Abstract: In order to produce stress-reduced reflective optical elements (1) for an operating wave length in the soft X-ray and extreme ultraviolet wavelength range, in particular for use in EUV lithography, it is proposed to apply, between substrate (2) and a multilayer system (4) optimized for high reflectivity at the operating wavelength, a stress-reducing multilayer system (6) with the aid of particle-forming particles having an energy of 40 eV or more, preferably 90 eV or more. Resulting reflective optical elements are distinguished by low surface roughness, a low number of periods in the stress-reducing multilayer system and also high ? values of the stress-reducing multilayer system.

Abstract: An illumination optical unit for projection lithography for illuminating an object field, in which an object to be imaged can be arranged, with illumination light has a field facet mirror having a plurality of field facets. A pupil facet mirror of the illumination optical unit has a plurality of pupil facets. The pupil facets serve for imaging the field facets respectively assigned individually to the pupil facets into the object field. An individual mirror array of the illumination optical unit has individual mirrors that can be tilted in driven fashion individually. The individual mirror array is arranged in an illumination light beam path upstream of the field facet mirror. This can result in flexibly configurable illumination by the illumination optical unit, this illumination being readily adaptable to predetermined values.

Abstract: An imaging optics includes a plurality of mirrors which reflect imaging light to image an object field in an object plane into an image field in an image plane. A mirror body of at least one of the mirrors has a through-opening for the imaging light to pass through. The through-opening has an internal region of a smallest opening width in the mirror body. The through-opening expands from the internal region towards both edge regions of the mirror body. A disturbing influence of unused light portions is reduced or eliminated completely.

Abstract: A reflective optical element and an EUV lithography appliance containing one such element are provided, the appliance displaying a low propensity to contamination. The reflective optical element has a protective layer system includes at least two layers. The optical characteristics of the protective layer system are between those of a spacer and an absorber, or correspond to those of a spacer. The selection of a material with the smallest possible imaginary part and a real part which is as close to 1 as possible in terms of the refractive index leads to a plateau-type reflectivity course according to the thickness of the protective layer system between two thicknesses d1 and d2. The thickness of the protective layer system is selected in such a way that it is less than d2.

Abstract: Methods and systems for measuring a surface of an object are provided, wherein portions of the surface of the object are interferometrically measured and data representing a shape of the surface of the object are obtained by stitching the measurement data corresponding to each portion together. For measuring the individual portions of the surface of the object a variable light shaping member is utilized preferably constructed by arranging two diffraction gratings in a beam path of measuring light and appropriately displacing the two diffraction gratings relative to each other depending on a target shape of a particular portion of the surface of the object.

Abstract: In order to limit the negative effect of metal contamination on reflectivity within an EUV lithography device, a reflective optical element is proposed for the extreme ultraviolet and soft X-ray wavelength range with a reflective surface with an uppermost layer, in which the uppermost layer comprises one or more organic silicon compounds with a carbon-silicon and/or silicon-oxygen bond.

Abstract: A method is disclosed for improving an optical imaging property, for example spherical aberration or the focal length, of a projection objective of a microlithographic projection exposure apparatus. First, an immersion liquid is introduced into an interspace between a photosensitive surface and an end face of the projection objective. Then an imaging property of the projection objective is determined, for example using an interferometer or a CCD sensor arranged in an image plane of the projection objective. This imaging property is compared with a target imaging property. Finally, the temperature of the immersion liquid is changed until the determined imaging property is as close as possible to the target imaging property.

Abstract: An optical system, such as an illumination device or a projection objective of a microlithographic projection exposure apparatus, is disclosed. The optical system can include a polarization compensator which has at least one polarization-modifying partial element. The optical system can also include a manipulator by which the position of the at least one partial element can be altered. At least one operating mode of the optical system can be set in which the intensity, over a region which belongs to a plane perpendicular to the optical axis and which can be illuminated with light from the light source, does not exceed 20% of the maximum intensity in the plane, and the manipulator is arranged in the region.

Abstract: An optical apparatus includes an interchange mechanism and an optical assembly of an illumination system or a projection objective. At least one of the plurality of optical elements of the optical assembly is selected from among a plurality of ones selectable from the interchange mechanism which facilitates exchange of one for another in the beam path. To reduce transmission of vibration from the interchange mechanism to the optical assembly, the interchange mechanism is mounted on a structure which is substantially dynamically decoupled from the housing, and a selected selectable optical element is located at an operating position at which it is separate from the interchange mechanism.

Abstract: An immersion lithography apparatus includes a liquid supply system configured to supply a liquid to a space through which a beam of radiation passes, the liquid having an optical property that can be tuned by a tuner. The space may be located between the projection system and the substrate. The tuner is arranged to adjust one or more properties of the liquid such as the shape, composition, refractive index and/or absorptivity as a function of space and/or time in order to change the imaging performance of the lithography apparatus.

