Abstract: An alignment mark determines alignment of a first and a second exposure on a substrate on a macro level and a micro level. The alignment mark includes a first alignment pattern projected during the first exposure and a second alignment pattern projected during the second exposure. The alignment mark includes a first sub-mark at least partially defined by the first alignment pattern and a second sub-mark at least partially defined by the second alignment pattern. Relative positions of the first and second sub-marks on the substrate are representative for alignment of the first and second exposures on the macro level. At least one sub-mark is defined by image lines of the first alignment pattern and the second alignment pattern, and wherein relative positions of image lines of the first alignment pattern and image lines of the second alignment pattern of the at least one sub-mark are representative for alignment of the first and second exposures on the micro level.

Abstract: A radiation system includes a contamination barrier configured to permit radiation from a radiation source to pass through and to capture debris coming from the radiation source. The contamination barrier includes a plurality of lamellas. The surface of the lamellas includes a material. The radiation system also includes a collector configured to collect radiation from the contamination barrier. An optical surface of the collector includes a material that is the same as the material of the surface of the lamellas.

Abstract: A method for alignment of a substrate, in which the substrate includes a mark in a scribe lane, and the scribe lane extends along a longitudinal direction as a first direction. The mark has a periodic structure in the first direction. The method includes providing an illumination beam for scanning the mark in a direction perpendicular to a direction of the mark's periodic structure along a first scan path across the mark, scanning the spot of the illumination beam along a second scan path across the mark, the second scan path being parallel to the first scan path, wherein the second scan path is shifted relative to the first scan path over a first shift that corresponds to a fraction of the repeating distance of the periodic structure.

Abstract: A method of obtaining information related to a defect present in the irradiation of a substrate coated with a layer of radiation sensitive material using immersion lithography is disclosed. The method includes irradiating an area of the radiation sensitive material with a non-patterned radiation beam, the area being irradiated with a dose which is sufficient for the radiation sensitive material to be substantially removed during subsequent development of the radiation sensitive material if the radiation sensitive material is a positive radiation sensitive material, or with a dose which is sufficient for the radiation sensitive material to be substantially insoluble during subsequent development of the radiation sensitive material if the radiation sensitive material is a negative radiation sensitive material.

Abstract: An imprinting method is disclosed that, in embodiment, includes contacting first and second spaced target regions of an imprintable medium on a substrate with first and second templates respectively to form respective first and second imprints in the medium and separating the first and second templates from the imprinted medium.

Abstract: A lithographic apparatus includes an illumination system configured to condition a radiation beam and a support constructed to support a patterning device. The patterning device is configured to impart the radiation beam with a pattern in its cross-section to form a patterned radiation beam. A substrate table is constructed to hold a substrate, and a projection system is configured to project the patterned radiation beam onto a target portion of the substrate. The projection system includes a vacuum chamber and a controller configured to control an actuator of an optical device arranged in the vacuum chamber. The vacuum chamber includes a hermetically sealed housing in which the controller is accommodated. The housing is provided with an electrical connection configured to electrically connect the controller to the optical device, and is connected to an exterior wall of the vacuum chamber via a fluid cooling channel configured to cool the controller.

Abstract: A method for determining an offset between a center of a substrate and a center of a depression in a chuck includes providing a test substrate to the depression, the test substrate having a dimension smaller than a dimension of the depression, measuring a position of an alignment mark of the test substrate while in the depression, and determining the offset between the center of the substrate and the center of the depression from the position of the alignment mark.

Abstract: In an immersion lithography apparatus, the immersion liquid is supplied from a tank via a flow restrictor. The liquid held in the tank is maintained at a substantially constant height above the flow restrictor to ensure a constant flow of liquid.

Abstract: A measurement system configured to measure a position dependent signal of an object table, the measurement system including at least one sensor mountable on the object table and a sensor target object mountable on a substantially stationary frame, and a mounting device configured to mount the sensor target object on the substantially stationary frame, wherein the measurement system further includes a compensator configured to compensate movements and/or deformations of the sensor target object with respect to the substantially stationary frame. The compensator may include a passive or an active damper and/or a feedback position controller. In an alternative embodiment, the compensator includes a gripping device which fixes the position of the sensor target object during a high accuracy movement of the movable object.

Abstract: A lithographic apparatus having a first outlet to provide a thermally conditioned fluid with a first flow characteristic to at least part of a sensor beam path, and a second outlet associated with the first outlet and to provide a thermally conditioned fluid with a second flow characteristic, different to the first flow characteristic, adjacent the thermally conditioned fluid from the first outlet.

