Abstract: The invention relates to the fabrication of optical microsystems for miniature cameras or miniature matrix displays. It is proposed that N dot matrix arrays and associated circuits should be collectively fabricated, on the front of a semiconductor wafer, to produce N identical chips, with on the side of each array, external connection lands; a plate, used to collectively form N identical optical image-forming structures, each optical image-forming structure covering a respective chip and being designed to form an overall image corresponding with the whole of the matrix array of the respective chip, is fabricated collectively and placed in close contact with the front of the semiconductor wafer; through the thickness of the wafer, conductive vias extending to the contact lands are opened, and, only after these various operations, the wafer is divided into N individual optical microsystems comprising an electronic chip covered by an optical structure.

Abstract: The invention relates to a blocking sampler intended in particular to be used upstream of a fast analog digital converter. The blocking sampler comprises two main semi-samplers each having a respective differential input (E, E?) and a respective differential output (S, S?). With each main semi-sampler is associated a respective auxiliary blocking semi-sampler comprising an auxiliary tracking transistor (T1a, T1a?) powered by a voltage tapped off from the terminals of the storage capacitor (C?, C) of the other main blocking sampler, an auxiliary storage capacitor (Ca, Ca?) linked to the output of this auxiliary tracking transistor and an auxiliary current switch (T2a, T3a, SC1a; T2?a, T3?a, SC1a?) controlled in synchronism with the current switch of the main blocking sampler so as to authorize or block the passage of current in the auxiliary tracking transistor. The auxiliary samplers serve to improve the sampling dynamics in the cases where the signal to be sampled varies rapidly.

Abstract: The invention pertains to a process and to a device for positioning an optical component between two optical fibers furnished at their end with lenses comprising: drilling a support in such a way as to fix therein a capillary tube whose inside diameter is designed to slip an optical fiber thereinto, fixing the capillary tube in the drilling of the support, making a blind cut of the support and of the capillary tube, in such a way as to separate the capillary tube into two parts, a first plane face of the cut being perpendicular to a longitudinal axis of the capillary tube, positioning the component on the first plane face, positioning an optical fiber in each of the parts. The device comprises a support through which is fixed a capillary tube, the support comprising a cut so as to separate the capillary tube into two parts. The cut comprises a first plane face perpendicular to a longitudinal axis of the capillary tube. The component is positioned on the first plane face.

Abstract: The invention relates to tunable wavelength-selective optical filters for letting light of a narrow optical spectrum band, centered around an adjustable wavelength, to pass through and to stop wavelengths lying outside this band. More particularly, the invention relates to a process for the collective fabrication of optical filtering components, consisting in producing a plurality of optical filtering components on a transparent substrate. The process further comprises covering the plurality of components with a transparent collective cover, in optically testing each component individually, and in separating the various components from one another. The invention also relates to a wafer of components, comprising a transparent substrate on which a plurality of optical filtering components has been produced, a transparent cover (8) collectively covering the components. The wafer further includes means for individually testing each component.

Abstract: The present disclosure relates to a fingerprint sensor device. The device comprises a sensor having a sensitive active region that is electrically connected to a substrate. The device further includes a first resin bump positioned proximate to the sensitive active region. The first resin bump forms a finger guide that positions the finger over the sensitive active region when the finger slides in contact with the first resin bump.

Abstract: The invention relates to fast analogue-to-digital converters having differential inputs and a parallel structure, comprising at least one network of N series resistors with value r and one network of N comparators. The series resistor network receives a reference voltage and is traversed by a fixed current Io and the row i (i varying from 1 to N) comparator essentially comprises a dual differential amplifier with four inputs; two inputs receive a differential voltage VS?VN to be converted, a third being connected to a row i resistor of the network, and a fourth input being connected to an N-i row resistor of the network. The resistor network is supplied by a variable reference voltage originating from a servoloop circuit which locks the voltage level of the middle of the resistor network at a voltage equal to the common mode voltage (VS?VSN)/2 present at the output of the sample-and-hold module.

