Patents Assigned to ASML Netherlands
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Patent number: 11300883Abstract: A method to determine a patterning process parameter, the method comprising: for a target, calculating a first value for an intermediate parameter from data obtained by illuminating the target with radiation comprising a central wavelength; for the target, calculating a second value for the intermediate parameter from data obtained by illuminating the target with radiation comprising two different central wavelengths; and calculating a combined measurement for the patterning process parameter based on the first and second values for the intermediate parameter.Type: GrantFiled: September 19, 2018Date of Patent: April 12, 2022Assignee: ASML Netherlands B.V.Inventors: Martin Jacobus Johan Jak, Simon Gijsbert Josephus Mathijssen, Kaustuve Bhattacharyya, Won-Jae Jang, Jinmoo Byun
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Patent number: 11300889Abstract: Methods and apparatuses for determining in-plane distortion (IPD) across a substrate having a plurality of patterned regions. A method includes obtaining intra-region data indicative of a local stress distribution across one of the plurality of patterned regions; determining, based on the intra-region data, inter-region data indicative of a global stress distribution across the substrate; and determining, based on the inter-region data, the IPD across the substrate.Type: GrantFiled: July 3, 2019Date of Patent: April 12, 2022Assignee: ASML Netherlands B.V.Inventors: Leon Paul Van Dijk, Richard Johannes Franciscus Van Haren, Subodh Singh, Ilya Malakhovsky, Ronald Henricus Johannes Otten, Amandev Singh
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Patent number: 11302512Abstract: An electron beam apparatus includes an electron optics system to generate an electron beam, an object table to hold the specimen at a target position so that a target portion of the specimen is irradiated by the electron beam, and a positioning device to displace the object table relative to the electron beam. The positioning device includes a stage actuator and a balance mass. The stage actuator exerts a force onto the object table to cause an acceleration of the object table. The force onto the object table results in a reaction force onto the balance mass. The balance mass moves in response to the reaction force. The positioning device enables the balance mass to move in a first direction in response to a component of the reaction force in the first direction.Type: GrantFiled: March 4, 2020Date of Patent: April 12, 2022Assignee: ASML Netherlands B.V.Inventors: Marcel Koenraad Marie Baggen, Antonius Henricus Arends, Lucas Kuindersma, Johannes Hubertus Antonius Van De Rijdt, Peter Paul Hempenius, Robertus Jacobus Theodorus Van Kempen, Niels Johannes Maria Bosch, Henricus Martinus Johannes Van De Groes, Kuo-Feng Tseng, Hans Butler, Michael Johannes Christiaan Ronde
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Patent number: 11303175Abstract: An electromagnetic motor is described, the electromagnetic motor comprising: a magnet assembly configured to generate a two-dimensional alternating magnetic field having a pitch Pm1 in a first direction and a pitch Pm2 in a second direction; a coil assembly configured to co-operate with the magnet assembly to generate a first force in the first direction and a second force in the second direction, wherein the coil assembly comprises a first coil set comprising a plurality of first coils for generating the first force and a second coil set comprising a plurality of second coils for generating the second force, wherein a ratio R1 of a coil pitch Pc1 in the first coil set in the first direction over Pm1 is different from a ratio R2 of a coil pitch Pc2 in the second coil set in the second direction over Pm2.Type: GrantFiled: January 5, 2017Date of Patent: April 12, 2022Assignee: ASML Netherlands B.V.Inventors: Maarten Hartger Kimman, Dave Braaksma, Peter Michel Silvester Maria Heijmans, Christiaan Alexander Hoogendam
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Patent number: 11300891Abstract: Offline metrology measurements are performed on substrates that have been subjected to lithographic processing. Model parameters are calculated by fitting the measurements to an extended high-order substrate model defined using a combination of basis functions that include an edge basis function related to a substrate edge. A radial edge basis function may be expressed in terms of distance from a substrate edge. The edge basis function may, for example, be an exponential decay function or a rational function. Lithographic processing of a subsequent substrate is controlled using the calculated high-order substrate model parameters, in combination with low-order substrate model parameters obtained by fitting inline measurements to a low order model.Type: GrantFiled: December 3, 2020Date of Patent: April 12, 2022Assignee: ASML Netherlands B.V.Inventors: Jasper Menger, Paul Cornelis Hubertus Aben, Everhardus Cornelis Mos
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Patent number: 11300888Abstract: A method and control system for determining stress in a substrate. The method includes determining a measured position difference between a measured position of at least one first feature and a measured position of at least one second feature which have been applied on a substrate, and determining local stress in the substrate from the measured position difference.Type: GrantFiled: February 7, 2018Date of Patent: April 12, 2022Assignee: ASML Netherlands B.V.Inventors: Richard Johannes Franciscus Van Haren, Leon Paul Van Dijk, Ilya Malakhovsky, Ronald Henricus Johannes Otten
