Abstract: An acoustic device includes a transducer formed on a first surface of a substrate and an acoustic horn formed in the substrate by a dry-etching process through an opposing second surface of the substrate. The acoustic horn is positioned to amplify sound waves from the transducer and defines a non-linear cross-sectional profile.

Abstract: An amplifier having an operating frequency includes: an input port and an output port; three gain elements, each having an input terminal and an output terminal; an input matching network; and an output matching network. The input matching network includes: a first microstrip line which is connected to the input port and is an inductor at the operating frequency; a second microstrip line extending between the input terminals of the three gain elements; and a first split shunt capacitor connecting the first microstrip line to the second microstrip line. The output matching network includes: a third microstrip line which is connected to the output port and is an inductor at the operating frequency; a fourth microstrip line extending between the output terminals of the three gain elements; and a second split shunt capacitor connecting the third microstrip line to the fourth microstrip line.

Abstract: In accordance with a representative embodiment, a BAW resonator structure comprises: a first BAW resonator comprising a first lower electrode, a first upper electrode and a first piezoelectric layer disposed between the first lower electrode and the first upper electrode; and a second BAW resonator comprising a second lower electrode, a second upper electrode and a second piezoelectric layer disposed between the second lower electrode and the second upper electrode. The BAW resonator structure also comprises a single-material acoustic coupling layer disposed between the first and second BAW resonators. The single-material acoustic coupling layer comprises an inhomogeneous acoustic property across a thickness of the single-material acoustic coupling layer.

Abstract: A device includes a first wafer, a second wafer, a gasket bonding the first wafer to the second wafer to define a cavity between the first wafer and the second wafer, and an acoustic transducer disposed on the first wafer and disposed within the cavity between the first wafer and the second wafer. One or more apertures are provided for communicating an acoustic signal between the acoustic transducer and an exterior of the device. An aperture may be formed in the cavity itself, or the cavity may be hermetically sealed. An aperture may be formed completely through the first wafer and located directly beneath at least a portion of the acoustic transducer.

Abstract: A switching device has an input node, an output node, and a control node. The device includes: a substrate having a first side and a second side with a ground plane on the first side of the substrate and a mesa on the second side of the substrate. The mesa is made of a normally-conductive semiconductor material, and an isolation region substantially surrounds the mesa. A field effect transistor (FET) is on the mesa. The FET has an input terminal connected to the input node, an output terminal connected to the output node, and a gate. A capacitor is connected in series between the output terminal of the FET and the gate, and a resistor is connected in series between the control node and the gate. A gate electrode is directly connected to the gate. The gate electrode is disposed substantially entirely on the mesa.

Abstract: A semiconductor device includes a semiconductor substrate formed from compound semiconductor material and multiple conductive connecting pads. The connecting pads are symmetrically arranged on a first surface of the semiconductor substrate in an interweaving pattern. Each cleavage plane extending across the first surface of the semiconductor substrate intersects a portion of at least one connecting pad of the plurality of connecting pads.

Abstract: An apparatus includes: a first multiplexer configured to allow bi-directional communication over a first plurality of multiplexed communication bands that each include a corresponding transmit band and a corresponding receive band, wherein none of the transmit bands of the first multiplexer have transmit frequencies that overlap with any receive frequencies of any of the receive bands of the first multiplexer; a second multiplexer configured to allow bi-directional communication over a second plurality of multiplexed communication bands that each include a corresponding transmit band and a corresponding receive band, wherein none of the transmit bands of the second multiplexer have transmit frequencies that overlap with any receive frequencies of any of the receive bands of the second multiplexer; and an electromechanical band switch configured to selectively connect the first and second multiplexers to a common antenna.

Abstract: A device, for transmitting or receiving ultrasonic signals, includes a transducer and an acoustic horn. The transducer is configured to convert between electrical energy and the ultrasonic signals, and may be a micro electro-mechanical system (MEMS) transducer. The acoustic horn is coupled to the transducer, and includes multiple apertures through which the ultrasonic signals are transmitted or received in order to manipulate at least one of a radiation pattern, frequency response or magnitude of the ultrasonic signals. The multiple apertures have different sizes.

Abstract: An acoustic mirror of alternately arranged layers of high and low acoustic impedances is manufactured in that a basic material having a first layer of the layer sequence is initially provided, on which a second layer of the layer sequence is created on the first layer such that the second layer of the layer sequence partially covers the first layer. Subsequently, a planarization layer is applied onto the layer sequence, and the planarization layer is removed in an area which in the common layer plane projects laterally beyond the second layer so as to result in a residual planarization layer. Finally, a termination layer is applied onto the layer sequence and the residual planarization layer.

