Patents Assigned to Cabot Microelectronics
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Patent number: 7255810Abstract: The invention provides a polishing system and method of its use comprising (a) a liquid carrier, (b) a polymer having a degree of branching of about 50% or greater, and (c) a polishing pad, an abrasive, or a combination thereof.Type: GrantFiled: January 9, 2004Date of Patent: August 14, 2007Assignee: Cabot Microelectronics CorporationInventors: Kevin J. Moeggenborg, Fred F. Sun
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Publication number: 20070181535Abstract: The invention provides a composition for chemical-mechanical polishing, The composition comprises an abrasive, a first metal rate polishing modifier agent, a second metal rate polishing modifier agent, and a liquid carrier. In one embodiment, the first metal rate polishing modifier agent has a standard reduction potential less than 0.34 V relative to a standard hydrogen electrode, and the second metal rate polishing modifier agent has a standard reduction potential greater than 0.34 V relative to a standard hydrogen electrode. In other embodiments, the first and second metal rate polishing modifier agents are different oxidizing agents.Type: ApplicationFiled: February 9, 2007Publication date: August 9, 2007Applicant: Cabot Microelectronics CorporationInventors: Francesco De Rege Thesauro, Steven Grumbine, Phillip Carter, Shoutian Li, Jian Zhang, David Schroeder, Ming-Shih Tsai
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Patent number: 7247567Abstract: The invention provides a method of chemically-mechanically polishing a substrate comprising tungsten through use of a composition comprising a tungsten etchant, an inhibitor of tungsten etching, and water, wherein the inhibitor of tungsten polishing is a polymer, copolymer, or polymer blend comprising at least one repeating group comprising at least one nitrogen-containing heterocyclic ring or a tertiary or quaternary nitrogen atom. The invention further provides a chemical-mechanical polishing composition particularly useful in polishing tungsten-containing substrates.Type: GrantFiled: June 16, 2004Date of Patent: July 24, 2007Assignee: Cabot Microelectronics CorporationInventors: Robert Vacassy, Dinesh N. Khanna, Alexander Simpson
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Patent number: 7238618Abstract: A system, composition, and a method for planarizing or polishing a composite substrate are provided. The planarizing or polishing system comprises (i) a polishing composition comprising (a) about 0.5 wt. % or more of fluoride 5 ions, (b) about 1 wt. % or more of an amine, (c) about 0.1 wt. % or more of a base, and (d) water, and (ii) an abrasive. The present invention also provides a method of planarizing or polishing a composite substrate comprising contacting the substrate with a system comprising (i) a polishing composition comprising (a) about 0.5 wt. % or more of fluoride ions, (b) about 1 wt. % or more of an amine, (c) about 0.1 wt. % or more of a base, and (d) water, and (ii) an abrasive.Type: GrantFiled: September 11, 2003Date of Patent: July 3, 2007Assignee: Cabot Microelectronics CorporationInventors: Brian L. Mueller, Jeffery P. Chamberlain, David J. Schroeder
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Publication number: 20070120090Abstract: A system, composition, and a method for planarizing or polishing a composite substrate are provided. The planarizing or polishing system comprises (i) a polishing composition comprising (a) about 0.5 wt. % or more of fluoride ions, (b) about 1 wt. % or more of an amine, (c) about 0.1 wt. % or more of a base, and (d) water, and (ii) an abrasive. The present invention also provides a method of planarizing or polishing a composite substrate comprising contacting the substrate with a system comprising (i) a polishing composition comprising (a) about 0.5 wt. % or more of fluoride ions, (b) about 1 wt. % or more of an amine, (c) about 0.1 wt. % or more of a base, and (d) water, and (ii) an abrasive.Type: ApplicationFiled: January 5, 2007Publication date: May 31, 2007Applicant: Cabot Microelectronics CorporationInventors: Brian MUELLER, Jeffery Chamberlain, David Schroeder
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Publication number: 20070117497Abstract: The invention provides a chemical-mechanical polishing system for polishing a substrate comprising a polishing component, a water-soluble silicate compound, an oxidizing agent, and water, wherein the pH of the polishing system is about 8 to about 12. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing system. The polishing system provides for reduced friction during polishing of substrates.Type: ApplicationFiled: November 22, 2005Publication date: May 24, 2007Applicant: Cabot Microelectronics CorporationInventors: Kevin Moeggenborg, Phillip Carter
