Abstract: A p-channel LDMOS device with a controlled n-type buried layer (NBL) is disclosed. A Shallow Trench Isolation (STI) oxidation is defined, partially or totally covering the drift region length. The NBL layer, which can be defined with the p-well mask, connects to the n-well diffusion, thus providing an evacuation path for electrons generated by impact ionization. High immunity to the Kirk effect is also achieved, resulting in a significantly improved safe-operating-area (SOA). The addition of the NBL deep inside the drift region supports a space-charge depletion region which increases the RESURF effectiveness, thus improving BV. An optimum NBL implanted dose can be set to ensure fully compensated charge balance among n and p doping in the drift region (charge balance conditions). The p-well implanted dose can be further increased to maintain a charge balance, which leads to an Rdson reduction.

Abstract: A microcontroller includes a system bus matrix to connect various modules. The microcontroller also includes direct connections between modules. For example, the microcontroller may include a direct connection between a data processing module and a memory controller module to improve the transfer rate for data that is processed by the data processing module.

Abstract: Various embodiments include an integrated circuit (IC) device having a conductive contact, and a circuit to determine a resistance value of a circuit path between the conductive contact and a circuit node during an initialization mode of the device. The IC device includes a controller to select at least one value of at least one operating parameter of the device based at least in part on the resistance value.

Abstract: A bias current is generated for an unbalanced differential pair that is proportional to the transconductance gain of the differential pair. When the transconductance gain varies (e.g., due to temperature variations), the bias current varies in proportion thereby maintaining a constant offset voltage. In some implementations, a voltage to current converter circuit generates the bias current from a constant reference voltage that is independent of temperature and voltage supply variations (e.g., a bandgap reference voltage).

Abstract: A system includes one or more master modules configured to execute instructions embedded in non-transitory machine-readable media and controllable by a processor. The system also includes one or more peripheral modules that are configured to execute instructions embedded in non-transitory machine-readable media and controllable by the processor. The system also includes a system bus with instructions embedded in a non-transitory machine-readable medium and configured to allow data transfer between the processor and the one or more peripheral modules. A data processing module of the one or more peripheral modules includes a master interface and a slave interface. Both master and slave interfaces are coupled to the system bus.

Abstract: A system includes master modules, at least one multiport slave module, and a scheduler connected by a system bus. The scheduler is configured to provide scheduling information to the multiport slave module. The scheduling information includes master categorization information and anticipated burst information. The anticipated burst information is based on a scheduler determination for an anticipated bus access by an anticipated master module. The master categorization information categorizes the anticipated master.

Abstract: A variable architecture for random number generators is disclosed. In some implementations, the architecture of a random number generator may be varied based on microcontroller-specific data stored on the microcontroller. For example, a random number generator module may be embedded in a microcontroller circuit. The random number generator module may be designed to receive input from data sources in the circuit that contain microcontroller-specific data (e.g., a unique chip identifier, data carried in fuse bits). In some implementations, the architecture of the random number generator module may be adjusted or varied based on the microcontroller-specific data.

Abstract: A subset of software objects stored in a first segment of non-volatile memory are identified as requiring frequent write operations or otherwise associated with a high endurance requirement. The subset of software objects are move to a second segment of non-volatile memory with a high endurance capacity, due to the application of wear leveling techniques to the second segment of non-volatile memory. The first and second segments of memory can be located in the same memory device or different memory devices.

Abstract: A circuit and method of switching an output of a single preamplifier to or from multiple amplifier output stages. The preamplifier output is switched between multiple audio amplifier output stages without degrading the performance of the output signal. A switching circuit selectively couples the preamplifier output to an amplifier output stage and also couples a feedback loop between the selected amplifier output stage and the preamplifier stage.

Abstract: A microcontroller that includes logic to provide a uniform overall power consumption current of parts of the microcontroller generated by sequential element switching is disclosed. For example, the number of sequential elements switching at the triggering edge of the clock is calculated to determine a number of switching elements. The number of switching elements is compared to the number of sequential elements of the circuitry. Additional sequential elements are added in the circuitry and are forced to switch so that the overall number of switching elements equals the number of sequential elements, excluding the additional sequential elements.

Abstract: A p-channel LDMOS device with a controlled n-type buried layer (NBL) is disclosed. A Shallow Trench Isolation (STI) oxidation is defined, partially or totally covering the drift region length. The NBL layer, which can be defined with the p-well mask, connects to the n-well diffusion, thus providing an evacuation path for electrons generated by impact ionization. High immunity to the Kirk effect is also achieved, resulting in a significantly improved safe-operating-area (SOA). The addition of the NBL deep inside the drift region supports a space-charge depletion region which increases the RESURF effectiveness, thus improving BV. An optimum NBL implanted dose can be set to ensure fully compensated charge balance among n and p doping in the drift region (charge balance conditions). The p-well implanted dose can be further increased to maintain a charge balance, which leads to an Rdson reduction.

