Abstract: An ion implantation system is provided having one or more conductive components comprised of one or more of lanthanated tungsten and a refractory metal alloyed with a predetermined percentage of a rare earth metal. The conductive component may be a component of an ion source, such as one or more of a cathode, cathode shield, a repeller, a liner, an aperture plate, an arc chamber body, and a strike plate. The aperture plate may be associated with one or more of an extraction aperture, a suppression aperture and a ground aperture.

Abstract: The present invention is directed to circuits, systems, and methods to quickly to quench an arc that may form between high voltage electrodes associated with an ion source to shorten the duration of the arc and mitigate non-uniform ion implantations. In one example, an arc detection circuit for detecting an arc in an ion implantation system includes an analog-to-digital converter (ADC) and an analysis circuit. The ADC is configured to convert a sensing current indicative of a current being supplied to an electrode in the ion implantation system to a digital current signal that quantifies the sensing current. The analysis circuit is configured to analyze the digital current signal to determine if the digital current signal meets threshold parameter value and in response to the digital current signal meeting the threshold parameter value, provide an arc detection signal to a trigger control circuit that activates an arc quenching mechanism.

Abstract: An ion implantation system and method are provided where an ion beam is tuned to a first process recipe. The ion beam is scanned along a scan plane at a first frequency, defining a first scanned ion beam. A beam profiling apparatus is translated through the first scanned ion beam and one or more properties of the first scanned ion beam are measured across a width of the first scanned ion, thus defining a first beam profile associated with the first scanned ion beam. The ion beam is then scanned at a second frequency, thus defining a second scanned ion beam, wherein the second frequency is less than the first frequency. A second beam profile associated with the second scanned ion beam is determined based, at least in part, on the first beam profile. Ions are subsequently implanted into a workpiece via the second scanned ion beam.

Abstract: An ion implantation system has a first chamber and a process chamber with a heated chuck. A controller transfers the workpiece between the heated chuck and first chamber and selectively energizes the heated chuck first and second modes. In the first and second modes, the heated chuck is heated to a first and second temperature, respectively. The first temperature is predetermined. The second temperature is variable, whereby the controller determines the second temperature based on a thermal budget, an implant energy, and/or an initial temperature of the workpiece in the first chamber, and generally maintains the second temperature in the second mode. Transferring the workpiece from the heated chuck to the first chamber removes implant energy from the process chamber in the second mode. Heat may be further transferred from the heated chuck to a cooling platen by a transfer of the workpiece therebetween to sequentially cool the heated chuck.

Abstract: A resolving aperture assembly for an ion implantation system has a first plate and a second plate, where the first plate and second plate generally define a resolving aperture therebetween. A position of the first plate with respect to the second plate generally defines a width of the resolving aperture. One or more actuators are operably coupled to one or more of the first plate and second plate and are configured to selectively vary the position the first plate and second plate with respect to one another, thus selectively varying the width of the resolving aperture. A servo motor precisely varies the resolving aperture width and a pneumatic cylinder independently selectively closes the resolving aperture. A downstream position actuator varies a position of the resolving aperture along a path of the ion beam, and a controller controls the one or more actuators based on desired properties of the ion beam.

Abstract: A system and method for controlling an ion implantation system as a function of sampling ion beam current and uniformity thereof. The ion implantation system includes a plurality of ion beam optical elements configured to selectively steer and/or shape the ion beam as it is transported toward a workpiece, wherein the ion beam is sampled at a high frequency to provide a plurality of ion beam current samples, which are then analyzed to detect fluctuations and/or nonuniformities or unpredicted variations amongst the plurality of ion beam current samples. Beam current samples are compared against predetermined threshold levels, and/or predicted nonuniformity levels to generate a control signal when a detected nonuniformity in the plurality of ion beam current density samples exceeds a predetermined threshold.

Abstract: Processes and systems for carbon ion implantation include utilizing phosphine as a co-gas with a carbon oxide gas in an ion source chamber. In one or more embodiments, carbon implantation with the phosphine co-gas is in combination with the lanthanated tungsten alloy ion source components, which advantageously results in minimal oxidation of the cathode and cathode shield, among other components within the ion source chamber.

