Patents Assigned to Atomic Energy Council Institute of Nuclear Energy Research
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Publication number: 20080005959Abstract: A wild seaweed, like sea lettuce, is picked and germ cells are released from the seaweed. The germ cells then obtain adherence and are sprouted into youngs of the seaweed so that the seaweed can be cultivated artificially and productively and can be supplied as a material for biomass energy.Type: ApplicationFiled: July 5, 2006Publication date: January 10, 2008Applicant: ATOMIC ENERGY COUNCIL-INSTITUTE OF NUCLEAR ENERGY RESEARCHInventors: Chia-Chieh Chen, Yean-Chang Chen, Kuan-Yin Chen, Hsueh-Hsuan Liu, Bin Lin, Meng-Chou Lee, Ming-Chao Ku, Wen-Song Hwang, Ying-Kai Fu, Wuu-Jyh Lin, Lie-Hang Shen
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Publication number: 20070286802Abstract: The present invention is to invent a novel method for testing the radiochemical purity of Tc-99m-TRODAT-1 through a high performance liquid chromatography on a widely available C-18 column.Type: ApplicationFiled: June 8, 2006Publication date: December 13, 2007Applicant: ATOMIC ENERGY COUNCIL-INSTITUTE OF NUCLEAR ENERGY RESEARCHInventors: Yu-Chin Tseng, Yuen-Han Yeh, Mei-Chih Wu, Lie-Hang Shen
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Publication number: 20070286942Abstract: A biomedical material is prepared through a plasma method. The material is a film containing titanium oxide onto polymer sheet. The film is hydrophilic, bacterial inactivated and biocompatible. The present invention can be applied to artificial guiding tube and wound dressing material.Type: ApplicationFiled: October 26, 2006Publication date: December 13, 2007Applicant: ATOMIC ENERGY COUNCIL-INSTITUTE OF NUCLEAR ENERGY RESEARCHInventors: Te-Hsing Wu, Ko-Shao Chen, Chia-Chieh Chen, Lie-Hang Shen, Yi-Chun Yeh, Nini-Chen Tsai
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Publication number: 20070259434Abstract: An analysis over a radiochemical material is done by using a thin layer chromatography. Consequently, a radiochemical purity of a sample is figured out in a short time through a easy steps.Type: ApplicationFiled: May 5, 2006Publication date: November 8, 2007Applicant: Atomic energy Council-Institute of Nuclear Energy ResearchInventors: Chien-Chung Hsia, Lie-Hang Shen
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Publication number: 20070223644Abstract: Usually an analysis of fuel displacement accident is required before operating a reactor. In the present invention, fuel displacement accident is analyzed by linearly combining calculation results of single displacement layouts and a calculation result of a default placement layout. In this way, a number of displacement combinations to be analyzed can be reduced. And, thus, time for the analysis is saved and safety of the reactor core can be affirmed.Type: ApplicationFiled: July 21, 2006Publication date: September 27, 2007Applicant: ATOMIC ENERGY COUNCIL-INSTITUTE OF NUCLEAR ENERGY RESEARCHInventors: Weng-Sheng Kuo, Jenq-Horng Liang, Chung-Hsing Hu, Chi-Ho Fang, Wu-Hsiung Tung
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Patent number: 7271021Abstract: A light emitting device includes a substrate, an epitaxial structure positioned on the substrate, an ohmic contact electrode positioned on the epitaxial structure and a current blocking structure positioned in the epitaxial structure. The epitaxial structure includes a bottom cladding layer, an upper cladding layer, a light-emitting layer positioned between the bottom and the upper cladding layer, a window layer positioned on the upper cladding layer and a contact layer positioned on the window layer. The current blocking structure can extend from the bottom surface of the ohmic contact electrode to the light-emitting layer. According to the present invention, at least one ionic implanting process is performed to implant at least one proton beam into the epitaxial structure to form the current blocking structure.Type: GrantFiled: September 28, 2005Date of Patent: September 18, 2007Assignee: Atomic Energy Council-Institute of Nuclear Energy ResearchInventors: Tsun-Neng Yang, Shan-Ming Lan
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Publication number: 20070207561Abstract: The present invention is a photosensitized electrode which absorbs sun light to obtain pairs of separated electron and hole. The photosensitized electrode is fabricated with simple procedure and has low cost. The electrode has excellent chemical resistance and is fitted to be applied in a solar cell device with enhanced sun-light absorbing ability. The present invention can be applied in an optoelectronic device or a hydrogen generator device too.Type: ApplicationFiled: July 28, 2006Publication date: September 6, 2007Applicant: ATOMIC ENERGY COUNCIL-INSTITUTE OF NUCLEAR ENERGY RESEARCHInventors: Ming-Chang Lin, Yen-Chang Tzeng, Shan-Ming Lan, Yuan-Pern Lee, Wei-Guang Diau, Tsong-Yang Wei, Jyh-Perng Chiu, Li-Fu Lin, Der-Jhy Shieh, Ming-Chao Kuo
