Abstract: A lithographic apparatus including an exposure unit that exposes parallel lines on a target area of a substrate by projecting two beams of radiation onto the substrate. The two beams of radiation are projected such that they interfere with each other to form the parallel lines. An actuator continuously moves the substrate relative to the exposure unit, while the exposure unit exposes the parallel lines on the target areas on the substrate.

Abstract: A detection method for detecting a property of an extended pattern formed by at least one line generally extending in a first direction. The extended pattern is formed on a substrate or on a substrate table and preferably extends over a length of at least 50× the width of the line. The extended pattern is focus sensitive. The detection method includes moving the substrate table in a first direction and measuring along that first direction a property of the extended pattern. The property can be a result of a physical property of the extended pattern in a second direction perpendicular to the first direction. In a next step a calibration of the substrate table position can be derived from the measured position of the extended pattern.

Abstract: A radiation source may include a radiation emitter for emitting radiation, a collector for collecting radiation emitted by the radiation emitter, and an outlet configured, in use, to introduce a cooled gas into the radiation source.

Abstract: The invention provides a lithographic apparatus including an illumination system configured to condition a radiation beam, a patterning device support constructed to support a transmissive patterning device, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam, a substrate table constructed to hold a substrate, and a projection system configured to project the patterned radiation beam onto a target portion of the substrate, wherein the patterning device support is configured to hold a patterning device and wherein the lithographic apparatus includes a clamping device, the clamping device being configured to clamp the patterning device at the top side.

Abstract: A lithographic system includes a monitored lithographic projection apparatus arranged to project a patterned beam onto a substrate. A scatterometer measures a plurality of parameters of the pattern transferred to the substrate including at least one CD-profile parameter and at least one further parameter of the pattern transferred to the substrate which is indicative of a machine setting of the monitored lithographic projection apparatus. A matching system includes a database storing information representative of reference CD values and reference values for the further feature. A comparison arrangement compares the measured values with the corresponding stored values, a lithographic parameter calculation means calculating a corrected set of machine settings for the monitored lithographic apparatus dependent on the differences between the measured and reference values.

Abstract: A method of producing a marker on a substrate includes projecting a patterned beam on a layer of resist disposed on a substrate in a lithographic apparatus to create a latent marker; and locally heating the substrate at the marker location in the lithographic apparatus to transform the latent marker into a detectable marker.

Abstract: A lithographic apparatus arranged to transfer a pattern from a patterning device onto a substrate includes a reference set of gratings provided in the substrate, the reference set including two reference gratings having line elements in a first direction and one reference grating having line elements in a second, perpendicular, direction. A measurement set of gratings is provided on top of the reference set of gratings, the measurement set comprising three measurement gratings similar to the reference gratings. Two of the measurement gratings are oppositely biased in the second direction relative to the respective reference gratings. An overlay measurement device is provided to measure asymmetry of the three gratings in the reference set and the measurement set, and to derive from the measured asymmetry the overlay in both the first and second direction.

Abstract: A lithographic apparatus is disclosed that includes an imprint template holder configured to hold an imprint template, and a dispensing mechanism of polar molecules, wherein the dispensing mechanism of polar molecules is configured to provide polar molecules into a local environment in the vicinity of the imprint template, such that the concentration of polar molecules in the local environment in the vicinity of the imprint template is greater than the concentration of polar molecules in other parts of the lithographic apparatus.

Abstract: An imprint lithography alignment apparatus is disclosed that includes at least two detectors which are configured to detect an imprint template alignment mark, wherein the alignment apparatus further comprises alignment radiation adjustment optics which are configured to provide adjustment of locations from which the at least two alignment detectors receive alignment radiation.

Abstract: A lithographic apparatus comprising an illumination system for providing a beam of radiation, a support structure for supporting a patterning device, the patterning device serving to impart the radiation beam with a pattern in its cross-section, a substrate table for holding a substrate, and a projection system for projecting the patterned radiation beam onto a target portion of the substrate, wherein the projection system includes a moveable lens connected to an actuator which is configured to move the moveable lens during projection of the patterned radiation beam onto the target portion of the substrate.

