Abstract: The present invention relates to a composite sintering materials using a carbon nanotube (including carbide nano particles, hereinafter the same) and a manufacturing method thereof, the method comprises the steps of: combining or generating carbon 5 nanotubes in metal powers, a compacted product, or a sintered product; growing and alloying the carbon nanotubes by compacting or sintering the metal powers, the compacted product, or the sintered product; and strengthening the mechanical characteristics by repeatedly performing the sintering process and the combining process or the generating process of the carbon nanotubes.

Abstract: Disclosed are abrasive particles, a method for manufacturing the abrasive particles, and a method for manufacturing a Chemical Mechanical Polishing (CMP) slurry. The method for manufacturing abrasive particles for the CMP slurry includes preparing a raw material precursor, drying the raw material precursor, and calcining the dried raw material precursor using a calcination furnace where a gas atmosphere having relatively less oxygen in comparison with an air atmosphere is created.

Abstract: Disclosed is a polishing slurry, particularly, a slurry for chemical mechanical polishing, which is used in a chemical mechanical polishing process for flattening a semiconductor laminate. More particularly, the present invention provides a method of producing a slurry which has high removal selectivity to a nitride layer used as a barrier film in a shallow trench isolation CMP process needed to fabricate ultra highly integrated semiconductors of 256 mega D-RAM or more (Design rule of 0.13 ?m or less) and which decreases the occurrence of scratches on a flattened surface, and a method of polishing a substrate using the same.

Abstract: Disclosed is a polishing slurry, particularly, a slurry for chemical mechanical polishing, which is used in a chemical mechanical polishing process for flattening a semiconductor laminate. More particularly, the present invention provides a method of producing a slurry which has high removal selectivity to a nitride layer used as a barrier film in a shallow trench isolation CMP process needed to fabricate ultra highly integrated semiconductors of 256 mega D-RAM or more (Design rule of 0.13 ?m or less) and which decreases the occurrence of scratches on a flattened surface, and a method of polishing a substrate using the same.

Abstract: A system and process for removing contaminants from wastewater where the wastewater is treated into a cleaned water that can be reused or discharged into the environment. The wastewater is transported through purification sections, depending on the system including several of the following: pre-treatment via screening and weirs to remove debris and certain heavy solids; a second pretreatment via a sump; strainer; conductivity solution injection system and electrolytic coagulation system; polymer injection system; inline mixers for mixing the polymer in the wastewater stream; retention tubes for providing residence time for the polymer to react in the wastewater stream; a multi-stage separation system comprised of a plurality of water separation compartments for consecutively separating contaminants from the wastewater stream by removing contaminants that float and heavy contaminants that settle to the bottom; and an ozone treatment system.

Abstract: A nozzle for spraying sublimable solid particles and preventing frost from forming at surfaces of the nozzle. The nozzle includes: a cleaning agent block for phase-changing a cleaning agent into a snow containing sublimable solid particles; a nozzle block for growing the cleaning agent snow through adiabatic expansion and spraying the grown cleaning agent snow onto a surface of an object; a carrier gas block for supplying a carrier gas to the nozzle block to mix with the cleaning agent snow; and a heater for heating at least a portion of the carrier gas supplied from the carrier gas supply source. Fine dry ice particles and liquid CO2, passing through a solenoid valve from a CO2 reservoir tank and a pressure drop of a flow rate regulation valve, are introduced into the spray nozzle and then mixed with the carrier gas, such as N2 or purified air, and discharged.

Abstract: Disclosed herein is a polishing slurry for chemical mechanical polishing. The polishing slurry comprises polishing particles, which have a particle size distribution including separated fine and large polishing particle peaks. The polishing slurry also comprises polishing particles, which have a median size of 50-150 nm. The present invention provides the slurry having an optimum polishing particle size, in which the polishing particle size is controlled and which is useful to produce semiconductors having fine design rules by changing the production conditions of the slurry. The present invention also provides the polishing slurry and a method of producing the same, in which a desirable CMP removal rate is assured and scratches are suppressed by controlling a polishing particle size distribution, and a method of polishing a substrate.

Abstract: A nozzle for spraying sublimable solid particles and preventing frost from forming at surfaces of the nozzle. The nozzle includes: a cleaning agent block for phase-changing a cleaning agent into a snow containing sublimable solid particles; a nozzle block for growing the cleaning agent snow through adiabatic expansion and spraying the grown cleaning agent snow onto a surface of an object; a carrier gas block for supplying a carrier gas to the nozzle block to mix with the cleaning agent snow; and a heater for heating at least a portion of the carrier gas supplied from the carrier gas supply source. Fine dry ice particles and liquid CO2, passing through a solenoid valve from a CO2 reservoir tank and a pressure drop of a flow rate regulation valve, are introduced into the spray nozzle and then mixed with the carrier gas, such as N2 or purified air, and discharged.

