Abstract: An ion implantation system has a mass analyzing magnet having interior and exterior region and defining a first entrance, second entrance, and an exit. A first ion source defines a first ion beam directed toward the first entrance along a first beam path. A second ion source defines a second ion beam directed toward the second entrance along a second beam path. A magnet current source supplies a magnet current to the mass analyzing magnet. Magnet control circuitry controls a polarity of the magnet current based on a formation of the first or second ion beam. The mass analyzing magnet mass analyzes the respective first or second ion beam to define defining a mass analyzed ion beam along a mass analyzed beam path. At least one shield in the interior or exterior region prevents line-of-sight between the first and second ion sources. Beamline components modify the mass analyzed ion beam.

Abstract: An ion implantation system, ion source, and method are provided having a gaseous aluminum-based ion source material. The gaseous aluminum-based ion source material can be, or include, dimethylaluminum chloride (DMAC), where the DMAC is a liquid that transitions into vapor phase at room temperature. An ion source receives and ionizes the gaseous aluminum-based ion source material to form an ion beam. A low-pressure gas bottle supplies the DMAC as a gas to an arc chamber of the ion source by a primary gas line. A separate, secondary gas line supplies a co-gas, such as a fluorine-containing molecule, to the ion source, where the co-gas and DMAC reduce an energetic carbon cross-contamination and/or increase doubly charged aluminum.

Abstract: A method for implanting high charge state ions into a workpiece while mitigating trace metal contamination includes generating desired ions at a first charge state from a desired species in an ion source, as well as generating trace metal ions of a contaminant species in a first ion beam. A charge-to-mass ratio of the desired ions and the trace metal ions is equal. The desired ions and trace metal ions are extracted from the ion source. At least one electron stripped from the desired ions to define a second ion beam of the desired ions at a second charge state and the trace metal ions. Only the desired ions from the second ion beam are selectively passed only through a charge selector to define a final ion beam of the desired ions at the second charge state and no trace metal ions, and the desired ions of the second charge state are implanted into a workpiece.

Abstract: A workpiece processing system has a cooling chamber enclosing a chamber volume. A workpiece support within the cooling chamber supports a workpiece having a material with an outgassing temperature, above which, the material outgases an outgas material at an outgassing rate that is toxic to personnel. A cooling apparatus selectively cools the workpiece to a predetermined temperature. A vacuum source and purge gas source selectively evacuates and selectively provides a purge gas to the chamber volume. A controller controls the cooling apparatus to cool the workpiece to the predetermined temperature, where the one or more materials are cooled below the outgassing temperature. The vacuum source and purge gas source are controlled to provide a predetermined heat transfer rate while removing the respective outgas material from the chamber volume.

Abstract: A thermal electrostatic clamp has a central electrostatic portion associated with a central region of a workpiece. A central body has a clamping surface and one or more electrodes are associated with the central body. One or more electrodes selectively electrostatically clamp at least the central region of the workpiece to the clamping surface based on an electrical current passed therethrough. One or more first heaters of the central body selectively heat the central electrostatic portion to a first temperature. A non-electrostatic peripheral portion associated with a peripheral region of the workpiece has a peripheral body encircling the central body, separated by a gap. The peripheral body is positioned beneath the peripheral region of the workpiece. The peripheral portion does not electrostatically clamp the peripheral region of the workpiece. One or more second heaters of the peripheral body selectively heat the non-electrostatic peripheral portion to a second temperature.

Abstract: An ion implantation system has a mass analyzing magnet having interior and exterior region and defining a first entrance, second entrance, and an exit. A first ion source defines a first ion beam directed toward the first entrance along a first beam path. A second ion source defines a second ion beam directed toward the second entrance along a second beam path. A magnet current source supplies a magnet current to the mass analyzing magnet. Magnet control circuitry controls a polarity of the magnet current based on a formation of the first or second ion beam. The mass analyzing magnet mass analyzes the respective first or second ion beam to define defining a mass analyzed ion beam along a mass analyzed beam path. At least one shield in the interior or exterior region prevents line-of-sight between the first and second ion sources. Beamline components modify the mass analyzed ion beam.

Abstract: An ion source has an arc chamber with a first end and a second end. A first cathode at the first end of the arc chamber has a first cathode body and a first filament disposed within the first cathode body. A second cathode at the second end of the arc chamber has a second cathode body and a second filament disposed within the second cathode body. A filament switch selectively electrically couples a filament power supply to each of the first filament and the second filament, respectively, based on a position of the filament switch. A controller controls the position of the filament switch to alternate the electrical coupling of the filament power supply between the first filament and the second filament for a plurality of switching cycles based on predetermined criteria. The predetermined criteria can be a duration of operation of the first filament and second filament.

