leaving a planar top surface (i.e., without topography). By baking the second resist layer appropriately, a symmetric alignment mark is formed in the second resist layer with little or no offset error from the alignment mark in the first resist layer. The symmetry of the alignment mark formed in the second resist can be enhanced by appropriate adjustments of the respective thicknesses of the first and second resist layers, the coating process parameters, and the baking process parameters.

Abstract: A path which a substrate should take under the projection system during immersion lithography imaging of a plurality of dies on the top surface of the substrate is disclosed.

Abstract: Method to calibrate a substrate table position in a lithographic apparatus includes providing a substrate on the substrate table with a two dimensional arrangement of patterns; positioning the substrate table with a positioning system; measuring positions of the substrate table in at least two dimensions with a position measurement system; reading out the arrangement of patterns as a function of the measured positions of the substrate table with a pattern read out system to obtain pattern read out results; deriving position errors as a function of the measured positions of the substrate table compared with the pattern read out results; calibrating the positioning system using the position errors, the calibrating including determining drift influences of the positioning system, correcting the position errors as a function of the corresponding two dimensional position of the substrate table with the determined drift influences, and calibrating the positioning system with the corrected position errors.

Abstract: A method of making an imprint template includes providing a transfer layer on a substrate and providing a layer of imprintable medium on the transfer layer, using a master imprint template to imprint a pattern into the imprintable medium, polymerizing the imprintable medium by exposing it to actinic radiation, then etching the resulting polymer layer, the transfer layer and the substrate such that the imprinted pattern is transferred to the substrate, the substrate thereby becoming an imprint template bearing a pattern which is the inverse of a pattern provided on the master imprint template.

Abstract: A spectral purity filter includes a body of material, through which a plurality of apertures extend. The apertures are arranged to suppress radiation having a first wavelength and to allow at least a portion of radiation having a second wavelength to be transmitted through the apertures. The second wavelength of radiation is shorter than the first wavelength of radiation. The body of material is formed from tungsten-molybdenum alloy or a molybdenum-rhenium alloy or a tungsten-rhenium alloy or a tungsten-molybdenum-rhenium alloy.

Abstract: A temperature sensing probe including a temperature sensor in an elongate housing wherein the elongate housing of the probe is elongate in a first direction and the elongate housing is comprised of a material which has a thermal conductivity of at least 500 W/mK at 20° C. in at least one direction.

Abstract: A lithographic apparatus having an optical column capable of projecting a beam on a target portion on a substrate held by the substrate support. The optical column may have a self-emissive contrast device to emit the beam. The optical column may include a projection system to project the beam onto the target portion. The target portion has a height in a scanning direction of the substrate and a tangential width mainly perpendicular to the scanning direction, wherein a scanning speed of the substrate in the scanning direction divided by the height substantially corresponds with a rotating speed of the optical column or a part thereof divided by the tangential width of the target portion.

Abstract: A method of optimizing a die size in a method of manufacturing devices using a lithographic apparatus, wherein the lithographic apparatus is arranged to expose an image field of variable size in a single exposure step, the image field having a certain maximum size, the method comprising: receiving a desired area for the die; and calculating a target aspect ratio for the die, wherein the target aspect ratio is determined so as to maximize the number of good dies that can be imaged per hour using the lithographic apparatus. Desirably, calculating a target aspect ratio comprises finding a first target aspect ratio that maximizes a figure of merit MF, where MF is the ratio of the number of dies exposed in each image field divided by the number of exposures on each substrate.

Abstract: In one an embodiment, there is provided an assembly comprising at least one detector. Each of the at least one detector includes a substrate having a doped region of a first conduction type, a layer of dopant material of a second conduction type located on the substrate, a diffusion layer formed within the substrate and in contact with the layer of dopant material and the doped region of the substrate, wherein a doping profile, which is representative of a doping material concentration of the diffusion layer, increases from the doped region of the substrate to the layer of dopant material, a first electrode connected to the layer of dopant material, and a second electrode connected to the substrate. The diffusion layer is arranged to form a radiation sensitive surface.

Abstract: A chuck apparatus for holding a substrate is the disclosed. The chuck apparatus includes a first surface portion on which the substrate is to be held and a second surface portion adjacent to the first surface portion and extending at least partially around an edge of the first surface portion and which, in use, is arranged to deflect gas over the first surface portion and thus the substrate that is to be held on the first surface portion.

Abstract: A lithographic apparatus includes a substrate table constructed to hold a substrate, and a projection system configured to project a patterned radiation beam onto a target portion of the substrate. A surface of a component of the lithographic apparatus that is in a vacuum environment in use is provided with a repeating structure configured to increase the effective thermal accommodation coefficient of the surface.

Abstract: The present invention provides a number of innovations in the area of computational process control (CPC). CPC offers unique diagnostic capability during chip manufacturing cycle by analyzing temporal drift of a lithography apparatus/ process, and provides a solution towards achieving performance stability of the lithography apparatus/process. Embodiments of the present invention enable optimized process windows and higher yields by keeping performance of a lithography apparatus and/or parameters of a lithography process substantially close to a pre-defined baseline condition. This is done by comparing the measured temporal drift to a baseline performance using a lithography process simulation model. Once in manufacturing, CPC optimizes a scanner for specific patterns or reticles by leveraging wafer metrology techniques and feedback loop, and monitors and controls, among other things, overlay and/or CD uniformity (CDU) performance over time to continuously maintain the system close to the baseline condition.

Abstract: A lithographic system includes a monitored lithographic projection apparatus arranged to project a patterned beam onto a substrate. A scatterometer measures a plurality of parameters of the pattern transferred to the substrate including at least one CD-profile parameter and at least one further parameter of the pattern transferred to the substrate which is indicative of a machine setting of the monitored lithographic projection apparatus. A matching system includes a database storing information representative of reference CD values and reference values for the further feature. A comparison arrangement compares the measured values with the corresponding stored values, a lithographic parameter calculation means calculating a corrected set of machine settings for the monitored lithographic apparatus dependent on the differences between the measured and reference values.

Abstract: A method for controlling a multi-stage system includes a stator extending parallel to a first direction; a first and second stage that are moveable relative to the stator; the stages being provided with a magnet system to generate a magnetic field, and the stator being provided with coils to interact with the magnetic fields to position the stages relative to the stator, the method including: determining the position of the stages; selecting a first and a second subset of coils that are capable of having a non-negligible interaction with the magnetic field of respectively the first and the second stage; activating the coils of both subsets, wherein activating the coils includes determining the coils that are part of both subsets; and excluding a coil that is part of both subsets from activating.