Abstract: A method for manufacturing a preferably asymmetrical lens element (5a) from a tempered blank (1) is characterized by: producing the lens element (5a) from a first partial volume (1a) of the tempered blank (1), whose thickness d is less than approximately 70%, preferably less than approximately 60%, particularly preferably less than approximately 50% of the thickness D of the tempered blank (1). Preferably, from a second partial volume (1b) of the tempered blank (1) at least a further lens element (5a?) is produced, wherein before the lens elements (5a, 5a?) are produced the tempered blank (1) is divided into the first and second partial volume (1a, 1b).
Abstract: The disclosure provides an illumination optical system for microlithography that is designed so that, even with a change of illumination setting (e.g., a change in the given illumination conditions in the object field), variation of illumination parameters over the object field is confined within predetermined tolerances.
Type:
Grant
Filed:
September 19, 2008
Date of Patent:
May 8, 2012
Assignee:
Carl Zeiss SMT GmbH
Inventors:
Jens Ossmann, Martin Endres, Ralf Stuetzle
Abstract: A method for correcting at least one image defect of a projection objective of a lithography projection exposure machine, the projection objective comprising an optical arrangement composed of a plurality of lenses and at least one mirror, the at least one mirror having an optically operative surface that can be defective and is thus responsible for the at least one image defect, comprises the steps of: at least approximately determining a ratio VM of principal ray height hMH to marginal ray height hMR at the optically operative surface of the at least one mirror, at least approximately determining at least one optically operative lens surface among the lens surfaces of the lenses, at which the magnitude of a ratio VL of principal ray height hLH to marginal ray height hLR comes at least closest to the ratio VM, and selecting the at least one determined lens surface for the correction of the image defect.
Type:
Grant
Filed:
July 20, 2011
Date of Patent:
May 8, 2012
Assignee:
Carl Zeiss SMT GmbH
Inventors:
Wilhelm Ulrich, Thomas Okon, Norbert Wabra, Toralf Gruner, Boris Bittner, Volker Graeschus
Abstract: An immersion lithography apparatus includes a liquid supply system configured to supply a liquid to a space through which a beam of radiation passes, the liquid having an optical property that can be tuned by a tuner. The space may be located between the projection system and the substrate. The tuner is arranged to adjust one or more properties of the liquid such as the shape, composition, refractive index and/or absorptivity as a function of space and/or time in order to change the imaging performance of the lithography apparatus.
Type:
Grant
Filed:
September 9, 2008
Date of Patent:
May 8, 2012
Assignees:
ASML Netherlands B.V., Carl Zeiss SMT AG
Inventors:
Johannes Catharinus Hubertus Mulkens, Johannes Jacobus Matheus Baselmans, Paul Graupner, Erik Roelof Loopstra, Bob Streefkerk
Abstract: A microlithographic projection exposure apparatus includes an optical surface and a measurement device which measures a parameter related to the optical surface at a plurality of separated areas on the optical surface. The measurement device includes an illumination unit which directs individual measuring light beams towards the areas on the optical surface. Each measuring light beam illuminates at least a portion of an area, which is associated with the measuring light beam, and at least a portion of an adjacent area which is not associated with the measuring light beam. A detector unit measures a property for each measuring light beam after it has interacted with the optical surface.
Abstract: A particle-optical arrangement comprises a charged-particle source for generating a beam of charged particles; a multi-aperture plate arranged in a beam path of the beam of charged particles, wherein the multi-aperture plate has a plurality of apertures formed therein in a predetermined first array pattern, wherein a plurality of charged-particle beamlets is formed from the beam of charged particles downstream of the multi-aperture plate, and wherein a plurality of beam spots is formed in an image plane of the apparatus by the plurality of beamlets, the plurality of beam spots being arranged in a second array pattern; and a particle-optical element for manipulating the beam of charged particles and/or the plurality of beamlets; wherein the first array pattern has a first pattern regularity in a first direction, and the second array pattern has a second pattern regularity in a second direction electron-optically corresponding to the first direction, and wherein the second regularity is higher than the first re
Type:
Application
Filed:
December 31, 2011
Publication date:
May 3, 2012
Applicants:
Applied Materials Israel Ltd., Carl Zeiss SMT GmbH
Inventors:
Rainer KNIPPELMEYER, Oliver KIENZLE, Thomas KEMEN, Heiko MUELLER, Stephan UHLEMANN, Maximilian HAIDER, Antonio CASARES, Steven ROGERS
Abstract: Disclosed is a lens module, especially a projection lens for semiconductor lithography, comprising at least one replaceable optical element that is disposed in a lens housing. At least one gas exchange device is positioned in an area of the replaceable optical element in such a way that a receiving zone for the replaceable optical element can be flushed when the optical element is replaced.