Abstract: A method for detecting and correcting errors in a memory having a read/write paradigm is presented. In these implementations, various approaches to detect errors on a per word or per group of words basis and correct errors on a per group of words or per page basis, respectively, in relation to a memory and its associated differing read/write operations, are provided. For instance, in one implementation, errors are detected on a per word basis and corrected on a per page basis for a NOR Flash Memory having differing read/write operations of reading on a per word basis and writing on a per page basis. Advantageously, benefits of the various implementations include reduced encoder/decoder complexities, reduced parity overhead requirements, and reduced performance degradation.

Abstract: A bias current is generated for an unbalanced differential pair that is proportional to the transconductance gain of the differential pair. When the transconductance gain varies (e.g., due to temperature variations), the bias current varies in proportion thereby maintaining a constant offset voltage. In some implementations, a voltage to current converter circuit generates the bias current from a constant reference voltage that is independent of temperature and voltage supply variations (e.g., a bandgap reference voltage).

Abstract: A multi-interface integrated circuit (IC) comprises a plurality of transistors, and a level detection block. At least one transistor of the plurality of transistors is in communication with a first terminal and either a first or a second lead of the multi-interface IC, and at least one of the plurality of transistors is in communication with the first terminal, a second terminal and either the first or a second lead of the multi-interface IC. The level detection block is in communication with at least one of the plurality of transistors and the first and second leads.

Abstract: Embodiments of a proportional phase comparator and method for aligning digital signals are generally described herein. In some embodiments, circuitry to align digital signals comprises a proportional phase comparator that generates triangular-shaped pulses for application to a charge pump. The triangular-shaped pulses may reduce an amount of charge injection in the charge pump close to convergence.

Abstract: The present invention is related to a metal-oxide semiconductor field-effect transistor (MOSFET) having a symmetrical layout such that the resistance between drains and sources is reduced, thereby reducing power dissipation. Drain pads, source pads, and gates are placed on the MOSFET such that the distances between drains, sources, and gates are optimized to reduce resistance and power dissipation. The gates may be arranged in a trapezoidal arrangement in order to maximize a ratio of the gate widths to gate lengths for current driving while reducing resistance and power dissipation.

Abstract: A memory controller is configured to receive read requests from a processor and return memory words from memory. The memory controller comprises an address comparator and a loop entry cache. The address comparator is configured to determine a difference between a previous read request address and a current read request address. The address comparator is also configured to determine whether the difference is positive and less than a certain address difference and, if so, indicate a limited backwards jump. The loop entry cache is configured to store a current memory word for the current read request address when the address comparator indicates a limited backwards jump.

Abstract: A method for detecting and correcting errors in a memory having a read/write paradigm is presented. In these implementations, various approaches to detect errors on a per word or per group of words basis and correct errors on a per group of words or per page basis, respectively, in relation to a memory and its associated differing read/write operations, are provided. For instance, in one implementation, errors are detected on a per word basis and corrected on a per page basis for a NOR Flash Memory having differing read/write operations of reading on a per word basis and writing on a per page basis. Advantageously, benefits of the various implementations include reduced encoder/decoder complexities, reduced parity overhead requirements, and reduced performance degradation.

Abstract: A modular multiplication method implemented in an electronic digital processing system takes advantage of the case where one of the operands W is known in advance or used multiple times with different second operands V to speed calculation. The operands V and W and the modulus M may be integers or polynomials over a variable X. A possible choice for the type of polynomials can be polynomials of the binary finite field GF(2N). Once operand W is loaded into a data storage location, a value P=?W·Xn+?/M? is pre-computed by the processing system. Then when a second operand V is loaded, the quotient q^ for the product V·W being reduced modulo M is quickly estimated, q^=?V·P/Xn+??, optionally randomized, q?=q^?E, and can be used to obtain the remainder r?=V·W?q?·M, which is congruent to (V·M) mod M. A final reduction can be carried out, and the later steps repeated with other second operands V.

Abstract: A technique that minimizes false triggering of an electrostatic discharge (ESD) protection circuit is disclosed. In an embodiment, the resistor-capacitor (RC) time constant of an ESD trigger element is reduced during normal operation minimizing the risk of false triggering. Circuit layout area is saved without the need of a timeout circuit associated with releasing a device maintaining a trigger state (i.e., a trigger latch). A RC time constant for triggering is set in an operational context according to conditions of usage and desired application of the ESD protection circuit.