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Publication number: 20070090094Abstract: The invention provides a method of chemically-mechanically polishing a substrate. A substrate comprising ruthenium and copper is contacted with a chemical-mechanical polishing system comprising a polishing component, hydrogen peroxide, an organic acid, at least one heterocyclic compound comprising at least one nitrogen atom, and water. The polishing component is moved relative to the substrate, and at least a portion of the substrate is abraded to polish the substrate. The pH of the polishing system is about 6 to about 12, the ruthenium and copper are in electrical contact, and the difference between the open circuit potential of copper and the open circuit potential of ruthenium in the polishing system is about 50 mV or less.Type: ApplicationFiled: October 26, 2005Publication date: April 26, 2007Applicant: Cabot Microelectronics CorporationInventors: Christopher Thompson, Vlasta Brusic, Renjie Zhou
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Patent number: 7204742Abstract: The invention provides a chemical-mechanical polishing pad comprising a polishing layer comprising a hydrophobic region, a hydrophilic region, and an endpoint detection port. The hydrophobic region is substantially adjacent to the endpoint detection port. The hydrophobic region comprises a polymeric material having a surface energy of 34 mN/m or less and a polymeric material having a surface energy of more than 34 mN/m. The invention further provides a method of polishing a substrate comprising the use of the polishing pad.Type: GrantFiled: March 25, 2004Date of Patent: April 17, 2007Assignee: Cabot Microelectronics CorporationInventor: Abaneshwar Prasad
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Publication number: 20070077865Abstract: The invention is directed to a method of chemically-mechanically polishing a substrate comprising polysilicon and a material selected from silicon oxide and silicon nitride with a chemical-mechanical polishing system comprising an abrasive, a polyethylene oxide/polypropylene oxide copolymer, water, and a polishing pad.Type: ApplicationFiled: October 4, 2005Publication date: April 5, 2007Applicant: Cabot Microelectronics CorporationInventors: Jeffrey Dysard, Timothy Johns, Paul Feeney
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Publication number: 20070075040Abstract: The invention provides compositions and methods for planarizing or polishing a surface. One composition comprises about 0.01 wt. % to about 20 wt. % ?-alumina particles, wherein the ?-alumina particles have an average diameter of 200 nm or less, and 80% of the ?-alumina particles have a diameter of about 500 nm or less, an organic acid, a corrosion inhibitor, and water. Another composition comprises ?-alumina particles, an organic acid, dual corrosion inhibitors of triazole and benzotriazole, wherein the wt. % ratio of the triazole to benzotriazole is about 0.1 to about 4.8, and water.Type: ApplicationFiled: September 30, 2005Publication date: April 5, 2007Applicant: Cabot Microelectronics CorporationInventors: Yuchun Wang, Jason Aggio, Bin Lu, John Parker, Renjie Zhou
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Patent number: 7198549Abstract: A chemical-mechanical polishing pad, and method of polishing a substrate using a polishing pad, comprising (a) a resilient subpad, and (b) a polymeric polishing film substantially coextensive with the resilient subpad, wherein the polymeric polishing film comprises (i) a polishing surface that is substantially free of bound abrasive particles, and (ii) a back surface releasably associated with the resilient subpad.Type: GrantFiled: June 16, 2004Date of Patent: April 3, 2007Assignee: Cabot Microelectronics CorporationInventors: J. Scott Steckenrider, Gary W. Snider
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Patent number: 7196337Abstract: This invention relates to an apparatus for processing particles. The apparatus comprises a particle source having an exist aperture; an extraction electrode located at the exist aperture; an acceleration electrode adjacent to the extraction electrode; a processing compartment adjacent to the acceleration electrode; and a deceleration electrode located adjacent to the processing compartment. The invention also relates to methods of processing particles and to particles processed by the apparatus and methods of the invention.Type: GrantFiled: April 22, 2004Date of Patent: March 27, 2007Assignee: Cabot Microelectronics CorporationInventor: David G. Mikolas
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Patent number: 7195539Abstract: The invention provides a polishing pad for chemical-mechanical polishing comprising (a) a first polishing layer comprising a polishing surface and a first aperture having a first length and first width, (b) a second layer comprising a body and a second aperture having a second length and second width, wherein the second layer is substantially coextensive with the first polishing layer and at least one of the first length and first width is smaller than the second length and second width, and (c) a substantially transparent window portion, wherein the transparent window portion is disposed within the second aperture of the second layer so as to be aligned with the first aperture of the first polishing layer and the transparent window portion is separated from the body of the second layer by a gap. The invention further provides a chemical-mechanical polishing apparatus and method of polishing a workpiece.Type: GrantFiled: September 19, 2003Date of Patent: March 27, 2007Assignee: Cabot Microelectronics CoporationInventors: Kyle A. Turner, Jeffrey L. Beeler, Kelly J. Newell
