Abstract: A method includes providing a controller to control a speed of a substrate table in a scan direction, the controller including a first input to receive a first signal representative of a first time period of a movement of the substrate table in a step direction, a second input to receive a second signal representative of a distance in the scan direction to be covered by the substrate table during a scan movement thereof, and a third input to receive a third signal representative of an acceleration of the substrate table. The controller includes an output to provide an output signal to control the speed of the substrate table in the scan direction. The method includes calculating the speed of the substrate table in the scan direction from the first, second and third signal, and compensating the output signal for the calculated speed of the substrate table.

Abstract: A lithographic apparatus includes an illumination system configured to condition a radiation beam; a support constructed to support a patterning device, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam; a substrate table including a substrate holder constructed to hold a substrate; and a projection system configured to project the patterned radiation beam onto a target portion of the substrate, wherein the substrate table is constructed and arranged to reduce or eliminate slip and hysteresis in position and orientation between the substrate table and the substrate holder.

Abstract: A method for damping an object in two or more degrees of freedom, including measuring a position quantity at each of the two or more measurement locations; extracting from the measured position quantities a measurement signal for each dynamic mode; feeding the measurement signal of a dynamic mode to a controller unit associated with the respective dynamic mode, the controller unit providing for each dynamic mode an output signal on the basis of the respective measurement signal; and providing a control signal to each of the two or more actuators, the control signal for each actuator being based on output signals of one or more controller units.

Abstract: A radiation source for generation of extreme ultraviolet radiation or use in high resolution lithography includes a plasma formation site where fuel is contacted by a radiation beam to form a plasma generating EUV radiation. A mirrored collector collects and reflects the EUV radiation generated at a first focus towards a second focus. A contamination barrier is positioned such the periphery of the contamination barrier does not occlude more than 50% of the solid angle subtended by the mirror at the second focus, such that EUV radiation reflected by the collector mirror is not excessively attenuated by passing through the contamination barrier. The contamination barrier serves to trap fuel material such as ions, atoms, molecules or nanodroplets from the plasma to prevent their deposition onto the collector mirror where they reduce the mirror's effective lifetime.

Abstract: A lithographic apparatus includes a position controller configured to control a position of a patterning device in its planar direction by selectively pressing at least one of the side faces of the patterning device. The position controller includes a gas pressure supply and one or more outflow openings directed towards at least one side face of the patterning device so as to exert pressurized gas on this side face in order to control the position of the patterning device in its planar direction in a contactless manner.

Abstract: The invention relates to a lithographic apparatus including an illumination system configured to condition a radiation beam, a patterning device support constructed to support a patterning device, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam, a substrate support constructed to hold a substrate; a projection system configured to project the patterned radiation beam onto a target portion of the substrate, and an encoder-type measurement system configured to at least during projection of the patterned radiation beam onto a target portion of the substrate continuously determine a position quantity of a patterning device supported on the patterning device support using a grid or grating provided on the patterning device.

Abstract: A lithographic apparatus is disclosed that includes a table, at least two target portions on the table or on an object on the table, and a surface material between the at least two target portions. The apparatus further includes an optical system configured to project a beam of radiation, along an optical path towards the table, with a cross-section to irradiate the at least two target portions at the same time. The apparatus further includes a shield moveable into the optical path to restrict the cross-section of the beam of radiation to restrict illumination between the at least two target portions, wherein the surface material between the at least two target portions would degrade when irradiated with radiation from the optical system.

Abstract: First pluralities of radiation spots generated by an array of individually controllable elements are exposed on a substrate. The radiation spots are equally spaced across an entire area of the substrate to be exposed. The substrate is then shifted relative to the array of individually controllable elements in a direction perpendicular to a scanning direction of the substrate. Second pluralities of radiation spots generated by the array of individually controllable elements are alternatingly formed on the substrate with respect to each of the first plurality of spots.

Abstract: A stage system for a lithographic apparatus includes a stage, an over-determined number of actuators arranged to act on the stage, and an electric power supply configured to provide a current to the actuators, wherein the current is supplied to a coil associated with a first actuator of the actuators and to a coil associated with a second actuator of the actuators.

Abstract: A system and method are used to detect parameters regarding an exposure portion or an exposure beam. The system comprising a substrate stage and a metrology stage. The substrate stage is configured to position a substrate to receive an exposure beam from an exposure portion of a lithography system. The metrology stage has a sensor system thereon that is configured to detected parameters of the exposure system or the exposure beam. In one example, the system is within a lithography system, which further comprises an illumination system, a patterning device, and a projection system. The patterning device patterns a beam of radiation from the illumination system. The projection system, which is located within the exposure portion, projects that pattered beam onto the substrate or the sensor system.

Abstract: A porous member is used in a liquid removal system of an immersion lithographic projection apparatus to smooth uneven flows. A pressure differential across the porous member may be maintained at below the bubble point of the porous member so that a single-phase liquid flow is obtained. Alternatively, the porous member may be used to reduce unevenness in a two-phase flow.

