Abstract: A microlithographic projection exposure apparatus includes an illumination system and a projection objective. During use of the microlithographic projection exposure apparatus, the illumination system illuminates an object plane of the projection objective. The illumination system is configured so that light components in point-symmetrical relationship with each other, which are produced during use of the illumination system and which are only superposed in the object plane, have mutually orthogonal polarization states.

Abstract: In general, in one aspect, the invention features an objective arranged to image radiation from an object plane to an image plane, including a plurality of elements arranged to direct the radiation from the object plane to the image plane, wherein the objective has an image side numerical aperture of more than 0.55 and a maximum image side field dimension of more than 1 mm, and the objective is a catoptric objective.

Abstract: A microlithographic projection exposure apparatus comprises a projection objective which images an object onto an image plane and has a lens with a curved surface. In the projection objective there is a liquid or solid medium which directly adjoins the curved surface over a region which is usable for imaging the object. The projection exposure apparatus also has an adjustable manipulator for reducing an image field curvature which is caused by heating of the medium during the projection operation.

Abstract: The disclosure relates to an illumination system of a microlithographic projection exposure apparatus. The illumination system can include a depolariser which in conjunction with a light mixing system disposed downstream in the light propagation direction at least partially causes effective depolarisation of polarised light impinging on the depolariser. The illumination system can also include a microlens array which is arranged upstream of the light mixing system in the light propagation direction. The microlens array can include a plurality of microlenses arranged with a periodicity. The depolariser can be configured so that a contribution afforded by interaction of the depolariser with the periodicity of the microlens array to a residual polarisation distribution occurring in a pupil plane arranged downstream of the microlens array in the light propagation direction has a maximum degree of polarisation of not more than 5%.

Abstract: An optical element for use in an illumination optical unit of an EUV microlithography projection exposure apparatus includes a plurality of reflective facet elements. Each reflective facet element has at least one reflective surface. In this case, at least one facet element is arranged in a manner rotatable about a rotation axis. The rotation axis intersects the at least one reflective surface of the facet element. With such an optical element, it is possible to alter the direction and/or the intensity of at least part of the illumination radiation within the illumination optical unit in a simple manner.

Abstract: Microlithographic illumination system includes individually drivable elements to variably illuminate a pupil surface of the system. Each element deviates an incident light beam based on a control signal applied to the element. The system also includes an instrument to provide a measurement signal, and a model-based state estimator configured to compute, for each element, an estimated state vector based on the measurement signal. The estimated state vector represents: a deviation of a light beam caused by the element; and a time derivative of the deviation. The illumination system further includes a regulator configured to receive, for each element: a) the estimated state vector; and b) target values for: i) the deviation of the light beam caused by the deviating element; and ii) the time derivative of the deviation.

Abstract: A facet mirror (6; 10) serves for use in microlithography. The facet mirror (6; 10) has a plurality of facets (7; 11) which predefine illumination channels for guiding partial beams of EUV illumination light (3). At least some of the facets (7; 11) are displaceable via an adjusting device (30; 34) having an actuator (31; 35) with a movement component (32; dz?; dz?) perpendicular to a facet reflection plane (xy; x?y?; x?y?). This results in a facet mirror with which given requirements made of complying with desired illumination predefinitions that are to be achieved during the use of the facet mirror are achieved with lower production outlay in comparison with the prior art.

Abstract: The disclosure relates to a method of manufacturing a projection objective, and a projection objective, such as a projection objective configured to be used in a microlithographic process. The method can include defining an initial design for the projection objective and optimizing the design using a merit function. The method can be used in the manufacturing of projection objectives which may be used in a microlithographic process of manufacturing miniaturized devices.

Abstract: The invention relates to a filter device for an illumination system, especially for the correction of the illumination of the illuminating pupil, including a light source, with the illumination system being passed through by a bundle of illuminating rays from the light source to an object plane, with the bundle of illuminating rays impinging upon the filter device, including at least one filter element which can be introduced into the beam path of the bundle of illuminating rays, with the filter element including an actuating device, so that the filter element can be brought with the help of the actuating device into the bundle of illuminating rays.

Abstract: A projection lens of a projection exposure apparatus, for imaging a mask which can be positioned in an object plane onto a light-sensitive layer which can be positioned in an image plane, includes a housing, in which at least one optical element is arranged, at least one partial housing which is arranged within said housing and which at least regionally surrounds light passing from the object plane as far as the image plane during the operation of the projection lens, and a reflective structure, which reduces a light proportion which reaches the image plane after reflection at the at least one partial housing, by comparison with an analogous arrangement without said reflective structure.

Abstract: The disclosure relates to a connecting arrangement for an optical device, such as in microlithography. The connecting arrangement includes a first body, a second body and a connecting device. The first body contacts the second body in a laminar manner in a contact region. The connecting device is connected to the second body and contacts the first body via at least one contact unit. The connecting device is configured to generate a predefinable contact force in the contact region between the first body and the second body. The contact unit includes a plurality of separate contact elements. Each contact element is connected to the second body via a spring unit which can be elastically deformed to generate a contribution to the contact force.