Abstract: A continuous feed injection unit used for example for injection and removal of continuous well string from wells operates in a dual speed configuration. The unit comprises a first hydraulic motor, a second hydraulic motor, cooperating continuous well string gripping chains connected to be driven by the first and second hydraulic motors, a hydraulic power supply connected to provide pressurized fluid to the first and second hydraulic motors and a control system for the hydraulic power supply. The control system for the hydraulic power supply has a motor speed control valve with at least a first and second operating configuration, the first operating configuration providing power fluid to the first and second hydraulic motors in parallel and the second operating configuration providing power fluid to the first and second hydraulic motors in series. The hydraulic power supply may be a conventional power tong hydraulic supply.

Abstract: Disclosed herein is a polishing slurry and a method of producing the same. The polishing slurry has high selectivity in terms of a polishing speed of an oxide layer to that of a nitride layer used in CMP of an STI process which is essential to produce ultra highly integrated semiconductors having a design rule of 256 mega D-RAM or more, for example, a design rule of 0.13 ?m or less. A method and a device for pre-treating polishing particles, a dispersing device and a method of operating the dispersing device, a method of adding a chemical additive and an amount added, and a device for transferring samples are properly employed to produce a high performance nano ceria slurry essential to CMP for a process of producing ultra highly integrated semiconductors of 0.13 ?m or less, particularly, the STI process.

Abstract: A continuous well string injection unit and balancing system, in which the continuous well string injection unit is suspended using a sling connected to a pair of suspension points. The balancing system comprises a length-adjustable member connected to the rod injector at a third suspension point, and a controller for adjusting the length of the length-adjustable member.

Abstract: A microwave plasma generating apparatus (10) has a microwave cavity (20) coupled to a microwave source (22) by a wave guide (24). Within the cavity (20) is a reaction tube (30) defining a plasma cavity (40). A gas inlet manifold (50) is provided at the top of the reaction tube (30), which is formed so as to introduce plasma gas tangentially to the longitudinal axis of the plasma. Plasma gas is thus injected into the reaction tube (30) so that it flows in a swirled manner, that is, in the form of a vortex. This prevents overheating of the reaction tube (30).

Abstract: An apparatus for measuring ejection uniformity of a slit nozzle comprises a liquid distributor that distributes liquid for each predetermined interval with respect to a widthwise direction of the slit nozzle, the liquid being ejected from the slit nozzle; and a liquid measuring unit that measures an amount of liquid distributed by the liquid distributor.

Abstract: An apparatus for measuring withwise ejection uniformity of a slit nozzle comprises a plurality of oil pressure measuring units that are arranged in parallel in a widthwise direction of the slit nozzle so as to measure ejection pressure of fluid to be ejected from an ejection port of the slit nozzle, each oil pressure measuring unit having an oil-pressure detection surface facing the ejection port of the slit nozzle; and a control unit that measures ejection pressure applied to the oil pressure measuring unit so as to calculate the uniformity to display.

Abstract: The invention concerns an apparatus for cleaning the edge of a wafer that may be relatively simply constructed with low cost, and prevent the wafer from being re-contaminated by the edge cleaning, thus resulting in increase of the yield rate of wafers. The apparatus includes a cleaning agent ejection nozzle body provided on a side part of a chuck for ejecting a particulate cleaning agent (CO2 particles) towards the side and the edge portions of the wafer held and rotated by the chuck, and a nozzle body carriage for moving the nozzle body between rest and cleaning positions.

Abstract: Disclosed are a method of manufacturing an electrode for generating plasma, which is capable of improving durability of the electrode and reducing production costs of the electrode, an electrode structure, and an atmospheric pressure plasma apparatus using the same. The plasma electrode structure comprises a pair of electrodes isolated from each other, a plasma generating space formed between the pair of electrodes, and an oxide coating layer formed uniformly on at least one of surfaces of the pair of electrodes.

Abstract: The invention relates to an apparatus for heating an electrically conductive fluid, such as potable water, and to a method of heating the same. The heating apparatus includes a plurality of electrodes in an array, and a controller for selectively energizing the plurality of electrodes, in different combinations, to thereby adjust the electrical resistance observed across the electrode array, in order to maximize the current drawn by the apparatus.

Abstract: Disclosed herein is a polishing slurry for use in an STI CMP process, necessary for fabricating ultra highly integrated semiconductors of 256 mega D-RAM or more (Design rule of 0.13 ?m or less), which can polish wafers at a high removal rate, having an excellent the removal selectivity of oxide compared to nitride. The polishing slurry can be applied to various patterns required in the course of producing ultra highly integrated semiconductors, and thus excellent removal rate, removal selectivity, and within-wafer-nonuniformity (WIWNU), which indicates removal uniformity, as well as minimal occurrence of micro scratches, can be assured.