Abstract: A projection exposure system, in particular for microlithography, serves to generate an image of an object disposed in an object plane in an image plane. For this purpose, use is made of a light source emitting projection light, illumination optics disposed in the beam path between the light source and the object plane and projection optics disposed in the beam path between the object plane and the image plane. Disposed in the vicinity of a field plane of the illumination optics is at least one optical element that changes the angular illumination distribution of the projection light passing through. The change, impressed by the optical element, in the angular illumination distribution is non-rotationally symmetrical with respect to the optical axis. The optical element can be disposed in various angular positions around an axis perpendicular to the field plane. Such an optical element makes it possible to modify the symmetry of the angular illumination distribution flexibly.

Abstract: A microlithographic projection illumination system has a focus-detection system for optically detecting deviations of the image plane of a projection lens from the upper surface of a substrate arranged in the vicinity of its image plane. The focus-detection system has a system for coupling in at least one measuring beam that is obliquely incident on, and to be reflected at, the substrate surface into an intermediate zone between the final optical surface of the imaging system and the substrate surface and a system for coupling out the measuring beam and detecting it following its reflection at the substrate surface.

Abstract: A method and a device for determining the resistance of an optical material to radiation damage, wherein several sample volumes (1a, 1b; 1211-1233) within the optical material are simultaneously irradiated with test radiation having differing, measured or preset radiant-energy densities. The radiation employed for all sample volumes comes from a common radiation source (3; 13) and at least one parameter indicative of the resistances to radiation damage of the irradiated sample volumes is measured using measuring radiation. The measuring radiation also comes from the same radiation source that supplies the test radiation and the material's resistance to radiation damage is determined based on a functional relation between its radiation-damage-resistance parameter and the radiant-energy densities, wherein that functional relation is determined using the values of the radiation-damage-resistance parameters measured for the various sample volumes for the various radiant-energy densities employed.

Abstract: A projection objective has at least five lens groups (G1 to G5) and has several lens surfaces. At least two aspheric lens surfaces are arranged so as to be mutually adjacent. These mutually adjacently arranged lens surfaces are characterized as a double asphere. This at least one double asphere (21) is mounted at a minimum distance from an image plane (0′) which is greater than the maximum lens diameter (D2) of the objective.

Abstract: An illumination system for wavelengths ≦193 run comprises (a) a first raster element upon which a light bundle emitted from a light source impinges, for producing a convergent light bundle having a focal point, and (b) a second raster element. The convergent light bundle impinges on the second raster element outside the focal point. There is also provided an illumination system for wavelengths ≦193 nm, comprising (a) a first plurality of raster elements upon which a light bundle emitted from a light source impinges, for producing a plurality of convergent light bundles, where a member of the first plurality of raster elements produces a member of the plurality of convergent light bundles having a focal point, and (b) a second plurality of raster elements. The member of the plurality of convergent light bundles impinges on a member of the second plurality of raster elements outside the focal point.

Abstract: An object pattern is imaged by an imaging system onto the image plane of the imaging system at a location where a reference pattern suited to the object pattern is situated in order to measure the imaging fidelity of an optical imaging system, for example, an eyeglass lens, a photographic lens, or a projection lens, for use in the visible spectral range. The resultant, two-dimensional, superposition pattern is detected in a spatially resolved manner in order to determine imaging parameters therefrom. The object pattern is generated with the aid of at least one electronically controllable pattern generator that serves as a self-luminous, electronically configurable, incoherent light source and may, for example, have a color monitor. The measuring system allows rapidly, flexibly, checking optical imaging systems with minimal time and effort spent on the mechanical setup required.

Abstract: An objective (1), in particular for a microlithography projection apparatus, has lenses or lens parts falling into at least two groups. The first group (3) is made of a first crystalline material and the second group (5) is made of a second crystalline material. In the first group (3), an outermost aperture ray (15) is subject to a first optical path difference between two mutually orthogonal states of linear polarization; and the same outermost aperture ray is subject to a second optical path difference in the second group (5). The two different crystalline materials are selected so that the first and second optical path difference approximately compensate each other. A suitable selection consists of calcium fluoride for the first and barium fluoride for the second crystalline material.

Abstract: In the case of an adjusting apparatus for an optical element in a lens system, in particular a lens in a projection lens system for semiconductor lithography, for producing tilting movements, having at least one actuator, the optical element is connected via elastic connecting members, directly or indirectly via an inner mount, to an outer mount. The elastic connecting members or the at least one actuator are/is provided in each case with bearing bridges which have bearing locations for a connection to the optical element or to the inner mount, and bridge arms which are connected to the bearing locations. The bridge arms are provided with piezoceramic elements in plate or sheet form which undergo changes in length upon activation. The piezoceramic elements of the various bearing bridges can be activated individually or together.

Abstract: A projection exposure apparatus for microlithography using a wavelength≦193 nm, includes (A) a primary light source, (B) an illumination system having (1) an image plane, (2) a plurality of raster elements for receiving light from the primary light source, and (3) a field mirror for receiving the light from the plurality of raster elements and for forming an arc-shaped field having a plurality of field points in the image plane, and (C) a projection objective. The illumination system has a principle ray associated with each of the plurality of field points thus defining a plurality of principle rays. The plurality of principle rays run divergently into the projection objective.

Abstract: A zoom system for an illumination device of a microlithographic projection exposure system is configured in the form of a focal-length zoom lens. The lenses of the zoom system define an object plane (6) and an image plane (8) that is a Fourier transform of the object plane. The zoom system is characterized by a large expansion of the illuminated area in the image plane, where expansion factors (D) in excess of four are feasible and are obtained by employing lens groups (33, 36) that are movable over large moving ranges.

