Abstract: Method for producing a multifunctional material includes thermally treating a substrate having a surface layer formed of titanium, titanium oxide, a titanium alloy, or a titanium alloy oxide so that the temperature of the surface layer is raised to 600° C. or higher, to thereby provide, in the interior of the surface layer, a second layer formed of forest microcolumns of titanium oxide or a titanium alloy oxide; and subsequently cutting the second layer in parallel with the surface layer, to yield a material including the substrate and a layer formed of titanium-oxide- or titanium-alloy-oxide-formed forest microcolumns exposed on at least a portion of the substrate, as well as a material including a thin film, numerous continuous small-width with protrusions thereon, and forest microcolumns formed on the protrusions.

Abstract: The multifunctional material can readily adsorb even VOCs, which exhibits high photocatalytic activity and functions as visible-light-responsive photocatalyst by virtue of a large surface area and of being doped with carbon, has high hardness and exhibits excellent exfoliation resistance, wear resistance, resistance to chemicals, and heat resistance. The multifunctional material has a large number of protrusions of titanium oxide or a titanium alloy oxide on at least a portion of a surface of the material for example forest microcolumns of titanium oxide, the layer being exposed on the surface and the microcolumns being doped with carbon.

Abstract: The present invention provides a Bi2223 based thick film that does not peel off when a thermal or a mechanical shock is applied to a base or an oxide superconductor thick film or the like in the middle of a manufacturing process and a method of manufacturing the same. An oxide superconductor paste 1 having a mixing ratio of Bi2212 composition is applied to a base 3, dried, burned, and thereafter burned at a temperature approximate to its melting point to obtain a partially molten layer 4. Next, an oxide superconductor paste 2 having a mixing ratio of Bi2223 composition is applied to the partially molten layer 4, dried, burned, compressed by a CIP, and thereafter repeatedly burned and compressed for a predetermined number of times to obtain the base 3 having a desired superconductor thick film 5 formed thereon.

Abstract: An organic field-effect transistor normally includes: a source electrode and a drain electrode; an organic semiconductor layer in contact with the source electrode and the drain electrode; a gate insulating layer adjacent to the organic semiconductor layer; and a gate electrode in contact with the gate insulating layer. The gate insulating layer according to the present invention is in a liquid state, constituted with a material containing no glue or thickener, a sole or main component of which is an ionic liquid. Thus the capacitance of the ionic liquid corresponding to a gate voltage modulation frequency of 10 Hz is reduced to 1/10 at a frequency of 10 kHz of higher. As a result, an organic field-effect transistor capable of operating at low voltage and assuring ample current gain and high-speed response (the capacitance of the ionic liquid corresponding to a gate voltage modulation frequency of 10 Hz is reduced to 1/10 at a frequency of 10 kHz of higher) is provided.

Abstract: Bipolar semiconductor devices have a Zener voltage controlled very precisely in a wide range of Zener voltages (for example, from 10 to 500 V). A bipolar semiconductor device has a mesa structure and includes a silicon carbide single crystal substrate of a first conductivity type, a silicon carbide conductive layer of a first conductivity type, a highly doped layer of a second conductivity type and a silicon carbide conductive layer of a second conductivity type which substrate and conductive layers are laminated in the order named.

Abstract: Coal is reacted in a furnace 22 to obtain a coal gasification gas. The coal gasification gas is cooled by a gas cooler 23, passed through a porous filter 24, and desulfurized by a desulfurizer 25 to produce a CO-containing gas as an anode. The CO gas-containing gas is subjected to an exothermic reaction in a shift reactor 26 to form H2 and CO2, and the anode gas containing H2 is supplied to an anode 7 of MCFC 2. Thus, in the absence of an extra heat source and a heat exchange source, a desired anode gas is obtained from the coal gasification gas, and with heat buildup of the MCFC 2 being inhibited and its performance being maintained, reduction of CO2 is taken into consideration. A power generating plant equipped with the MCFC 2 capable of using a coal gasification fuel substantially containing a CO gas is thus achieved.