Type:
Application
Filed:
January 9, 2012
Publication date:
May 3, 2012
Applicant:
CARL ZEISS SMT GMBH
Inventors:
Guido SOYEZ, Stephan BACK, Joachim BUECHELE, Julian KALLER, Guido LIMBACH, Harald WOELFLE
Abstract: An illumination system of a microlithographic projection exposure apparatus can include at least one transmission filter which has a different transmittance at least at two positions and which is arranged between a pupil plane and a field plane). The transmittance distribution can be determined such that it has field dependent correcting effects on the ellipticity. In some embodiments the telecentricity and/or the irradiance uniformity is not affected by this correction.
Type:
Grant
Filed:
July 27, 2009
Date of Patent:
May 1, 2012
Assignee:
Carl Zeiss SMT GmbH
Inventors:
Nils Dieckmann, Manfred Maul, Christian Hettich, Oliver Natt
Abstract: The disclosure relates to an optical apparatus including a light source that emits light in the form of light pulses having a pulse frequency, and including at least one optical element. The disclosure also relates to a projection exposure machine including a pulsed light source and a projection objective, and to a method for modifying the imaging behavior of such an apparatus, such as in a projection exposure machine.
Type:
Grant
Filed:
January 21, 2009
Date of Patent:
May 1, 2012
Assignee:
Carl Zeiss SMT GmbH
Inventors:
Martin Schriever, Ulrich Wegmann, Stefan Hembacher, Bernhard Geuppert, Juergen Huber, Norbert Kerwien, Michael Totzeck, Markus Hauf
Abstract: In general, in a first aspect, the invention features a system that includes a microlithography projection optical system. The microlithography projection optical system includes a plurality of elements arranged so that during operation the plurality of elements image radiation at a wavelength ? from an object plane to an image plane. At least one of the elements is a reflective element that has a rotationally-asymmetric surface positioned in a path of the radiation. The rotationally-asymmetric surface deviates from a rotationally-symmetric reference surface by a distance of about ? or more at one or more locations of the rotationally-asymmetric surface.
Type:
Grant
Filed:
May 28, 2009
Date of Patent:
May 1, 2012
Assignee:
Carl Zeiss SMT GmbH
Inventors:
Hans-Juergen Mann, Wilhelm Ulrich, Marco Pretorius
Abstract: The present invention relates to an apparatus for influencing a light beam arrangement comprising a plurality of light beams (4) arranged alongside one another, wherein provision is made of at least one optical element (5, 15, 25) which is movable transversely with respect to the light beams and by which the light beams can be influenced if the light beams pass through the optical element, and which has at least one light-absorbing region (9, 19, 29), wherein the apparatus comprises a drive device for the optical element, a measuring device for detecting the light of the light beam and a control unit, wherein the control unit is designed such that the drive device is controlled in a manner dependent on the position of the light-absorbing region.
Abstract: An imaging microoptics, which is compact and robust, includes at least one aspherical member and has a folded beam path. The imaging microoptics provides a magnification |??| of >800 by magnitude. Furthermore, a system for positioning a wafer with respect to a projection optics includes the imaging microoptics, an image sensor positionable in the image plane of the imaging microoptics, for measuring a position of an aerial image of the projection optics, and a wafer stage with an actuator and a controller for positioning the wafer in dependence of an output signal of the image sensor.
Abstract: An optical element, especially a normal-incidence collector mirror, for radiation in the EUV and/or soft X-ray region of wavelengths is described. The element has a substrate, a multilayer coating with an optically active region, and a capacitor, having a first and a second capacitor electrode. At least one layer of the multilayer coating serves as the first capacitor electrode. At least one dielectric layer is provided between the two capacitor electrodes. Also described is an optical system with at least one optical element, having a first electrode arranged in the vicinity of the optical element.