Abstract: There is provided an illumination system for scannertype microlithography along a scanning direction with a light source emitting a wavelength ≦193 nm. The illumination system includes a plurality of raster elements. The plurality of raster elements is imaged into an image plane of the illumination system to produce a plurality of images being partially superimposed on a field in the image plane. The field defines a non-rectangular intensity profile in the scanning direction.

Abstract: A method for coating substrates (10) for optical components with essentially rotationally symmetric coatings employs a coating system equipped with a planetary-drive system (1) that has a rotating planet carrier (2) and several planets (4), each of which carries a single substrate, that corotate both with the planet carrier and with respect to the primary carrier. In one embodiment a set of stationary first masks (20) that allow controlling the radial variation in physical film thickness is arranged between a source (8) of material situated beneath the planets and the substrates. A set of second masks that mask off evaporation angles exceeding a limiting evaporation or incidence angle (&bgr;max) for every substrate also corotate with the primary carrier (2), which allows depositing coatings having a prescribed radial film-thickness distribution and a virtually constant density of the coating material over their full radial extents for relatively low, and only slightly varying, evaporation angles.

Abstract: A point-diffraction interferometer having a source (1) of electromagnetic radiation, a perforated mask (2) on its entrance end, an optics-testing space (4) into which the optics (9) to be tested may be inserted, elements (5, 6) that create a testing beam and a reference beam using a perforated mask (6) on its exit end, and a component (7, 8) that analyzes an interference pattern (16) created by superimposing its testing beam and reference beam. One-dimensional or two-dimensional arrays (12, 15) of nearly point-like through holes are incorporated into the perforated masks (2, 6) on the interferometer's entrance end and exit end. The interferometer has particular application to testing optical systems employed on photolithographic exposure systems.

Abstract: A mount for an optical element in an optical imaging device, in particular in a lens system (4) for semiconductor lithography, has at least one mounting ring (2) which bears the optical element (6). The mounting ring (2) is of at least partially hollow design in cross section.

Abstract: A method for fabricating a geometric beamsplitter involves applying a reflective coating having at least one metallic layer to a transparent substrate. A pattern of holes containing numerous holes that are preferably randomly distributed over its reflective surface is created in the reflective coating using laser processing. The method allows inexpensively fabricating beamsplitters that have accurately defined transmittances. Beamsplitters in accordance with the invention are suitable for use as dosimetry mirrors on, for example, the illumination systems of microlithographic projection exposure systems.

Abstract: A catadioptric projection lens configured for imaging a pattern arranged in an object plane (2) onto an image plane (4) while creating a single, real, intermediate image (3) has a catadioptric first section (5) having a concave mirror (6) and a beam-deflection device (7), and a dioptric second section (8) that commences after the beam-deflection device. The system is configured such that the intermediate image follows the first lens (17) of the dioptric section (8) and is preferably readily accessible. Arranging the intermediate image both between a pair of lenses (17, 21) of the dioptric section and at a large distance behind the final reflective surface of the beam-deflection device helps to avoid imaging aberrations.

Abstract: An optical system, in particular an exposure lens for semiconductor lithography, with a plurality of optical elements has at least one load-dissipating structure. The load-dissipating structure diverts the forces originating from the optical elements. The optical system also has a measuring structure constructed independently of the at least one load-dissipating structure.

Abstract: A microlithographic illumination method for imaging a pattern arranged in an object plane of a projection lens onto an image plane of the projection lens, under which a special means for optically correcting the optical path lengths of s-polarized and p-polarized light such that light beams of both polarizations will either traverse essentially the same optical path length between the object plane and the image plane or any existing difference in their optical path lengths will be retained, largely independently of their angles of incidence on the image plane, which will allow avoiding contrast variations due to pattern orientation when imaging finely structured patterns, is disclosed. The contrast variations may be caused by uncorrected projection lenses due to their employment of materials that exhibit stress birefringence and/or coated optical components, such as deflecting mirrors, that are used at large angles of incidence.

Abstract: An attenuating filter provides a prescribed attenuation of the intensity of transmitted, short-wavelength, ultraviolet light, in particular, at wavelengths below 200 nm, that is governed by a predefinable spatial distribution of its spectral transmittance. The filter has a transparent substrate (3), e.g. fabricated from crystalline calcium fluoride. A filter coating (5) fabricated from a dielectric material that absorbs over a predefined wavelength range is applied to at least one surface (4) of the substrate. In the case of operating wavelengths of about 193 nm, the filter coating consists largely of tantalum pentoxide. Filters of the type, which may be inexpensively fabricated with high yields, are noted for their high abilities to withstand laser radiation and may be effectively antireflection coated employing simply designed antireflection coatings.

Abstract: An optical imaging system having several imaging optical components (L1-L16) sequentially arranged along an optical axis (16), a means for creating radially polarized light arranged at a given location in that region extending up to the last of said imaging optical components, and a crystalline-quartz plate employable in such a system. A polarization rotator (14) for rotating the planes of polarization of radially polarized light and transforming same into tangentially polarized light, particularly in the form of a crystalline-quartz plate as noted above, is provided at a given location within a region commencing where those imaging optical components that follow said means for creating radially polarized light in the optical train are arranged. The optical imaging system is particularly advanteous when embodied as a microlithographic projection exposuresystem.