Abstract: An arc chamber liner has first and second surfaces and a hole having a first diameter. A liner lip having a second diameter extends upwardly from the second surface toward the first surface and surrounds the hole. An electrode has a shaft with a third diameter and a head with a fourth diameter. The third diameter is less than the first diameter and passes through the body and hole and is electrically isolated from the liner by an annular gap. The head has a third surface having an electrode lip extending downwardly from the third surface toward the second surface. The electrode lip has a fifth diameter between the second and fourth diameters. A spacing between the liner and electrode lips defines a labyrinth seal to generally prevent contaminants from entering the annular gap. The shaft has an annular groove configured to accept a boron nitride seal.

Abstract: An RF feedthrough has an electrically insulative cone that is hollow having first and second openings at first and second ends having first and second diameters. The first diameter is larger than the second diameter, defining a tapered sidewall of the cone to an inflection point. A stem is coupled to the second end of the cone, and passes through the first opening and second opening. A flange is coupled to the first end of the cone and has a flange opening having a third diameter. The third diameter is smaller than the first diameter. The stem passes through the flange opening without contacting the flange. The flange couples the cone to a chamber wall hole. Contact portions of the cone may be metallized. The cone and flange pass the stem through the hole while electrically insulating the stem from the wall of the chamber.

Abstract: An electrostatic clamp monitoring system has an electrostatic clamp configured to selectively electrostatically clamp a workpiece to a clamping surface via one or more electrodes. A power supply electrically coupled to the electrostatic clamp is configured to selectively supply a clamping voltage to the one or more electrodes. A data acquisition system is coupled to the power supply and configured to measure a current supplied to the one or more electrodes, therein defining a measured current. A controller integrates the measured current over time, therein determining a charge value associated a clamping force between the workpiece and electrostatic clamp. A memory stores the charge value associated with the clamping force over a plurality of clamping cycles, therein defining a plurality of charge values, and the controller determines a clamping capability of the electrostatic clamp based on a comparison of a currently determined charge value to the plurality of charge values.

Abstract: Processes and systems for carbon ion implantation include utilizing phosphorous trifluoride (PF3) as a co-gas with carbon oxide gas, and in some embodiments, in combination with the lanthanated tungsten alloy ion source components advantageously results in minimal oxidation of the cathode and cathode shield. Moreover, acceptable levels of carbon deposits on the arc chamber internal components have been observed as well as marked reductions in the halogen cycle, i.e., WFx formation.

Abstract: A workpiece processing system, has a process chamber coupled to an outgassing chamber. An outgassing chamber valve selectively isolates a processing environment from an outgassing environment defined within the respective process and outgassing chambers. A heater selectively heats the workpiece on a workpiece support in the outgassing chamber to a first predetermined temperature. A vacuum source selectively depressurizes the outgassing chamber to a first predetermined pressure. A workpiece transfer apparatus selectively transfers the workpiece between the outgassing and process chambers. A controller isolates the workpiece in the outgassing chamber by the outgassing chamber valve and is configured to concurrently heat the workpiece to the first predetermined temperature and depressurize the outgassing chamber to the first predetermined pressure by the respective heater and vacuum source.

Abstract: An electrostatic chuck for clamping workpieces having differing diameters is provided. A central electrostatic chuck member associated with a first workpiece and a first peripheral electrostatic chuck member associated with a second workpiece are provided. An elevator translates the first peripheral electrostatic chuck member with respect to central electrostatic chuck member between a retracted position and an extended position. In the retracted position, the first workpiece contacts only the first surface. In the extended position, the second workpiece contacts the first surface and the second surface. A first peripheral shield generally shields the second surface when the first peripheral electrostatic chuck member is in the retracted position. Additional peripheral electrostatic chuck members and peripheral shields can be added to accommodate additional workpiece diameters.

Abstract: An ion source assembly and method is provided for improving ion implantation performance. The ion source assembly has an ion source chamber and a source gas supply provides a molecular carbon source gas such as toluene to the ion source chamber. A source gas flow controller controls a flow of the molecular carbon source gas to the ion source chamber. An excitation source excites the molecular carbon source gas, forming carbon ions and atomic carbon. An extraction electrode extracts the carbon ions from the ion source chamber, forming an ion beam. A hydrogen peroxide co-gas supply provides a predetermined concentration of hydrogen peroxide co-gas to the ion source chamber, and a hydrogen peroxide co-gas flow controller controls a flow of the hydrogen peroxide gas to the ion source chamber. The hydrogen peroxide co-gas decomposes within the ion source chamber and reacts with the atomic carbon from the molecular carbon source gas in the ion source chamber, forming hydrocarbons within the ion source chamber.