Abstract: A radiation detector detects radiation. The radiation detector includes a plurality of Faraday cups. Each Faraday cup being provided with a cover. Each cover comprising a window arrangement through which the radiation may pass into the Faraday cup. The window arrangement of each cover being different for each Faraday cup. Each Faraday cup housing a target configured to emit photoelectrons if the radiation is incident upon the target.

Abstract: To detect whether a substrate is in a focal plane of an inspection apparatus, an optical focus sensor is arranged to receive a radiation beam via an objective lens. The optical focus sensor includes a splitter configured to split the radiation beam into a first sub-beam and a second sub-beam. With an aperture and a detector in the light path of each of the sub-beams it is possible to detect whether the substrate is in focus by comparing the amount of radiation received by each of the detectors.

Abstract: A lithographic apparatus includes, in an embodiment, an illumination system configured to condition a radiation beam; a support constructed to support a patterning device, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam; a substrate table constructed to hold a substrate; a projection system configured to project the patterned radiation beam onto a target portion of the substrate; and a flexible transportation line extending between a first and second part of the apparatus, the second part moveable with respect to the first part, wherein the line is pre-formed in a three-dimensional curve.

Abstract: An immersion lithography apparatus comprises a temperature controller configured to adjust a temperature of a projection system, a substrate and a liquid towards a common target temperature. Controlling the temperature of these elements and reducing temperature gradients may improve imaging consistency and general lithographic performance. Measures to control the temperature may include controlling the immersion liquid flow rate and liquid temperature, for example, via a feedback circuit.

Abstract: A method of projecting a patterned beam onto a substrate using an EUV lithographic apparatus having a projection system including a plurality of mirrors. The method includes the following steps. Using the projection system to project the patterned beam onto the substrate while moving a final mirror of the projection system in a direction substantially perpendicular to the surface of the substrate. Rotating the final mirror to substantially compensate for unwanted translation of the projected patterned radiation beam on the substrate due to the movement of the mirror.

Abstract: A system is configured to measure two separately polarized beams upon diffraction from a substrate in order to determine properties of a grating on a substrate. Linearly polarized light sources are passed via a fixed phase retarder in order to change the phase of one of two orthogonally polarized radiation beams with respect to the other of the two beams. The relative phases of the two radiation beams and other features of the beams as measured in a detector gives rise to properties of the substrate surface. The grating and the initial linear polarization of the radiation beam are angled non-orthogonally relative to each other.

Abstract: A pattern from a patterning device is applied to a substrate. The applied pattern includes device functional areas and metrology target areas. Each metrology target area comprises a plurality of individual grating portions, which are used for diffraction based overlay measurements or other diffraction based measurements. The gratings are of the small target type, which is small than an illumination spot used in the metrology. Each grating has an aspect ratio substantially greater than 1, meaning that a length in a direction perpendicular to the grating lines which is substantially greater than a width of the grating. Total target area can be reduced without loss of performance in the diffraction based metrology. A composite target can comprise a plurality of individual grating portions of different overlay biases. Using integer aspect ratios such as 2:1 or 4:1, grating portions of different directions can be packed efficiently into rectangular composite target areas.

Abstract: A method is used to determine focus of a lithographic apparatus used in a lithographic process on a substrate. The lithographic process is used to form at least two periodic structures on the substrate. Each structure has at least one feature that has an asymmetry between opposing side wall angles that varies as a different function of the focus of the lithographic apparatus on the substrate. A spectrum produced by directing a beam of radiation onto the at least two periodic structures is measured and ratios of the asymmetries are determined. The ratios and a relationship between the focus and the side wall asymmetry for each structure is used to determine the focus of the lithographic apparatus on the substrate.

Abstract: An immersion lithography apparatus is disclosed in which liquid is supplied to a space between a projection system and a substrate, and a plate structure is provided to divide the space into two parts. The plate structure has an aperture to allow transmission of the projection beam, has through holes in it to reduce the damping effect of the presence of the plate and optionally has one or more inlets and outlets to provide various flows around the aperture in the plate. An embodiment of the invention may reduce the transportation of contaminants, stray light, temperature gradients, and/or the effect of bubbles on the imaging quality.

Abstract: A method of optimizing lithographic processing to achieve substrate uniformity, is presented herein. In one embodiment, The method includes deriving hyper-sampled correlation information indicative of photoresist behavior for a plurality of wafer substrates processed at pre-specified target processing conditions. The derivation includes micro-exposing subfields of the substrates with a pattern, processing the substrates at the various target conditions, determining photoresist-related characteristics of the subfields (e.g., Bossung curvatures), and extracting correlation information regarding the subfield characteristics and the different target processing conditions to relate the target conditions as a function of subfield characteristics. The method then detects non-uniformities in a micro-exposed subsequent substrate processed under production-level processing conditions and exploits the correlation information to adjust the production-level conditions and achieve uniformity across the substrate.