Abstract: Method for manufacturing a semiconductor array, in which a conductive substrate (100), a component region (400), and an insulation layer (200), isolating the component region (400) from the conductive substrate (100), are formed, a trench (700) is etched in the component region (400) as far as the insulation layer (200), then the trench (700) is etched further as far as the conductive substrate (100), the walls (701) of the trench (700) are formed with an insulation material (710), and an electrical conductor (750, 755, 760) is introduced into the trench (700) and connected conductively to the conductive substrate (100), wherein before the trench (700) is etched, a layer sequence comprising a first oxide layer (510), a polysilicon layer (520) on top of the first oxide layer (510), and a second oxide layer (530) on top of the polysilicon layer (520) is applied to the component region (400).

Abstract: A MOS transistor, and a method for producing the same, is provided with a source region, a gate-region, a drain region, and a drift region in an SOI wafer. The SOI-wafer has a carrier layer, which carries an insulating intermediate layer, and whereby the insulating intermediate layer carries an active semiconductor layer, in which laterally different doping material concentrations define the source region, the drift region, and the drain region. Whereby, the active semiconductor layer, at least in a portion of the drift region, is thicker than in the source region. The MOS transistor is characterized in that the active semiconductor layer, in a vertical direction, is completely separated by the insulating intermediate layer from the carrier layer.

Abstract: A method for manufacturing a semiconductor array, particularly a high-frequency bipolar transistor, is provided, the method includes process steps, so that a dielectric is produced on a mono-crystalline, first semiconductor region of a first conductivity type, a silicide layer is deposited and patterned in such a way that the silicide layer is insulated from the first semiconductor region by the dielectric, and, to form a base region, a second semiconductor region of a second conductivity type is applied to the first semiconductor region and to the silicide layer in such a way that the second semiconductor region lies with a first interface on the first semiconductor region and with a second interface on the silicide layer.

Abstract: A circuit is provided for multiplying a frequency by a cascade formed of a transadmittance having a transfer characteristic and a transimpedance having a transfer characteristic. The transadmittance includes two terminals for a signal of a first frequency and the transimpedance includes two terminals for a signal of a second frequency. A transfer characteristic of the transimpedance is steeper than a transfer characteristic of the transadmittance, and a modulation region of the transadmittance is larger than a modulation region of the transimpedance.

Abstract: A device for transmitting and receiving is disclosed that includes: a) an antenna, b) a transmitting/receiving unit for transmitting and receiving data according to a communications standard, which has a transmitting unit, connected to the antenna, for transmitting first data frames to a second transmitting/receiving device and a receiving unit, connected to the antenna, for receiving second data frames from the second transmitting/receiving device, and c) a control unit, connected to the transmitting/receiving unit for controlling the transmitting/receiving unit, whereby the control unit is designed (c1) to instruct the transmitting/receiving unit to transmit a first data frame and (c2) to receive the second data frame from the transmitting/receiving unit.

Abstract: A storage circuit arrangement for a semi-passive or passive RFID transponder is provided. In prior-art circuit arrangements, storage capacitors are routinely discharged in an undefined fashion via leakage currents for a control mode of the transponder, so that the persistence times depend greatly on the ambient temperature and on existing manufacturing tolerances. It is proposed according to an embodiment to charge a first electrical storage device with a first reference voltage and then to discharge it again in a defined fashion during a time t via discharge device. Advantageously, in addition a storage mode of the first storage device to hold the control mode can be transmitted in a controlled fashion via a switching device to a second storage device with C2<<C1 to shorten a settle time and to accelerate the anticollision.

Abstract: A device is provided for subjecting a plurality of singulated semiconductor components to functional verification, which includes contact pins that are integrated in a test socket and establish a mechanical and electrical contact between the test socket and the integrated semiconductor circuits, a holding fixture (DUT board) connected to the test socket for transmitting electrical signals to and from a program-controlled electronic switching system, and lines and control devices for operating at least one pneumatic transport and holding device for picking up, orienting and positioning the singulated semiconductor components, an inert gas is provided as the medium for operating the pneumatic devices.

Abstract: A method and device for wireless data transmission between a base station and one or more transponders, in which electromagnetic carrier waves are emitted by the base station and symbols are transmitted from a given transponder to the base station by modulation and backscattering of the electromagnetic carrier waves, wherein a change in a modulation state takes place synchronously with synchronization markers transmitted by the base station. A change in the modulation state is carried out by a transponder with a specifiable time delay that is relative to the synchronization markers.

Abstract: A method and circuit for amplifying and demodulating amplitude-modulated signals is disclosed that amplifies a primary signal into an amplified signal, bandpass filters the amplified signal into a filtered signal, compares the filtered signal with a regulation threshold and regulates the gain of the primary signal such that peak values of the filtered signal approach the regulation threshold, compares the filtered signal with a signal threshold, and demodulates the result of the comparison. Whereby a value of the signal threshold is smaller than a value of the regulation threshold.

Abstract: A method for detecting occupation of an adjacent channel by a signal with the aid of a complex-valued bandpass signal having an information channel component and/or an adjacent channel component. In accordance with the invention, a) a real-valued bandpass signal is derived in that the complex-valued bandpass signal is filtered and the real component is produced from the filtered signal, b) the real-valued bandpass signal is transposed into a first baseband signal, c) the first baseband signal is filtered so that spectral components influenced by the information channel component are suppressed, and d) the first filtered signal is evaluated and a binary occupation signal is generated to indicate the occupation of the adjacent channel as a function of the evaluated first filtered signal. The invention further discloses a corresponding device for detecting occupation, as well as a transmitting/receiving device and an integrated circuit having such a device.