Abstract: An ion source assembly and method has a source gas supply to provide a molecular carbon source gas to an ion source chamber. A source gas flow controller controls flow of the molecular carbon source gas to the ion source chamber. An excitation source excites the molecular carbon source gas to form carbon ions and radicals. An extraction electrode extracts the carbon ions from the ion source chamber, forming an ion beam. An oxidizing co-gas supply provides oxidizing co-gas to chamber. An oxidizing co-gas flow controller controls flow of the oxidizing co-gas to the chamber. The oxidizing co-gas decomposes and reacts with carbonaceous residues and atomic carbon forming carbon monoxide and carbon dioxide within the ion source chamber. A vacuum pump system removes the carbon monoxide and carbon dioxide, where deposition of atomic carbon within the ion source chamber is reduced and a lifetime of the ion source is increased.

Abstract: An ion source has an arc chamber defining an arc chamber volume. A reservoir is coupled to the arc chamber, defining a reservoir volume. The reservoir receives a source species to define a liquid within the reservoir volume. A conduit fluidly couples the reservoir volume to the arc chamber volume. First and second openings of the conduit are open to the respective reservoir and arc chamber volume. A heat source selectively heats the reservoir to melt the source species at a predetermined temperature. A liquid control apparatus controls a first volume of the liquid within the reservoir volume to define a predetermined supply of the liquid to the arc chamber volume. The liquid control apparatus is a pressurized gas source fluidly coupled to the reservoir to supply a gas to the reservoir and provide a predetermined amount of liquid to the arc chamber.

Abstract: A system, method, and apparatus for heating and cooling a component in chamber enclosing a chamber volume. Vacuum and purge gas ports are in fluid communication with the chamber volume. A heater apparatus selectively heats the heated apparatus to a process temperature. A vacuum valve provides selective fluid communication between a vacuum source and the vacuum port. A purge gas valve provides selective fluid communication between a purge gas source for a purge gas and the purge gas port. A controller controls the heater apparatus, vacuum and purge gas valves and to selectively flow the purge gas to the chamber volume when an equipment-safe temperature is reached. When an operator-safe temperature is reached, access to the chamber volume through an access port by an operator is permitted.

Abstract: An ion implantation system, ion source, and method are provided, where an ion source is configured to ionize an aluminum-based ion source material and to form an ion beam and a by-product including a non-conducting material. An etchant gas mixture has a predetermined concentration of fluorine and a noble gas that is in fluid communication with the ion source. The predetermined concentration of fluorine is associated with a predetermined health safety level, such as approximately a 20% maximum concentration of fluorine. The etchant gas mixture can have a co-gas with a concentration less than approximately 5% of argon. The aluminum-based ion source material can be a ceramic member, such as a repeller shaft, a shield, or other member within the ion source.

Abstract: An ion implantation system, ion source, and method are provided having a gaseous aluminum-based ion source material. The gaseous aluminum-based ion source material can be, or include, dimethylaluminum chloride (DMAC), where the DMAC is a liquid that transitions into vapor phase at room temperature. An ion source receives and ionizes the gaseous aluminum-based ion source material to form an ion beam. A low-pressure gas bottle supplies the DMAC as a gas to an arc chamber of the ion source by a primary gas line. A separate, secondary gas line supplies a co-gas, such as a fluorine-containing molecule, to the ion source, where the co-gas and DMAC reduce an energetic carbon cross-contamination and/or increase doubly charged aluminum.

Abstract: A gas generation system for an ion implantation system has a hydrogen generator configured to generate hydrogen gas within an enclosure. A chuck, such as an electrostatic chuck, supports a workpiece in an end station of the ion implantation system, and a delivery system provides the hydrogen gas to the chuck. The hydrogen gas can be provided through the chuck to a backside of the workpiece. Sensors can detect a presence of the hydrogen gas within the enclosure. A controller can control the hydrogen generator. An exhaust system can pass air through the enclosure to prevent a build-up of the hydrogen gas within the enclosure. A purge gas system provides a dilutant gas to the enclosure. An interlock system can control the hydrogen generator, delivery system, purge gas system, and exhaust system to mitigate hydrogen release based on a signal from the one or more sensors.

