Abstract: A showerhead electrode assembly for a plasma reactor for processing semiconductor wafers includes a gas plate having a plurality of through holes for passage of gas. The top face or side of the gas plate is of smaller diameter than the bottom side or face of the gas plate. An acutely angled peripheral groove is formed between the top face of the gas plate, and the lower portion thereof, with the groove terminating at a band-like ledge with the top face and lower portion. A locking ring is provided by two identical semicircular sections, each of which include in a lower portion of an inside sidewall, respectively, an acutely angled peripheral groove for mating with the groove of the gas plate. A unitary circular support collar is formed with a circular channel in a bottom portion thereof.

Abstract: A platform for processing a substrate includes a first member and a second member. The first member includes a first support surface for supporting the substrate during processing. The second member includes a second support surface, which supports the first member thereon, and a third support surface, which is adapted to be supported in a processing chamber. The first and second members are releasably coupled together in a manner which permits unrestrained relative thermal expansion of the two members and also of the substrate. The platform is suitable for use in a processing reactor which includes a heater housing and an outer reactor housing. The heater housing encloses a heater assembly and provides a surface for supporting the platform during processing. The reactor also includes a gas injector for injecting at least one processing gas into the processing chamber for deposition on the substrate.

Abstract: A plasma reactor showerhead electrode assembly for processing semiconductor wafers comprised of a typically silicon disk shaped gas plate having a plurality of gas passage holes therethrough, and a graphite circular split collar assembly including first and second semicircular sections forming a circumferential inner slot when opposing ends of said sections are secured together, the slot mating in a dovetail connection with an outer circumferential groove of said gas plate for retaining the latter between said sections. A conductive gasket may be interposed between the gas plate groove and the mating collar assembly to provide an electrically and thermally conductive seal. The first and second semicircular sections have opposing ends screwed or pinned together for providing easy disassembly thereof for replacement of the gas plate.

Abstract: A platform for processing a substrate in a processing chamber of a reactor includes an annular body with a recessed, generally planar substrate support surface for supporting the substrate during processing. The platform includes at least one coupler for releasably securing the platform to a platform support surface positioned inside the processing chamber. The platform is releasably secured to the platform support surface in the processing in a manner which permits unrestrained relative thermal expansion of the platform. The substrate support surface is sized to permit unrestrained radial thermal expansion of the substrate and, preferably, recessed to support the device side of the substrate substantially flush with an upper surface of the platform. The platform is suitable for use in a processing reactor which includes a heater housing and an outer reactor housing. The heater housing encloses a heater assembly and provides the support surface for supporting the platform during processing.

Abstract: A heating assembly for heating semiconductor substrates includes a plurality of heating devices, with each heating device including an energy emitting filament adapted for electrically coupling to an external power supply and housed in a first enclosure. The first enclosure comprises energy transmitting material so that energy generated by the filament will be transmitted through the enclosure. A second enclosure houses the first enclosure, which also comprises energy transmitting material. The second enclosure is coated with a reflective layer and is housed in a third enclosure of transmitting material, which encapsulates the reflective coating so that when the energy emitting filament is energized, the reflective coating is contained in the heating device. A heating assembly includes a frame having a plurality of supports for supporting a plurality of the heating devices.

Abstract: A method and apparatus for fluid analysis includes a sensor for determining the index of refraction of a fluid. Advanced methods of fluid analysis relate index of refraction and other measured physical characteristics of the fluid.

Abstract: A reactor for processing a substrate includes a first housing defining a processing chamber and supporting a light source and a second housing rotatably supported in the first housing and adapted to rotatably support the substrate in the processing chamber. A heater for heating the substrate is supported by the first housing and is enclosed in the second housing. The reactor further includes at least one gas injector for injecting at least one gas into the processing chamber onto a discrete area of the substrate and a photon density sensor extending into the first housing for measuring the temperature of the substrate. The photon density sensor is adapted to move between a first position wherein the photon density sensor is directed to the light source and a second position wherein the photon density sensor is positioned for directing toward the substrate. Preferably, the communication cables comprise optical communication cables, for example sapphire or quartz communication cables.

Abstract: A well pumping system includes a pivotally mounted walking beam and "horsehead" connected to a downhole pump by a pump rod in the conventional manner. A hydraulic lift piston and cylinder and a pneumatic balance piston and cylinder are connected to the walking beam. A process control computer controls input signals to a hydraulic control valve for controlling the hydraulic cylinder rate and direction of travel to provide corresponding control over the motion of the walking beam. The computer receives input information from a position sensor indicating the displacement of the beam in its range of travel. The computer program also is responsive to a timer for determining actual stroke rate and acceleration of the beam. The computer monitors and controls operation of the hydraulics and pneumatics as the pumping unit produces the lift necessary to extract fluid from the well.

Abstract: A method and apparatus to control the plasma environment in a semiconductor or thin-film fabrication chamber. The apparatus and method include a means for measuring an optical emission spectrum of the chemical species in the plasma and a library containing a multiplicity of predefined spectral patterns. A processor automatically correlates the spectrum with the predefined spectral patterns in the library, and yields a correlation value for all the correlations. A subset of the predefined spectral patterns based upon the highest correlation values are selected and used to identify the chemical species and abundances thereof in the plasma. A comparator compares the subset with a target set of plasma species and abundances and a control signal generator generates a control signal in response to the comparison to control the chamber environment. In a preferred embodiment, the control signal controls the plasma environment in the reactor chamber when said subset differs from said target set by a predefined amount.