Abstract: A radiant source for heating a workpiece such as a semiconductor wafer including a plurality of radiant heating elements, arranged in an array that is generally concentric about a source center axis. A reflector has a reflecting surface that bounds a cavity or channel that contains the heating elements, said reflector comprising walls that extend around the center axis and that are finished for reflecting radiant energy emitted by the heating elements to a region occupied by a wafer. The channel reflecting surfaces comprise at least a part of a plane and/or cylinder and/or a cone and/or a convex to said heating elements curved surface of revolution bordering or spanning two or more adjacent heating elements.

Abstract: A method and apparatus for thermal processing of a workpiece reduces the time taken for a processing gas to be purged, or switched, during one or more processing steps for thermal processing systems. The thermal processing system includes a heating chamber in accordance with one example embodiment of the present invention. A small-volume workpiece enclosure is disposed about the workpiece. A translation mechanism, e.g., in the form of a positioning assembly, supports the small-volume workpiece enclosure for moving the small-volume workpiece enclosure and the workpiece within the heating chamber. The small-volume workpiece enclosure enables the use of relatively smaller amounts of process (ambient) gases, and decreases the purge time of such gases. The heating chamber can have at least one of a thermal radiation intensity gradient and a temperature gradient for thermally processing the workpiece. The heating chamber can have one or more heating elements disposed about the heating chamber.

Abstract: An oxygen-free and nitrogen-free plasma ashing process for removing photoresist in the presence of a low k material from a semiconductor substrate. The process includes forming reactive species by exposing a plasma gas composition to an energy source to form plasma. The plasma gas composition is free from oxygen-bearing and nitrogen-bearing gases. The plasma selectively removes the photoresist from the underlying substrate containing low k material by exposing the photoresist to the reactive species. The process can be used with carbon and/or hydrogen based low k dielectric materials.

Abstract: A system and method for processing a workpiece in a thermal processing furnace by measuring the temperature of the workpiece in the thermal processing furnace, and based upon an intended temperature profile and the measured temperature of the workpiece, moving the workpiece through the furnace to heat process the workpiece generally according to the intended temperature profile.