Abstract: A lithographic apparatus having an optical column capable of projecting a beam on a target portion on a substrate held by the substrate support. The optical column may have a self-emissive contrast device to emit the beam. The optical column may include a projection system to project the beam onto the target portion. The target portion has a height in a scanning direction of the substrate and a tangential width mainly perpendicular to the scanning direction, wherein a scanning speed of the substrate in the scanning direction divided by the height substantially corresponds with a rotating speed of the optical column or a part thereof divided by the tangential width of the target portion.

Abstract: A chuck apparatus for holding a substrate is the disclosed. The chuck apparatus includes a first surface portion on which the substrate is to be held and a second surface portion adjacent to the first surface portion and extending at least partially around an edge of the first surface portion and which, in use, is arranged to deflect gas over the first surface portion and thus the substrate that is to be held on the first surface portion.

Abstract: In one an embodiment, there is provided an assembly comprising at least one detector. Each of the at least one detector includes a substrate having a doped region of a first conduction type, a layer of dopant material of a second conduction type located on the substrate, a diffusion layer formed within the substrate and in contact with the layer of dopant material and the doped region of the substrate, wherein a doping profile, which is representative of a doping material concentration of the diffusion layer, increases from the doped region of the substrate to the layer of dopant material, a first electrode connected to the layer of dopant material, and a second electrode connected to the substrate. The diffusion layer is arranged to form a radiation sensitive surface.

Abstract: A lithographic system includes a monitored lithographic projection apparatus arranged to project a patterned beam onto a substrate. A scatterometer measures a plurality of parameters of the pattern transferred to the substrate including at least one CD-profile parameter and at least one further parameter of the pattern transferred to the substrate which is indicative of a machine setting of the monitored lithographic projection apparatus. A matching system includes a database storing information representative of reference CD values and reference values for the further feature. A comparison arrangement compares the measured values with the corresponding stored values, a lithographic parameter calculation means calculating a corrected set of machine settings for the monitored lithographic apparatus dependent on the differences between the measured and reference values.

Abstract: A method for controlling a multi-stage system includes a stator extending parallel to a first direction; a first and second stage that are moveable relative to the stator; the stages being provided with a magnet system to generate a magnetic field, and the stator being provided with coils to interact with the magnetic fields to position the stages relative to the stator, the method including: determining the position of the stages; selecting a first and a second subset of coils that are capable of having a non-negligible interaction with the magnetic field of respectively the first and the second stage; activating the coils of both subsets, wherein activating the coils includes determining the coils that are part of both subsets; and excluding a coil that is part of both subsets from activating.

Abstract: A lithographic apparatus includes a substrate table constructed to hold a substrate, and a projection system configured to project a patterned radiation beam onto a target portion of the substrate. A surface of a component of the lithographic apparatus that is in a vacuum environment in use is provided with a repeating structure configured to increase the effective thermal accommodation coefficient of the surface.

Abstract: A lithographic apparatus includes an illumination system configured to condition a radiation beam and a support constructed to support a patterning device, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam. The lithographic apparatus further includes a substrate table constructed to hold a substrate; a positioner constructed to position the substrate table; a projection system configured to project the patterned radiation beam onto a target portion of the substrate; a substrate surface actuator arranged to engage a part of a surface of the substrate facing the projection system, and a position controller configured to control a position of the substrate table, the position controller being arranged to drive the positioner and the substrate surface actuator.

Abstract: The present invention provides a number of innovations in the area of computational process control (CPC). CPC offers unique diagnostic capability during chip manufacturing cycle by analyzing temporal drift of a lithography apparatus/ process, and provides a solution towards achieving performance stability of the lithography apparatus/process. Embodiments of the present invention enable optimized process windows and higher yields by keeping performance of a lithography apparatus and/or parameters of a lithography process substantially close to a pre-defined baseline condition. This is done by comparing the measured temporal drift to a baseline performance using a lithography process simulation model. Once in manufacturing, CPC optimizes a scanner for specific patterns or reticles by leveraging wafer metrology techniques and feedback loop, and monitors and controls, among other things, overlay and/or CD uniformity (CDU) performance over time to continuously maintain the system close to the baseline condition.

Abstract: A measurement system includes a sensor arranged to co-operate with a first pattern arranged on a structure of the measurement system to determine a first position quantity of the sensor relative to the structure, and arranged to co-operate with a second pattern arranged on the structure to determine a second position quantity of the sensor relative to the structure, wherein the first and second patterns are arranged on different surfaces of the structure.

