Abstract: Materials and methods for modifying semiconducting substrate surfaces in order to dramatically change surface energy are provided. Preferred materials include perfluorocarbon molecules or polymers with various functional groups. The functional groups (carboxylic acids, hydroxyls, epoxies, aldehydes, and/or thiols) attach materials to the substrate surface by physical adsorption or chemical bonding, while the perfluorocarbon components contribute to low surface energy. Utilization of the disclosed materials and methods allows rapid transformation of surface properties from hydrophilic to hydrophobic (water contact angle 120° and PGMEA contact angle) 70°. Selective liquiphobic modifications of copper over Si/SiOx, TiOx over Si/SiOx, and SiN over SiOx are also demonstrated.

Abstract: The materials and methods disclosed can be used for applications such as temporary bond and debond of semiconductor and display substrates. These materials have sufficiently low melt rheologies to be used as a bonding layer and can crosslink/cure to allow for reduction in material flow over long periods of time. This class of materials also incorporates the ability to be used as a single-layer system for debonding purposes and typically uses laser debonding for its release mechanism. These materials also allow for solvent cleanability using very mild acidic conditions instead of the typical harsh conditions used on curable layers.

Abstract: New lithographic compositions for use as EUV adhesion layers are provided. The present invention provides methods of fabricating microelectronics structures using those compositions as well as structures formed by those methods. The method involves utilizing an adhesion layer immediately below the photoresist layer. The adhesion layer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate, such as an alpha-carbon, spin-on carbon, spin-on silicon hardmask, metal hardmask, or deposited silicon layer. The preferred adhesion layers are formed from spin-coatable, polymeric compositions. The inventive method improves adhesion and reduces or eliminates pattern collapse issues.

Abstract: Lithographic compositions for use as wet-removable silicon gap fill layers are provided. The method of using these compositions involves utilizing a silicon gap fill layer over topographic features on a substrate. The silicon gap fill layer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate. The preferred silicon gap fill layers are formed from spin-coatable, polymeric compositions with high silicon content, and these layers exhibit good gap fill and planarization performance and high oxygen etch resistance.

Abstract: Materials and methods to immobilize photoacid generators on semiconducting substrates are provided. PAG-containing monomers are copolymerized with monomers to allow the polymer to bind to a surface, and optionally copolymerized with monomers to enhance solubility to generate PAG-containing polymers. The PAG-containing monomers can be coated onto a surface, where the immobilized PAGs can then be used to pattern materials coated on top of the immobilized PAGs, allowing direct patterning without the use of a photoresist, thereby reducing process steps and cost. The disclosed materials and processes can be used to produce conformal coatings of controlled thicknesses.

Abstract: Novel polyketanil-based compositions for use as a laser-releasable composition for temporary bonding and laser debonding processes are provided. The inventive compositions can be debonded using various UV lasers, at wavelengths from about 300 nm to about 360 nm, leaving behind little to no debris. The layers formed from these compositions possess good thermal stabilities and are resistant to common solvents used in semiconductor processing. The compositions can also be used as build-up layers for redistribution layer formation.

Abstract: Materials and methods for modifying semiconducting substrate surfaces in order to dramatically change surface energy are provided. Preferred materials include perfluorocarbon molecules or polymers with various functional groups. The functional groups (carboxylic acids, hydroxyls, epoxies, aldehydes, and/or thiols) attach materials to the substrate surface by physical adsorption or chemical bonding, while the perfluorocarbon components contribute to low surface energy. Utilization of the disclosed materials and methods allows rapid transformation of surface properties from hydrophilic to hydrophobic (water contact angle 120° and PGMEA contact angle) 70°. Selective liquiphobic modifications of copper over Si/SiOx, TiOx over Si/SiOx, and SiN over SiOx are also demonstrated.

Abstract: A process and electronic hardware and software system for rapidly heating and cooling an active sensing layer of a gas sensor is provided. A series of high-energy pulses is run through a CNT electrically-active layer, heating the layer to varying temperatures. The influence by various gases on the electrical conductivity of the layer can be used to identify gases (e.g., water vapor, alcohol, methane, O2, CO2, and CO). Advantageously, the same structure can also be used as a nanoheater, either within or outside the context of the gas sensor. The device can acquire a unique gas spectra in seconds, and thus accurately determine gas type and mixtures of gases based on a library of known spectra.

Abstract: New lithographic compositions for use as EUV silicon hardmask layers are provided. The present invention provides methods of fabricating microelectronic structures and the resulting structures formed thereby using EUV lithographic processes. The method involves utilizing a silicon hardmask layer immediately below the photoresist layer. The silicon hardmask layer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate. The preferred silicon hardmask layers are formed from spin-coatable, polymeric compositions. The inventive method improves adhesion and reduces or eliminates pattern collapse issues.

Abstract: The present invention is broadly concerned with novel directed self-assembly compositions, processes utilizing those compositions, and the resulting structures that are formed. The composition comprises a block copolymer of polystyrene and a polymethylmethacrylate block with polylactic acid side chains (“PS-b-P(MMA-LA)”). The block copolymer is capable of crosslinking and micro-phase separating into lines and spaces measuring about 10-nm or smaller with sub-20 nm L0 capability. Additionally, PS-b-P(MMA-LA) can be thermally annealed without a top-coat for simpler processing than the prior art. The polylactic acid side chains also increase the etch rate of the poly(methylmethacrylate) block when exposed to oxygen plasma, as well as lower the Tg.

