Abstract: An ion source has an arc chamber having a body defining and interior region. A liner defined an exposure surface of the interior region that is exposed to a plasma generated within the arc chamber. An electrode has a shaft with a first diameter that passes through the body and the liner. The electrode is electrically isolated from the body where the liner is a plate having a first surface with an optional recess having a second surface. A hole is defined through the recess for the shaft to pass through. The hole has a second diameter that is larger than the first diameter, and an annular gap exists between the plate and the shaft. The plate has a lip extending from the second surface toward the first surface that surrounds the hole within the recess and generally prevents particulate contaminants from entering the annular gap.

Abstract: An ion implantation system has a first chamber and a process chamber with a heated chuck. A controller transfers the workpiece between the heated chuck and first chamber and selectively energizes the heated chuck first and second modes. In the first and second modes, the heated chuck is heated to a first and second temperature, respectively. The first temperature is predetermined. The second temperature is variable, whereby the controller determines the second temperature based on a thermal budget, an implant energy, and/or an initial temperature of the workpiece in the first chamber, and generally maintains the second temperature in the second mode. Transferring the workpiece from the heated chuck to the first chamber removes implant energy from the process chamber in the second mode. Heat may be further transferred from the heated chuck to a cooling platen by a transfer of the workpiece therebetween to sequentially cool the heated chuck.

Abstract: A resolving aperture assembly for an ion implantation system has a first plate and a second plate, where the first plate and second plate generally define a resolving aperture therebetween. A position of the first plate with respect to the second plate generally defines a width of the resolving aperture. One or more actuators are operably coupled to one or more of the first plate and second plate and are configured to selectively vary the position the first plate and second plate with respect to one another, thus selectively varying the width of the resolving aperture. A servo motor precisely varies the resolving aperture width and a pneumatic cylinder independently selectively closes the resolving aperture. A downstream position actuator varies a position of the resolving aperture along a path of the ion beam, and a controller controls the one or more actuators based on desired properties of the ion beam.

Abstract: An electrostatic chuck and gripping system are configured for clamping and processing workpieces having differing diameters. An ion implantation apparatus selectively provides ions to a first workpiece and a second workpiece in a process chamber, where a diameter of the first workpiece is greater the second workpiece. A chuck supports the respective first or second workpiece within the process chamber during exposure to the ions. A load lock chamber isolates a process environment from an external environment and has a workpiece support for the respective first or second workpiece during a transfer of the first or second workpiece between the process chamber and the external environment. A vacuum robot transfers the first or second workpiece between the chuck and workpiece support, and has a gripper mechanism configured to selectively grip the first or second workpiece between a plurality of stepped guides.

Abstract: A system and method for clamping a workpiece to an electrostatic clamp (ESC) comprises placing a first workpiece on a surface of the ESC and applying a first set of clamping parameters to the ESC, therein clamping the first workpiece to the surface of the ESC with a first clamping force. A degree of clamping of the workpiece to the ESC is determined and the application of the first set of clamping parameters to the ESC is halted based on a process recipe. A second set of clamping parameters is applied to the ESC after halting the application of the first set of clamping parameters to the ESC, and the workpiece is removed from the surface of the ESC concurrent with the application of the second set of clamping parameters to the ESC when the degree of clamping of the workpiece to the ESC is less than or approximately equal to a threshold clamping value. The second set of clamping parameters to the ESC is further halted after removing the workpiece from the surface of the ESC.

Abstract: An optics plate for an ion implantation system, the optics plate comprising a pair of aperture assemblies. Each pair of aperture assemblies respectively comprises a first aperture member, a second aperture member; and an aperture fastener, wherein the aperture fastener fastens the first aperture member to the second aperture member. An aperture tip may be also fastened to the second aperture member. One or more of the first aperture member, second aperture member, aperture tip, and aperture fastener is made of one or more of a refractory metal, tungsten, lanthanated tungsten alloy, yttrium tungsten alloy, and/or graphite and silicon carbide. The aperture assemblies may define an extraction electrode assembly, a ground electrode assembly, or other electrode assembly in the ion implantation system. The aperture fastener may be a screw and a bevel washer. The first aperture member may be operably coupled to a base plate via an aperture assembly fastener.

