Patents Assigned to Cabot Microelectronics
  • Method of operating and process for fabricating an electron source
    Patent number: 7875469
    Abstract: A method of operating and process for fabricating an electron source. A conductive rod is covered by an insulating layer, by dipping the rod in an insulation solution, for example. The rod is then covered by a field emitter material to form a layered conductive rod. The rod may also be covered by a second insulating material. Next, the materials are removed from the end of the rod and the insulating layers are recessed with respect to the field emitter layer so that a gap is present between the field emitter layer and the rod. The layered rod may be operated as an electron source within a vacuum tube by applying a positive bias to the rod with respect to the field emitter material and applying a higher positive bias to an anode opposite the rod in the tube. Electrons will accelerate to the charged anode and generate soft X-rays.
    Type: Grant
    Filed: December 12, 2007
    Date of Patent: January 25, 2011
    Assignee: Cabot Microelectronics Corporation
    Inventor: Heinz H. Busta
  • Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
    Patent number: 7846842
    Abstract: The invention provides a chemical-mechanical polishing composition comprising a cationic abrasive, a cationic polymer, a carboxylic acid, and water. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition. The polishing composition exhibits selectivity for removal of silicon nitride over removal of silicon oxide.
    Type: Grant
    Filed: February 2, 2009
    Date of Patent: December 7, 2010
    Assignee: Cabot Microelectronics Corporation
    Inventors: Phillip W. Carter, Timothy Johns
  • Composition and method for damascene CMP
    Patent number: 7837888
    Abstract: The invention provides a method of chemically-mechanically polishing a substrate having at least one feature defined thereon, wherein the feature has at least one dimension with a size W, with a chemical-mechanical polishing composition. The polishing composition comprises particles of an abrasive wherein the particles have a mean particle diameter DM wherein the mean particle diameter of the particles satisfies the equation: DM>W. The invention further provides a method of preparing the chemical-mechanical polishing composition.
    Type: Grant
    Filed: November 13, 2006
    Date of Patent: November 23, 2010
    Assignee: Cabot Microelectronics Corporation
    Inventors: Paul M. Feeney, Sriram Anjur, Jeffrey M. Dysard
  • Halide anions for metal removal rate control
    Patent number: 7820067
    Abstract: The inventive chemical-mechanical polishing system comprises a polishing component, a liquid carrier, an oxidizing agent, and a halogen anion. The inventive method comprises chemically-mechanically polishing a substrate with the polishing system.
    Type: Grant
    Filed: March 23, 2006
    Date of Patent: October 26, 2010
    Assignee: Cabot Microelectronics Corporation
    Inventor: Shoutian Li
  • Compositions and methods for CMP of semiconductor materials
    Patent number: 7803203
    Abstract: The invention provides a composition for chemical-mechanical polishing. The composition comprises an abrasive, a first metal rate polishing modifier agent, a second metal rate polishing modifier agent, and a liquid carrier. In one embodiment, the first metal rate polishing modifier agent has a standard reduction potential less than 0.34 V relative to a standard hydrogen electrode, and the second metal rate polishing modifier agent has a standard reduction potential greater than 0.34 V relative to a standard hydrogen electrode. In other embodiments, the first and second metal rate polishing modifier agents are different oxidizing agents.
    Type: Grant
    Filed: February 9, 2007
    Date of Patent: September 28, 2010
    Assignee: Cabot Microelectronics Corporation
    Inventors: Francesco De Rege Thesauro, Steven Grumbine, Phillip Carter, Shoutian Li, Jian Zhang, David Schroeder, Ming-Shih Tsai
  • Low pH barrier slurry based on titanium dioxide
    Patent number: 7803711
    Abstract: The invention provides a method of chemically-mechanically polishing a substrate. A substrate is contacted with a polishing pad and a polishing composition comprising an abrasive consisting of (A) particles consisting of titanium dioxide having a rutile structure and (B) particles consisting of titanium dioxide having an anatase structure, wherein an x-ray diffraction pattern of the particles has a ratio of X/Y of about 0.5 or more, wherein X is an intensity of a peak in an x-ray diffraction curve representing a d-spacing of about 3.24 ?, and Y is an intensity of a peak in an x-ray diffraction curve representing a d-spacing of about 3.51 ?, and water. The polishing component is moved relative to the substrate, and at least a portion of the substrate is abraded to polish the substrate.
    Type: Grant
    Filed: September 18, 2007
    Date of Patent: September 28, 2010
    Assignee: Cabot Microelectronics Corporation
    Inventors: Daniela White, John C. Parker
  • CMP system utilizing halogen adduct
    Patent number: 7776230
    Abstract: The invention provides a chemical-mechanical polishing system for polishing a substrate comprising (a) a polishing component selected from an abrasive, a polishing pad, or both an abrasive and a polishing pad, (b) an aqueous carrier, and (c) the halogen adduct resulting from the reaction of (1) an oxidizing agent selected from the group consisting of iodine, bromine, and a combination thereof, and (2) a carbon acid having a pKa of about 3 to about 14, wherein the halogen adduct is present in a concentration of about 0.01 mM or more in the aqueous carrier. The invention also provides a method of polishing a substrate comprising (i) providing the aforementioned chemical-mechanical polishing system, (ii) contacting the substrate with the polishing system, and (iii) abrading at least a portion of the surface of the substrate with the polishing system to polish the substrate.
