Patents Assigned to Capres
  • Method for sheet resistance and leakage current density measurements on shallow semiconductor implants
    Patent number: 9075107
    Abstract: A method for accurately determining the sheet resistance and leakage current density of a shallow implant in a semiconductor substrate surface includes making one or more four-point resistance measurements with an induced current below 100 ?A on the semiconductor surface with a plurality of electrode spacing sets, at least one set defining an electrode separation distance less than 100 ?m. The sheet resistance and implant leakage are determined through fitting the measured data to theoretical data to within a predetermined error margin.
    Type: Grant
    Filed: April 24, 2007
    Date of Patent: July 7, 2015
    Assignee: Capres
    Inventor: Christian L. Petersen