Abstract: An embodiment of the present invention related to fingerprint sensors is described. The sensor comprises an integrated-circuit chip having a sensitive surface, a substrate provided with electrical connections and wire-bonding wires connecting the chip to the electrical connections. The sensor further includes a molded protective resin at least partly covering the substrate and the chip and completely encapsulating the wire-bonding wires. The resin forms, on at least one side of the chip and at most three sides, a bump rising to at least 500 microns above the sensitive surface, this bump encapsulating the wire-bonding wires and constituting a guide for a finger, the fingerprint of which it is desired to detect.

Abstract: The invention relates to wavelength-selective and tunable optical filters for transmitting the light in a narrow optical spectral band, centered around an adjustable wavelength, and for blocking the transmission of wavelengths lying outside of this band. In a micromachined monolithic structure containing the optical filter proper, the component comprises a low-absorption light detection element used for slaving the tuning control of the filter to a wavelength received by the filter, this element transmitting the majority of the radiation at this wavelength. The filter is a Fabry-Pérot interferometric filter, the cavity (C) of which is tuned to a value that maximizes the power detected by the light detection element. The filter is preferably based on layers of indium phosphide and air gaps. The detection element preferably comprises a layer of gallium-indium arsenide 74 suitable for detection of the intended wavelength band.

Abstract: The invention relates to very small-sized color image sensors. The sensor according to the invention is made by the following method: the formation, on the front face of the semiconductive wafer (10), of a series of active zones (ZA) comprising image detection circuits and each corresponding to a respective image sensor, each active zone comprising photosensitive zones (12) covered with conductive and insulating layers (14, 16) enabling the collection of electrical charges generated in the photosensitive zones, the transfer of the wafer (10) by its front face against the front face of a supporting substrate (20), the elimination of the major part of the thickness of the semiconductive wafer, leaving a very fine semiconductive layer (30) on the substrate, this fine semiconductive layer comprising the photosensitive zones, the deposition and etching of color filters (18) on the semiconductive layer thus thinned.

Abstract: The present invention relates to the fabrication of image sensors and especially to color image sensors. The image sensor includes a region in which there is a photosensitive matrix onto which the image to be converted into electronic signals is projected and an outer region comprising peripheral electronic circuits for driving the matrix or for processing the image signals. After formation on a substrate of a stack of conducting layers and insulating layers serving for the production of the matrix of the peripheral circuits, a substantial thickness of insulation is removed only in the region of the matrix before a mosaic of color filters is deposited so as to reduce the height of the filters relative to the photosensitive regions.

Abstract: The invention concerns an integrated circuit amplifier designed to supply an amplified signal at a power of a few hundreds of milliwatts at frequencies from one to several Gigahertz.

Abstract: The invention pertains to a process and to a device for positioning an optical component between two optical fibers furnished at their end with lenses comprising: drilling a support in such a way as to fix therein a capillary tube whose inside diameter is designed to slip an optical fiber thereinto, fixing the capillary tube in the drilling of the support, making a blind cut and of the capillary tube, in such a way as to separate the capillary tube into two parts, a first plane face of the cut being perpendicular to a longitudinal axis of the capillary tube, positioning the component on the first plane face, positioning an optical fiber in each of the parts. The device comprises a support through which is fixed a capillary tube, the support comprising a cut so as to separate the capillary tube into two parts. The cut comprises a first plane face perpendicular to a longitudinal axis of the capillary tube. The component is positioned on the first plane face.

Abstract: The invention relates to a method for making an integrated circuit (40) of the surface-mount type the comprising, first of all, manufacture of a package having a rear face and a pin grid array extending under this rear face perpendicular thereto, and a ball (44) of low melting point alloy is then formed at the end of each pin surrounding this end and soldered thereto. The invention also relates to an integrated circuit (40) of the surface-mount type, comprising a package having a rear face and a pin grid array, of a cross section roughly constant along the pin (42), extending under the rear face perpendicular thereto. A ball (44) of low melting point alloy is soldered to the end of each pin (42) surrounding this end.

Abstract: The invention relates to the making of color image sensors for miniature cameras. The method of fabrication includes the formation on the front face of a semi-conductive wafer of a series of active zones comprising image detection circuits, each corresponding to a respective image sensor. Each active zone is surrounded by input/output pads. The wafer is transferred by its front fact against the front face of a supporting substrate. The major part of the thickness of the semiconductor wafer is eliminated, leaving a very fine semi-conductive layer including the image detection circuits on the substrate. This method is characterized in that firstly, layers of color filters are deposited and then etched on the semi-conductive layer thus thinned.

