Abstract: A packaged semiconductor device includes one or more semiconductor dies with at least one MRAM die; a package substrate having first and second planar surfaces that are substantially larger than planar surfaces of the semiconductor dies, the first planar surface of the package substrate being disposed adjacent to the semiconductor dies and including a plurality of package bond pads that are electrically connected to the semiconductor dies, the second planar surface of the package substrate including a plurality of solder bumps electrically connected to the package bond pads; and a soft magnetic cap confronting the semiconductor dies and having an edge that extends toward and attaches to the package substrate, thereby encapsulating the semiconductor dies. The package substrate includes first and second outer conductive layers and a soft magnetic layer interposed between and separated from the first and second outer conductive layers by first and second insulating layers.

Abstract: The present invention is directed to a perpendicular magnetic structure including a seed layer structure that includes a first seed layer comprising a metal element and oxygen; a second seed layer formed on top of the first seed layer and comprising cobalt, iron, and boron; and a third seed layer formed on top of the second seed layer and comprising chromium. The metal element is one of titanium, tantalum, or magnesium. The perpendicular magnetic structure further includes a magnetic fixed layer structure formed on top of the seed layer structure and having an invariable magnetization direction substantially perpendicular to a layer plane of the magnetic fixed layer structure. The magnetic fixed layer structure includes layers of a magnetic material interleaved with layers of a transition metal. The magnetic material includes cobalt. The transition metal is one of nickel, platinum, palladium, or iridium.

Abstract: A magnetic memory element including first and second magnetic free layers having a variable magnetization direction substantially perpendicular to layer planes thereof; a first perpendicular enhancement layer (PEL) interposed between the first and second magnetic free layers; first and second magnetic reference layers having a first invariable magnetization direction substantially perpendicular to layer planes thereof; a second PEL interposed between the first and second magnetic reference layers; an insulating tunnel junction layer formed between the first magnetic free layer and reference layer; an anti-ferromagnetic coupling layer formed adjacent to the second magnetic reference layer; a magnetic fixed layer formed adjacent to the anti-ferromagnetic coupling layer and having a second invariable magnetization direction substantially opposite to the first invariable magnetization direction; a non-magnetic layer comprising oxygen and a transition metal and formed adjacent to the second magnetic free layer; an

Abstract: The present invention is directed to a nonvolatile memory device that includes one or more memory sectors and a read circuit for sensing the resistance state of a magnetic memory cell in the memory sectors. The read circuit includes first and second input nodes; a sense amplifier having first and second input terminals; a reference resistor connected to the first input node at one end and the first input terminal at the other end; a multiplexer having a first input, a second input, and an output, with the first input being connected to the second input node and the output being connected to the second input terminal; a first target resistor and an offset resistor connected in series between the second input node and the second input; and first and second current sources connected to the first and second input terminals, respectively.

Abstract: The present invention is directed to a magnetic memory cell including a magnetic tunnel junction (MTJ) memory element and a two-terminal bidirectional selector coupled in series between two conductive lines. The MTJ memory element includes a magnetic free layer; a magnetic reference layer; and an insulating tunnel junction layer interposed therebetween. The two-terminal bidirectional selector includes a bottom electrode; a top electrode; a load-resistance layer interposed between the bottom and top electrodes and comprising a first tantalum oxide; a first volatile switching layer interposed between the bottom and top electrodes and comprising a metal dopant and a second tantalum oxide that has a higher oxygen content than the first tantalum oxide; and a second volatile switching layer in contact with the first volatile switching layer and comprising a third tantalum oxide that has a higher oxygen content than the first tantalum oxide.

Abstract: The present invention is directed to a perpendicular magnetic structure including a seed layer structure that includes a first seed layer comprising a metal element and oxygen, and a second seed layer formed on top of the first seed layer and comprising chromium. The metal element is one of titanium, tantalum, or magnesium. The perpendicular magnetic structure further includes a magnetic fixed layer structure formed on top of the seed layer structure and having an invariable magnetization direction substantially perpendicular to a layer plane of the magnetic fixed layer structure. The magnetic fixed layer structure includes layers of a magnetic material interleaved with layers of a transition metal. The magnetic material includes cobalt. The transition metal is one of nickel, platinum, palladium, or iridium.

