Abstract: A method for accelerating calibration of a fabrication process model, the method including performing one or more iterations of: defining one or more fabrication process model terms; receiving predetermined information related to the one or more fabrication process model terms; generating a fabrication process model based on the predetermined information, the fabrication process model configured to generate one or more predictions related to a metrology gauge; determining whether a prediction related to a dimension of a gauge is within a predetermined threshold of the gauge as measured on a post-fabrication process substrate; and responsive to the prediction not breaching the predetermined threshold, optimizing the one or more fabrication process terms such that the prediction related to the dimension of the gauge is within the predetermined threshold of the gauge as measured on the post-fabrication process substrate.

Abstract: An image is obtained by using a charged particle beam, and a design layout information is generated to select patterns of interest. Grey levels among patterns can be compared with each other to identify abnormal, or grey levels within one pattern can be compared to a determined threshold grey level to identify abnormal.

Abstract: A pellicle having a metal oxysilicide layer. A pellicle having a molybdenum layer, a ruthenium layer and a silicon oxynitride layer, wherein the molybdenum layer is disposed between the ruthenium layer and the silicon oxynitride layer. A method of manufacturing a pellicle for a lithographic apparatus, the method including providing a metal oxysilicide layer. A lithographic assembly including a pellicle having a metal oxysilicide layer. The use of a pellicle having a metal oxysilicide layer in a lithographic apparatus.

Abstract: An attenuated phase shift patterning device including a first component for reflecting radiation, and a second component for reflecting radiation with a different phase with respect to the radiation reflected from the first component, the second component covering at least a portion of the surface of the first component such that a pattern including at least one uncovered portion of the first component is formed for generating a patterned radiation beam in a lithographic apparatus in use, wherein the second component includes a material having a refractive index with a real part (n) being less than 0.95 and an imaginary part (k) being less than 0.04.

Abstract: The invention relates to a pellicle assembly comprising a pellicle frame defining a surface onto which a pellicle is attached. The pellicle assembly comprises one or more three-dimensional expansion structures that allow the pellicle to expand under stress. The invention also relates to a pellicle assembly for a patterning device comprising one or more actuators for moving the pellicle assembly towards and way from the patterning device.

Abstract: A metrology system includes a radiation source configured to generate radiation, an optical element configured to direct the radiation toward a grating structure comprising a non-constant pitch, and a detector configured to receive radiation scattered by the grating structure and generate a measurement based on the received radiation. The metrology system is configured to generate a set of measurements corresponding to a set of locations on the grating structure along a direction of the non-constant pitch and determine a parameter of a lithographic process or a correction for the metrology system based on the set of measurements.

Abstract: A flow restriction, a flow restriction assembly and methods for manufacturing the flow restriction and the flow restriction assembly. The flow restriction is for use in a pipe so as to restrict the flow of a fluid and includes a body extending along an axis and that has i) a central portion having an essentially constant cross section, ii) an upstream portion, wherein the cross-sectional area of the upstream portion monotonically increases in a downstream direction along the axis; and iii) a downstream portion, wherein the cross-sectional area of the downstream portion monotonically decreases in the downstream direction. The flow restriction also has a plurality of central portion projections for engaging the inner surface of the pipe, each of which projects from the surface of the central portion in a direction perpendicular to the surface of the central portion by a distance of less than 500 ?m.

Abstract: A substrate table for an immersion lithographic apparatus is disclosed having a recess, configured to receive a substrate of a given size, and a fluid extraction system, configured to extract fluid from a gap between the edge of the substrate and the edge of the recess, the fluid extraction system configured such that the rate of flow of fluid extracted from a localized section of the gap is greater than the rate of flow of fluid extracted from another section of the gap.

Abstract: A metrology tool for determining a parameter of interest of a structure fabricated on a substrate, the metrology tool comprising: an illumination optical system for illuminating the structure with illumination radiation under a non-zero angle of incidence; a detection optical system comprising a detection optical sensor and at least one lens for capturing a portion of illumination radiation scattered by the structure and transmitting the captured radiation towards the detection optical sensor, wherein the illumination optical system and the detection optical system do not share an optical element.

Abstract: Disclosed is a method of metrology comprising using measurement illumination to measure a target, said measurement illumination comprising a plurality of illumination conditions. The method comprises performing a first measurement capture with a first subset of said plurality of illumination conditions, e.g., each comprising a positive weighting, to obtain a first parameter value and performing a second measurement capture with a second subset of said plurality of illumination conditions, e.g., each comprising a negative weighting, to obtain a second parameter value. An optimized parameter value is determined as a weighted combination of at least the first parameter value and the second parameter value.