Abstract: An optical element includes a top layer which is transmissive for EUV radiation with wavelength ? in the range of 5-20 nm, and a structure of the top layer is a structure having an rms roughness value equal to or larger than ?/10 for spatial periods equal to or smaller than ?/2. The structure promotes transmission through the top layer to the optical element.

Abstract: Fluid temperature control and sensor calibration is disclosed. In an embodiment, a fluid temperature control unit includes a heater configured to heat a first fluid in a first fluid path, a first temperature sensor configured to measure a temperature of the first fluid in the first fluid path, a second temperature sensor configured to measure a temperature of a second fluid in a second fluid path, and a controller configured to control the heater on the basis of the temperature sensed by the first sensor and the temperature sensed by the second sensor.

Abstract: The invention relates to a marker structure for optical alignment of a substrate and provided thereon. The marker structure has a first reflecting surface at a first level and a second reflecting surface at a second level. A separation between the first level and the second level determines a phase depth condition. The marker structure further has an additional structure. The additional structure is arranged to modify the separation during manufacture of the marker structure. The invention further relates to a method of forming such a marker structure.

Abstract: A method for identifying process window signature patterns in a device area of a mask is disclosed. The signature patterns collectively provide a unique response to changes in a set of process condition parameters to the lithography process. The signature patterns enable monitoring of associated process condition parameters for signs of process drift, analyzing of the process condition parameters to determine which are limiting and affecting the chip yields, analyzing the changes in the process condition parameters to determine the corrections that should be fed back into the lithography process or forwarded to an etch process, identifying specific masks that do not transfer the intended pattern to wafers as intended, and identifying groups of masks that share common characteristics and behave in a similar manner with respect to changes in process condition parameters when transferring the pattern to the wafer.

Abstract: A radiation source is configured to generate extreme ultraviolet radiation. The radiation source includes a laser constructed and arranged to generate a beam of radiation directed to a plasma generation site where a plasma is generated when the beam of radiation interacts with a fuel, an optical component having a surface that is arranged and positioned to be hit by a droplet of fuel, and a temperature conditioner constructed and arranged to elevate the temperature of the surface.

Abstract: In immersion lithography after exposure of a substrate is complete, a detector is used to detect any residual liquid remaining on the substrate and/or substrate table.

Abstract: A method of determining a position of a substrate relative to an imprint template is described, wherein the imprint template has at least three gratings and the substrate has at least three gratings positioned such that each imprint template grating forms a composite grating with an associated substrate grating, the at least three imprint template gratings and associated substrate gratings having offsets relative to one another. The method includes detecting an intensity of radiation which is reflected by the three composite gratings, and using the detected intensities to determine displacement of the substrate or imprint template from a position.

Abstract: A method for cleaning elements of a lithographic apparatus, for example optical elements such as a collector mirror, includes providing a gas containing nitrogen; generating nitrogen radicals from at least part of the gas, thereby forming a radical containing gas; and providing at least part of the radical containing gas to the one or more elements of the apparatus. A lithographic apparatus includes a source and an optical element, and an electrical discharge generator arranged to generate a radio frequency discharge.

Abstract: A method of making an imprint lithography template includes applying a curable material to a patterned surface of a master imprint template, allowing the curable material to cure and thereby forming a second imprint template having a patterned surface which is the inverse of the patterned surface of the master imprint template; removing the second imprint template from the master imprint template; applying inorganic sol-gel to a substrate; imprinting the inorganic sol-gel with the second imprint template; allowing the inorganic sol-gel to cure; and removing the second imprint template from the cured inorganic sol-gel, such that the inorganic sol-gel forms a third imprint template having a patterned surface which corresponds with the patterned surface of the master imprint template.

Abstract: A radiation source generates extreme ultraviolet radiation for a lithographic apparatus as a chamber that is provided with a low pressure hydrogen environment. A trace amount of a protective compound, e.g., H2O, H2O2, O2, NH3 or NOx, is provided to the chamber to assist in maintaining a protective oxide film on metal, e.g., titanium, components in the chamber.

Abstract: In an embodiment, a lithographic apparatus includes an illumination system configured to condition a radiation beam; a support constructed to support a patterning device, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam; a substrate table constructed to hold a substrate; a projection system configured to project the patterned radiation beam onto a target portion of the substrate, and a passive noise damper configured to dampen gas borne noise caused by movement of a movable part of the lithographic apparatus.