Abstract: A workpiece support has a vessel having a top interior wall and a bottom interior wall. An interior cavity is defined between the top interior wall and bottom interior wall, wherein a support surface configured to support a workpiece. A plate is positioned within the interior cavity, dividing the interior cavity into a top cavity and a bottom cavity. The top and bottom cavities are fluidly coupled about a periphery of the plate. A first taper defined in one or more of the top interior wall and a top portion of the plate provides a substantially constant volume across a radial cross-section of the top cavity. A second taper defined in one or more of the bottom interior wall and a bottom portion of the plate provides a substantially constant volume across a radial cross-section of the bottom cavity. First and second ports fluidly couple the top and bottom cavities to respective first and second fluid channels.

Abstract: A semiconductor manufacturing system or process, such as an ion implantation system, apparatus and method, including a component or step for heating a semiconductor workpiece are provided. An optical heat source emits light energy to heat the workpiece. The optical heat source is configured to provide minimal or reduced emission of non-visible wavelengths of light energy and emit light energy at a wavelength in a maximum energy light absorption range of the workpiece.

Abstract: A system, apparatus and method for increasing ion source lifetime in an ion implanter are provided. Oxidation of the ion source and ion source chamber poisoning resulting from a carbon and oxygen-containing source gas is controlled by utilizing a hydrogen co-gas, which reacts with free oxygen atoms to form hydroxide and water.

Abstract: An ion implantation system measurement system has a scan arm that rotates about an axis and a workpiece support to translate a workpiece through the ion beam. A first measurement component downstream of the scan arm provides a first signal from the ion beam. A second measurement component with a mask is coupled to the scan arm to provide a second signal from the ion beam with the rotation of the scan arm. The mask permits varying amounts of the ion radiation from the ion beam to enter a Faraday cup based on an angular orientation between the mask and the ion beam. A blocking plate selectively blocks the ion beam to the first faraday based on the rotation of the scan arm. A controller determines an angle and vertical size of the ion beam based on the first signal, second signal, and orientation between the mask and ion beam as the second measurement component rotates.

Abstract: An ion implantation system provides ions to a workpiece positioned in a process environment of a process chamber on a sub-ambient temperature chuck. An intermediate chamber having an intermediate environment is in fluid communication with an external environment and has a cooling station and heating station for cooling and heating the workpiece. A load lock chamber is provided between the process chamber and intermediate chamber to isolate the process environment from the intermediate environment. A positive pressure source provides a dry gas within the intermediate chamber at dew point that is less than a dew point of the external environment to the intermediate chamber. The positive pressure source isolates the intermediate environment from the external environment via a flow of the dry gas from the intermediate chamber to the external environment.

Abstract: A system and method are provided for implanting ions at low energies into a workpiece. An ion source configured to generate an ion beam is provided, wherein a mass resolving magnet is configured to mass resolve the ion beam. The ion beam may be a ribbon beam or a scanned spot ion beam. A mass resolving aperture positioned downstream of the mass resolving magnet filters undesirable species from the ion beam. A combined electrostatic lens system is positioned downstream of the mass analyzer, wherein a path of the ion beam is deflected and contaminants are generally filtered out of the ion beam, while concurrently decelerating and parallelizing the ion beam. A workpiece scanning system is further positioned downstream of the combined electrostatic lens system, and is configured to selectively translate a workpiece in one or more directions through the ion beam, therein implanting ions into the workpiece.

Abstract: An electrostatic clamp (ESC) has a clamping surface, and first and second pairs of electrodes. Each of the first pair of electrodes are associated with a respective third of the clamping surface, and each of the second pair of electrodes are associated with a respective sixth of the clamping surface. A peripheral region of each of the first and second pairs of electrodes spirals toward the periphery of the clamping surface. A DC mode connects one of each of the first and second pair of electrodes to a positive and the other one of the respective first and second pair of electrodes to a negative of a power supply. An AC mode electrically connects first, second, and third phase terminals of the power supply to one of the first pair of electrodes, the other one of the first pair of electrodes, and both of the second pair of electrodes, respectively.

