Patents Assigned to Central Research Institute of Electric Power Industry
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Patent number: 9190690Abstract: A molten carbonate fuel cell, which makes a separator unnecessary, cuts down the number of components, and markedly reduces the costs, is provided. In the cell, a cathode, an electrolyte plate holding an electrolyte, and an anode are provided concentrically with a tube body, the electrolyte plate is held by the anode, and the electrolyte plate is sandwiched between the anode and the cathode, so that the cell is constructed without the use of a separator.Type: GrantFiled: February 26, 2013Date of Patent: November 17, 2015Assignee: CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRYInventor: Makoto Kawase
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Patent number: 8997665Abstract: A leading end located in a two-stage entrained-flow bed coal gasifier has a double-walled structure including an outer cylinder and an inner cylinder, and cooling water for cooling the leading end is supplied through an interior of the inner cylinder to cool the leading end and is then returned to a base end through a space formed between the outer cylinder and the inner cylinder. The space formed between the outer cylinder and the inner cylinder has a smaller channel area than the interior of the inner cylinder, and a swirling flow along a guide formed on an outer circumferential surface of the inner cylinder and a substantially linear flow in a longitudinal direction of the outer cylinder and the inner cylinder are applied to the cooling water returned to the base end through the space formed between the outer cylinder and the inner cylinder.Type: GrantFiled: October 5, 2009Date of Patent: April 7, 2015Assignees: Mitsubishi Hitachi Power Systems, Ltd., Joban Joint Power Co., Ltd., Hokkaido Electric Power Company, Incorporated, Tohoku Electric Power Co., Inc., The Tokyo Electric Power Company, Incorporated, Chubu Electric Power Co. Inc., Hokuriku Electric Power Company, The Kansai Electric Power Co., Inc., The Chugoku Electric Power Co., Inc., Shikoku Electric Power Co., Inc., Kyushu Electric Power Co., Inc., Electric Power Development Co., Ltd., Central Research Institute of Electric Power IndustryInventors: Shinya Hamasaki, Toshimi Ohtsuka, Yoshinori Koyama, Katsuhiko Yokohama, Yasunari Shibata, Jun Kasai
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Patent number: 8843318Abstract: To measure salinity and water temperature in a marine surface layer using data obtained by a marine radar, a deviation ?S' between effect of an ocean wave on received power RSI0? in a reference time zone and effect of the ocean wave on received power RSIm? in a measurement time zone is estimated, a deviation ?s? between effect of the ocean wave on the received power RSI0? in the reference time zone and effect of the ocean wave on the received power in an electrical conductivity variable time zone is estimated, a regression function f(?) of a relationship between received power obtained by subtracting the deviation ?s? from the received power in the electrical conductivity variable time zone and electrical conductivity ? in the electrical conductivity variable time zone is estimated, and a value of electrical conductivity ?c in a measurement time zone is estimated, thereby calculating practical salinity.Type: GrantFiled: June 16, 2010Date of Patent: September 23, 2014Assignee: Central Research Institute of Electric Power IndustryInventor: Takumi Yoshii
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Patent number: 8815708Abstract: A method for improving the quality of a SiC layer by effectively reducing or eliminating the carrier trapping centers in the as-grown SiC crystal. The method includes the steps of: (a) carrying out ion implantation of carbon atoms, silicon atoms, hydrogen atoms, or helium atoms into a shallow surface layer of the SiC crystal layer to introduce carbon interstitials into the surface layer, and (b) growing the SiC layer upward from the edge face of the surface layer into which the carbon interstitials have been introduced, and diffusing out the carbon interstitials that have been introduced into the surface layer from the surface layer into the grown layer and combining the carbon interstitials and point defects to make the electrically active point defects in the grown layer inactive.Type: GrantFiled: March 16, 2010Date of Patent: August 26, 2014Assignee: Central Research Institute of Electric Power IndustryInventors: Hidekazu Tsuchida, Liutauras Storasta
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Patent number: 8783364Abstract: A gas hydrate is produced by injecting guest molecules into voids in a layer of which temperature and pressure condition allows the guest molecules to cause to form hydrate, in a form of emulsion where liquid of the guest molecules is dispersed in water as minute particles having a size of less than a size of voids, and thereby dispersing the guest molecules uniformly into the voids in the layer.Type: GrantFiled: August 25, 2006Date of Patent: July 22, 2014Assignee: Central Research Institute of Electric Power IndustryInventor: Yojiro Ikegawa
