Patents Assigned to AZ Electronic Materials USA Corp.
  • Patent number: 8993214
    Abstract: A positive photosensitive siloxane composition comprising at least three types of following polysiloxanes (A), (B) and (C) obtained by hydrolyzing and condensing a silane compound represented by general formula (1) R1nSi (OR2)4-n, a diazonaphthoquinone derivative, and a solvent: a polysiloxane (A) such that if pre-baked the film thereof will be soluble in a 5 weight % TMAH aqueous solution and the solution rate of said film will be 1,000 ?/sec or less; a polysiloxane (B) such that if pre-baked the solution rate of the film thereof will be 4,000 ?/sec or more relative to a 2.38 weight % TMAH aqueous solution; and a polysiloxane (C) such that if pre-baked the solution rate of the film thereof will be between 200 and 3,000 ?/sec relative to a 2.38 weight % TMAH aqueous solution.
    Type: Grant
    Filed: May 15, 2012
    Date of Patent: March 31, 2015
    Assignee: AZ Electronic Materials USA Corp.
    Inventors: Daishi Yokoyama, Takashi Fuke, Yuji Tashiro, Takashi Sekito, Toshiaki Nonaka
  • Patent number: 8969172
    Abstract: [Problem] To provide a method for forming an isolation structure having a low shrinkage percentage and a low tensile stress. [Means for Solving] A first polysilazane composition containing a porogen is cast on the surface of a substrate to form a coat, and then the coat is fired to form a porous siliceous film having a refractive index of 1.3 or less. Thereafter, the surface of the porous siliceous film is soaked with a second polysilazane composition, and then fired to form an isolation structure of a siliceous film having a refractive index of 1.4 or more.
    Type: Grant
    Filed: November 2, 2011
    Date of Patent: March 3, 2015
    Assignee: AZ Electronic Materials USA Corp.
    Inventors: Naoko Nakamoto, Katsuchika Suzuki, Shinji Sugahara, Tatsuro Nagahara
  • Publication number: 20150017587
    Abstract: [Object] To provide a composition enabling to form a fine negative photoresist pattern free from troubles, such as, surface roughness, bridge defects, and resolution failure; and also to provide a pattern formation method using that composition. [Means to Solve the Problem] A fine pattern-forming composition is used for miniaturizing a resist pattern by fattening said pattern in a process of formation of a negative resist pattern using a chemically amplified resist composition. The fine pattern-forming composition comprises a polymer comprising a repeating unit having a structure of the following formula (A), (B) or (C): and a solvent. This composition is cast on a negative resist pattern obtained by development with an organic solvent developer, and then heated to form a fine pattern.
    Type: Application
    Filed: October 10, 2012
    Publication date: January 15, 2015
    Applicant: AZ ELECTRONIC MATERIALS USA CORP.
    Inventors: Tetsuo Okayasu, Takashi Sekito, Mashiro Ishii
  • Publication number: 20150004421
    Abstract: An inorganic polysilazane resin of the present invention has a Si/N ratio (i.e. a ratio of contained silicon atoms to contained nitrogen atoms) of 1.30 or more. The inorganic polysilazane resin having such a high Si content can be produced by, for example, a method in which an inorganic polysilazane compound containing both Si—NH and Si—Cl is heated to react NH with Cl, a method in which a silazane oligomer (polymer) that leaves no Si—Cl bond is synthesized and a dihalosilane is added to the synthesized silazane oligomer (polymer) to perform a thermal reaction, and the like. A siliceous film can be formed by, for example, applying a coating composition containing the inorganic polysilazane resin onto a base plate and then dried and the dried product is then oxidized by bringing the dried product into contact with water vapor or hydrogen peroxide vapor and water vapor under heated conditions.
    Type: Application
    Filed: February 1, 2013
    Publication date: January 1, 2015
    Applicant: AZ ELECTRONIC MATERIALS USA CORP.
    Inventors: Takashi Fujiwara, Ralph Grottenmueller, Takashi Kanda, Tatsuro Nagahara
  • Patent number: 8906590
    Abstract: The invention relates to an antireflective coating composition comprising a crosslinker and a crosslinkable polymer capable of being crosslinked by the crosslinker, where the crosslinkable polymer comprises a unit represented by structure (1): -A-B-C-??(1) where A is a fused aromatic ring, B has a structure (2), and C is a hydroxybiphenyl of structure (3) where R1 is C1-C4alkyl and R2 is C1-C4alkyl. The invention further relates to a process for forming an image using the composition.