Abstract: To provide an oxide superconductor thick film formation method that can enhance adhesiveness of a Bi2223 thick film to a body to be processed on which the Bi2223 thick film is formed, and increase a cross-sectional area of the Bi2223 thick film, without a decrease in Jc of the Bi2223 thick film. A mixture of a compound oxide having composition Bi2212 and Pb is applied to a surface of the body to be processed, and burned to form a first thick film. An oxide superconductor thick film expressed by a general formula (Bi, Pb)2+aSr2Ca2Cu3OZ (where ?0.1?a?0.5) is formed on the first thick film.

Abstract: In a bipolar silicon carbide semiconductor device in which an electron and a hole recombine with each other during current passage within a silicon carbide epitaxial film grown from a surface of a silicon carbide single crystal substrate, an object described herein is the reduction of defects which are the nuclei of a stacking fault which is expanded by current passage, thereby suppressing the increase of the forward voltage of the bipolar silicon carbide semiconductor device. In a method for producing a bipolar silicon carbide semiconductor device, the device is subjected to a thermal treatment at a temperature of 300° C. or higher in the final step of production. Preferably, the above-mentioned thermal treatment is carried out after the formation of electrodes and then the resulting bipolar silicon carbide semiconductor device is mounted in a package.

Abstract: The present invention provides a mercury removal system and method for effectively removing a mercury component, which is present in a gas stream in an extremely small amount in wet gas cleaning used for coal or heavy oil gasification, petroleum refining and the like. The mercury removal system in wet gas cleaning comprises a water washing tower for introducing therein a target gas containing a mercury component and transferring the mercury component into an absorbing solution, a flush drum (10) for flushing the absorbing solution discharged from the water washing tower to separate the absorbing solution into a gas component and waste water, an oxidation treatment means (1) for adding an oxidizing agent to the absorbing solution at the preceding stage of the flush drum, and a waste water treatment means for subjecting to coagulation sedimentation treatment the separated waste water containing the mercury component at the following stage of the flush drum to dispose of the mercury component as sludge.

Abstract: An object of the present invention is to provide a method for removing gaseous mercury in flue gas that make it possible to remove mercury in flue gas extremely satisfactorily while handling is made easy and cost increases are kept under control. In order to accomplish the object, the present invention adopts the method of removing gaseous mercury in flue gas, in which, after water-insoluble mercury in the flue gas is converted into water-soluble mercury by placing the flue gas in contact with a solid catalyst formed by a metal oxide, wet-type absorption is performed on the water-soluble mercury.

Abstract: An intermediate metal film is formed between a Schottky electrode and a pad electrode. A Schottky barrier height between the intermediate metal film and a silicon carbide epitaxial film is equivalent to or higher than a Schottky barrier height between the Schottky electrode and the silicon carbide epitaxial film. By this configuration, an excess current and a leak current through a pin-hole can be suppressed even in the case in which a Schottky barrier height between the pad electrode and the silicon carbide epitaxial film is less than the Schottky barrier height between the Schottky electrode and the silicon carbide epitaxial film.

Abstract: In a bipolar semiconductor device such that electrons and holes are recombined in a silicon carbide epitaxial film grown from the surface of a silicon carbide single crystal substrate at the time of on-state forward bias operation; an on-state forward voltage increased in a silicon carbide bipolar semiconductor device is recovered by shrinking the stacking fault area enlarged by on-state forward bias operation. In a method of this invention, the bipolar semiconductor device in which the stacking fault area enlarged and the on-state forward voltage has been increased by on-state forward bias operation, is heated at a temperature of higher than 350° C.

Abstract: An object is to provide a gate valve capable of preventing operational deficiencies caused by particulate materials accumulating in a valve box, thus providing superior sealing properties and high durability, having a simple structure, and allowing inspection and maintenance to be performed easily.