Abstract: An ion implantation has an ion source and a mass analyzer configured to form and mass analyze an ion beam. A bending element is positioned downstream of the mass analyzer, and respective first and second measurement apparatuses are positioned downstream and upstream of the bending element and configured to determine a respective first and second ion beam current of the ion beam. A workpiece scanning apparatus scans the workpiece through the ion beam. A controller is configured to determine an implant current of the ion beam at the workpiece and to control the workpiece scanning apparatus to control a scan velocity of the workpiece based on the implant current. The determination of the implant current of the ion beam is based, at least in part, on the first ion beam current and second ion beam current.

Abstract: An ion source has an arc chamber having first and second ends and an aperture plate to enclose a chamber volume. An extraction aperture is disposed between the first and second ends. A cathode is near the first end of the arc chamber, and a repeller is near the second end. A generally U-shaped first bias electrode is on a first side of the extraction aperture within the chamber volume. A generally U-shaped second bias electrode is on a second side of the extraction aperture within the chamber volume, where the first and second bias electrodes are separated by a first distance proximate to the extraction aperture and a second distance distal from the extraction aperture. An electrode power supply provides a first and second positive voltage to the first and second bias electrodes, where the first and second positive voltages differ by a predetermined bias differential.

Abstract: An ion source has an arc chamber having one or more arc chamber walls defining and interior region of the arc chamber. A cathode electrode is disposed along an axis. A repeller has a repeller shaft and a ceramic target member separated by a gap. The repeller shaft is not in electrical or mechanical contact with the target member, and the repeller shaft is configured to indirectly heat the target member. The target member, can be a cylinder encircling the repeller shaft, where the gap separates the cylinder from the repeller shaft. A top cap can enclose the cylinder can be separated from a top repeller surface of the repeller shaft by the gap. A target hole can be in the top cap. The target member can be supported by a bottom liner of the arc chamber or a support member mechanically and electrically coupled to the repeller shaft.

Abstract: A terminal for an ion implantation system is provided, wherein the terminal has a terminal housing for supporting an ion source configured to form an ion beam. A gas box within the terminal housing has a hydrogen generator configured to produce hydrogen gas for the ion source. The gas box is electrically insulated from the terminal housing, and is further electrically coupled to the ion source. The ion source and gas box are electrically isolated from the terminal housing by a plurality of electrical insulators. A plurality of insulating standoffs electrically isolate the terminal housing from an earth ground. A terminal power supply electrically biases the terminal housing to a terminal potential with respect to the earth ground. An ion source power supply electrically biases the ion source to an ion source potential with respect to the terminal potential. Electrically conductive tubing electrically couples the gas box and ion source.

Abstract: An ion source for forming a plasma has a cathode with a cavity and a cathode surface defining a cathode step. A filament is disposed within the cavity, and a cathode shield has a cathode shield surface at least partially encircling the cathode surface. A cathode gap is defined between the cathode surface and the cathode shield surface, where the cathode gap defines a tortured path for limiting travel of the plasma through the gap. The cathode surface can have a stepped cylindrical surface defined by a first cathode diameter and a second cathode diameter, where the first cathode diameter and second cathode diameter differ from one another to define the cathode step. The stepped cylindrical surface can be an exterior surface or an interior surface. The first and second cathode diameters can be concentric or axially offset.

Abstract: An ion source for an ion implantation system has a plurality of arc chambers. The ion source forms an ion beam from a respective one of the plurality of arc chambers based on a position of the respective one of the plurality of arc chambers with respect to a beamline. The arc chambers are coupled to a carrousel that translates or rotates the respective one of the plurality of arc chambers to a beamline position associated with the beamline. One or more of the plurality of arc chambers can have at least one unique feature, or two or more of the plurality of arc chambers can be generally identical to one another.

Abstract: An ion source is configured to form an ion beam and has an arc chamber enclosing an arc chamber environment. A reservoir apparatus can be configured as a repeller and provides a liquid metal to the arc chamber environment. A biasing power supply electrically biases the reservoir apparatus with respect to the arc chamber to vaporize the liquid metal to form a plasma in the arc chamber environment. The reservoir apparatus has a cup and cap defining a reservoir environment for the liquid metal that is fluidly coupled to the arc chamber environment by holes in the cap. Features extend from the cup into the reservoir and contact the liquid metal to feed the liquid metal toward the arc chamber environment by capillary action. A structure, surface area, roughness, and material modifies the capillary action. The feature can be an annular ring, rod, or tube extending into the liquid metal.