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Patent number: 8716718Abstract: An epitaxial SiC single crystal substrate including a SiC single crystal wafer whose main surface is a c-plane or a surface that inclines a c-plane with an angle of inclination that is more than 0 degree but less than 10 degrees, and SiC epitaxial film that is formed on the main surface of the SiC single crystal wafer, wherein the dislocation array density of threading edge dislocation arrays that are formed in the SiC epitaxial film is 10 arrays/cm2 or less.Type: GrantFiled: September 14, 2012Date of Patent: May 6, 2014Assignees: Showa Denko K.K., National Institute of Advanced Industrial Science and Technology, Central Research Institute of Electric Power IndustryInventors: Kenji Momose, Michiya Odawara, Keiichi Matsuzawa, Hajime Okumura, Kazutoshi Kojima, Yuuki Ishida, Hidekazu Tsuchida, Isaho Kamata
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Patent number: 8649198Abstract: Disclosed is a power conversion device which achieves reductions in switching loss due to a reverse recovery current and heat generation loss. Specifically disclosed is a power conversion device provided with a cascode element configured by electrically connecting a normally-on switching element and a normally-off switching element in series and connecting a gate terminal of the normally-on switching element and a source terminal of the normally-off switching element via a cascode connection diode, and a high-speed diode electrically connected in parallel with the cascode element and having a cathode region connected to a positive electrode terminal and an anode region connected to a negative electrode terminal.Type: GrantFiled: December 20, 2011Date of Patent: February 11, 2014Assignees: Kabushiki Kaisha Toshiba, Central Research Institute of Electric Power IndustryInventors: Atsuhiko Kuzumaki, Hiroshi Mochikawa, Takeru Murao, Masahiro Takasaki, Tadao Ishikawa, Toshiaki Kikuma
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Patent number: 8636818Abstract: An apparatus which includes: a carbonizer (1) which pyrolyzes a biomass to yield a pyrolysis gas and a carbonization product; a furnace (2) in which the carbonization product supplied from the carbonizer (1) is burned; a closed vessel (3) which is disposed in the furnace (2) and holds therein a carbonate (4) which has been melted by the heat generated by the carbonization product burned in the furnace (2); an introduction pipe (5) disposed so that the pyrolysis gas is introduced into the molten carbonate (4) in the closed vessel (3); and a fuel gas supply pipe (6) disposed so that a fuel gas, which is the pyrolysis gas sent through the introduction pipe (5), passed through the molten carbonate (4), and purified by reaction with the molten carbonate (4), is sent from the closed vessel (3) to the outside of the furnace (2).Type: GrantFiled: January 21, 2009Date of Patent: January 28, 2014Assignee: Central Research Institute of Electric Power IndustryInventors: Makoto Kawase, Kazuyoshi Ichikawa, Maromu Ohtaka, Hiroshi Morita
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Solid polymer electrolyte battery and method for manufacturing positive electrode sheet used therein
Patent number: 8592090Abstract: An organic electrolyte battery (10) including positive electrode material (2) and negative electrode material (4) and, interposed therebetween, organic electrolyte (6), wherein positive electrode active material particles (8) as a constituent of the positive electrode have surfaces at least partially coated with attachment (12) with electronic conductance and ionic conductance not easily oxidized even when supplied with oxygen from the positive electrode active material. The above attachment (12) is composed of microparticles of inorganic solid electrolyte with ionic conductance (14) and microparticles of conductive material with electronic conductance (16).Type: GrantFiled: May 18, 2005Date of Patent: November 26, 2013Assignee: Central Research Institute of Electric Power IndustryInventors: Hajime Miyashiro, Yo Kobayashi, Shiro Seki, Toru Iwahori -
Publication number: 20130259740Abstract: A system for treating a selenium-containing liquid, a wet flue gas desulfurization device, and a method for treating a selenium-containing liquid treat a selenium-containing liquid by adding bivalent manganese to the selenium-containing liquid, thereby suppressing oxidation of tetravalent selenium to hexavalent selenium. The system includes: a potential measurement unit for measuring an oxidation-reduction potential of the selenium-containing liquid, and a pH measurement unit for measuring a pH value of the selenium-containing liquid; a detection unit for detecting whether or not the selenium-containing liquid is in a state where selenium stabilizes at a valence of 4 or higher, based on the measured oxidation-reduction potential and the measured pH value; and an addition unit for adding bivalent manganese into the selenium-containing liquid when the selenium-containing liquid is in a state where selenium stabilizes at a valence of 4 or higher.Type: ApplicationFiled: March 12, 2013Publication date: October 3, 2013Applicant: CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRYInventor: CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY