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Patent number: 7195544Abstract: The invention provides a polishing pad comprising a polymeric material having pores and a component that is disposed within the pores, as well as a method of polishing a workpiece with the aforesaid polishing pad, and a method for producing the aforesaid polishing pad.Type: GrantFiled: March 23, 2004Date of Patent: March 27, 2007Assignee: Cabot Microelectronics CorporationInventor: Abaneshwar Prasad
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Publication number: 20070039926Abstract: The invention provides a chemical-mechanical polishing system comprising a water-soluble silicate compound, an oxidizing agent that oxidizes at least a part of a substrate, water, and a polishing pad, wherein the polishing system is substantially free of abrasive particles. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing system. The polishing system is particularly useful in the removal of tantalum.Type: ApplicationFiled: August 17, 2005Publication date: February 22, 2007Applicant: Cabot Microelectronics CorporationInventors: Isaac Cherian, Kevin Moeggenborg
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Publication number: 20070010098Abstract: The invention is directed to a method of polishing a surface of a substrate comprising aluminum, comprising contacting a surface of the substrate with a polishing pad and a polishing composition comprising an abrasive, an agent that oxidizes aluminum, and a liquid carrier, and abrading at least a portion of the surface to remove at least some aluminum from the substrate and to polish the surface of the substrate, wherein the abrasive is in particulate form and is suspended in the liquid carrier.Type: ApplicationFiled: June 30, 2005Publication date: January 11, 2007Applicant: Cabot Microelectronics CorporationInventors: Vlasta Brusic, Richard Jenkins, Christopher Thompson
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Patent number: 7160807Abstract: The invention provides a method of polishing a substrate comprising (i) contacting a substrate comprising a noble metal layer with a chemical-mechanical polishing system comprising (a) a polishing component, (b) an oxidizing agent, and (c) a liquid carrier, and (ii) abrading at least a portion of the noble metal layer to polish the substrate. The polishing component is selected from the group consisting of an abrasive, a polishing pad, or a combination thereof, and the oxidizing agent is selected from the group consisting of bromates, bromites, hypobromites, chlorates, chlorites, hypochlorites, perchlorates, iodates, hypoiodites, periodates, peroxyacetic acid, organo-halo-oxy compounds, salts thereof, and combinations thereof. The chemical-mechanical polishing system has a pH of about 9 or less, and the oxidizing agent does not produce a substantial amount of elemental halogen.Type: GrantFiled: June 30, 2003Date of Patent: January 9, 2007Assignee: Cabot Microelectronics CorporationInventors: Francesco De Rege Thesauro, Vlasta Brusic, Benjamin P. Bayer
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Patent number: 7161247Abstract: The invention provides a polishing composition and a method of chemically-mechanically polishing a substrate comprising a noble metal, the polishing composition comprising (a) an oxidizing agent that oxidizes a noble metal, (b) an anion selected from the group consisting of sulfate, borate, nitrate, and phosphate, and (c) a liquid carrier. The invention further provides a polishing composition and a method of chemically-mechanically polishing a substrate comprising ruthenium, the polishing composition comprising (a) an oxidizing agent that oxidizes ruthenium above the +4 oxidation state, (b) a polishing additive selected from the group consisting of metal sequestering polymers, metal chelators, organic thiols, compounds that reduce ruthenium tetraoxide, lactones, and ?-hydroxycarbonyl compounds.Type: GrantFiled: July 28, 2004Date of Patent: January 9, 2007Assignee: Cabot Microelectronics CorporationInventors: Francesco De Rege Thesauro, Vlasta Brusic, Christopher C. Thompson, Benjamin P. Bayer
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Publication number: 20060286136Abstract: The invention provides a method of preparing a biomedical implant comprising the steps of providing a biomedical implant comprising a metal and having a surface, wherein the surface comprises a metal oxide layer, contacting the biomedical implant with a composition comprising an alkaline earth element, disrupting the metal oxide layer on the surface of the biomedical implant, and adhering the alkaline earth element to the surface of the biomedical implant.Type: ApplicationFiled: June 15, 2005Publication date: December 21, 2006Applicant: Cabot Microelectronics CorporationInventors: Kevin Moeggenborg, Steven Grumbine, Michel Laurent
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Publication number: 20060286906Abstract: The invention provides polishing pads comprising a deformable polishing pad body and magnetically sensitive particles dispersed therein, wherein one or more properties of the polishing pad are altered when in the presence of an applied magnetic field. The invention further provides a polishing system and a method for polishing a substrate involving such a polishing pad.Type: ApplicationFiled: June 21, 2005Publication date: December 21, 2006Applicant: Cabot Microelectronics CorporationInventors: Ronald Myers, Abaneshwar Prasad