Type:
Grant
Filed:
November 24, 2009
Date of Patent:
April 24, 2012
Assignee:
Carl Zeiss SMT GmbH
Inventors:
Marco Wedowski, Nadyeh Shariloo, legal representative, Markus Weiss, Stephan Muellender, Johann Trenkler, Hartmut Enkisch, Gisela Sipos, Hubert Adriaan van Mierlo, Michiel David Nijkerk, Fokko Pieter Wieringa
Abstract: A transmitting optical element of polycrystalline material that includes crystallites of magnesium spinel MgAl2O4 or lutetium-aluminum garnet Lu3Al5O12, wherein the polycrystalline material includes an average total concentration of foreign element contamination caused by Y, Sc, Co, Ni, Zr, Mo, Sn and/or Nb of less than 50 ppm, preferably of less than 20 ppm, and more preferably of less than 15 ppm.
Abstract: A method for processing the surface of a component, or the processing of an optical element through an ion beam, directed onto the surface to be processed, so that the surface is lowered and/or removed at least partially, wherein the ions have a kinetic energy of 100 keV or more, as well as optical elements processed by the method.
Type:
Grant
Filed:
December 4, 2007
Date of Patent:
April 24, 2012
Assignee:
CARL ZEISS SMT GmbH
Inventors:
Martin Weiser, Stefan Burkart, Holger Maltor
Abstract: An illumination system for illuminating a mask in a microlithographic projection exposure apparatus includes an array of mirrors or other beam deflecting elements. Each beam deflecting element produces on the surface a projection light spot at a position that is variable by changing a deflection angle produced by the beam deflecting element. A spot shape measuring unit measures the shapes of spots which are produced on the spot measuring unit by the beam deflecting elements. The spot shape measuring unit is arranged outside of every possible path projection light is allowed to take between the array and the mask. A control unit controls the beam deflecting elements such that, at a given instant during an exposure operation of the apparatus, at least one beam deflecting element directs projection light exclusively on the spot shape measuring unit, and at least some beam deflecting elements direct projection light exclusively on the surface.
Abstract: The disclosure relates to a microlithographic projection exposure apparatus and a microlithographic projection exposure apparatus, as well as related components, methods and articles made by the methods. The microlithographic projection exposure apparatus includes an illumination system and a projection objective. The illumination system can illuminate a mask arranged in an object plane of the projection objective. The mask can have structures which are to be imaged. The method can include illuminating a pupil plane of the illumination system with light. The method can also include modifying, in a plane of the projection objective, the phase, amplitude and/or polarization of the light passing through that plane. The modification can be effected for at least two diffraction orders in mutually different ways. A mask-induced loss in image contrast obtained in the imaging of the structures can be reduced compared to a method without the modification.
Type:
Application
Filed:
December 21, 2011
Publication date:
April 19, 2012
Applicant:
CARL ZEISS SMT GMBH
Inventors:
Michael Totzeck, Aksel Goehnermeier, Wolfgang Singer, Helmut Beierl, Heiko Feldmann, Hans-Juergen Mann, Jochen Hetzler
Abstract: A method measuring the birefringence of an object. A measurement beam having a defined input polarization state is generated, the measurement beam being directed onto the object. Polarization properties of the measurement beam after interaction with the object are detected in order to generate polarization measurement values representing an output polarization state of the measurement beam after interaction with the object. The input polarization state of the measurement beam is modulated into at least four different measurement states in accordance with a periodic modulation function of an angle parameter ?, and the polarization measurement values associated with the at least four measurement states are processed to form a measurement function dependent on the angle parameter ?. A two-wave portion of the measurement function is determined and analysed in order to derive at least one birefringence parameter describing the birefringence, preferably by double Fourier transformation of the measurement function.
Abstract: A method of aligning at least two wave shaping elements, a method of measuring a deviation of an optical surface from a target shape and a measuring apparatus for interferometrically measuring a deviation of an optical surface from a target shape.
Type:
Grant
Filed:
February 18, 2011
Date of Patent:
April 17, 2012
Assignee:
Carl Zeiss SMT GmbH
Inventors:
Ralf Arnold, Stefan Schulte, Bernd Doerband
Abstract: The disclosure relates to a microlithography projection exposure system having optical corrective elements configured to modify the imaging characteristics, as well as related systems and components.
Type:
Grant
Filed:
July 11, 2008
Date of Patent:
April 17, 2012
Assignee:
Carl Zeiss SMT GmbH
Inventors:
Franz Sorg, Peter Deufel, Toralf Gruner