    Type: Grant
    Filed: February 9, 2007
    Date of Patent: August 17, 2010
    Assignee: Cabot Microelectronics Corporation
    Inventors: Steven Grumbine, Francesco De Rege Thesauro
  • POLISHING COMPOSITION FOR NICKEL-PHOSPHOROUS MEMORY DISKS
    Publication number: 20100193470
    Abstract: The invention provides a chemical-mechanical polishing composition comprising alpha alumina, fumed alumina, silica, an oxidizing agent that oxidizes nickel-phosphorous, oxalic acid, optionally, tartaric acid, optionally, a nonionic surfactant, optionally, a biocide, and water. The invention also provides a method of chemically-mechanically polishing a substrate comprising contacting a substrate with a polishing pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate.
    Type: Application
    Filed: February 3, 2009
    Publication date: August 5, 2010
    Applicant: Cabot Microelectronics Corporation
    Inventors: Selvaraj Palanisamy Chinnathambi, Haresh Siriwardane
  • Chemical-mechanical polishing composition and method for using the same
    Patent number: 7754098
    Abstract: The invention provides a chemical-mechanical polishing composition comprising: (a) silica particles, (b) about 5×10?3 to about 10 millimoles per kilogram of at least one alkaline earth metal selected from the group consisting of calcium, strontium, barium, and mixtures thereof, based on the total weight of the polishing composition, (c) about 0.1 to about 15 wt. % of an oxidizing agent, and (d) a liquid carrier comprising water. The invention also provides a polishing composition, which optionally comprises an oxidizing agent, comprising about 5×10?3 to about 10 millimoles per kilogram of at least one alkaline earth metal selected from the group consisting of calcium, strontium, and mixtures thereof. The invention further provides methods for polishing a substrate using the aforementioned polishing compositions.
    Type: Grant
    Filed: September 10, 2004
    Date of Patent: July 13, 2010
    Assignee: Cabot Microelectronics Corporation
    Inventors: David J. Schroeder, Kevin J. Moeggenborg
  • Oxidation-stabilized CMP compositions and methods
    Patent number: 7732393
    Abstract: The present invention provides a chemical-mechanical polishing (CMP) composition comprising an amino compound, a radical-forming oxidizing agent, a radical trapping agent capable of inhibiting radical-induced oxidation of the amino compound, and an aqueous carrier therefore. The radical trapping agent is a hydroxyl-substituted polyunsaturated cyclic compound, a nitrogenous compound, or a combination thereof. Optionally, the composition comprises a metal oxide abrasive (e.g., silica, alumina, titania, ceria, zirconia, or a combination of two or more of the foregoing abrasives). The invention further provides a method of chemically-mechanically polishing a substrate with the CMP compositions, as well as a method of enhancing the shelf-life of CMP compositions containing an amine and a radical-forming oxidizing agent, in which a radical trapping agent is added to the CMP composition.
    Type: Grant
    Filed: March 20, 2006
    Date of Patent: June 8, 2010
    Assignee: Cabot Microelectronics Corporation
    Inventors: Steven K. Grumbine, Renjie Zhou, Zhan Chen, Phillip W. Carter
  • CMP porous pad with component-filled pores
    Patent number: 7699684
    Abstract: This invention provides a method for polishing pad comprising a polymeric material having pores and a component that is disposed within the pores.
    Type: Grant
    Filed: March 26, 2007
    Date of Patent: April 20, 2010
    Assignee: Cabot Microelectronics Corporation
    Inventor: Abaneshwar Prasad
  • Method of preparing a conductive film
    Patent number: 7686994
    Abstract: The invention provides a method for producing a conductive film that generates an electric current via field emission of electrons, which method comprises incorporating an electrically conductive material into a thermoplastic polymer. The invention also provides a conductive film and a method for generating an electric current via field emission of electrons.
    Type: Grant
    Filed: March 2, 2005
    Date of Patent: March 30, 2010
    Assignee: Cabot Microelectronics Corporation
    Inventors: Abaneshwar Prasad, Ronald E. Myers
  • Compositions and methods for dielectric CMP
    Patent number: 7677956
    Abstract: The invention is directed to a chemical-mechanical polishing composition comprising (a) an abrasive consisting essentially of aggregated silica, (b) an acid, and (c) a liquid carrier, wherein the polishing composition has a pH of about 5 or less. The invention is also directed to a method of polishing a substrate comprising a dielectric layer using the polishing composition.