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Publication number: 20070095385Abstract: The photovoltaic concentrating apparatus includes a supporter and at least one collecting unit positioned on the supporter. The supporter includes a plurality of beams having at least one groove positioned on a side surface of the beam. The collecting unit includes a Fresnel lens and a solar cell module. The Fresnel lens is positioned on the supporter via a loading frame with a wing capable of engaging with the groove of the beam, and the solar cell module is positioned on the supporter via a substrate. Particularly, the supporter includes an upper frame for supporting the Fresnel lens and a bottom frame for supporting the solar cell module.Type: ApplicationFiled: January 6, 2006Publication date: May 3, 2007Applicant: ATOMIC ENERGY COUNCIL - INSTITUTE OF NUCLEAR ENERGY RESEARCHInventors: Hwa Shin, Hwen Hong, Chieh Cheng, Hung Chiu, Yen Tzeng
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Publication number: 20070080338Abstract: The present infra-red light-emitting device includes a substrate with a first window layer, a silicon dioxide layer positioned on the first window layer, silicon nanocrystals distributed in the silicon dioxide layer, a second window layer, a transparent conductive layer and a first ohmic contact electrode positioned in sequence on the silicon dioxide layer, and a second ohmic contact electrode positioned on the bottom surface of the substrate. The present method forms a sub-stoichiometric silica (SiOx) layer on a substrate, wherein the numerical ratio (x) of oxygen atoms to silicon atoms is smaller than 2. A thermal treating process is then performed in a nitrogen or argon atmosphere to transform the SiOx layer into a silicon dioxide layer with a plurality of silicon nanocrystals distributed therein. The thickness of the silicon dioxide layer is between 1 and 10,000 nanometers, and the diameter of the silicon nanocrystal is between 4 and 8 nanometers.Type: ApplicationFiled: December 12, 2006Publication date: April 12, 2007Applicant: ATOMIC ENERGY COUNCIL - INSTITUTE OF NUCLEAR ENERGY RESEARCHInventors: Tsun Neng Yang, Shan Lan
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Publication number: 20070044833Abstract: The present solar energy collector includes a substrate and a plurality of plates assembled on the substrate in a roof manner, wherein the plates include a plurality of protrusions capable of collecting a penetrating solar ray on a solar cell positioned at a predetermined region on the substrate. The solar energy collector may include two trapezoid plates and two triangular plates assembled on the substrate in an inclined manner to form a hip-roof. The solar energy collector may include four trapezoid plates positioned on the substrate in an inclined manner and one rectangular plate positioned on the trapezoid plates to form a mansard roof. The solar energy collector may include six first rectangular plates positioned on the substrate in a hexagonal manner, six second rectangular plates positioned on the first rectangular plates, and a hexagonal plate positioned on the second rectangular plates.Type: ApplicationFiled: December 23, 2005Publication date: March 1, 2007Applicant: ATOMIC ENERGY COUNCIL - INSTITUTE OF NUCLEAR ENERGY RESEARCHInventors: Jyh Chern, Yen Tzeng, Hwen Fen Hong, Jain Chen, Chia Hu, Hung Kuo, Hwa Shin
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Patent number: 7163902Abstract: The present infra-red light-emitting device includes a substrate with a first window layer, a silicon dioxide layer positioned on the first window layer, silicon nanocrystals distributed in the silicon dioxide layer, a second window layer, a transparent conductive layer and a first ohmic contact electrode positioned in sequence on the silicon dioxide layer, and a second ohmic contact electrode positioned on the bottom surface of the substrate. The present method forms a sub-stoichiometric silica (SiOx) layer on a substrate, wherein the numerical ratio (x) of oxygen atoms to silicon atoms is smaller than 2. A thermal treating process is then performed in a nitrogen or argon atmosphere to transform the SiOx layer into a silicon dioxide layer with a plurality of silicon nanocrystals distributed therein. The thickness of the silicon dioxide layer is between 1 and 10,000 nanometers, and the diameter of the silicon nanocrystal is between 4 and 8 nanometers.Type: GrantFiled: August 25, 2004Date of Patent: January 16, 2007Assignee: Atomic Energy Council-Institute of Nuclear Energy ResearchInventors: Tsun Neng Yang, Shan Ming Lan