Abstract: An immersion lithographic apparatus typically includes a fluid handling system. The fluid handling system generally has a two-phase fluid extraction system configured to remove a mixture of gas and liquid from a given location. Because the extraction fluid comprises two phases, the pressure in the extraction system can vary. This pressure variation can be passed through the immersion liquid and cause inaccuracy in the exposure. To reduce the pressure fluctuation in the extraction system, a buffer chamber may be used. This buffer chamber may be connected to the fluid extraction system in order to provide a volume of gas which reduces pressure fluctuation. Alternatively or additionally, a flexible wall may be provided somewhere in the fluid extraction system. The flexible wall may change shape in response to a pressure change in the fluid extraction system. By changing shape, the flexible wall can help to reduce, or eliminate, the pressure fluctuation.

Abstract: Embodiments of the invention provide a lithographic apparatus including an illumination system configured to condition a radiation beam, a patterning device support constructed to support a patterning device, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam, a substrate table constructed to hold a substrate, a projection system configured to project the patterned radiation beam onto a target portion of the substrate, an active air mount to support the projection system, the active air mount including at least one actuator, and a feed-forward device, the feed-forward device being configured to provide on the basis of a set-point signal of a movable object, a feed-forward signal to the at least one actuator, wherein the feed-forward signal is designed to decrease a disturbance effect on the projection system due to movement of the movable object.

Abstract: An immersion lithographic apparatus has a barrier member surrounding a space between the projection system and the substrate so as to at least partly confine liquid in the space. A jet of liquid is directed radially inwardly in a gap between the barrier member and the substrate and/or between the barrier member and the projection system, to help prevent escape of liquid.

Abstract: A multi-layer mirror includes a multi-layer stack. The multi-layer stack includes a plurality of alternating layers with a multi-layer stack top layer and a spectral filter top layer arranged on the multi-layer stack. The spectral filter top layer includes a first spectral purity enhancement layer that includes a first material m1 and has a first layer thickness d1, an intermediate layer that includes a second material m2 and has a second layer thickness d2. The intermediate layer is arranged on the multi-layer stack top layer. The first material is selected from SiN, Si3N4, SiO2, ZnS, Te, diamond, CsI, Se, SiC, amorphous carbon, MgF2, CaF2, TiO2, Ge, PbF2, ZrO2, BaTiO3, LiF or NaF. The second material includes a material different from the first material, and d1+d2 has a thickness between 1.5 and 40 nm.

Abstract: In an embodiment, there is provided a method of at least partially compensating for a deviation in a property of a pattern feature to be applied to a substrate using a lithographic apparatus. The method includes determining a desired phase change to be applied to at least a portion of a radiation beam that is to be used to apply the pattern feature to the substrate and which would at least partially compensate for the deviation in the property. The determination of the desired phase change includes determining a desired configuration of a phase modulation element. The method further includes implementing the desired phase change to the portion of the radiation beam when applying the pattern feature to the substrate, the implementation of the desired phase change comprising illuminating the phase modulation element with the portion of the radiation beam when the phase modulation element is in the desired configuration.

Abstract: An actuator system is provided that is configured to move a component relative to a base of the actuator system. The actuator system may include first and second actuating elements, each including two sections of material that are joined to each other and have different coefficients of thermal expansion. The two actuating elements may be configured such that if the temperature of one is increased it applies a force on the component in a direction that is opposite to the force applied by the other actuating element if its temperature is increased. The actuator system may further include at least one power supply configured to provide independently controllable heating to the first and second actuating elements.

Abstract: An EUV mask includes, on top of a multi-layer mirror, a spectral purity enhancement layer, for application in an EUV lithographic apparatus. On top of the spectral purity enhancement layer, a patterned absorber layer is provided. The spectral purity enhancement layer includes a first spectral purity enhancement layer, but between the multi-layer mirror and first spectral purity enhancement layer there may be an intermediate layer or a second spectral purity enhancement layer and intermediate layer. The patterned absorber layer may also itself function as an anti-reflection (AR) coating. The AR effect of this absorber layer is a function of the aperture sizes in the pattern. The spectral purity of a mask may be enhanced, such that DUV radiation is diminished relatively stronger than EUV radiation.

Abstract: In a method for determining a structure parameter of a target pattern, a first series of calibration spectra are determined from at least one reference pattern, each spectra being determined using a different known value of at least one structure parameter of the respective reference pattern. The first series of calibration spectra does not take into account parameters of an apparatus used to produce the reference pattern. A representation of each of the first series calibration spectra is stored in a central library. A second series of calibration spectra corresponding to at least one of the stored spectra for a target spectrum is determined using the parameters of the apparatus for measuring the target spectrum. A measured target spectrum is produced by directing a beam of radiation onto the target pattern. The measured target spectrum and the second series of calibration spectra are compared, where this comparison is used to derive a value for the structure parameter of the target pattern.

Abstract: An optical imaging system for producing an optical image includes one or more powered optical elements with polarization aberration that degrade said optical image; and a polarization rotation system configured to reduce the contributions of the polarization aberration to the degradation of said optical image. The optical system may be used in a photolithography tool to pattern substrates such as semiconductor substrates and thereby produce semiconductor devices.