Abstract: A method of fabricating a thin film transistor for an active matrix display using reduced masking operations includes patterning a gate on a substrate. A gate dielectric is formed over the gate and a semiconducting metal oxide is deposited on the gate dielectric. A channel protection layer is patterned on the semiconducting metal oxide overlying the gate to define a channel area and to expose the remaining semiconducting metal oxide. A source/drain metal layer is deposited on the structure and etched through to the channel protection layer above the gate to separate the source/drain metal layer into source and drain terminals and the source/drain metal layer and the semiconducting metal oxide are etched through at the periphery to isolate the transistor. A nonconductive spacer is patterned on the transistor and portions of the surrounding source/drain metal layer.

Abstract: A method of fabricating metal oxide TFTs on transparent substrates includes the steps of positioning an opaque gate metal area on the front surface of the substrate, depositing transparent gate dielectric and transparent metal oxide semiconductor layers overlying the gate metal and a surrounding area, depositing transparent passivation material on the semiconductor material, depositing photoresist on the passivation material, exposing and developing the photoresist to remove exposed portions, etching the passivation material to leave a passivation area defining a channel area, depositing transparent conductive material over the passivation area, depositing photoresist over the conductive material, exposing and developing the photoresist to remove unexposed portions, and etching the conductive material to leave source and drain areas on opposed sides of the channel area.

Abstract: A full-color active matrix organic light emitting display including a transparent substrate, a color filter positioned on an upper surface of the substrate, a spacer layer formed on the upper surface of the color filter, a metal oxide thin film transistor backpanel formed on the spacer layer and defining an array of pixels, and an array of single color, organic light emitting devices formed on the backpanel and positioned to emit light downwardly through the backpanel, the spacer layer, the color filter, and the substrate in a full-color display.

Abstract: An electro-optic display includes a “matrix” for confining moving elements of the display (e.g., rotating or twisting elements). The matrix (or at least the viewable portions thereof) may have a high reflectivity, comparable to that of white paper. This results in an overall “whiter” or brighter display. The matrix may include channels to facilitate inter-cell fluid transport and high-density element packing. In some cases, the matrix elements provide a hexagonal arrangement of cells for holding the rotating elements. The rotating elements of the display may be electrically and optically anisotropic hemispherically coated spheres. The hemispherical coating typically provides the necessary charge to create electrical anisotropy.

Abstract: Two-terminal switching devices characterized by high on/off current ratios and by high breakdown voltage are provided. These devices can be employed as switches in the driving circuits of active matrix displays, e.g., in electrophoretic, rotating element and liquid crystal displays. The switching devices include two electrodes, and a layer of a broad band semiconducting material residing between the electrodes. According to one example, the cathode comprises a metal having a low work function, the anode comprises an organic material having a p+ or p++ type of conductivity, and the broad band semiconductor comprises a metal oxide. The work function difference between the cathode and the anode material is preferably at least about 0.6 eV. The on/off current ratios of at least 10,000 over a voltage range of about 15 V can be achieved. The devices can be formed, if desired, on flexible polymeric substrates having low melting points.

Abstract: An electro-optic display includes a “matrix” for confining moving elements of the display (e.g., rotating or twisting elements). The matrix (or at least the viewable portions thereof) may have a high reflectivity, comparable to that of white paper. This results in an overall “whiter” or brighter display. The matrix may include channels to facilitate inter-cell fluid transport and high-density element packing. In some cases, the matrix elements provide a hexagonal arrangement of cells for holding the rotating elements. The rotating elements of the display may be electrically and optically anisotropic hemispherically coated spheres. The hemispherical coating typically provides the necessary charge to create electrical anisotropy.

Abstract: Two-terminal switching devices characterized by high on/off current ratios and by high breakdown voltage are provided. These devices can be employed as switches in the driving circuits of active matrix displays, e.g., in electrophoretic, rotataing element and liquid crystal displays. The switching devices include two electrodes, and a layer of a broad band semiconducting material residing between the electrodes. According to one example, the cathode comprises a metal having a low work function, the anode comprises an organic material having a p+ or p++ type of conductivity, and the broad band semiconductor comprises a metal oxide. The work function difference between the cathode and the anode material is preferably at least about 0.6 eV. The on/off current ratios of at least 10,000 over a voltage range of about 15 V can be achieved. The devices can be formed, if desired, on flexible polymeric substrates having low melting points.

