Abstract: A plasma processing apparatus (5) comprises an outer shell (51) which is provided with a reaction chamber (52) in the interior, a bottom electrode which is arranged in the reaction chamber (52) and a cantilever support device (53) which goes through the outer shell (51) and supports the bottom electrode. The cantilever support device (53) is pivotally mounted on the side wall of the outer shell (51) and can rotate in the outer shell (51). The plasma processing apparatus (5) further comprises a locating device so as to selectively fix the relative position of the cantilever support device (53) and the outer shell (51).

Abstract: Embodiments of the invention provide a mechanical chuck and a plasma processing apparatus.

Abstract: The present invention discloses an inductively coupled coil and an inductively coupled plasma device using the same. The inductively coupled coil comprises an internal coil and an exterior coil which are respective from each other and coaxially arranged, internal coil comprising a plurality of internal respective branches having the same configurations which are nested together, the plurality of internal respective branches being arranged symmetrically with respect to an axis of the inductively coupled coil; the external coil comprising a plurality of external respective branches having the same configurations which are nested together, the plurality of external respective branches being arranged symmetrically with respect to the axis of the inductively coupled coil. The inductively coupled coil is located on the reaction chamber of the inductively coupled plasma device and is connected to a RF source.

Abstract: Embodiments of the invention provide a magnetron and a magnetron sputtering device, including an inner magnetic pole and an outer magnetic pole with opposite polarities. Both the inner magnetic pole and the outer magnetic pole comprise multiple spirals. The spirals of the outer magnetic pole surround the spirals of the inner magnetic pole, and a gap therebetween. In addition, the gap has different widths in different locations from a spiral center to an edge. Moreover, both the spirals of the outer magnetic pole and the spirals of the inner magnetic pole follow a polar equation: r=a?n+b(cos ?)m+c(tan ?)k+d, 0<=n<=2, 0<=m<=2, c=0 or k=0. Because the gap between the inner magnetic pole and the outer magnetic pole has the different widths in a spiral discrete direction, width sizes of the gap in the different locations can be changed to control magnetic field strength distribution in a plane, thus adjusting uniformity of a membrane thickness.

Abstract: Embodiments of the invention provide a bearing device and a plasma processing apparatus. According to at least one embodiment, the bearing device includes a base, a base driving mechanism, a pressing ring and a baffle ring.

Abstract: Embodiments of the invention relate to a reaction chamber and a plasma processing apparatus, which include a chamber body, a dielectric window and a power supply unit, the dielectric window is provided above and hermetically connected with the chamber body, and provided with plural sets of coils arranged at intervals in a vertical direction and wound around the dielectric window at an outer side thereof, and the power supply unit supplies power to the plural sets of coils. In the reaction chamber and the plasma processing apparatus, plasma can be distributed evenly and have an increased density in the reaction chamber, thereby improving uniformity and efficiency of the process; meanwhile, effective power for exciting plasma can be improved, and temperature rise and temperature gradient of the dielectric window during the process can be lowered, so as to prevent the dielectric window from cracking, and prolong service life of the dielectric window.

Abstract: A gas distribution apparatus for a plasma processing equipment is provided. The gas distribution apparatus includes a support plate (3) and a showerhead electrode (5) that are secured together parallelly to define a chamber for gas distribution. A first gas distribution plate (4) is arranged in the chamber horizontally. On an upper surface of the gas distribution plate (4), at least one circumferential gas-flow groove (41) around its axis and a plurality of radial gas-flow grooves (42) communicating with the at least one circumferential gas-flow groove (41) is arranged. A plurality of axial viahole (43) are formed in the at least one circumferential gas-flow groove (41) and the plurality of radial gas-flow grooves (42). The gas distribution apparatus can achieve a uniform gas distribution in the plasma processing equipment.