Abstract: The present invention is directed to a magnetic memory element including a magnetic free layer structure incorporating two magnetic free layers separated by a perpendicular enhancement layer (PEL) and having a variable magnetization direction substantially perpendicular to layer planes thereof; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure; a magnetic reference layer structure formed adjacent to the insulating tunnel junction layer opposite the magnetic free layer structure; an anti-ferromagnetic coupling layer formed adjacent to the magnetic reference layer structure; and a magnetic fixed layer formed adjacent to the anti-ferromagnetic coupling layer. The magnetic reference layer structure includes first, second, and third magnetic reference layers separated by two PELs and having a first invariable magnetization direction substantially perpendicular to layer planes thereof.

Abstract: A spin-transfer torque magnetic random access memory (STTMRAM) element employed to store a state based on the magnetic orientation of a free layer, the STTMRAM element is made of a first perpendicular free layer (PFL) including a first perpendicular enhancement layer (PEL). The first PFL is formed on top of a seed layer. The STTMRAM element further includes a barrier layer formed on top of the first PFL and a second perpendicular reference layer (PRL) that has a second PEL. The second PRL is formed on top of the barrier layer. The STTMRAM element further includes a capping layer that is formed on top of the second PRL.

Abstract: The present invention is directed to a nonvolatile memory device including a plurality of memory cells arranged in rows and columns, a plurality of word lines with each connected to a respective row of the memory cells along a row direction, a plurality of bit lines with each connected to a respective column of the memory cells along a column direction; a column decoder connected to the bit lines; a plurality of sense amplifiers connected to the column decoder; and a plurality of sense amplifier control circuits. Each of the sense amplifiers is connected to a unique one of the sense amplifier control circuits. Each of the sense amplifier control circuits includes a current detector circuit for detecting a sensing current, a current booster circuit for boosting the sensing current, and a timer circuit for providing a delayed trigger for a respective one of the sense amplifiers connected thereto.

Abstract: The present invention is directed to a magnetic memory cell including a magnetic tunnel junction (MTJ) memory element and a two-terminal bidirectional selector coupled in series between two conductive lines. The MTJ memory element includes a magnetic free layer, a magnetic reference layer, and an insulating tunnel junction layer interposed therebetween. The two-terminal bidirectional selector includes bottom and top electrodes, first and third volatile switching layers interposed between the bottom and top electrodes, and a second volatile switching layer interposed between the first and third volatile switching layers. The bottom and top electrodes each independently include one of titanium nitride or iridium. The first and third volatile switching layers each include tantalum oxide and silver. The second volatile switching layer includes hafnium oxide and has a higher electrical resistance than the first and third volatile switching layers.

Abstract: The present invention is directed to a magnetic memory element including a magnetic free layer structure incorporating three magnetic free layers separated by two perpendicular enhancement layers (PELs) and having a variable magnetization direction substantially perpendicular to layer planes thereof; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure; a first magnetic reference layer formed adjacent to the insulating tunnel junction layer opposite the magnetic free layer structure; a second magnetic reference layer separated from the first magnetic reference layer by a third perpendicular enhancement layer; an anti-ferromagnetic coupling layer formed adjacent to the second magnetic reference layer; and a magnetic fixed layer formed adjacent to the anti-ferromagnetic coupling layer. The first and second magnetic reference layers have a first invariable magnetization direction substantially perpendicular to layer planes thereof.

Abstract: The present invention is directed to a perpendicular magnetic structure comprising a first seed layer including tantalum, a second seed layer deposited on top of the first seed layer and including iridium, a third seed layer deposited on top of the second seed layer, and a fourth seed layer deposited on top of the third seed layer and including chromium. The third seed layer includes one of NiFe, NiFeB, NiFeCr, CoFeB, CoFeTa, CoFeW, CoFeMo, CoFeTaB, CoFeWB, or CoFeMoB. The perpendicular magnetic structure further includes a magnetic fixed layer structure formed on top of the fourth seed layer and having an invariable magnetization direction substantially perpendicular to a layer plane of the magnetic fixed layer structure. The magnetic fixed layer structure includes layers of a magnetic material interleaved with layers of a transition metal. The magnetic material includes cobalt. The transition metal includes one of nickel, platinum, palladium, or iridium.

Abstract: The present invention is directed to a nonvolatile memory device including a plurality of memory slices, each memory slice including one or more memory sectors and a read circuit for sensing the resistance state of a magnetic memory cell in the memory sectors. The read circuit includes a first input node through which a reference current passes; a second input node through which a read current from the memory sectors passes; a sense amplifier configured to compare input voltages and having first and second input terminals; a reference resistor connected to the first input node at one end and the first input terminal at the other end; a variable current source connected to the reference resistor at one end and ground at the other end; and a second current source connected to the second input node at one end and ground at the other end.

