Abstract: A method of measuring a property of a substrate includes generating a patterned mask configured to cause a radiation beam passing through the mask to acquire the pattern, simulating radiating the substrate with a patterned radiation beam that has been patterned using the mask to obtain a simulated pattern, determining at least one location of the simulated pattern that is prone to patterning errors, and irradiating the substrate with the patterned radiation beam using a lithographic process. The method also includes measuring an accuracy of at least one property of the at least one location of the pattern on the substrate that has been determined as being prone to patterning errors, and adjusting the lithographic process according to the measuring.

Abstract: A controller is provided that controls an actuator system having a plurality of actuators arranged to act on an object. The controller uses a gain balancing matrix to convert a first control signal, representing a set of forces desired to be provided to the centre of gravity of the object into a second control signal, representing an equivalent set of forces to be provided by the plurality of actuators. The system is further configured such that a first gain balancing matrix is used at a first frequency band and a second gain balancing matrix is used at a second frequency band.

Abstract: A positioning system for controlling a relative position between a first component and a second component of a lithographic apparatus, wherein a position of each component is defined by a set of orthogonal coordinates, the positioning system including: a measuring device configured to determine an error in the momentary position of one of the components with respect to a setpoint position in a measurement coordinate; and a controller configured to control movement of the other component in a control coordinate based on the determined error; wherein the measurement coordinate is different from the control coordinate.

Abstract: An immersion lithographic apparatus has adaptations to prevent or reduce bubble formation in one or more gaps in the substrate table by preventing bubbles escaping from the gap into the beam path and/or extracting bubbles that may form in the gap.

Abstract: A method for alignment of a substrate, in which the substrate includes a mark in a scribe lane, and the scribe lane extends along a longitudinal direction as a first direction. The mark has a periodic structure in the first direction. The method includes providing an illumination beam for scanning the mark in a direction perpendicular to a direction of the mark's periodic structure along a first scan path across the mark, scanning the spot of the illumination beam along a second scan path across the mark, the second scan path being parallel to the first scan path, wherein the second scan path is shifted relative to the first scan path over a first shift that corresponds to a fraction of the repeating distance of the periodic structure.

Abstract: A substrate for use in a lithographic projection apparatus. The substrate includes a sealing coating that covers at least a part of a first interface between two layers on the substrate, or between a layer and the substrate, and does not extend to a central portion of the substrate.

Abstract: A lithographic apparatus includes an illumination system, a support, a substrate table, a projection system, and an actuator. The illumination system is configured to condition a radiation beam. The support is constructed to support a patterning device. The patterning device is capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam. The substrate table is constructed to hold a substrate. The projection system is configured to project the patterned radiation beam onto a target portion of the substrate. The actuator is constructed and arranged to exert a force on a part of the lithographic apparatus via an elongated structure. The elongated structure is provided with a vibration damper constructed and arranged to damp vibrations in the elongated structure.

Abstract: A method of splitting a lithographic pattern into two sub-patterns, includes generating test structures corresponding to structures of interest in the lithographic pattern, varying the test structures through a selected range of dimensions, simulating an image of the test structures, determining an image quality metric for the simulated image, analyzing the determined image quality metric to determine pitch ranges for which split improves the image quality metric and ranges for which split does not improve the image quality metric, and generating the two sub-patterns in accordance with the determined pitch ranges.

Abstract: A method that includes conditioning a radiation beam, imparting the radiation beam with a pattern to form a patterned radiation beam by a reticle having a pattern image area and a reticle mark, and projecting the patterned radiation beam onto a target portion of a substrate by a projection system. The method further includes illuminating the reticle mark by the radiation beam for generating an aerial image of the reticle, projecting the aerial image on an image sensor, collecting image data from the image sensor, obtaining from the image data positional parameters of the aerial image, and correcting any deviation of the positional parameters from a required position of the aerial image by compensating an illumination induced thermal expansion of the reticle by an estimated correction of magnification settings of the projection system, the estimated correction being calculated from a prediction of the temporal thermal expansion of the reticle.

Abstract: A fluid handling structure for a lithographic apparatus, the fluid handling structure having, at a boundary from a space configured to contain immersion fluid to a region external to the fluid handling structure: a meniscus pinning feature to resist passage of immersion fluid in a radially outward direction from the space; a gas supply opening radially outward of the meniscus pinning feature; and a gas recovery opening radially outward of the meniscus pinning feature and at least partly surrounding the gas supply opening.

Abstract: Described herein are methods for matching the characteristics of a lithographic projection apparatus to a reference lithographic projection apparatus, where the matching includes optimizing illumination source and projection optics characteristics. The projection optics can be used to shape wavefront in the lithographic projection apparatus. According to the embodiments herein, the methods can be accelerated by using linear fitting algorithm or using Taylor series expansion using partial derivatives of transmission cross coefficients (TCCs).