Abstract: The present invention provides a cassette positioning device and a semiconductor processing apparatus. The cassette positioning device includes: a positioning baseplate arranged horizontally and connected with the lifting device; a rotatable positioning, plate, which is located on the positioning baseplate, has one end rotatably connected with one end of the positioning baseplate, and is provided thereon with a positioning assembly; and a support column arranged under the rotatable positioning plate. The support column and the positioning baseplate can move relatively in the vertical direction, such that the rotatable positioning plate is pushed up by the support column and rotates to be inclined relatively to the positioning baseplate when the support column rises to a preset highest position relatively to the positioning baseplate, and the rotatable positioning plate and the positioning baseplate are stacked on the support column in parallel when the support column is located at a preset lowest position.

Abstract: Embodiments of the invention provide a chamber for semiconductor processing, which includes a chamber body and an isolation window, the chamber body being of a tubby structure and having an upper end which is an open end, and the isolation window being arranged at the open end of the chamber body and used for sealing the chamber. The chamber further includes an isolation window fixing structure used for fixing the isolation window at the open end of the chamber body and a first fixing part and a second fixing part connected with each other, the first fixing part being fixedly connected with an edge area of an upper surface of the isolation window, and the second fixing part being fixedly connected with the chamber body.

Abstract: Embodiments of the invention provide a process chamber and a semiconductor processing apparatus. According to at least one embodiment, the process chamber includes a reaction compartment, a gas introducing system and a wafer transfer device. The reaction compartment is provided in the process chamber and used for performing a process on a wafer, the gas introducing system is used for providing processing gas to the reaction compartment, and the wafer transfer device is used for transferring the wafer into the reaction compartment. A lining ring assembly is provided in the reaction compartment, and is configured such that a flow uniformizing cavity is formed between the lining ring assembly itself and an inner side wall of the reaction compartment, so as to uniformly transport the processing gas, from the gas introducing system, into the reaction compartment through the flow uniformizing cavity.

Abstract: Embodiments of the invention provide a substrate etching method, which includes: a deposition operation for depositing a polymer on a side wall of a silicon groove, an etching operation for etching the side wall of the silicon groove, and repeating the deposition operation and the etching operation at least twice. In the process of completing all cycles of the etching operation, a chamber pressure of a reaction chamber is decreased from a preset highest pressure to a preset lowest pressure according to a preset rule. The substrate etching method, according to various embodiments of the invention, avoid the problem of damaging the side wall, thereby making the side wall smooth.

Abstract: Provided is a magnetron source, which comprises a target material, a magnetron located thereabove and a scanning mechanism connected to the magnetron for controlling the movement of the magnetron above the target material. The scanning mechanism comprises a peach-shaped track, with the magnetron movably disposed thereon; a first driving shaft, with the bottom end thereof connected with the origin of the polar coordinates of the peach-shaped track, for driving the peach-shaped track to rotate about the axis of the first driving shaft; a first driver connected to the first driving shaft for driving the first driving shaft to rotate; and a second driver for driving the magnetron to move along the peach-shaped track via a transmission assembly. A magnetron sputtering device including the magnetron and a method for magnetron sputtering using the magnetron sputtering device are also provided.

Abstract: A substrate etching method and a substrate processing device, the substrate etching method includes: S1: placing a substrate to be processed into a reaction chamber; S2: supplying etching gas into the reaction chamber; S3: turning on an excitation power supply to generate plasma in the reaction chamber; S4: turning on a bias power supply to apply bias power to the substrate; S5: turning off the bias power supply, and meanwhile, starting to supply deposition gas into the reaction chamber; S6: stopping supply of the deposition gas into the reaction chamber, and meanwhile, turning on the bias power supply; S7: repeating steps S5-S6, until the etching process is completed. In the whole etching process, the etching operation is always performed, and the deposition operation is performed sometimes.

Abstract: Embodiments of the invention provide a substrate etching method, which includes: a deposition operation for depositing a polymer on a side wall of a silicon groove, an etching operation for etching the side wall of the silicon groove, and repeating the deposition operation and the etching operation at least twice. In the process of completing all cycles of the etching operation, a chamber pressure of a reaction chamber is decreased from a preset highest pressure to a preset lowest pressure according to a preset rule. The substrate etching method, according to various embodiments of the invention, avoid the problem of damaging the side wall, thereby making the side wall smooth.