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Patent number: 11300886Abstract: A method for correcting values of one or more feed-forward parameters used in a process of patterning substrates, the method including: obtaining measured overlay and/or alignment error data of a patterned substrate; and calculating one or more correction values for the one or more feed-forward parameters in dependence on the measured overlay and/or alignment error data.Type: GrantFiled: July 12, 2018Date of Patent: April 12, 2022Assignee: ASML Netherlands B.V.Inventors: Hadi Yagubizade, Ahmet Koray Erdamar, Hakki Ergün Cekli
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Patent number: 11302514Abstract: Systems and methods for observing a sample in a multi-beam apparatus are disclosed. A charged particle optical system may include a deflector configured to form a virtual image of a charged particle source and a transfer lens configured to form a real image of the charged particle source on an image plane. The image plane may be formed at least near a beam separator that is configured to separate primary charged particles generated by the source and secondary charged particles generated by interaction of the primary charged particles with a sample. The image plane may be formed at a deflection plane of the beam separator. The multi-beam apparatus may include a charged-particle dispersion compensator to compensate dispersion of the beam separator. The image plane may be formed closer to the transfer lens than the beam separator, between the transfer lens and the charged-particle dispersion compensator.Type: GrantFiled: August 8, 2019Date of Patent: April 12, 2022Assignee: ASML Netherlands B.V.Inventors: Weiming Ren, Xuedong Liu, Xuerang Hu, Zong-wei Chen
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Patent number: 11300890Abstract: A support table configured to support a substrate, the support table having a support section to support a substrate and a conditioning system to supply heat energy to and/or remove heat energy from the support section, wherein the conditioning system comprises a plurality of conditioning units that are independently controllable.Type: GrantFiled: December 20, 2019Date of Patent: April 12, 2022Assignee: ASML NETHERLANDS B.V.Inventors: Johan Gertrudis Cornelis Kunnen, Johannes Henricus Wilhelmus Jacobs, Coen Cornelis Wilhelmus Verspaget, Ronald Van Der Ham, Ivo Adam Johannes Thomas, Martijn Houben, Thibault Simon Mathieu Laurent, Gregory Martin Mason Corcoran, Ruud Hendrikus Martinus Johannes Bloks, Gerben Pieterse, Pieter Lein Joseph Gunter, Marinus Jan Remie, Sander Catharina Reinier Derks
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Patent number: 11300892Abstract: A sensor apparatus (300) for determining a position of a target (330) of a substrate (W) comprising, projection optics (315;321) configured to project a radiation beam (310) onto the substrate, collection optics (321) configured to collect measurement radiation (325) that has scattered from the target, a wavefront sensing system (335) configured to determine a pupil function variation of at least a portion (355) of the measurement radiation and output a signal (340) indicative thereof, and a measurement system (350) configured to receive the signal and to determine the position of the target in at least partial dependence on the collected measurement radiation and the determined pupil function variation of at least a portion of the measurement radiation.Type: GrantFiled: June 13, 2019Date of Patent: April 12, 2022Assignee: ASML Netherlands B.V.Inventors: Simon Reinald Huisman, Alessandro Polo
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Patent number: 11300887Abstract: A method to change an etch parameter of a substrate etching process, the method including: making a first measurement of a first metric associated with a structure on a substrate before being etched; making a second measurement of a second metric associated with a structure on a substrate after being etched; and changing the etch parameter based on a difference between the first measurement and the second measurement.Type: GrantFiled: November 6, 2017Date of Patent: April 12, 2022Assignee: ASML Netherlands B.V.Inventors: Richard Johannes Franciscus Van Haren, Victor Emanuel Calado, Leon Paul Van Dijk, Roy Werkman, Everhardus Cornelis Mos, Jochem Sebastiaan Wildenberg, Marinus Jochemsen, Bijoy Rajasekharan, Erik Jensen, Adam Jan Urbanczyk
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Publication number: 20220107176Abstract: An inspection apparatus for adjusting a working height for a substrate for multiple target heights is disclosed. The inspection apparatus includes a radiation source configured to provide a radiation beam and a beam splitter configured to split the radiation beam into multiple beamlets that each reflect off a substrate. Each beamlet contains light of multiple wavelengths. The inspection apparatus includes multiple light reflecting components, wherein each light reflecting component is associated with one of the beamlets reflecting off the substrate and is configured to support a different target height for the substrate by detecting a height or a levelness of the substrate based on the beamlet reflecting off the substrate.Type: ApplicationFiled: September 28, 2021Publication date: April 7, 2022Applicant: ASML NETHERLANDS B.V.Inventors: Yan WANG, Jian ZHANG, Zhiwen KANG, Yixiang WANG
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Patent number: 11294291Abstract: A component of a lithographic apparatus, the component having a contaminant trap surface provided with recesses configured to trap contaminant particles and to reduce specular reflection of DUV radiation. The recesses can have at least one dimension less than or equal to about 2 ?m, desirably less than 1 ?m.Type: GrantFiled: March 11, 2019Date of Patent: April 5, 2022Assignee: ASML Netherlands B.V.Inventors: Marcus Adrianus Van De Kerkhof, Johannes Hubertus Josephina Moors