    Type: Grant
    Filed: January 17, 2012
    Date of Patent: December 9, 2014
    Assignee: AZ Electronic Materials USA Corp.
    Inventors: Dalil M Rahman, Douglas McKenzie, Jianhui Shan, JoonYeon Cho, Salem K. Mullen, Clement Anyadiegwu
  • Patent number: 8906993
    Abstract: [Object] To provide a coating composition excellent in coatability and free from viscosity increase caused by degradation over time, and also to provide a hardened film-formation method employing that. [Means] The present invention provides a coating composition comprising: a siloxane resin having silanol groups or alkoxysilyl groups, and a polyol having hydroxyl groups at both ends of a straight 2 to 5 carbon atom hydrocarbon chain. This coating composition enables to form a hardened film of high transparency, of high insulation and of low dielectricity.
    Type: Grant
    Filed: April 11, 2012
    Date of Patent: December 9, 2014
    Assignee: AZ Electronic Materials USA Corp.
    Inventors: Takashi Sekito, Daishi Yokoyama, Takashi Fuke, Yuji Tashiro, Toshiaki Nonaka, Yasuaki Tanaka
  • Publication number: 20140356792
    Abstract: [Object] To provide a composition for forming a tungsten oxide film from an aqueous solution, and also to provide a pattern formation method employing that composition. [Means] The present invention provides a tungsten oxide film-forming composition comprising: water, a water-soluble metatungstate, and at least one additive selected from the group consisting of anionic polymers, nonionic polymers, anionic surfactants, and tertiary amino group-containing nonionic surfactants. For forming a pattern, this composition can be employed in place of a silicon dioxide film-forming composition in a pattern formation process using an image reversal trilayer structure, a resist undercoat layer or a resist top protective film.
    Type: Application
    Filed: August 10, 2012
    Publication date: December 4, 2014
    Applicant: AZ ELECTRONIC MATERIALS USA CORP.
    Inventor: Go Noya
  • Publication number: 20140335452
    Abstract: A positive photosensitive siloxane composition comprising at least three types of following polysiloxanes (A), (B) and (C) obtained by hydrolyzing and condensing a silane compound represented by general formula (1) R1nSi (OR2)4-n, a diazonaphthoquinone derivative, and a solvent: a polysiloxane (A) such that if pre-baked the film thereof will be soluble in a 5 weight % TMAH aqueous solution and the solution rate of said film will be 1,000 ?/sec or less; a polysiloxane (B) such that if pre-baked the solution rate of the film thereof will be 4,000 ?/sec or more relative to a 2.38 weight % TMAH aqueous solution; and a polysiloxane (C) such that if pre-baked the solution rate of the film thereof will be between 200 and 3,000 ?/sec relative to a 2.38 weight % TMAH aqueous solution.
    Type: Application
    Filed: May 15, 2012
    Publication date: November 13, 2014
    Applicant: AZ ELECTRONIC MATERIALS USA CORP.
    Inventors: Daishi Yokoyama, Takashi Fuke, Yuji Tashiro, Takashi Sekito, Toshiaki Nonaka
  • Publication number: 20140335448
    Abstract: [Object] To provide a photosensitive siloxane resin composition excellent in alkali-solubility and in sensitivity, and also to provide a pattern-formation method employing that. [Means] The present invention provides a photosensitive siloxane resin composition comprising: a siloxane resin having silanol groups or alkoxysilyl groups, a crown ether, a photosensitive material, and an organic solvent. This photosensitive composition is cast on a substrate, subjected to imagewise exposure, treated with an alkali aqueous solution, and cured to form a pattern.
    Type: Application
    Filed: May 17, 2012
    Publication date: November 13, 2014
    Applicant: AZ ELECTRONIC MATERIALS USA CORP.
