Abstract: [Object] To provide a coating composition excellent in coatability and free from viscosity increase caused by degradation over time, and also to provide a hardened film-formation method employing that. [Means] The present invention provides a coating composition comprising: a siloxane resin having silanol groups or alkoxysilyl groups, and a polyol having hydroxyl groups at both ends of a straight 2 to 5 carbon atom hydrocarbon chain. This coating composition enables to form a hardened film of high transparency, of high insulation and of low dielectricity.

Abstract: The invention relates to a photoimageable antireflective coating composition capable of forming a pattern by development in an aqueous alkaline solution, comprising, (i) a polymer A soluble in a coating solvent and comprises a chromophore, a crosslinking moiety, and optionally a cleavable group which under acid or thermal conditions produces a functionality which aids in the solubility of the polymer in an aqueous alkaline solution and; (ii) at least one photoacid generator; (iii) a crosslinking agent; (iv) optionally, a thermal acid generator; (v) a polymer B which is soluble in an aqueous alkaline solution prior to development, where polymer B is non-miscible with polymer A and soluble in the coating solvent, and; (vi) a coating solvent composition, and (vii) optionally, a quencher. The invention also relates to a process for imaging the antireflective coating.

Abstract: The present invention relates to an antireflective coating composition comprising a crosslinking agent, a polymer comprising at least one chromophore group and at least one hydroxyl and/or a carboxyl group, and an additive, further where the additive has structure 1 and comprises at least one arylene-hydroxyl moiety, where Y is selected from an carboxylate anion or sulfonate anion, R1, R2, and R3 are independently selected from unsubstituted C1-C8 alkyl, substituted C1-C8 alkyl, aryl and arylene-hydroxyl; X1, X2, and X3 are independently selected from direct valence bond and C1-C8 alkylene group, and, n=1, 2 or 3. The invention further relates to a process for using the composition.

Abstract: The present invention provides a pattern formation method capable of preventing formation of surface defects. In the method, a resist surface after subjected to exposure is coated with an acidic film and then subjected to heating treatment. This method is suitably adopted in a process employing liquid immersion lithography and/or light of short wavelength, such as ArF excimer laser beams, for producing a very fine pattern.

Abstract: Provided is a composition for forming a low-refractive-index film, which exhibits an excellent antireflective function even when applied in a single layer and does not affect the environment, and which is characterized by comprising (A) an inorganic polysilazane and (B) at least one organic polymer selected from a silazane-containing organic polymer, a siloxazane-containing organic polymer and a ureasilazane-containing organic polymer, wherein the ratio (A):(B) is 40:60-17:83 by weight.

Abstract: [Problem] To provide a method capable of forming an insulating film having homogeneous and high bulk density and less suffering defects. [Means for solving] A substrate surface is coated with a silicon dioxide dispersion containing silicon dioxide fine particles, a polymer, a surfactant and a dispersion medium; and then further coated with a polysilazane composition; and thereafter heated to form an insulating film.

Abstract: The present invention relates to an underlayer composition comprising a polymer, an organic titanate compound and optionally a thermal acid generator, where the polymer comprises at least one fluoroalcohol group and at least one epoxy group. The invention also relates to a process for using this underlayer material as an antireflective coating composition and/or a hard mask for pattern transfer.

Abstract: This invention relates to a dipping solution used in a process for producing a siliceous film. The present invention provides a dipping solution and a siliceous film-production process employing the solution. The dipping solution enables to form a homogeneous siliceous film even in concave portions of a substrate having concave portions and convex portions. The substrate is coated with a polysilazane composition, and then dipped in the solution before fire. The dipping solution comprises hydrogen peroxide, a foam-deposit inhibitor, and a solvent.

Abstract: The present invention provides a polysilazane-containing composition capable of forming a dense siliceous film more rapidly and at a lower temperature than known polysilazane-containing composition. In a process for forming the siliceous film, the composition comprising a polysilazane compound, a particular amine compound and a solvent is coated on a substrate and converted into a siliceous substance. The particular amine compound preferably contains two amine groups separated from each other at the distance corresponding to five C—C bonds or more, and the amine groups preferably have hydrocarbon substituent groups.

