Abstract: A method for accurately determining the sheet resistance and leakage current density of a shallow implant in a semiconductor substrate surface includes making one or more four-point resistance measurements with an induced current below 100 ?A on the semiconductor surface with a plurality of electrode spacing sets, at least one set defining an electrode separation distance less than 100 ?m. The sheet resistance and implant leakage are determined through fitting the measured data to theoretical data to within a predetermined error margin.

Abstract: A method of obtaining an electrical property of a test sample, comprising a non-conductive area and a conductive or semi-conductive test area, by performing multiple measurements using a multi-point probe. The method comprising the steps of providing a magnetic field having field lines passing perpendicularly through the test area, bringing the probe into a first position on the test area, the conductive tips of the probe being in contact with the test area, determining a position for each tip relative to the boundary between the non-conductive area and the test area, determining distances between each tip, selecting one tip to be a current source positioned between conductive tips being used for determining a voltage in the test sample, performing a first measurement, moving the probe and performing a second measurement, calculating on the basis of the first and second measurement the electrical property of the test area.

Abstract: A multi-point probe particularly suitable for automated handling is disclosed. An automated multi-point measuring system including the multi-point probe and a probe manipulator head is also disclosed In addition, an automated multi-point probe gripping system including a probe holder and the probe manipulator head is revealed. Further, a loaded probe loader comprising a probe loader and a probe cassette for handling the multi-point probe is also revealed, where the probe cassette is provided with the probe holder for securing the multi-point probe.

Abstract: A method for aligning a probe relative to a supporting substrate defining a first planar surface, an edge, and a first crystal plane includes the steps of masking the surface of the substrate to define an exposed area on the first surface at the edge; and etching, using an etch reagent, a recess in the exposed area, the recess defining first and second opposed sidewalls, an end wall remote from the edge, and a bottom wall. The method further includes the step of providing a probe substrate defining a second planar surface and a second crystal plane identical to the first crystal plane, and positioning the probe substrate so that the first and the second crystal planes are positioned identically when forming a probe from the probe substrate using the etch reagent, wherein the probe defines congruent surfaces to the first and second sidewalls.

Abstract: A probe for testing electrical properties of test samples includes a body having a probe arm defining proximal and distal ends, the probe arm extending from the body at the proximal end of the probe arm, whereby a first axis is defined by the proximal and the distal ends. The probe arm defines a geometry allowing flexible movement of the probe arm along the first axis and along a second axis perpendicular to the first axis, and along a third axis orthogonal to a plane defined by the first axis and the second axis.

Abstract: A method for accurately determining the sheet resistance and leakage current density of a shallow implant in a semiconductor surface (520) includes making one or more four-point resistance measurements with an induced current below 100 ?A on the semiconductor surface (520) with a plurality of electrode spacing sets, at least one set having an average spacing below 100 ?m. The sheet resistance and implant leakage is determined through fitting the measured data to theoretical data to within a predetermined error.

Abstract: A method for accurately determining the sheet resistance and leakage current density of a shallow implant in a semiconductor surface (520) includes making one or more four-point resistance measurements with an induced current below 100 ?A on the semiconductor surface (520) with a plurality of electrode spacing sets, at least one set having an average spacing below 100 ?m. The sheet resistance and implant leakage is determined through fitting the measured data to theoretical data to within a predetermined error.

Abstract: The present invention relates to a probe for determining an electrical property of an area of a surface of a test sample, the probe is intended to be in a specific orientation relative to the test sample. The probe may comprise a supporting body defining a first surface. A plurality of cantilever arms (12) may extend from the supporting body in co-planar relationship with the first surface. The plurality of cantilever arms (12) may extend substantially parallel to each other and each of the plurality of cantilever arms (12) may include an electrical conductive tip for contacting the area of the test sample by movement of the probe relative to the surface of the test sample into the specific orientation. The probe may further comprise a contact detector (14) extending from the supporting body arranged so as to contact the surface of the test sample prior to any one of the plurality of cantilever arms (12) contacting the surface of the test sample when performing the movement.

Abstract: Calculating resistance correction factors includes contacting the arms of a four-arm probe with a test sample; selecting a first set of first and second arms and a second set of third and fourth arms; applying a first current from the first arm to the second arm of the first set; detecting a first voltage between the third and fourth arms of the second set; calculating a first resistance using the first voltage and current; selecting a third set of first and second arms including no more than one arm of the first set, and a fourth set of third and fourth arms including no more than one arm of the second set; applying a second current from the first arm to the second arm of the third set; detecting a second voltage between the third and fourth arms of the fourth set; calculating a second resistance using the second voltage and current; and calculating a correction factor using the first and second resistances.