    Inventors: Takashi Sekito, Daishi Yokoyama, Takashi Fuke, Yuki Tashiro, Toshiaki Nonaka, Yasuaki Tanaka
  • Patent number: 8883397
    Abstract: A positive photosensitive siloxane composition containing: a polysiloxane (Ia), which is obtained by hydrolyzing and condensing the silane compound represented by RSi(OR1)3 in general formula (1) and the silane compound represented by Si(OR1)4 in general formula (2) in the presence of a basic catalyst, and a pre-baked film of which has a dissolution rate of 1,000 ?/second or less in a 5 wt % TMAH aqueous solution; a polysiloxane (Ib), which is obtained by hydrolyzing and condensing at least the silane compound represented by general formula (1) in the presence of an acid or basic catalyst, and a pre-baked film of which has a dissolution rate of 100 ?/second or more in a 2.38 wt % TMAH aqueous solution; and a diazonaphthoquinone derivative and solvent.
    Type: Grant
    Filed: August 19, 2011
    Date of Patent: November 11, 2014
    Assignee: AZ Electronic Materials USA Corp.
    Inventors: Daishi Yokoyama, Takashi Fuke, Yuji Tashiro, Takashi Sekito, Toshiaki Nonaka
  • Patent number: 8852855
    Abstract: [Object] To provide a top anti-reflection coating composition equal or superior to known products in film-formability, in refractive index, in temporal stability and in safety; and also to provide a pattern formation method using the same. [Means] A top anti-reflection coating composition comprising a solvent, an alkylsulfonic acid having 10 to 18 carbon atoms, and a fluorine-containing polymer having a weight average molecular weight of 300000 to 800000 and represented by the formula (1): -Ax-By- (1). In the formula (1), A is a repeating unit represented by the formula (A): (R is a fluorine-containing alkylene group having 1 to 40 carbon atoms or R is a fluorine-containing alkylene group having 2 to 100 carbon atoms and an ether bond); B is a repeating unit capable of combining with A to form a copolymer; x and y are numbers indicating the polymerization ratios, provided that x is not equal to 0; and A and B may randomly combine with each other or may form blocks.
    Type: Grant
    Filed: April 11, 2012
    Date of Patent: October 7, 2014
    Assignee: AZ Electronic Materials USA Corp.
    Inventors: Takayuki Sao, Tomohide Katayama
  • Patent number: 8828877
    Abstract: The present invention provides an etching solution less affected by trench structures and also provides an isolation structure-formation process employing the solution. The etching solution contains hydrofluoric acid and an organic solvent. The organic solvent has a ?H value defined by Hansen solubility parameters in the range of 4 to 12 inclusive and the saturation solubility thereof in water is 5 wt % or more at 20° C. This solution can be adopted instead of known etching solutions used in conventional production processes of semiconductor elements.
    Type: Grant
    Filed: May 24, 2010
    Date of Patent: September 9, 2014
    Assignee: AZ Electronic Materials USA Corp.
    Inventor: Issei Sakurai
  • Publication number: 20140234783
    Abstract: The present invention provides a rinse solution for lithography and a pattern formation method using the solution. They can improve the pattern collapse, surface roughness and surface defects. The solution contains at least a sulfonic acid a nonionic surfactant having an alkyleneoxy group and water.
    Type: Application
    Filed: March 22, 2012
    Publication date: August 21, 2014
    Applicant: AZ ELECTRONIC MATERIALS USA CORP.
    Inventors: Xiaowei Wang, Georg Pawlowski, Yuriko Matsuura
  • Patent number: 8796398
    Abstract: There are provided a composition for forming a superfine pattern and a method employing the same for forming a superfine pattern. The composition enables to simply produce a superfine pattern with high mass productivity. The composition comprises perhydropolysilazane (I), silicon-containing polymer (II) having a hydrocarbon group, and a solvent. The mixture of those polymers contains silicon-hydrogen bonds and silicon-hydrocarbon group bonds in such amounts that the number of the silicon-hydrocarbon group bonds is in a ratio of 1 to 44% based on the total number of the silicon-hydrogen bonds and the silicon-hydrocarbon group bonds. The composition is applied on a resist pattern to form a spacer formed of the composition on the side wall of the ridges in the pattern, and then the spacer or a resin layer disposed around the spacer is used as a mask to form a superfine pattern.
    Type: Grant
    Filed: December 27, 2010
    Date of Patent: August 5, 2014
    Assignee: AZ Electronic Materials USA Corp.