Abstract: The invention relates to method for making a color image sensor. The method comprises: the formation, on the front face of a semiconductive wafer (10), of a series of active zones (ZA) comprising image detection circuits and each corresponding to a respective image sensor, each active zone being surrounded by input/output pads (22), the transfer of the wafer by its front face against the front face of a temporary supporting substrate (20), the elimination of the major part of the thickness of the silicon wafer, leaving a fine silicon layer (30) on the substrate, this fine silicon layer comprising the image detection circuits.

Abstract: The invention concerns a color image sensor that can be used to make a miniature camera, and a corresponding method for making this sensor. The image sensor comprises a transparent substrate (40) on the upper part of which are superimposed, successively, a mosaic of color filters (18), a very thin silicon layer (30) comprising photosensitive zones, and a stack of conductive layers (14) and insulating layers (16) defining image detection circuits enabling the collection of the electrical charges generated by the illumination of the photosensitive zones through the transparent substrate. The manufacturing method consists in producing the photosensitive circuits on a silicon wafer, transferring said wafer on to a temporary substrate, thinning the wafer down to a thickness of about three to 30 micrometers, depositing color filters on the surface of the remaining silicon layer and transferring the structure to a permanent transparent substrate and eliminating the temporary substrate.

Abstract: An embodiment of the present invention related to fingerprint sensors is described. The sensor comprises an integrated-circuit chip having a sensitive surface, a substrate provided with electrical connections and wire-bonding wires connecting the chip to the electrical connections. The sensor further includes a molded protective resin at least partly covering the substrate and the chip and completely encapsulating the wire-bonding wires. The resin forms, on at least one side of the chip and at most three sides, a bump rising to at least 500 microns above the sensitive surface, this bump encapsulating the wire-bonding wires and constituting a guide for a finger, the fingerprint of which it is desired to detect.

Abstract: A chainable adder receives bits (A, B, C) to give complementary sum outputs (SO, SO*) and carry outputs (CO, CO*). A first stage has differential pairs (P1, P2, P3) receiving bits (A, B, C), respectively, and complements (A*, B*, C*), respectively. The pairs have common output arms and are powered by an identical current (I). First and second output arms include resistors (R1, R2, R3) and (R4, R5, R6), respectively, connected-in-series to a reference potential (M). The resistors define intermediate nodes (A1, A2, A3) in the first arm, (B1, B2, B3) in the second arm. Carry outputs are taken at nodes (A2, B2). A second stage has differential pairs (P4, P5, P6) whose inputs are connected to nodes (A1, B3) for pair (P4), (A2, B2) for pair (P5), and (A3, B1) for pair (P6). Pairs (P4, P6) each have a common arm with the pair (P5) and a non-common arm.

Abstract: In digital signal demodulation and detection circuits, especially digital radio signal reception and processing circuits, the signals are received in analog form and have to be converted into logic levels. This is done in practice by comparing the level of the signal with its mean level. The mean level is established by an RC lowpass filter which introduces an inconvenient delay into the preparation of the mean level. The mean level of the signal, established by an RC filter is compared and applied to an input B of a comparator COMP, at the level of the analog signal delayed by a phase-shifter and applied to another input A of the comparator. In order that the delay introduced by the phase-shifter into the analog signal may be substantially the same as the delay given to the mean value by the RC circuit, the phase-shifter is made with the same RC circuit and an amplifier mounted so as to set up a phase shift transfer function of the (1−RCp)/(1+RCp) type where p is the Laplace variable.

Abstract: A signal aliasing circuit that can be used especially to make a series interpolation cell of an interpolation analog-digital converter comprises two pairs of differential arms powered by one and the same current source connected to a first power supply terminal, each pair comprising two transistors, the transistors of one pair being parallel-connected with the transistors of the other pair. Each group of two parallel-connected transistors is connected by a respective common resistor to a second power supply terminal, the two outputs of the aliasing circuit being the combined collectors of the two groups of parallel-connected transistors. The disclosed device can be applied especially to converters whose architecture comprises what is known as a series interpolation part requiring high precision.