Abstract: An optical element has at least one additional element fitted thereon which dissipates the vibrational energy of the optical element by friction.

Abstract: In general, in a first aspect, the invention features a system that includes a microlithography projection optical system. The microlithography projection optical system includes a plurality of elements arranged so that during operation the plurality of elements image radiation at a wavelength ? from an object plane to an image plane. At least one of the elements is a reflective element that has a rotationally-asymmetric surface positioned in a path of the radiation. The rotationally-asymmetric surface deviates from a rotationally-symmetric reference surface by a distance of about ? or more at one or more locations of the rotationally-asymmetric surface.

Abstract: An illumination system of a microlithographic projection exposure apparatus can include at least one transmission filter which has a different transmittance at least at two positions and which is arranged between a pupil plane and a field plane). The transmittance distribution can be determined such that it has field dependent correcting effects on the ellipticity. In some embodiments the telecentricity and/or the irradiance uniformity is not affected by this correction.

Abstract: A microlithography projection objective includes an optical element, a manipulator configured to manipulate the optical element, and a control unit configured to control the manipulator. The control unit includes a first device configured to control movement of the manipulator, a memory comprising an upper bound for a range of movement of the manipulator, and a second device configured to generate a merit function based on a square of a root mean square (RMS) of at least one error and configured to minimize the merit function subordinate to the upper bound for the range of movement of the manipulator.

Abstract: A method for correcting at least one image defect of a projection objective of a lithography projection exposure machine, the projection objective comprising an optical arrangement composed of a plurality of lenses and at least one mirror, the at least one mirror having an optically operative surface that can be defective and is thus responsible for the at least one image defect, comprises the steps of: at least approximately determining a ratio VM of principal ray height hMH to marginal ray height hMR at the optically operative surface of the at least one mirror, at least approximately determining at least one optically operative lens surface among the lens surfaces of the lenses, at which the magnitude of a ratio VL of principal ray height hLH to marginal ray height hLR comes at least closest to the ratio VM, and selecting the at least one determined lens surface for the correction of the image defect.

Abstract: An optical arrangement includes a multiplicity of optical elements and a carrier structure which carries the optical elements. The carrier structure is composed of at least two releasably interconnected modules. Each module is composed of at least one carrier structure subelement. A subhousing is produced by a multiplicity of carrier structure subelements and/or modules. The subhousing has a geometry that varies, at least in regions, in correspondence to a usable beam path in the projection exposure apparatus, the usable beam path being defined as an envelope of all light bundles which can propagate from all field points in a field plane to an image plane of the projection exposure apparatus. A projection exposure apparatus for EUV lithography includes such an optical arrangement.

Abstract: An illumination system is used to illuminate a specified illumination field of an object surface with EUV radiation. The illumination system has an EUV source and a collector to concentrate the EUV radiation in the direction of an optical axis. A first optical element is provided to generate secondary light sources, and a second optical element is provided at the location of these secondary light sources, the second optical element being part of an optical device which includes further optical elements, and which images the first optical element into an image plane into the illumination field. Between the collector and the illumination field, a maximum of five reflecting optical elements are arranged. These optical elements reflect the main beam either grazingly or steeply. The optical axis, projected onto an illumination main plane, is deflected by more than 30° between a source axis portion and a field axis portion.

Abstract: A projection objective is disclosed. The projection objective can include a plurality of optical elements arranged to image a pattern from an object field in an object surface of the projection objective to an image field in an image surface of the projection objective with electromagnetic operating radiation from a wavelength band around an operating wavelength ?. The plurality of optical elements can include an optical correction plate that includes a body comprising a material transparent to the operating radiation, the body having a first optical surface, a second optical surface, a plate normal substantially perpendicular to the first and second optical surfaces, and a thickness profile defined as a distance between the first and second optical surfaces measured parallel to the plate normal. The first optical surface can have a non-rotationally symmetric aspheric first surface profile with a first peak-to-valley value PV1>?.

Abstract: A projection illumination system with a plurality of optical components (29, 32) includes an interferometer arrangement (37) whose components are arranged outside a projection beam path (17) of the projection illumination system. Measurement radiation of the interferometer arrangement strikes a surface (35) of the optical component (29) to be measured under a large angle of incidence (?). Actuators (83, 87) of the projection illumination system can be actuated as a function of a measurement radiation intensity distribution detected using the interferometer arrangement in order to change imaging characteristics of the projection illumination system and to keep them stable in particular also with respect to drifting.

Abstract: An optical arrangement includes at least one optical element and a support element for the optical element. The optical element and the support element are connected together by way of at least three decoupling elements. The decoupling elements are formed monolithically with the optical element and with the support element.