Abstract: The present invention is directed to a nonvolatile memory device that includes a plurality of memory slices, each memory slice including one or more memory sectors and a read circuit for sensing the resistance state of a magnetic memory cell in the memory sectors. The read circuit includes first and second input nodes; a sense amplifier having first and second input terminals; a first target resistor and a balancing resistor connected in series between the first input node and the first input terminal; a multiplexer having a first input, a second input, and an output, with the first input being connected to the second input node and the output being connected to the second input terminal; a second target resistor and an offset resistor connected in series between the second input node and the second input; and first and second current sources connected to the first and second input terminals, respectively.

Abstract: The present invention is directed to a memory cell array comprising an array of magnetic memory elements arranged in rows and columns; a plurality of electrodes, each of which is formed adjacent to a respective one of the array of magnetic memory elements; a plurality of first conductive lines, each of which is connected to a respective row of the array of magnetic memory elements along a row direction; and a plurality of composite lines. Each composite line includes a volatile switching layer connected to a respective column of the plurality of electrodes along a column direction; an electrode layer formed adjacent to the volatile switching layer; and a second conductive line formed adjacent to the electrode layer. The dimension of the volatile switching layer may be substantially larger than the size of the magnetic memory element along the row direction.

Abstract: The present invention is directed to a memory cell that includes a magnetic tunnel junction (MTJ) memory element and a two-terminal selector element coupled in series. The MTJ memory element includes a magnetic free layer structure and a magnetic reference layer structure with an insulating tunnel junction layer interposed therebetween. The magnetic reference layer structure includes one or more magnetic reference layers having a first invariable magnetization direction substantially perpendicular to layer planes thereof. The two-terminal selector element includes a first inert electrode and a second inert electrode with a volatile switching layer interposed therebetween; a first active electrode formed adjacent to the first inert electrode; and a second active electrode formed adjacent to the second inert electrode. The volatile switching layer includes at least one conductor layer interleaved with insulating layers.

Abstract: The present invention is directed to a perpendicular magnetic structure including a first seed layer comprising a first transition metal and nitrogen, a second seed layer deposited on top of the first seed layer, and a third seed layer deposited on top of the second seed layer. One of the second and third seed layers comprises cobalt, iron, and boron. The other one of the second and third seed layers comprises chromium. The perpendicular magnetic structure further includes a magnetic fixed layer structure formed on top of the third seed layer and having an invariable magnetization direction substantially perpendicular to a layer plane of the magnetic fixed layer structure. The magnetic fixed layer structure includes layers of a magnetic material interleaved with layers of a second transition metal. The first transition metal is titanium or tantalum. The second transition metal is one of nickel, platinum, palladium, or iridium.

Abstract: The present invention is directed to a method for booting a system-on-chip (SoC) including the steps of directly executing a boot software from an on-chip magnetic random access memory (MRAM) residing on a same semiconductor as the SoC; directly executing an operating system software from an external MRAM by the SoC without loading the operating system into a volatile memory; and directly executing an application software from the external MRAM by the SoC, wherein the external MRAM is coupled to the SoC and is configured for storing the operating system software and the application software.

Abstract: The present invention is directed to a magnetic memory element including a magnetic free layer structure incorporating three magnetic free layers separated by two perpendicular enhancement layers (PELs) and having a variable magnetization direction substantially perpendicular to layer planes thereof; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure; a first magnetic reference layer formed adjacent to the insulating tunnel junction layer opposite the magnetic free layer structure; a second magnetic reference layer separated from the first magnetic reference layer by a third perpendicular enhancement layer; an anti-ferromagnetic coupling layer formed adjacent to the second magnetic reference layer; and a magnetic fixed layer formed adjacent to the anti-ferromagnetic coupling layer. The first and second magnetic reference layers have a first invariable magnetization direction substantially perpendicular to layer planes thereof.

Abstract: A non-volatile memory device configured to emulate DRAM interface comprising a memory array that includes a plurality of magnetic memory cells organized into rows and columns with at least one row of the magnetic memory cells comprising one or more pages that store data during a burst write operation; a control circuit operable to initiate the burst write operation that writes the data to the memory array while spanning multiple clock cycles; an encoder operable to encode the data to be written to the memory array; and a decoder coupled to the memory array and operable to check and correct the data previously encoded by the encoder and saved in the memory array.