Abstract: The invention relates to an antireflective coating composition for a photoresist layer comprising a polymer, a crosslinking agent and an acid generator, where the polymer comprises at least one unit of structure 1, where, X is a linking moiety selected from a nonaromatic (A) moiety, aromatic (P) moiety and mixture thereof, R? is a group of structure (2), R? is independently selected from hydrogen, a moiety of structure (2), Z and W—OH, where Z is a (C1-C20) hydrocarbyl moiety and W is a (C1-C20) hydrocarbylene linking moiety, and, Y? is independently a (C1-C20) hydrocarbylene linking moiety, where structure (2) is where R1 and R2 are independently selected from H and C1-C4alkyl and L is an organic hydrocarbyl group. The invention further relates to a process for imaging the antireflective coating composition.

Abstract: Developable bottom antireflective coating compositions are provided.

Abstract: A polymer comprising a siloxane polymer having at least one Si—OH group and at least one Si—OR group, where R is condensation stabilizing group optionally having a reactive functional group, wherein the siloxane polymer, when placed into a solvent, has a weight average molecular weight increase of less than or equal to 50% after aging for one week at 40° C. as measured by GPC is provided.

Abstract: A positive photosensitive siloxane composition containing: a polysiloxane (Ia), which is obtained by hydrolyzing and condensing the silane compound represented by RSi(OR1)3 in general formula (1) and the silane compound represented by Si(OR1)4 in general formula (2) in the presence of a basic catalyst, and a pre-baked film of which has a dissolution rate of 1,000 ?/second or less in a 5 wt % TMAH aqueous solution; a polysiloxane (Ib), which is obtained by hydrolyzing and condensing at least the silane compound represented by general formula (1) in the presence of an acid or basic catalyst, and a pre-baked film of which has a dissolution rate of 100 ?/second or more in a 2.38 wt % TMAH aqueous solution; and a diazonaphthoquinone derivative and solvent.

Abstract: [Problem] To provide a method for forming an isolation structure having a low shrinkage percentage and a low tensile stress. [Means for Solving] A first polysilazane composition containing a porogen is cast on the surface of a substrate to form a coat, and then the coat is fired to form a porous siliceous film having a refractive index of 1.3 or less. Thereafter, the surface of the porous siliceous film is soaked with a second polysilazane composition, and then fired to form an isolation structure of a siliceous film having a refractive index of 1.4 or more.

Abstract: This invention relates generally to silicon based photoresist compositions that can be used in forming low k dielectric constant materials suitable for use in electronic devices, methods of their use and the electronic devices made therefrom.

Abstract: A novel antireflective coating composition is provided, said antireflective coating composition comprising a) a compound of formula 1, b) a thermal acid generator, (c) at least one polymer, wherein U1 and U2 are independently a C1-C10 alkylene group; V is selected from a C1-C10 alkylene, arylene and aromatic alkylene; W is selected from H, C1-C10 alkyl, aryl, alkylaryl and V—OH; Y is selected from H, W, and U3C(O)OW, wherein U3 is independently a C1-C10 alkylene group, and m is 1 to 10. Also provided are methods using said compositions as antireflective coatings for substrates in lithographic processes.

Abstract: There is provided a method for forming a superfine pattern, which can simply produce a superfine pattern with high mass productivity. The method comprises the steps of forming a first convex pattern, on a film to be treated, forming a spacer formed of a silazane-containing resin composition on the side wall of the convexes constituting the first convex pattern, and forming a superfine pattern using as a mask the spacer or a resin layer disposed around the spacer. The spacer is formed by curing an evenly coated resin composition only in its part around the first convex pattern. According to this method for pattern formation, unlike the conventional method, a superfine pattern can be formed.

Abstract: The invention relates to an antireflective coating composition comprising a crosslinker and a crosslinkable polymer capable of being crosslinked by the crosslinker, where the crosslinkable polymer comprises a unit represented by structure (1): A-Bn??(1) where A is a fused aromatic ring and B has a structure (2), where R1 is C1-C4alkyl and R2 is C1-C4alkyl. The invention further relates to a process for forming an image using the composition.

Abstract: The present invention provides a silicon oxynitride film formation method capable of reducing energy cost, and also provides a substrate equipped with a silicon oxynitride film formed thereby. This method comprises the steps of: casting a film-formable coating composition containing a polysilazane compound on a substrate surface to form a coat; drying the coat to remove excess of the solvent therein; and then irradiating the dried coat with UV light at a temperature lower than 150° C.

Abstract: The present invention provides a rinse solution for lithography and a pattern formation method using the solution. They can improve prevention of both the pattern collapse and the melting at the same time. The solution contains water and a particular nitrogen-containing compound having an organic group, such as, alkyl amine or the like. The rinse solution may further contain a nonionic surfactant, if necessary.