Abstract: Embodiments of the invention provide a tray device, a reaction chamber, and a MOCVD apparatus including the reaction chamber. According to an embodiment, the tray device includes a large tray, a rotating shaft, a small tray, and a supporting disk. The rotating shaft is connected with the center of the large tray and drives the large tray to rotate about the rotating shaft. The large tray is provided with a tray groove for placing the small tray. The supporting disk is located under the large tray. A sliding mechanism is provided between the supporting disk and the small tray, so that when revolving along with the large tray, the small tray spins under the function of the sliding mechanism.

Abstract: A substrate etching method and a substrate processing device, the substrate etching method includes: S1: placing a substrate to be processed into a reaction chamber; S2: supplying etching gas into the reaction chamber; S3: turning on an excitation power supply to generate plasma in the reaction chamber; S4: turning on a bias power supply to apply bias power to the substrate; S5: turning off the bias power supply, and meanwhile, starting to supply deposition gas into the reaction chamber; S6: stopping supply of the deposition gas into the reaction chamber, and meanwhile, turning on the bias power supply; S7: repeating steps S5-S6, until the etching process is completed. In the whole etching process, the etching operation is always performed, and the deposition operation is performed sometimes.

Abstract: A gas distribution apparatus for a plasma processing equipment is provided. The gas distribution apparatus includes a support plate (3) and a showerhead electrode (5) that are secured together parallelly to define a chamber for gas distribution. A first gas distribution plate (4) is arranged in the chamber horizontally. On an upper surface of the gas distribution plate (4), at least one circumferential gas-flow groove (41) around its axis and a plurality of radial gas-flow grooves (42) communicating with the at least one circumferential gas-flow groove (41) is arranged. A plurality of axial viahole (43) are formed in the at least one circumferential gas-flow groove (41) and the plurality of radial gas-flow grooves (42). The gas distribution apparatus can achieve a uniform gas distribution in the plasma processing equipment.

Abstract: The present invention provides a method for manufacturing a semiconductor structure, which comprises: providing an SOI substrate, forming a gate structure on the SOI substrate; etching an SOI layer of the SOI substrate and a BOX layer of the SOI substrate on both sides of the gate structure to form trenches, the trenches exposing the BOX layer and extending partly into the BOX layer; forming sidewall spacers on sidewalls of the trenches; forming inside the trenches a metal layer covering the sidewall spacers, wherein the metal layer is in contact with the SOI layer which is under the gate structure. Accordingly, the present invention further provides a semiconductor structure formed according to aforesaid method.

Abstract: Provided is a magnetron source, which comprises a target material, a magnetron located thereabove and a scanning mechanism connected to the magnetron for controlling the movement of the magnetron above the target material. The scanning mechanism comprises a peach-shaped track, with the magnetron movably disposed thereon; a first driving shaft, with the bottom end thereof connected with the origin of the polar coordinates of the peach-shaped track, for driving the peach-shaped track to rotate about the axis of the first driving shaft; a first driver connected to the first driving shaft for driving the first driving shaft to rotate; and a second driver for driving the magnetron to move along the peach-shaped track via a transmission assembly. A magnetron sputtering device including the magnetron and a method for magnetron sputtering using the magnetron sputtering device are also provided.

Abstract: The present invention provides a hot plate and substrate processing equipment using the same, wherein the hot plate comprises a central sub hot plate and at least one outer ring sub hot plate located around the central sub hot plate; thermal insulation parts are provided between the central sub hot plate and the outer ring sub hot plate and between two adjacent outer ring sub hot plates, so that the heat conduction between the adjacent sub hot plates can be effectively prevented or reduced by means of the thermal insulation parts. The hot plate and the substrate processing equipment using the same provided in the present invention can effectively compensate for the heat losses in the edge region of the substrate, so as to keep the heating rate the same in each region of the substrate.