Abstract: Diffraction models and scatterometry are used to reconstruct a model of a microscopic structure on a substrate. A plurality of candidate structures are defined, each represented by a plurality of parameters (p1, p2, etc.)). A plurality of model diffraction signals are calculated by simulating illumination of each of the candidate structures. The structure is reconstructed by fitting one or more of the model diffraction signals to a signal detected from the structure. In the generation of the candidate structures, a model recipe is used in which parameters are designated as either fixed or variable. Among the variable parameters, certain parameters are constrained to vary together in accordance with certain constraints, such as linear constraints. An optimized set of constraints, and therefore an optimized model recipe, is determined by reference to a user input designating one or more parameters of interest for a measurement, and by simulating the reconstruction process reconstruction.

Abstract: Liquid is supplied to a space between the projection system of a lithographic apparatus and a substrate. A flow of gas towards a vacuum inlet prevents the humid gas from escaping to other parts of the lithographic apparatus. This may help to protect intricate parts of the lithographic apparatus from being damaged by the presence of humid gas.

Abstract: Methods are disclosed for measuring target structures formed by a lithographic process on a substrate. A grating structure within the target is smaller than an illumination spot and field of view of a measurement optical system. The optical system has a first branch leading to a pupil plane imaging sensor and a second branch leading to a substrate plane imaging sensor. A spatial light modulator is arranged in an intermediate pupil plane of the second branch of the optical system. The SLM imparts a programmable pattern of attenuation that may be used to correct for asymmetries between the first and second modes of illumination or imaging. By use of specific target designs and machine-learning processes, the attenuation patterns may also be programmed to act as filter functions, enhancing sensitivity to specific parameters of interest, such as focus.

Abstract: A method of increasing a depth of focus of a lithographic apparatus is disclosed. The method includes forming diffracted beams of radiation using a patterning device pattern; and transforming a phase-wavefront of a portion of the diffracted beams into a first phase-wavefront having a first focal plane for the lithographic apparatus, and a second phase-wavefront having a second, different focal plane, wherein the transforming comprises: subjecting a phase of a first portion of a first diffracted beam and a phase of a corresponding first portion of a second diffracted beam to a phase change which results in an at least partial formation of the first phase-wavefront, and subjecting a phase of a second portion of the first diffracted beam and a phase of a corresponding second portion of the second diffracted beam to a phase change which results in an at least partial formation of the second phase-wavefront.

Abstract: Embodiments of the present invention provide methods for optimizing a lithographic projection apparatus including optimizing projection optics therein, and preferably including optimizing a source, a mask, and the projection optics. The projection optics is sometimes broadly referred to as “lens”, and therefore the joint optimization process may be termed source mask lens optimization (SMLO). SMLO is desirable over existing source mask optimization process (SMO), partially because including the projection optics in the optimization can lead to a larger process window by introducing a plurality of adjustable characteristics of the projection optics. The projection optics can be used to shape wavefront in the lithographic projection apparatus, enabling aberration control of the overall imaging process.

Abstract: A lithographic apparatus is described having a liquid supply system configured to at least partly fill a space between a projection system of the lithographic apparatus and a substrate with liquid, a barrier member arranged to substantially contain the liquid within the space, and one or more elements to control and/or compensate for evaporation of liquid from the substrate.

Abstract: Described herein are methods for matching the characteristics of a lithographic projection apparatus to a reference lithographic projection apparatus, where the matching includes optimizing projection optics characteristics. The projection optics can be used to shape wavefront in the lithographic projection apparatus. According to the embodiments herein, the methods can be accelerated by using linear fitting algorithm or using Taylor series expansion using partial derivatives of transmission cross coefficients (TCCs).

Abstract: Embodiments of the present invention provide methods for optimizing a lithographic projection apparatus including optimizing projection optics therein. The current embodiments include several flows including optimizing a source, a mask, and the projection optics and various sequential and iterative optimization steps combining any of the projection optics, mask and source. The projection optics is sometimes broadly referred to as “lens”, and therefore the optimization process may be termed source mask lens optimization (SMLO). SMLO may be desirable over existing source mask optimization process (SMO) or other optimization processes that do not include projection optics optimization, partially because including the projection optics in the optimization may lead to a larger process window by introducing a plurality of adjustable characteristics of the projection optics.

Abstract: A control system controls a support structure of a lithographic apparatus. A first measurement system measures the position of a substrate supported by the support structure, in a first coordinate system. A second measurement system measures the position of the support structure in a second coordinate system, the first measurement system having a presumed position in the second coordinate system. A controller controls the position of the support structure based on measurements by the second measurement system, to convert the measured position of the substrate into a converted position of the support structure in the second coordinate system, to position the support structure based on the converted position, to receive a position error signal indicative of a difference between the presumed position and an actual position of the first measurement system in the second coordinate system, and to position the support structure dependent upon the position error signal.