Abstract: A scatterometer for measuring a property of a target on a substrate includes a radiation source, a detector, and a processor. The radiation source produces a radiated spot on the target. The scatterometer adjusts a position of the radiated spot along a first direction across the target and along a second direction that is at an angle with respect to the first direction. The detector receives radiation scattered by the target. The received radiation is associated with positions of the radiated spot on the target along at least the first direction. The detector generates measurement signals based on the positions of the radiated spot on the target. The processor outputs, based on the measurement signals, a single value that is representative of the property of the target. The processor also combines the measurement signals to output a combined signal and derives, based on the combined signal, the single value.

Abstract: The present invention provides a method to obtain a height map of a substrate having alignment marks, the method comprising the steps: determining a height of one or more locations or areas of the substrate, and determining the height map of the substrate on the basis of the determined height of the one or more locations or areas of the substrate and a shape model of the substrate.

Abstract: A method for aligning a wafer image with a reference image, comprising: searching for a targeted reference position on the wafer image for aligning the wafer image with the reference image; and in response to a determination that the targeted reference position does not exist: defining a current lock position and an area that encloses the current lock position on the wafer image; computing an alignment score of the current lock position; comparing the alignment score of the current lock position with stored alignment scores of positions previously selected in relation to aligning the wafer image with the reference image; and aligning the wafer image with the reference image based on the comparison.

Abstract: A defect inspection system is disclosed. According to certain embodiments, the system includes a memory storing instructions implemented as a plurality of modules. Each of the plurality of modules is configured to detect defects having a different property. The system also includes a controller configured to cause the computer system to: receive inspection data representing an image of a wafer; input the inspection data to a first module of the plurality of modules, the first module outputs a first set of points of interests (POIs) having a first property; input the first set of POIs to a second module of the plurality of modules, the second module output a second set of POIs having the second property; and report that the second set of POIs as defects having both the first property and the second property.

Abstract: An immersion lithographic apparatus is disclosed in which at least a part of the liquid supply system (which provides liquid between the projection system and the substrate) is moveable in a plane substantially parallel to a top surface of the substrate during scanning. The part is moved to reduce the relative velocity between that part and the substrate so that the speed at which the substrate may be moved relative to the projection system may be increased.

Abstract: A substrate holder including: a main body having a main body surface; a plurality of burls projecting from the main body surface and configured for supporting the substrate; and an edge seal projecting from the main body surface, wherein: the edge seal is spaced apart from the plurality of burls so as to define a gap therebetween, the gap having a width greater than or equal to about 75% of a pitch of the plurality of burls; the plurality of burls includes a first group of burls and a second group of burls surrounding the first group of burls; and the stiffness in the direction perpendicular to the support plane per unit area of the second group of burls is greater than or equal to about 150% of the stiffness in the direction perpendicular to the support plane per unit area of the first group of burls.

Abstract: A method of metrology target design is described. The method includes determining a sensitivity of a parameter of a metrology target design to a perturbation of a process parameter for forming, or measuring the formation of, the metrology target, and determining a robustness of the metrology target design based on the sum of the sensitivity multiplied by the perturbation of at least one of the process parameters.

Abstract: The invention relates to an electronic system for an accelerometer having a piezoelectric element and a first mechanical resonance frequency, comprising: a) a damping circuit configured to: —receive an acceleration signal from the piezoelectric element; —electronically dampen an amplitude of the first mechanical resonance frequency; and—generate a damped acceleration signal, b) an extender configured to: —receive the damped acceleration signal; —extend the frequency response; and—output an extended damped acceleration signal, wherein the extender is configured to have a first electronic anti-resonance frequency matching the damped first mechanical resonance frequency, and to have a frequency response between the first electronic anti-resonance frequency and a higher second frequency that is substantially opposite to a corresponding frequency response of the combination of the accelerometer and the damping circuit.

Abstract: The present invention provides a testing substrate (W) for estimating stress in production substrates due to a substrate support, said testing substrate having a support surface (SS) divided into predefined portions, wherein the predefined portions comprise at least one first portion (1) having a first coefficient of friction being substantially uniform across the at least one first portion, and at least one second portion (2) having a second coefficient of friction being substantially uniform across the at least one second portion, wherein the second coefficient of friction is different to the first coefficient of friction. The present invention also provides a method for estimating stress in a substrate due to a substrate support and a system for making such an estimation.

Abstract: A method for gauge selection for use in calibrating a process model associated with a patterning process. The method involves obtaining a set of initial gauges having one or more properties (e.g., gauge name, weight, dose, focus, model error, etc.) associated with the patterning process; and selecting a subset of initial gauges from the set of initial gauges, the selecting the subset of initial gauges including determining a first subset of gauges from the set of initial gauges based on a first property parameter of the one or more properties, the first subset of gauges being configured to calibrate a process model (e.g., optics model, resist mode., etc.).