Abstract: A combined scanning and focusing magnet for an ion implantation system is provided. The combined scanning and focusing magnet has a yoke having a high magnetic permeability. The yoke defines a hole configured to pass an ion beam therethrough. One or more scanner coils operably are coupled to the yoke and configured to generate a time-varying predominantly dipole magnetic field when electrically coupled to a power supply. One or more focusing coils are operably coupled to the yoke and configured to generate a predominantly multipole magnetic field, wherein the predominantly multipole magnetic field is one of static or time-varying.

Abstract: A hybrid scanner is disclosed that is capable of performing at least one of an electric and magnetic scanning of an ion beam. The hybrid scanner comprises a plurality of magnetic elements configured to generate a magnetic field across the ion beam for magnetic scanning, and a plurality of electric elements configured to generate an electric field proximate to the ion beam for electric scanning. A power delivery controller is coupled to at least one of the magnetic elements and at least one of the electric elements, and is configured to selectively provide power to the magnetic and electric elements.

Abstract: An ion implantation system has an ion implantation apparatus coupled to first and second dual load lock assemblies, each having a respective first and second chamber separated by a common wall. Each first chamber has a pre-heat apparatus configured to heat a workpiece to a first temperature. Each second chamber has a post-cool apparatus configured to cool the workpiece to a second temperature. A thermal chuck retains the workpiece in a process chamber for ion implantation, and the thermal chuck is configured to heat the workpiece to a third temperature. A pump and vent are in selective fluid communication with the first and second chambers.

Abstract: A modular ion source and extraction apparatus comprises an ion source chamber selectively electrically coupled to a voltage potential, wherein the ion source chamber comprises an extraction aperture. An extraction electrode is positioned proximate to the extraction aperture of the ion source chamber, wherein the extraction electrode is electrically grounded and configured to extract ions from the ion source chamber. One or more linkages operably couple to the ion source chamber, and one or more insulators couple the extraction electrode to the respective one or more linkages, wherein the one or more insulators electrically insulate the respective one or more linkages from the extraction electrode, therein electrically insulating the extraction electrode from the ion source chamber.

Abstract: A Johnsen-Rahbek (J-R) electrostatic clamp is provided for clamping a workpiece, wherein the J-R clamp has a dielectric layer having a clamping surface associated with the workpiece and a backside surface generally opposing the clamping surface. The dielectric layer has a plurality of regions, wherein each of the plurality of regions comprises one of a plurality of dielectric materials. Each of the plurality of dielectric materials has a baseline resistivity that is different from the remainder of the plurality of dielectric materials, and each of the plurality of regions of the dielectric layer has a baseline resistivity that is different from the remainder of the plurality of regions of the dielectric layer. A plurality of electrically conductive electrodes are associated with the backside surface of the dielectric layer, wherein each of the plurality of electrically conductive electrodes are associated with one or more of the plurality of regions of the dielectric layer.

Abstract: An ion implantation system provides ions to a workpiece positioned in a vacuum environment of a process chamber on a cooled chuck. A pre-chill station within the process chamber has a chilled workpiece support configured to cool the workpiece to a first temperature, and a post-heat station within the process chamber, has a heated workpiece support configured to heat the workpiece to a second temperature. The first temperature is lower than a process temperature, and the second temperature is greater than an external temperature. A workpiece transfer arm is further configured to concurrently transfer two or more workpieces between two or more of the chuck, a load lock chamber, the pre-chill station, and the post-heat station.

Abstract: An ion implantation system and method for implanting ions at varying energies across a workpiece is provided. The system comprises an ion source configured to ionize a dopant gas into a plurality of ions and to form an ion beam. A mass analyzer is positioned downstream of the ion source and configured to mass analyze the ion beam. A deceleration/acceleration stage is positioned downstream of the mass analyzer. An energy filter may form part of the deceleration/acceleration stage or may positioned downstream of the deceleration/acceleration stage. An end station is provided having a workpiece support associated therewith for positioning the workpiece before the ion beam is also provided. A scanning apparatus is configured to scan one or more of the ion beam and workpiece support with respect to one another. One or more power sources are operably coupled to one or more of the ion source, mass analyzer, deceleration/acceleration stage, and energy filter.