Abstract: An iterative method of producing optimized setpoint data for controlling the actuation of elements of an array of individually controllable elements in a maskless system and systems therefore. The optimization is based on estimation of a device structure that can utilizes one or more of the following factors: the low-pass characteristics of the projection system, the configuration of the illumination system, and the process window properties.

Abstract: An immersion lithographic apparatus is described in which a droplet removal device removes droplets from the substrate, e.g. during exposures, using an angled flow of gas from a gas knife.

Abstract: A liquid supply system for an immersion lithographic apparatus provides a laminar flow of immersion liquid between a final element of the projection system and a substrate. A control system minimizes the chances of overflowing and an extractor includes an array of outlets configured to minimize vibrations.

Abstract: In optical maskless lithography, scanning of a single substrate is typically much slower than in conventional lithography. Solutions are described for the adoption of immersion lithography techniques into optical maskless lithography and in particular provides one or more solutions to reduce the amount of time which the immersion liquid is in contact with any given part of the top surface of the substrate during imaging.

Abstract: A guide for guiding cables and/or hoses between two parts that are moveable relative to each other, the guide including a band having a length, width and thickness, and having a torsional stiffness about a longitudinal axis of the band, a bending stiffness about an axis in the width direction, and a shear stiffness in the thickness direction, multiple blocks fitted to the band, and a deformable member provided between two adjacent blocks, the deformable member being connected to the adjacent blocks and having a torsional stiffness about the longitudinal axis of the band, a shear stiffness in the thickness direction, and a bending stiffness about the axis in the width direction, wherein the torsional stiffness of the deformable member is substantially greater than the torsional stiffness of the band, and wherein the shear stiffness of the deformable member is substantially greater than the shear stiffness of the band.

Abstract: Estimating model parameters of a lithographic apparatus and controlling lithographic processing by a lithographic apparatus includes performing an exposure using a lithographic apparatus projecting a pattern onto a wafer. A set of predetermined wafer measurement locations is measured. Predetermined and measured locations of the marks are used to generate radial basis functions. Model parameters of said substrate are calculated using the generated radial basis functions as a basis function across said substrate. Finally, the estimated model parameters are used to control the lithographic apparatus in order to expose the substrate.

Abstract: An immersion lithographic apparatus is disclosed having a projection system configured to direct a patterned beam of radiation onto a substrate and a liquid handling system configured to supply and confine immersion liquid to a space defined between the projection system and a substrate, or a substrate table, or both. A controller is provided to adjust an angle of a lower surface of the liquid handling system relative to the top surface of the substrate during motion of the substrate and/or substrate table relative to the liquid handling system dependent upon a position of the substrate and/or substrate table relative to the liquid handling system and/or a direction of relative movement between the substrate and/or substrate table and the liquid handling system.

Abstract: A gas manifold to direct a gas flow between two parallel plates of an optical component of a lithographic apparatus, the gas manifold having an inlet to provide a gas flow to the gas manifold, a lattice comprising a plurality of through holes to homogenize the gas flow, a contractor downstream of the lattice to reduce the cross sectional area through which the gas flow flows, and an outlet downstream of the contractor to provide the gas flow to the two parallel plates.

Abstract: A device manufacturing method, is presented herein. In one embodiment, the device manufacturing method includes a mask for use with DUV having a quartz substrate and chrome absorber. The chrome absorber has a thickness of about 700 nm which causes increased TE polarization in the transmitted light and improves contrast at the substrate level.

Abstract: A lithographic manufacturing process is disclosed in which first information of a lithographic transfer function of a first lithographic projection apparatus is obtained. The information is compared with second information of a reference lithographic transfer function (e.g. of a second lithographic projection apparatus). The difference between the first and second information is calculated. Then, the change of machine settings for the first lithographic projection apparatus, needed to minimize the difference, is calculated and applied to the first lithographic projection apparatus. In an exemplary application, a match between the first and second lithographic projection apparatus of any pitch-dependency of feature errors is improved.