    Type: Grant
    Filed: May 10, 2002
    Date of Patent: March 16, 2010
    Assignee: Cabot Microelectronics Corporation
    Inventors: Phillip Carter, Gregory H Bogush, Farhana Khan, Timothy P Johns, Robert Vacassy
  • Silicon carbide polishing method utilizing water-soluble oxidizers
    Patent number: 7678700
    Abstract: The inventive method comprises chemically-mechanically polishing a substrate comprising at least one layer of silicon carbide with a polishing composition comprising a liquid carrier, an abrasive, and an oxidizing agent.
    Type: Grant
    Filed: September 5, 2006
    Date of Patent: March 16, 2010
    Assignee: Cabot Microelectronics Corporation
    Inventors: Mukesh Desai, Kevin Moeggenborg, Phillip Carter
  • METHODS FOR POLISHING ALUMINUM NITRIDE
    Publication number: 20100062601
    Abstract: The present invention provides a method for polishing an aluminum nitride substrate. The method comprises abrading a surface of the aluminum nitride substrate with a basic, aqueous polishing composition, which comprises an abrasive (e.g., colloidal silica), an oxidizing agent (e.g., hydrogen peroxide), and an aqueous carrier. The methods of the invention provide for substantially improved polishing rates relative to conventional methods that do not utilize an oxidizing agent in the polishing slurry.
    Type: Application
    Filed: November 13, 2007
    Publication date: March 11, 2010
    Applicant: Cabot Microelectronics Corporation
    Inventor: Kevin Moeggenborg
  • METHOD OF POLISHING NICKEL-PHOSPHOROUS
    Publication number: 20100009537
    Abstract: The invention is directed to a method of chemically-mechanically polishing a a surface of a substrate, comprising contacting a surface of a substrate comprising nickel-phosphorous with a chemical-mechanical polishing composition comprising wet-process silica, an agent that oxidizes nickel-phosphorous, and an aminopolycarboxylic acid, wherein the polishing composition has a pH of about 1 to about 5, and abrading at least a portion of the nickel-phosphorous to polish the substrate.
    Type: Application
    Filed: July 10, 2008
    Publication date: January 14, 2010
    Applicant: Cabot Microelectronics Corporation
    Inventors: Venkataramanan Balasubramaniam, Ping-Ha Yeung
  • STABLE, HIGH RATE SILICON SLURRY
    Publication number: 20090291559
    Abstract: The invention provides a chemical-mechanical polishing composition comprising wet-process silica, a stabilizer compound, a potassium salt, a secondary amine compound, and water. The invention further provides a method of polishing a substrate with the polishing composition.
    Type: Application
    Filed: May 23, 2008
    Publication date: November 26, 2009
    Applicant: Cabot Microelectronics Corporation
    Inventors: Michael White, Jeffrey Gilliland, Lamon Jones, Alicia Walters
  • COMPOSITIONS FOR POLISHING ALUMINUM/COPPER AND TITANIUM IN DAMASCENE STRUCTURES
    Publication number: 20090236559
    Abstract: The invention provides compositions and methods for planarizing or polishing a substrate. The composition comprises an abrasive consisting of alumina particles optionally treated with a polymer, an ?-hydroxycarboxylic acid, an oxidizing agent that oxidizes at least one metal, polyacrylic acid, optionally, a calcium-containing compound, optionally, a biocide, optionally, a pH adjusting agent, and water. The method uses the composition to chemically-mechanically polish a substrate.
    Type: Application
    Filed: March 21, 2008
    Publication date: September 24, 2009
    Applicant: Cabot Microelectronics Corporation
    Inventors: Vlasta Brusic, Christopher Thompson, Jeffrey Dysard
  • X-RAY SOURCE WITH NONPARALLEL GEOMETRY
    Publication number: 20090232279
    Abstract: An improved electron bombardment device includes a first tubular member for containing a target material and a second tubular member surrounding the first tubular member, leaving a space between the first and second tubular members. In an embodiment of the invention, the second tubular member is an electron emitting material, and the bombardment device includes a voltage application means for accelerating emitted electrons from the second tubular member towards the first tubular member. In a further embodiment of the invention, the second tubular member comprises a thermionic electron emitting material. In an alternative embodiment, the second tubular member comprises a field electron emitting material.
    Type: Application
    Filed: April 9, 2009
    Publication date: September 17, 2009
    Applicant: Cabot Microelectronics Corporation
    Inventors: Stanley D. Lesiak, Heinz H. Busta, Bruce M. Zwicker
  • Polishing composition containing polyether amine
    Patent number: 7585340
    Abstract: The inventive chemical-mechanical polishing system comprises a polishing component, a liquid carrier, and a polyether amine. The inventive method comprises chemically-mechanically polishing a substrate with the aforementioned polishing system.
    Type: Grant
    Filed: April 27, 2006
    Date of Patent: September 8, 2009
    Assignee: Cabot Microelectronics Corporation
    Inventors: Jeffrey M. Dysard, Paul M. Feeney, Sriram P. Anjur, Timothy P. Johns, Yun-Biao Xin, Li Wang