Abstract: A method and a system for removing water from high water content solid such as high water content coal, which enables dewatering with small energy consumption. A liquefied material which is a gas at 25° C. under 1 atm. (hereinafter referred to as material D) is contacted with a solid containing water to allow the liquefied material D to dissolve the water contained in the solid, and to produce a liquefied material D having a high water content and simultaneously remove the water from the solid, and by vaporizing the material D in the liquefied material having a high water content, to thereby separate the water from the resulting gaseous material D, recovering the separated gaseous material D, and liquefying the recovered gaseous material by pressurizing, cooling or a combination thereof, to reuse the resulting liquefied material for removing water from a solid containing water.

Abstract: A method for producing a substrate having a carbon-doped titanium oxide layer, which is excellent in durability (high hardness, scratch resistance, wear resistance, chemical resistance, heat resistance) and functions as a visible light responding photocatalyst, is provided. The surface of a substrate, which has at least a surface layer comprising titanium, a titanium alloy, a titanium alloy oxide, or titanium oxide, is heat-treated in a combustion gas atmosphere of a gas consisting essentially of a hydrocarbon, or in a gas atmosphere consisting essentially of a hydrocarbon, such that the surface temperature of the substrate is 900 to 1,500° C.; or a combustion flame of a gas consisting essentially of a hydrocarbon, is directly struck against the surface of the substrate for heat treatment such that the surface temperature of the substrate is 900 to 1,500° C., thereby forming a carbon-doped titanium oxide layer, whereby the substrate having the carbon-doped titanium oxide layer is obtained.

Abstract: A silicon carbide Schottky barrier semiconductor device provided with a Ta electrode as a Schottky electrode, in which the Schottky barrier height is controlled to a desired value in a range where power loss is minimized without increasing the n factor. The method for manufacturing the silicon carbide Schottky barrier semiconductor device includes the steps of depositing Ta on a crystal face of an n-type silicon carbide epitaxial film, the crystal face having an inclined angle in the range of 0° to 10° from a (000-1) C face, and carrying out a thermal treatment at a temperature range of 300 to 1200° C. to form the Schottky electrode.

Abstract: A pressure sensor and a pressure measuring device are provided applicable to a variety of pressure detection targets and capable of measuring a surface pressure. The pressure sensor is configured by laminating a metal layer made of a metal film, an elastic member layer made of a non-metal material, and a coil layer including an exciting coil. Also, as for a sensor sheet on which sensors that each measure point pressure are arranged in an array, variable elements of the elastic member layer and the coil layer are appropriately changed, thereby forming sensors with a single sheet that are different in pressure detection accuracy or pressure detection range for predetermined areas. Also provided is a pressure measuring device that controls exciting timing or frequency of applied voltage of each exciting coil on a sensor sheet.

Abstract: A process for producing a Schottky junction type semiconductor device includes the steps of forming a Schottky electrode on a surface of a silicon carbide epitaxial layer, wherein a Schottky electrode made of molybdenum, tungsten, or an alloy thereof is formed on the surface of the silicon carbide epitaxial layer and is subjected to heat treatment so as to induce an alloying reaction at an interface of the silicon carbide epitaxial layer and the Schottky electrode, thereby forming an alloy layer at the interface, whereby the height of a Schottky barrier is controlled while maintaining an n-factor at a nearly constant low value.

Abstract: It is to provide a process of treating a selenium-containing liquid which can inexpensively treat the selenium-containing liquid. The formation of selenate is inhibited by adding at least one selected from a group consisting of Ti and Mn into the selenium-containing liquid.

Abstract: A flaw detection apparatus includes a coil for producing an alternating-current magnetic field for flowing eddy currents in a magnetic material; a magneto-optical element disposed at the center of an inner peripheral portion of the coil and having a reflective film at an end face thereof opposed to the face of the member to be flaw-detected; an optical fiber for entering light from a light source into the magneto-optical element toward the reflective film via a circulator; an optical fiber for entering reflected light reflected by the reflective film into an analyzer via the circulator; a photoelectric conversion element for converting output light of the analyzer into an electrical signal; and a computing device for processing an output signal of the photoelectric conversion element and detecting a flaw of the member to be flaw-detected, based on the rotation angle of the plane of polarization of the reflected light.