Abstract: A fabrication method is used in conjunction with a semiconductor device having a metal oxide active layer less than 100 nm thick and the upper major surface and the lower major surface have material in abutting engagement to form underlying interfaces and overlying interfaces. The method of fabrication includes controlling interfacial interactions in the underlying interfaces and the overlying interfaces to adjust the carrier density in the adjacent metal oxide by selecting a metal oxide for the metal oxide active layer and by selecting a specific material for the material in abutting engagement. The method also includes one or both steps of controlling interactions in underlying interfaces by surface treatment of an underlying material forming a component of the underlying interface and controlling interactions in overlying interfaces by surface treatment of the metal oxide film performed prior to deposition of material on the metal oxide layer.

Abstract: A multilayer film formed by a solution process. The multilayer film includes a plurality of basic film structures positioned in contiguous overlying relationship to form a common multilayer film. Each of the plurality of basic film structures includes one of: a first two-layer structure with a first layer including either a polymer material or an organic material and a second layer including a functionalized inorganic material; a second two-layer structure with a first layer including either a polymer material or an organic material and a second layer including either a polymer binder and/or an organic binder; and a three layer structure with a first layer including either a polymer material or an organic material, a second layer including a functionalized inorganic material, and a third layer including one of a polymer binder and/or an organic binder.

Abstract: A high performance thin film transistor includes a flexible substrate, a layer of metal oxide semiconductor material deposited on the flexible substrate, and a layer of self-assembled organic gate dielectric material deposited on the metal oxide semiconductor material. The metal oxide semiconductor material has high carrier mobility and is transparent. An interface is formed between the layer of metal oxide semiconductor material and the layer of organic gate dielectric material that is substantially free of reactions and Fermi level pinning. The polymer materials are not polar and do not give rise to gap state formation and interface scattering.

Abstract: A transmissive electro-optic display includes a substantially transparent front plane and back plane element. The back plane element includes a plurality of electrodes distributed in two dimensions on the backplane, each allowing independent control of a discrete region of the display. The front plane element includes at least one electrode disposed opposite the back plane, and is spaced apart from the back plane element by an interior wall defining a plurality of cells therebetween. A plurality of partially conductive and optically anisotropic elements is rotatably disposed in the plurality of cells, together with a dielectric fluid. When an appropriate electric field and/or a magnetic field is applied to the cells, the corresponding anisotropic elements are caused rotate between a “transmissive” state and an “opaque” state.

Abstract: A method for partially coating a structure having one or more small protruding features is provided. The method includes: (a) providing a structure comprising a base and a protruding feature attached to the base of the structure, the feature having a diameter or width of about 1 mm or less; (b) contacting the protruding feature with a substantially uniform layer of viscous coating material, the layer having a pre-determined thickness, to transfer at least some of the coating material from the layer of coating material to the protruding feature, without contacting the base of the structure with the layer of viscous coating material; and (c) separating the structure from the layer of coating material to form a substantially uniformly coated protruding feature, wherein the coating occupies a desired pre-determined area on the feature.

Abstract: A multilayer film formed by a solution process. The multilayer film includes a plurality of basic film structures positioned in contiguous overlying relationship to form a common multilayer film. Each of the plurality of basic film structures includes one of: a first two-layer structure with a first layer including either a polymer material or an organic material and a second layer including a functionalized inorganic material; a second two-layer structure with a first layer including either a polymer material or an organic material and a second layer including either a polymer binder and/or an organic binder; and a three layer structure with a first layer including either a polymer material or an organic material, a second layer including a functionalized inorganic material, and a third layer including one of a polymer binder and/or an organic binder.

Abstract: A method of fabricating self-aligned metal oxide TFTs on transparent flexible substrates is disclosed and includes the steps of providing a transparent flexible substrate with at least an opaque first metal TFT electrode in a supporting relationship on the front surface of the substrate and a layer of transparent material, including at least one of a metal oxide semiconductor and/or a gate dielectric, on the front surface of the substrate and the first metal TFT electrode. A layer of photoresist is positioned in overlying relationship to the layer of transparent material. Dual photo masks are positioned over the front and rear surfaces of the substrate, respectively, and the layer of photoresist is exposed. The layer of photoresist is developed and used to form a layer of second metal.

Abstract: A display is disclosed. The display includes a plurality of pixels configured to emit light. The display also includes a plurality of pixel control circuits that are each configured to regulate emission of light from a pixel. The pixel control circuits each include one or more two-terminal switching devices that include an organic semiconductor.

Abstract: A display is disclosed. The display includes a plurality of pixels configured to emit light. The display also includes a plurality of pixel control circuits that are each configured to regulate emission of light from a pixel. The pixel control circuits each include one or more two-terminal switching devices that include an organic semiconductor.

Abstract: A display is disclosed. The display includes a plurality of pixels configured to emit light. The display also includes a plurality of pixel control circuits that are each configured to regulate emission of light from a pixel. The pixel control circuits each include one or more two-terminal switching devices that include an organic semiconductor.