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Publication number: 20130224621Abstract: A molten carbonate fuel cell, which makes a separator unnecessary, cuts down the number of components, and markedly reduces the costs, is provided. In the cell, a cathode, an electrolyte plate holding an electrolyte, and an anode are provided concentrically with a tube body, the electrolyte plate is held by the anode, and the electrolyte plate is sandwiched between the anode and the cathode, so that the cell is constructed without the use of a separator.Type: ApplicationFiled: February 26, 2013Publication date: August 29, 2013Applicant: CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRYInventor: CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY
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Patent number: 8480766Abstract: Gasification equipment with a gasification furnace which maintains a. high cold gas efficiency, and suppresses a temperature rise of the gasification gas to minimize ash deposition is disclosed. A part of a CO2 gas separated from an exhaust of a power generation plant is compressed by a. recovered CO2 compressor 25. The compressed CO2 gas is used for transport of coal (pulverized coal). The CO2 gas is supplied, together with the pulverized coal, into a gasification furnace to accelerate the formation of CO by an endothermic reaction between C and CO2 and suppress a temperature raise within a coal gasification furnace 15, thereby producing a gasification gas.Type: GrantFiled: May 19, 2008Date of Patent: July 9, 2013Assignee: Central Research Institute of Electric Power IndustryInventors: Hiroaki Watanabe, Toshio Abe
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Publication number: 20130152853Abstract: A film-forming apparatus 100 supplies a plurality of gases toward a substrate 101 in a chamber 103 using a shower plate 124. The shower plate 124 has a plurality of gas flow paths 121 extending within the shower plate along a first face of the substrate 101 side and connected to gas pipes 131 supplying a plurality of gases, and a plurality of gas jetting holes 129 bored such that the plurality of gas flow paths 121 and the chamber 103 communicate with each other on the first face side. In the film-forming apparatus 100, the plurality of gases supplied from the gas pipes 131 to the plurality of gas flow paths 121 of the shower plate 124 are supplied from the gas jetting holes 129 to the substrate 101 without being mixed inside of and vicinity of the shower plate 124.Type: ApplicationFiled: December 14, 2012Publication date: June 20, 2013Applicants: Denso Corporation, Central Research Institute of Electric Power Industry, NuFlare Technology, Inc.Inventors: NuFlare Technology, Inc., Central Research Institute of Electric Power Industry, Denso Corporation, Ayumu ADACHI, Koichi NISHIKAWA
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Patent number: 8455269Abstract: In a bipolar semiconductor device such that electrons and holes are recombined in a silicon carbide epitaxial film grown from the surface of a silicon carbide single crystal substrate at the time of on-state forward bias operation; an on-state forward voltage increased in a silicon carbide bipolar semiconductor device is recovered by shrinking the stacking fault area enlarged by on-state forward bias operation. In a method of this invention, the bipolar semiconductor device in which the stacking fault area enlarged and the on-state forward voltage has been increased by on-state forward bias operation, is heated at a temperature of higher than 350° C.Type: GrantFiled: August 4, 2006Date of Patent: June 4, 2013Assignee: Central Research Institute of Electric Power IndustryInventors: Toshiyuki Miyanagi, Hidekazu Tsuchida, Isaho Kamata, Yoshitaka Sugawara, Koji Nakayama, Ryosuke Ishii
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Patent number: 8367510Abstract: In a bipolar silicon carbide semiconductor device in which an electron and a hole recombine with each other during current passage within a silicon carbide epitaxial film grown from a surface of a silicon carbide single crystal substrate, an object described herein is the reduction of defects which are the nuclei of a stacking fault which is expanded by current passage, thereby suppressing the increase of the forward voltage of the bipolar silicon carbide semiconductor device. In a method for producing a bipolar silicon carbide semiconductor device, the device is subjected to a thermal treatment at a temperature of 300° C. or higher in the final step of production. Preferably, the above-mentioned thermal treatment is carried out after the formation of electrodes and then the resulting bipolar silicon carbide semiconductor device is mounted in a package.Type: GrantFiled: September 1, 2006Date of Patent: February 5, 2013Assignee: Central Research Institute of Electric Power IndustryInventors: Toshiyuki Miyanagi, Hidekazu Tsuchida, Isaho Kamata, Masahiro Nagano, Yoshitaka Sugawara, Koji Nakayama, Ryosuke Ishii