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Patent number: 7115427Abstract: The present red light-emitting device includes a substrate with a first window layer, a silicon dioxide layer positioned on the first window layer, a plurality of silicon nanocrystals distributed in the silicon dioxide layer, a second window layer, a transparent conductive layer and a first ohmic contact electrode positioned in sequence on the silicon dioxide layer, and a second ohmic contact electrode positioned on the bottom surface of the substrate. The present method forms a sub-stoichiometric silica (SiOx) layer on a substrate, wherein the numerical ratio (x) of oxygen atoms to silicon atoms is smaller than 2. A thermal treating process is then performed in an oxygen atmosphere to transform the SiOx layer into a silicon dioxide layer with a plurality of silicon nanocrystals distributed therein. The thickness of the silicon dioxide layer is between 1 and 10,000 nanometers, and the diameter of the silicon nanocrystal is between 3 and 5 nanometers.Type: GrantFiled: August 25, 2004Date of Patent: October 3, 2006Assignee: Atomic Energy Council - Institute of Nuclear Energy ResearchInventors: Tsun Neng Yang, Shan Ming Lan
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Patent number: 7100631Abstract: The present invention is to provide a kind of multifunction passive and continuous fluid feeding system for external systems, the fluid-feed system including a storing and transmitting component, a measuring and regulating component, and a control unit characterized by: pressurizing from above fluid level surface of the feed fluid tank by high-pressure gas supply source to fulfill the passive fluid feeding function, performing the feed fluid measuring and regulating through the flow meter and flow control valve installed on the transmission pipe lines connecting to the external systems, fulfilling function of continuous fluid feeding by switching between two fluid-feed tanks, and combining the feed fluid requirements of the external systems through the control unit to achieve the multifunction fluid-feed art of automatic operation, continuous fluid feeding, and flow rate controlling.Type: GrantFiled: November 6, 2002Date of Patent: September 5, 2006Assignee: Atomic Energy Council-Institute of Nuclear Energy ResearchInventors: Tay-Jian Liu, Chien-Hsiung Lee, Yea-Kuang Chan
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Patent number: 7075113Abstract: A light-emitting device and method for fabricating the same are revealed. The light-emitting device includes an epitaxial structure, a P-type ohmic contact electrode and an N-type ohmic contact electrode. The epitaxial structure includes a plurality of epitaxial layers capable of emitting light and P-type contact layer. The P-type ohmic contact electrode includes a first nickel layer deposited on the epitaxial structure, a first platinum layer deposited on the first nickel layer, and a first gold layer deposited on the first platinum layer. According to the fabricating method of the light-emitting device, an epitaxial structure is first formed on the surface of a substrate, a P-type ohmic contact electrode is then formed on the epitaxial structure, and an N-type ohmic contact electrode is formed on the other surface of the substrate. Finally, an annealing process is performed at a temperature between 220° C. and 330° C.Type: GrantFiled: November 7, 2003Date of Patent: July 11, 2006Assignee: Atomic Energy Council Institute of Nuclear Energy ResearchInventor: Chih-Hung Wu
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Publication number: 20060043383Abstract: The present red light-emitting device includes a substrate with a first window layer, a silicon dioxide layer positioned on the first window layer, a plurality of silicon nanocrystals distributed in the silicon dioxide layer, a second window layer, a transparent conductive layer and a first ohmic contact electrode positioned in sequence on the silicon dioxide layer, and a second ohmic contact electrode positioned on the bottom surface of the substrate. The present method forms a sub-stoichiometric silica (SiOx) layer on a substrate, wherein the numerical ratio (x) of oxygen atoms to silicon atoms is smaller than 2. A thermal treating process is then performed in an oxygen atmosphere to transform the SiOx layer into a silicon dioxide layer with a plurality of silicon nanocrystals distributed therein. The thickness of the silicon dioxide layer is between 1 and 10,000 nanometers, and the diameter of the silicon nanocrystal is between 3 and 5 nanometers.Type: ApplicationFiled: August 25, 2004Publication date: March 2, 2006Applicant: ATOMIC ENERGY COUNCIL - INSTITUTE OF NUCLEAR ENERGY RESEARCHInventors: Tsun Yang, Shan Lan
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Publication number: 20060043884Abstract: The present white light-emitting device includes a substrate with first window layer, a trisilicon tetranitride layer positioned on the first window layer, a plurality of silicon nanocrystals distributed in the trisilicon tetranitride layer, a second window layer, a transparent conductive layer and a first ohmic contact electrode positioned in sequence on the trisilicon tetranitride layer, and a second ohmic contact electrode positioned on the bottom surface of the substrate. The present method first forms a sub-stoichiometric silicon nitride (SiNx) layer on a substrate, wherein the numerical ratio (x) of nitrogen atoms to silicon atoms is smaller than 4/3. A thermal treating process is then performed to transform the sub-stoichiometric SiNx layer into a trisilicon tetranitride layer with a plurality of silicon nanocrystals distributed therein. The thickness of the trisilicon tetranitride layer is between 1 and 10,000 nanometers, and the diameter of the silicon nanocrystal is between 1 and 10 nanometers.Type: ApplicationFiled: August 25, 2004Publication date: March 2, 2006Applicant: ATOMIC ENERGY COUNCIL - INSTITUTE OF NUCLEAR ENERGY RESEARCHInventors: Tsun Yang, Shan Lan