Abstract: A system and method is provided maintaining a temperature of a workpiece during an implantation of ions in an ion implantation system, where the ion implantation system is characterized with a predetermined set of parameters. A heated chuck is provided at a first temperature and heats the workpiece to the first temperature. Ions are implanted into the workpiece concurrent with the heating, and thermal energy is imparted into the workpiece by the ion implantation. A desired temperature of the workpiece is maintained within a desired accuracy during the implantation of ions by selectively heating the workpiece on the heated chuck to a second temperature. The desired temperature is maintained based, at least in part, on the characterization of the ion implantation system. Thermal energy imparted into the workpiece from the implantation is mitigated by the selective heating of the workpiece on the heated chuck at the second temperature.

Abstract: An ion implantation system is provided having an ion source configured to form an ion beam from aluminum iodide. A beamline assembly selectively transports the ion beam to an end station configured to accept the ion beam for implantation of aluminum ions into a workpiece. The ion source has a solid-state material source having aluminum iodide in a solid form. A solid source vaporizer vaporizes the aluminum iodide, defining gaseous aluminum iodide. An arc chamber forms a plasma from the gaseous aluminum iodide, where arc current from a power supply is configured to dissociate aluminum ions from the aluminum iodide. One or more extraction electrodes extract the ion beam from the arc chamber. A water vapor source further introduces water to react residual aluminum iodide to form hydroiodic acid, where the residual aluminum iodide and hydroiodic acid is evacuated from the system.

Abstract: An insulator for an ion source is positioned between the apertured ground electrode and apertured suppression electrode. The insulator has an elongate body having a first end and a second end, where one or more features are defined in the elongate body and increase a gas conductance path along a surface of the elongate body from the first end to the second end. One or more of the features is an undercut extending generally axially or at a non-zero angle from an axis of the elongate body into the elongate body. One of the features can be a rib extending from a radius of the elongate body.

Abstract: A workpiece alignment system has a workpiece support to support a workpiece. A first light emitter directs a first light beam toward the workpiece. A first light receiver receives the first light beam. A rotation device rotates the workpiece support about a support axis. A second light emitter directs a second light beam toward a peripheral region of the workpiece. A second light receiver receives the second light beam concurrent with the rotation of the workpiece. A controller determines a transmissivity of the workpiece based on a total initial emittance of the first light beam a transmission of the first light beam through the workpiece. The controller determines a position of the workpiece with respect to the support axis based, at least in part, on a rotational position of the workpiece, a portion of the second light beam received, and the determined transmissivity.

Abstract: An ion implantation system has an ion source forming an ion beam. An mass analyzer defines and varies a mass analyzed beam along a beam path. A moveable mass resolving aperture assembly has a resolving aperture whose position is selectively varied in response to the variation of the beam path by the mass analyzer. A deflecting deceleration element positioned selectively deflects the beam path and selectively decelerate the mass analyzed beam. A controller selectively operates the ion implantation system in both a drift mode and decel mode. The controller passes the mass analyzed beam along a first path through the resolving aperture without deflection or deceleration in the drift mode and deflects and decelerates the beam along a second path in the decel mode. The position of the resolving aperture is selectively varied based on the variation in the beam path through the mass analyzer and the deflecting deceleration element.

Abstract: A workpiece clamping status detection system and method for detecting a clamping state of a clamping device is provided. A clamping device having a clamping surface is configured to selectively clamp a workpiece to the clamping surface. The clamping device may be an electrostatic chuck or a mechanical clamp for selectively securing a semiconductor wafer thereto. A vibration-inducing mechanism is further provided, wherein the vibration-inducing mechanism is configured to selectively vibrate one or more of the clamping device and workpiece. A vibration-sensing mechanism is also provided, wherein the vibration-sensing mechanism is configured to detect the vibration of the one or more of the clamping device and workpiece. Detection of clamping status utilizes changes in acoustic properties, such as a shift of natural resonance frequency or acoustic impedance, to determine clamping condition of the workpiece.