    Inventors: Munirathna Padmanaban, Jin Li, Toru Koike, Yusuke Takano, Kazunori Kurosawa
  • Publication number: 20140193753
    Abstract: The present invention provides a composition for forming a bottom anti-reflective coating, and also provides a photoresist pattern formation method employing that composition. The composition gives a bottom anti-reflective coating used in a lithographic process for manufacturing semiconductor devices, and the coating can be developed with a developing solution for photoresist. The composition contains a solvent, a polymer having a condensed polycyclic aromatic group, and a compound having a maleimide derivative or a maleic anhydride derivative. The composition may further contain a photo acid generator or a crosslinking agent.
    Type: Application
    Filed: February 19, 2014
    Publication date: July 10, 2014
    Applicant: AZ ELECTRONIC MATERIALS USA CORP.
    Inventors: Shigemasa NAKASUGI, Kazuma YAMAMOTO, Shinji MIYAZAKI, Munirathna PADMANABAN, Srinivasan CHAKRAPANI
  • Publication number: 20140127630
    Abstract: The present invention provides a silicon oxynitride film formation method capable of reducing energy cost, and also provides a substrate equipped with a silicon oxynitride film formed thereby. This method comprises the steps of: casting a film-formable coating composition containing a polysilazane compound on a substrate surface to form a coat; drying the coat to remove excess of the solvent therein; and then irradiating the dried coat with UV light at a temperature lower than 150° C.
    Type: Application
    Filed: June 22, 2011
    Publication date: May 8, 2014
    Applicant: AZ Electronic Materials USA Corp.
    Inventors: Ninad Shinde, Tatsuro Nagahara, Yusuke Takano
  • Patent number: 8715918
    Abstract: Thick film photoresist compositions are disclosed.
    Type: Grant
    Filed: September 25, 2007
    Date of Patent: May 6, 2014
    Assignee: AZ Electronic Materials USA Corp.
    Inventors: Medhat A. Toukhy, Margareta Paunescu
  • Patent number: 8697336
    Abstract: The present invention provides a composition for forming a bottom anti-reflective coating, and also provides a photoresist pattern formation method employing that composition. The composition gives a bottom anti-reflective coating used in a lithographic process for manufacturing semiconductor devices, and the coating can be developed with a developing solution for photoresist. The composition contains a solvent, a polymer having a condensed polycyclic aromatic group, and a compound having a maleimide derivative or a maleic anhydride derivative. The composition may further contain a photo acid generator or a crosslinking agent.
    Type: Grant
    Filed: December 15, 2011
    Date of Patent: April 15, 2014
    Assignee: AZ Electronic Materials USA Corp.
    Inventors: Shigemasa Nakasugi, Kazuma Yamamoto, Yasushi Akiyama, Shinji Miyazaki, Munirathna Padmanaban, Srinivasan Chakrapani
  • Patent number: 8663906
    Abstract: The present invention provides a composition for forming a fine pattern with high dry etching resistance and a method for forming the fine pattern. The composition for fine pattern formation containing: a resin containing a repeating unit having a silazane bond; and a solvent as well as a method for fine pattern formation using the same.
    Type: Grant
    Filed: September 12, 2008
    Date of Patent: March 4, 2014
    Assignee: AZ Electronic Materials USA Corp.
    Inventors: Ralph R Dammel, Wen-Bing Kang, Yasuo Shimizu, Tomonori Ishikawa
  • Publication number: 20140030661
    Abstract: [Object] To provide a top anti-reflection coating composition equal or superior to known products in film-formability, in refractive index, in temporal stability and in safety; and also to provide a pattern formation method employing that. [Means] A top anti-reflection coating composition comprising a solvent, an alkylsulfonic acid having 10 to 18 carbon atoms, and a fluorine-containing polymer having a weight average molecular weight of 300000 to 800000 and represented by the formula (1): -Ax-By- (1). In the formula (1), A is a repeating unit represented by the formula (A): (R is a fluorine-containing alkylene group having 1 to 40 carbon atoms or R is a fluorine-containing alkylene group having 2 to 100 carbon atoms and an ether bond); B is a repeating unit capable of combining with A to form a copolymer; x and y are numbers indicating the polymerization ratios, provided that x is not equal to 0; and A and B may randomly combine with each other or may form blocks.
    Type: Application
    Filed: April 11, 2012
    Publication date: January 30, 2014
    Applicant: AZ ELECTRONIC MATERIALS USA CORP.
    Inventors: Takayuki Sao, Tomohide Katayama