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Publication number: 20130009170Abstract: An epitaxial SiC single crystal substrate including a SiC single crystal wafer whose main surface is a c-plane or a surface that inclines a c-plane with an angle of inclination that is more than 0 degree but less than 10 degrees, and SiC epitaxial film that is formed on the main surface of the SiC single crystal wafer, wherein the dislocation array density of threading edge dislocation arrays that are formed in the SiC epitaxial film is 10 arrays/cm2 or less.Type: ApplicationFiled: September 14, 2012Publication date: January 10, 2013Applicants: SHOWA DENKO K.K., CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY, NATIONAL INSTITUTE OF ADVANCE INDUSTRIAL SCIENCE AND TECHNOLOGYInventors: Kenji MOMOSE, Michiya ODAWARA, Keiichi MATSUZAWA, Hajime OKUMURA, Kazutoshi KOJIMA, Yuuki ISHIDA, Hidekazu TSUCHIDA, Isaho KAMATA
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Publication number: 20130004373Abstract: A system for treating a selenium-containing liquid includes a concentration measurement element 15 for measuring the concentration of peroxodisulfuric acid and the concentration of tetravalent selenium in the selenium-containing liquid; a setting element 21 for setting the feed amount of bivalent manganese based on the concentrations of peroxodisulfuric acid and tetravalent selenium, and a reaction rate constant ratio which is the ratio of a reaction rate constant in a reaction between bivalent manganese and peroxodisulfuric acid to a reaction rate constant in a reaction between tetravalent selenium and peroxodisulfuric acid; and an addition element 14 for adding bivalent manganese to the selenium-containing liquid such that the bivalent manganese in the selenium-containing liquid is maintained in the above feed amount. Bivalent manganese is added to the selenium-containing liquid by the addition element, whereby oxidation of tetravalent selenium to hexavalent selenium is suppressed.Type: ApplicationFiled: March 29, 2011Publication date: January 3, 2013Applicant: CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRYInventors: Hiroyuki Akiho, Shigeo Ito, Hiromitsu Matsuda
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Patent number: 8329345Abstract: Combined power generation equipment combining a molten carbonate fuel cell (MCFC) and a gas turbine so as to construct a closed cycle system adapted to recover the total amount of carbon dioxide produced during power generation by feeding fuel and only O2 at an equivalent ratio, thereby obtaining CO2 as an oxidizing agent of a cathode gas, thus achieving high efficiency of a high order, the combined power generation equipment comprising a molten carbonate fuel cell (MCFC) 2 for performing power generation by the electrochemical reaction of an anode gas containing H2 and a cathode gas containing O2, a combustor 3 in which exhaust gas of the MCFC 2 is introduced and combusted, a gas turbine 4 for expanding a combustion gas from the combustor 3, and a circulatory line 15 for mixing CO2 of the exhaust of the gas turbine 4 into the cathode gas.Type: GrantFiled: October 17, 2005Date of Patent: December 11, 2012Assignee: Central Research Institute Of Electric Power IndustryInventors: Eiichi Koda, Fumihiko Yoshiba
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Patent number: 8293623Abstract: An epitaxial SiC single crystal substrate including a SiC single crystal wafer whose main surface is a c-plane or a surface that inclines a c-plane with an angle of inclination that is more than 0 degree but less than 10 degrees, and SiC epitaxial film that is formed on the main surface of the SiC single crystal wafer, wherein the dislocation array density of threading edge dislocation arrays that are formed in the SiC epitaxial film is 10 arrays/cm2 or less.Type: GrantFiled: September 12, 2008Date of Patent: October 23, 2012Assignees: Showa Denko K.K., National Institute of Advanced Industrial Science and Technology, Central Research Institute of Electric Power IndustryInventors: Kenji Momose, Michiya Odawara, Keiichi Matsuzawa, Hajime Okumura, Kazutoshi Kojima, Yuuki Ishida, Hidekazu Tsuchida, Isaho Kamata
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Publication number: 20120261262Abstract: A vessel in which an electroconductive liquid including impurities is stored has an electromagnetic force generation device which produces an electromagnetic force that circulates the electroconductive liquid in the electroconductive liquid, and a discharge device which discharges a non-metallic impurity and a deemed non-metallic impurity and collected in a low-pressure portion based on a pressure difference in the electroconductive liquid produced by the electromagnetic force. The non-metallic impurity and the deemed non-metallic impurity are collected in the low-pressure portion, e.g., a liquid level to be separated by the electromagnetic force.Type: ApplicationFiled: June 1, 2012Publication date: October 18, 2012Applicant: Central Research Institute of Electric Power IndustryInventor: Hideo Araseki