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Patent number: 11294289Abstract: A method for selecting an optimal set of locations for a measurement or feature on a substrate, the method includes: defining a first candidate solution of locations, defining a second candidate solution with locations based on modification of a coordinate in a solution domain of the first candidate solution, and selecting the first and/or second candidate solution as the optimal solution according to a constraint associated with the substrate.Type: GrantFiled: September 21, 2017Date of Patent: April 5, 2022Assignee: ASML Netherlands B.V.Inventors: Pierluigi Frisco, Svetla Petrova Matova, Jochem Sebastiaan Wildenberg
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Patent number: 11294294Abstract: Methods and apparatuses for determining a position of an alignment mark applied to a region of a first layer on a substrate using a lithographic process by: obtaining an expected position of the alignment mark; obtaining a geometrical deformation of the region due to a control action correcting the lithographic process; obtaining a translation of the alignment mark due to the geometrical deformation; and determining the position of the alignment mark based on the expected position and the translation.Type: GrantFiled: February 6, 2019Date of Patent: April 5, 2022Assignee: ASML Netherlands B.V.Inventors: Richard Johannes Franciscus Van Haren, Leon Paul Van Dijk, Orion Jonathan Pierre Mouraille, Anne Marie Pastol
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Patent number: 11295930Abstract: Systems and methods are provided for charged particle detection. The detection system can comprise a signal processing circuit configured to generate a set of intensity gradients based on electron intensity data received from a plurality of electron sensing elements. The detection system can further comprise a beam spot processing module configured to determine, based on the set of intensity gradients, at least one boundary of a beam spot; and determine, based on the at least one boundary, that a first set of electron sensing elements of the plurality of electron sensing elements is within the beam spot. The beam spot processing module can further be configured to determine an intensity value of the beam spot based on the electron intensity data received from the first set of electron sensing elements and also generate an image of a wafer based on the intensity value.Type: GrantFiled: February 1, 2018Date of Patent: April 5, 2022Assignee: ASML NETHERLANDS B.V.Inventors: Yongxin Wang, Weiming Ren, Zhonghua Dong, Zhongwei Chen
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Publication number: 20220100935Abstract: A method for determining a training pattern in a layout patterning process. The method includes generating a plurality of features from patterns in a pattern set; grouping the patterns in the pattern set into individual groups based on similarities in the plurality of generated features; and selecting representative patterns from the individual groups to determine the training pattern. In some embodiments, the method is a method for training a machine learning model in a layout patterning process. The method may include, for example, providing representative patterns from the individual groups to the machine learning model to train the machine learning model to predict a continuous transmission mask (CTM) map for optical proximity correction (OPC) in the layout patterning process.Type: ApplicationFiled: January 10, 2020Publication date: March 31, 2022Applicant: ASML NETHERLANDS B.V.Inventor: Wei-jie CHEN
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Publication number: 20220099498Abstract: Disclosed is a wavefront sensor for measuring a tilt of a wavefront at an array of locations across a beam of radiation, wherein said wavefront sensor comprises a film, for example of Zirconium, having an indent array comprising an indent at each of said array of locations, such that each indent of the indent array is operable to perform focusing of said radiation. Also disclosed is a radiation source and inspection apparatus comprising such a wavefront sensor.Type: ApplicationFiled: December 19, 2019Publication date: March 31, 2022Applicant: ASML Netherlands B.V.Inventors: Sietse Thijmen VAN DER POST, Peter Danny VAN VOORST
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Publication number: 20220100107Abstract: A method of aligning a substrate within an apparatus. The method includes determining a substrate grid based on measurements of a plurality of targets, each at different locations on a substrate. The determining includes repetitions of updating the substrate grid after each measurement of a target, and using the updated grid to align a measurement of a subsequent target.Type: ApplicationFiled: February 14, 2020Publication date: March 31, 2022Applicant: ASML NETHERLANDS B.V.Inventors: Henricus Martinus Johannes VAN DE GROES, Johannes Hubertus Antonius VAN DE RIJDT, Marcel Pieter Jacobus PEETERS, Chien-Hung TSENG, Henricus Petrus Maria PELLEMANS
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Publication number: 20220100098Abstract: A method of determining a characteristic of one or more processes for manufacturing features on a substrate, the method including: obtaining image data of a plurality of features on a least part of at least one region on a substrate; using the image data to obtain measured data of one or more dimensions of each of at least some of the plurality of features; determining a statistical parameter that is dependent on the variation of the measured data of one or more dimensions of each of at least some of the plurality of features; determining a probability of defective manufacture of features in dependence on a determined number of defective features in the image data; and determining the characteristic of the one or more processes to have the probability of defective manufacture of features and the statistical parameter.Type: ApplicationFiled: February 6, 2020Publication date: March 31, 2022Applicant: ASML NETHERLANDS B.V.Inventors: Wim Tjibbo TEL, Hermanus Adrianus DILLEN, Marc Jurian KEA, Mark John MASLOW, Koen THUIJS, Peter David ENGBLOM, Ralph Timotheus HUIJGEN, Daan Maurits SLOTBOOM, Johannes Catharinus Hubertus MULKENS