Abstract: Semiconductor array and method for manufacturing a semiconductor array, wherein a conductive substrate (100), an element region (400), and an insulation layer (200), isolating the element region (400) from the conductive substrate (100), are formed, a trench (700) is etched in the element region (400) as far as the insulation layer (200), the trench (700) is etched further in the insulation layer (200) as far as the conductive substrate (100), and within the trench (700), the conductive substrate (100) is at least partially etched to form conductive substrate regions (141, 142, 143, 144, 145, 146), isolated from one another.

Abstract: A receiver is synchronized with a first clock frequency or signal of a transmitter for the proper reception of transmitted and received signals, such as data carrying signals (DS). The first clock frequency is for example a carrier frequency. A local oscillator generates a second clock frequency or signal in the receiver. Cycles or impulses of the second clock signal are counted between predetermined flanks of the received signal (DS) to provide a count (N). Based on the second clock signal and the count (N) a first ratio (TV) is provided that represents a first ratio between the first clock frequency or signal and the second clock frequency or signal. The first ratio is compared with a predetermined or given second ratio (TV) to provide a comparing result. The predetermined second ratio is then updated in response to the comparing result to provide an updated ratio (TV?). The present circuit is constructed to perform these steps.

Abstract: A process for producing a base connection of a bipolar transistor is provided. The process includes the steps of providing a semiconductor structure that can include a three-dimensional sacrificial structure that is selectively removable with respect to adjacent regions. A first semiconductor layer and a second layer of dielectric material is deposited. The first semiconductor layer is partially exposed by partial removal of the second layer. A first reaction layer is deposited that, together with the first semiconductor layer forms reaction products, which are selectively removable with respect to adjacent regions. Remaining material of the first reaction layer that has not reacted with the material of the first semiconductor layer is removed. A second reaction layer is deposited that, with the first semiconductor layer, forms a low-resistivity compound. Remaining material of the second reaction layer that has not reacted with the material of the first semiconductor layer is removed.

Abstract: An infrared receiver chip is provided for installation in a standardized lead frame of an infrared receiver module having multiple contact areas for connection of associated function points of the lead frame via bond wires, wherein at least one contact area is spaced apart from the outer edge of the infrared receiver chip and all contact areas are positioned with respect to one another such that, when the infrared receiver chip is installed in any standardized lead frame, the respective bond wires do not cross when the bond wires are routed directly from the associated contact area to the associated function point.

Abstract: An integrated circuit layout having a first circuit connection, a second circuit connection, and active components is provided, whereby the active components each have an input connection and an output connection and a predefined maximum reverse voltage between the input connection and the output connection, and whereby a maximum value of a voltage swing, achieved between the first circuit connection and the second circuit connection, is greater than the predefined maximum reverse voltage. The circuit layout is characterized in that an input connection of an n-th active component is connected to an output connection of an (n?1)-th active component, and that the circuit layout changes the potentials of terminal gates of the (n?1)-th component and the n-th component synchronously to a control signal.

Abstract: An operational amplifier and use of an operational amplifier is provided that includes an input differential amplifier, which is connected to a first input and to a second input and a differential output stage, which is connected to the input differential amplifier and a first output and a second output. The differential output stage has a first branch with two first transistors, whose drain and/or collector are connected to one another and to the first output. The differential output stage has a second branch with two second transistors, whose drain and/or collector are connected to one another and to the second output. The first gates and/or the first bases of the two first transistors in the first branch are connected to one another and to a first output of the input differential amplifier. The second gates and/or the second bases of the two second transistors in the second branch are connected to one another and to a second output of the input differential amplifier.

Abstract: A circuit arrangement is provided for a power supply to a transponder including an antenna resonant circuit and a downstream rectifier circuit for receiving and for rectifying an electromagnetic signal, a charging capacitor connected downstream on the output side of the rectifier circuit to provide a first supply voltage, with a tuning circuit for tuning the antenna resonant circuit to its resonance frequency, and with an auxiliary voltage source, which is designed to provide a second supply voltage, lower than the first supply voltage, for supplying the tuning circuit. A method is also provided for supplying power to a transponder with a first supply voltage, as well as a transponder having a circuit arrangement for a power supply.

Abstract: An integrated circuit is disclosed having at least one digital input, which has a first circuit section that has a current-voltage characteristic and that in the absence of an input signal holds a voltage at the input at a defined value, and having a second circuit section that provides a signal that is internal to the circuit and whose state does not directly show itself at an output of the circuit. The first circuit section has a control input for a control signal and is designed to change its current-voltage characteristic when the control signal is present at the control input. In addition, a method for testing such a circuit is disclosed.

Abstract: A lateral DMOS transistor is disclosed that includes a first region of a first conductivity type, which is surrounded on the sides by a second region of a second conductivity type, whereby a boundary line between both regions has opposite straight sections and curved sections linking the straight sections, and with a first dielectric structure, which serves as a field region and is embedded in the first region and surrounds a subregion of the first region. Whereby the first distance between the first dielectric structure and the boundary line is greater along the straight sections than along the curved sections.

Abstract: A radio system for communication is provided that has a differential amplifier for amplifying a transmission frequency, particularly 2.4 GHz, wherein the differential amplifier has a first inductor, which is magnetically coupled to a second inductor, and a capacitor. The capacitor, the first inductor, and the second inductor are wired into a resonant circuit in such a way that the resonant circuit has a common-mode impedance for a common-mode signal and a push-pull impedance, different from the common-mode impedance, for the push-pull signal.