Abstract: Novel thermoplastic polyhydroxyether-based compositions for use as a laser-releasable composition for temporary bonding and laser debonding processes are provided. The inventive compositions can be debonded using various UV lasers, leaving behind little to no debris. The layers formed from these compositions possess good thermal stabilities and are soluble in commonly-used organic solvents (e.g., cyclopentanone). The compositions can also be used as build-up layers for RDL formation.

Abstract: Novel block copolymers (“BCPs”) having non-random distributions of comonomers within at least one of the blocks and methods of using those BCPs in directed self-assembly (“DSA”) processes are provided. The non-random (e.g., gradient-creating) distributions can be customized in order to concentrate the desired comonomer properties in predetermined areas of the BCP. These BCPs can achieve perpendicular orientation with simple annealing and offer superior long-range ordering and lower defectivity when compared to prior art BCPs. These BCPs can be incorporated into compositions that simultaneously offer the benefits of high-? and rapid thermal-annealing kinetics while maintaining similar or improved guide process windows when compared to prior art BCPs.

Abstract: Planarizing and spin-on-carbon (SOC) compositions that fill vias and/or trenches on a substrate while planarizing the surface in a single thin layer coating process are provided. The compositions can planarize wide ranges of substrates with vias or trenches of from about 20 nm to about 220 nm wide, and up to about 700 nm deep. These extraordinary properties come from the low molecular weight of the polymers used in the materials, thermally-labile protecting groups on the polymers, and a delayed crosslinking reaction.

Abstract: An environmentally sealed connector for connecting a spring-loaded terminal to a flexible circuit includes a spring-loaded terminal and a connector cap having a terminal cavity receiving a portion of the spring-loaded terminal therein in order to electrically couple the spring-loaded terminal to the flexible circuit. A connector base is releasably coupled to the connector cap and covers the terminal cavity and the portion of the spring-loaded terminal therein. An elastic member is disposed between the connector cap and the connector base in sealing engagement therewith and surrounds the terminal cavity and the portion of the spring-loaded terminal.

Abstract: Directed self-assembly (DSA) using block copolymers (BCPs) is emerging as a viable alternative to photolithography for creating features 10 nm and smaller. Block copolymers with balanced surface energy between the polymer blocks, tunable ?, and tunable glass transition temperatures (Tg) have been formulated. The block copolymers can achieve perpendicular orientation by simple thermal annealing due to the surface energy balance between the polymer blocks, which allows avoiding solvent annealing or top-coat. The ? value can be tuned up to achieve L0 as low as 12 nm for lamellar-structured BCPs and hole/pillar size as small as 6 nm for cylinder-structured BCPs. The Tg of the BCPs can also be tuned to lower than those of PS-b-PMMA standards. The enhanced polymer chain mobility resulting from the decreased Tg of the block copolymer may help with improving the kinetics of BCP self-assembly during the thermal annealing.

Abstract: The present invention provides stencil-based processes for fan-out wafer-level packaging (“FOWLP”) that addresses the limitations associated with prior art over-molding of dies. In the inventive process, a temporary carrier is coated with a release layer and curable adhesive backing layer. A die stencil film is then laminated to the coated carrier, and the dies are placed inside pre-formed cavities created in the laminated stencil. The gaps between the dies and the stencil are filled with a curable polymeric material, and a redistribution layer is constructed according to conventional processes. This process results in better repeatability, lower bowing in the carrier, and enhanced downstream processing.

Abstract: New carbon nanotube (CNT) compositions and methods of using those compositions are provided. Raw carbon nanotubes are mechanically dispersed via milling into multifunctional alcohols and mixtures of multifunctional alcohols and solvents to form pastes or dispersions that are viscous enough to be printed using standard means such as screen printing. These pastes or dispersions are stable in both dilute and concentrated solution. The invention allows films to be formed on substrates (e.g., plastics, glass, metals, ceramics).

Abstract: Compositions for directed self-assembly (DSA) patterning techniques are provided. Methods for directed self-assembly are also provided in which a DSA composition comprising a block copolymer (BCP) is applied to a substrate and then self-assembled to form the desired pattern. The block copolymer includes at least two blocks and is selected to have a high interaction parameter (?). The BCPs are able to form perpendicular lamellae by simple thermal annealing on a neutralized substrate, without a top coat. The BCPs are also capable of micro-phase separating into lines and spaces measuring at 10 nm or smaller, with sub-20-nm L0 capability.

Abstract: The present invention is broadly concerned with materials, processes, and structures that allow an underlayer to be imaged directly using conventional lithography, thus avoiding the photoresist processing steps required by prior art directed self-assembly (DSA) processes. The underlayers can be tailored to favor a selected block of the DSA block co-polymers (BCP), depending on the pattern, and can be formulated either to initially be neutral to the BCP and switch to non-neutral after photoexposure, or can initially be non-neutral to the BCP and switch to neutral after exposure. These materials allow fast crosslinking to achieve solvent resistance and possess good thermal stability.