Abstract: An illumination system for a microlithographic projection exposure apparatus includes an EUV light source which generates an emission beam of linearly polarized EUV illumination light. An illumination optics guides the emission beam along an optical axis which causes an illumination field in a reticle plane to be illuminated by the emission beam. The illumination system also includes an illumination subunit of the illumination system. The illumination subunit includes at least the EUV light source and a polarization setting device for setting a defined polarization of the EUV emission beam of the illumination subunit.

Abstract: An imaging optics is provided for lithographic projection exposure for guiding a bundle of imaging light with a wavelength shorter than 193 nm via a plurality of mirrors for beam-splitter-free imaging of a reflective object in an object field in an object plane into an image field in an image plane. An object field point has a central ray angle which is smaller than 3°. At least one of the mirrors is a near-field mirror. The imaging optics which can allow for high-quality imaging of a reflective object.

Abstract: A catadioptric projection objective for imaging a pattern onto an image plane includes: a first objective part for imaging the pattern into a first intermediate image; a second objective part for imaging the first intermediate image into a second intermediate image; and a third objective part for imaging the second intermediate image onto the image plane. A first concave mirror having a continuous mirror surface and a second concave mirror having a continuous mirror surface are upstream of the second intermediate image. A pupil surface is formed between the object plane and the first intermediate image, between the first and the second intermediate image, and between the second intermediate image and the image plane. A plate having essentially parallel plate surfaces is positioned in the first objective part near the pupil surface. At least one plate surface is aspherized to correct for aberrations.

Abstract: A reflection mirror assembly for use in a catadioptric imaging optical system includes two curved reflection mirrors, each including a reflection surface expressed by equation (a), where y represents height in a direction perpendicular to the optical axis, z represents distance (sag amount) along the optical axis from a tangent plane at a vertex of the reflection surface to a position on the reflection surface at height y, r represents a vertex curvature radius, and R represents a conical coefficient; z=(y2/r)/[1+{1?(1+?)·y2/r2}1/2]??(a), wherein ?1<k<0.

Abstract: An optical projection unit comprising a first optical element module and at least one second optical element module is provided. The first optical element module comprises a first housing unit and at least a first optical element, the first optical element being received within the first housing unit and having an optically used first region defining a first optical axis. The at least one second optical element module is located adjacent to the first optical element module and comprises at least one second optical element, the second optical element defining a second optical axis of the optical projection unit. The first housing unit has a central first housing axis and an outer wall extending in a circumferential direction about the first housing axis. The first optical axis is at least one of laterally offset and inclined with respect to the first housing axis. Furthermore, the first housing axis is substantially collinear with the second optical axis.

Abstract: Catadioptric projection objective (1) for microlithography for imaging an object field (3) in an object plane (5) onto an image field (7) in an image plane (9), including a first partial objective (11) imaging the object field onto a first real intermediate image (13), a second partial objective (15) imaging the first intermediate image onto a second real intermediate image (17) and a third partial objective (19) imaging the second intermediate image onto the image field (7). The second partial objective (15) has exactly one concave mirror (21) and at least one lens (23). The minimum distance between an optically utilized region of the concave mirror (21) and an optically utilized region of a surface (25)—facing the concave mirror—of a lens (23) adjacent to the concave mirror is greater than 10 mm.

Abstract: An illumination optical unit for projection lithography for illuminating an object field, in which an object to be imaged can be arranged, with illumination light has a field facet mirror having a plurality of field facets. A pupil facet mirror of the illumination optical unit has a plurality of pupil facets. The pupil facets serve for imaging the field facets respectively assigned individually to the pupil facets into the object field. An individual mirror array of the illumination optical unit has individual mirrors that can be tilted in driven fashion individually. The individual mirror array is arranged in an illumination light beam path upstream of the field facet mirror. This can result in flexibly configurable illumination by the illumination optical unit, this illumination being readily adaptable to predetermined values.

Abstract: An optical system of a microlithographic projection exposure apparatus permits comparatively flexible and fast influencing of the intensity distribution and/or the polarization state. The optical system includes at least one layer system that is at least one-side bounded by a lens or a mirror. The layer system is an interference layer system of several layers and has at least one liquid or gaseous layer portion with a maximum thickness of one micrometer (?m), and a manipulator for manipulation of the thickness profile of the layer portion.

Abstract: A method for examining at least one wafer (13) with regard to a contamination limit, in which the contamination potential of the resist (13a) of the wafer (13), which resist (13a) outgasses contaminating substances, is examined with regard to a contamination limit before the wafer (13) is exposed in an EUV projection exposure system (1). The method preferably includes: arranging the wafer (13) and/or a test disc coated with the same resist (13a) as the resist (13a) of the wafer (13) in a vacuum chamber (19), evacuating the vacuum chamber (19), and measuring the contamination potential of the contaminating substances outgassed from the wafer (13) in the evacuated vacuum chamber (19), and also comparing the contamination potential of the wafer (13) with a contamination limit. An EUV projection exposure system (1) for carrying out the method is also disclosed.