Abstract: A method for aligning a probe relative to a supporting substrate defining a first planar surface, an edge, and a first crystal plane includes the steps of masking the surface of the substrate to define an exposed area on the first surface at the edge; and etching, using an etch reagent, a recess in the exposed area, the recess defining first and second opposed sidewalls, an end wall remote from the edge, and a bottom wall. The method further includes the step of providing a probe substrate defining a second planar surface and a second crystal plane identical to the first crystal plane, and positioning the probe substrate so that the first and the second crystal planes are positioned identically when forming a probe from the probe substrate using the etch reagent, wherein the probe defines congruent surfaces to the first and second sidewalls.

Abstract: Calculating resistance correction factors includes contacting the arms of a four-arm probe with a test sample; selecting a first set of first and second arms and a second set of third and fourth arms; applying a first current from the first arm to the second arm of the first set; detecting a first voltage between the third and fourth arms of the second set; calculating a first resistance using the first voltage and current; selecting a third set of first and second arms including no more than one arm of the first set, and a fourth set of third and fourth arms including no more than one arm of the second set; applying a second current from the first arm to the second arm of the third set; detecting a second voltage between the third and fourth arms of the fourth set; calculating a second resistance using the second voltage and current; and calculating a correction factor using the first and second resistances.

Abstract: A method for aligning a probe relative to a Supporting substrate defining a first planar surface, an edge, and a first crystal plane includes the steps of masking the surface of the substrate to define an exposed area on the first surface at the edge; and etching, using an etch reagent, a recess in the exposed area, the recess defining first and second opposed sidewalls, an end wall remote from the edge, and a bottom wall. The method further includes the step of providing a probe substrate defining a second planar surface and a second crystal plane identical to the first crystal plane, and positioning the probe substrate so that the first and the second crystal planes are positioned identically when forming a probe from the probe substrate using the etch reagent, wherein the probe defines congruent surfaces to the first and second sidewalls.

Abstract: A multi-point electrical probe for testing location-specific electrical properties on circuit boards. Four generally parallel, electrically conducting probe arms are produced preferably by wafer-based techniques, although any even number of probe arms between two and 64 may be used. The precision of wafer-based manufacturing techniques permits miniaturization beyond that which is conventionally obtained by assembling discrete components. The probe arms are generally flexible, and may be shaped suitably to accommodate a particular circuit geometry. The probe and/or the sample under test may be precisely located by suitable translation and/or rotation stages, which may optionally be placed under computer control. A suitable wiring diagram is provided, and preferable manufacturing techniques are discussed.

Abstract: An electrical feedback detection system for detecting electrical contact between a multi-point probe and an electrically conducting material test sample surface. The electrical feedback detection system comprises an electrical detector unit connected to a multitude of electrodes in the multi-point probe, and optionally directly to the test sample surface. The detector unit provides an electrical signal to a multi-point testing apparatus, which can be used to determine if the multi-point probe is in electrical contact with the test sample surface. The detector unit comprises an electrical generator means for generating an electrical signal that is driven through a first multitude of electrodes of the multi-point probe, and a second multitude of switched impedance detection elements. The electrical potential across the impedance detection elements determines the electrical contact to the test sample surface.

Abstract: The multi-point probe comprises a supporting body defining a first surface, a first multitude of conductive probe arms each of the probe arms defining a proximal end and a distal end being positioned in co-planar relationship with the first surface of the supporting body. The probe arms are connected to the supporting body at the proximal ends thereof and have the distal ends freely extending from the supporting body, giving individually flexible motion to the first multitude of probe arms. The probe arms originate from a process of producing the probe arms on a wafer body in facial contact with the wafer body and removal of a part of the wafer body providing the supporting body and providing the probe arms freely extending therefrom. The multi-point probe further comprises a third multitude of tip elements extending from the distal end of the first multitude of probe arms. The tip elements originate from a process of metallization of electron beam depositions on the probe arms at the distal ends thereof.

Abstract: An electrical feedback detection system for detecting electrical contact between a multi-point probe and an electrically conducting material test sample surface. The electrical feedback detection system comprises an electrical detector unit connected to a multitude of electrodes in the multi-point probe, and optionally directly to the test sample surface. The detector unit provides an electrical signal to a multi-point testing apparatus, which can be used to determine if the multi-point probe is in electrical contact with the test sample surface. The detector unit comprises an electrical generator means for generating an electrical signal that is driven through a first multitude of electrodes of the multi-point probe, and a second multitude of switched impedance detection elements. The electrical potential across the impedance detection elements determines the electrical contact to the test sample surface.