Abstract: An apparatus comprises a first transducer support configured to receive a first transducer in a first opening. A face of the first face of the transducer is located in a first plane. The apparatus also comprises a second transducer support configured to receive a second transducer in a second opening. A face of the second transducer is located in a second plane substantially parallel to the first plane.

Abstract: A bulk acoustic wave (BAW) filter device includes a first port, a second port, a first coupled resonator filter stage, a second coupled resonator filter stage and a filter section. The first coupled resonator filter stage includes a first BAW resonator connected to the first port and a second BAW resonator acoustically coupled to the first BAW resonator. The second coupled resonator filter stage includes a third BAW resonator connected to the second port and a fourth BAW resonator acoustically coupled to the third BAW resonator. The filter section includes a fifth BAW resonator, the fifth BAW resonator connected between the second BAW resonator and the fourth BAW resonator.

Abstract: A bulk acoustic wave (BAW) structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode, and a second electrode disposed over the first piezoelectric layer. A bridge is formed within the piezoelectric layer, where the bridge is surrounded by piezoelectric material of the piezoelectric layer.

Abstract: A film bulk acoustic resonator (FBAR) structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode, and a second electrode disposed over the first piezoelectric layer. A bridge is disposed between the first electrode and the piezoelectric layer.

Abstract: In accordance with a representative embodiment, a bulk acoustic wave (BAW) resonator structure, comprises: a first BAW resonator comprising a first lower electrode, a first upper electrode and a first piezoelectric layer disposed between the first lower electrode and the first upper electrode; a second BAW resonator comprising a second lower electrode, a second upper electrode and a second piezoelectric layer disposed between the second lower electrode and the second upper electrode; an acoustic coupling layer disposed between the first BAW resonator and the second BAW resonator; and a bridge disposed between the first lower electrode of the first BAW resonator and the second upper electrode of the second BAW resonator.

Abstract: In accordance with a representative embodiment, a bulk acoustic wave (BAW) resonator structure, comprises: a first electrode disposed over a substrate; a first piezoelectric layer disposed over the first electrode; a second electrode disposed over the first piezoelectric layer; a second piezoelectric layer disposed over the second electrode; a third electrode disposed over the second piezoelectric layer; and a bridge disposed between the first electrode and the third electrode.

Abstract: In a representative embodiment, a bulk acoustic wave (BAW) resonator comprises: a cavity provided in a first layer and having a perimeter bordering an active region of the BAW resonator; a distributed Bragg reflector (DBR) bordering the cavity, wherein the first layer is one of the layers of the DBR; a first electrode disposed over the substrate; a first piezoelectric layer disposed over the first electrode; a second electrode disposed over the first piezoelectric layer; a second piezoelectric layer disposed over the second electrode; a third electrode disposed over the second piezoelectric layer; and a bridge disposed between the first electrode and the third electrode.

Abstract: In accordance with a representative embodiment, a bulk acoustic wave (BAW) resonator structure, comprises: a first BAW resonator comprising a first lower electrode, a first upper electrode and a first piezoelectric layer disposed between the first lower electrode and the first upper electrode; a second BAW resonator comprising a second lower electrode, a second upper electrode and a second piezoelectric layer disposed between the second lower electrode and the second upper electrode; an acoustic coupling layer disposed between the first BAW resonator and the second BAW resonator; and a bridge disposed between the first lower electrode of the first BAW resonator and the second upper electrode of the second BAW resonator. An inner raised region or an outer raised region, or both are disposed over the second upper electrode.

Abstract: An acoustic resonator comprises a first electrode a second electrode and a piezoelectric layer disposed between the first and second electrodes. The acoustic resonator further comprises a reflective element disposed beneath the first electrode, the second electrode and the piezoelectric layer. An overlap of the reflective element, the first electrode, the second electrode and the piezoelectric layer comprises an active area of the acoustic resonator. The acoustic resonator also comprises a bridge adjacent to a termination of the active area of the acoustic resonator.

Abstract: An acoustic resonator comprises a first electrode a second electrode and a piezoelectric layer disposed between the first and second electrodes. The acoustic resonator further comprises a reflective element disposed beneath the first electrode, the second electrode and the piezoelectric layer. An overlap of the reflective element, the first electrode, the second electrode and the piezoelectric layer comprises an active area of the acoustic resonator. The acoustic resonator also comprises a bridge adjacent to a termination of the active area of the acoustic resonator.

Abstract: An AC-DC converter, comprises: a first capacitor and a second capacitor; and a rectifier circuit connected to the first and second capacitor and operative to charge both the first and the second capacitor and to discharge the first capacitor independently of the second capacitor. The AC-DC converter circuit provides a rectified output voltage, and a duration of time that a current is drawn from the second capacitor is less than approximately 25% of a period of the rectified output voltage.