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Publication number: 20060043397Abstract: The present infra-red light-emitting device includes a substrate with a first window layer, a silicon dioxide layer positioned on the first window layer, silicon nanocrystals distributed in the silicon dioxide layer, a second window layer, a transparent conductive layer and a first ohmic contact electrode positioned in sequence on the silicon dioxide layer, and a second ohmic contact electrode positioned on the bottom surface of the substrate. The present method forms a sub-stoichiometric silica (SiOx) layer on a substrate, wherein the numerical ratio (x) of oxygen atoms to silicon atoms is smaller than 2. A thermal treating process is then performed in a nitrogen or argon atmosphere to transform the SiOx layer into a silicon dioxide layer with a plurality of silicon nanocrystals distributed therein. The thickness of the silicon dioxide layer is between 1 and 10,000 nanometers, and the diameter of the silicon nanocrystal is between 4 and 8 nanometers.Type: ApplicationFiled: August 25, 2004Publication date: March 2, 2006Applicant: ATOMIC ENERGY COUNCIL-INSTITUTE OF NUCLEAR ENERGY RESEARCHInventors: Tsun Yang, Shan Lan
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Publication number: 20060022222Abstract: A light emitting device includes a substrate, an epitaxial structure positioned on the substrate, an ohmic contact electrode positioned on the epitaxial structure and a current blocking structure positioned in the epitaxial structure. The epitaxial structure includes a bottom cladding layer, an upper cladding layer, a light-emitting layer positioned between the bottom and the upper cladding layer, a window layer positioned on the upper cladding layer and a contact layer positioned on the window layer. The current blocking structure can extend from the bottom surface of the ohmic contact electrode to the light-emitting layer. According to the present invention, at least one ionic implanting process is performed to implant at least one proton beam into the epitaxial structure to form the current blocking structure.Type: ApplicationFiled: September 28, 2005Publication date: February 2, 2006Applicant: ATOMIC ENERGY COUNCIL - INSTITUTE OF NUCLEAR ENERGY RESEARCHInventors: Tsun-Neng Yang, Shan-Ming Lan
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Patent number: 6933511Abstract: An ion implanting apparatus of has a wafer cassette capable of loading a plurality of wafers, an implanting chamber including an implanting base, a cassette-transferring module for moving the wafer cassette, and a wafer-transferring module for moving the wafer from the wafer cassette to the implanting base. The wafer cassette has a plurality of irradiation trays for loading the wafer, while the implanting base has a guiding slot for guiding the irradiation tray. The cassette-transferring module includes a rack positioned on the wafer cassette, a gear for moving the wafer cassette by driving the rack through rotating, and a first stepping motor for driving the gear. The wafer-transferring module has a push plate for moving the irradiation tray from the wafer cassette to the implanting base, and a second stepping motor for driving the push plate.Type: GrantFiled: November 18, 2003Date of Patent: August 23, 2005Assignee: Atomic Energy Council Institute of Nuclear Energy ResearchInventors: Tsun-Neng Yang, Tai-Cheng Gunng, Wei-Yang Ma, Yu-Tang Yang, Ming-Ruesy Tsai, Kao-Chi Lan
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Publication number: 20050104012Abstract: The ion implanting apparatus of the present invention comprises a wafer cassette capable of loading a plurality of wafers, an implanting chamber including an implanting base, a cassette-transferring module for moving the wafer cassette, and a wafer-transferring module for moving the wafer from the wafer cassette to the implanting base. The wafer cassette comprises a plurality of irradiation tray for loading the wafer, while the implanting base comprises a guiding slot for guiding the irradiation tray. The cassette-transferring module comprises a rack positioned on the wafer cassette, a gear for moving the wafer cassette by driving the rack through rotating, and a first stepping motor for driving the gear. The wafer-transferring module comprises a push plate for moving the irradiation tray from the wafer cassette to the implanting base, and a second stepping motor for driving the push plate.Type: ApplicationFiled: November 18, 2003Publication date: May 19, 2005Applicant: ATOMIC ENERGY COUNCIL - INSTITUTE OF NUCLEAR ENERGY RESEARCHInventors: Tsun-Neng Yang, Tai-Cheng Gunng, Wei-Yang Ma, Yu-Tang Yang, Ming-Ruesy Tsai, Kao-Chi Lan