Abstract: The present invention provides a heat-resistance plant gene JAZ5a and use thereof. The inventors of the present invention isolated for the first time a heat resistance gene from the plant of Brassica spp., which can greatly improve the heat-resistance ability of the plant, especially in the bolting stage. The present invention further provides a protein encoded by said gene and its preparation method, vectors and host cells containing said gene, and a method for preparing a transgenic plant containing said gene.

Abstract: A polygulonic acid sulfate or pharmaceutically acceptable salt thereof, preparation method therefor and use thereof in the preparation of tumor growth and/or metastasis inhibitors are disclosed. The polygulonic acid sulfate or pharmaceutically acceptable salt thereof of the present invention can be used in the preparation of any one or more of tumor growth inhibitors, tumor metastasis inhibitors, angiogenesis inhibitors, heparanase inhibitors, C-Met enzyme inhibitors, microtubule polymerization inhibitors, actin-depolymerizing factor activity inhibitors and actin-aggregation inhibitors.

Abstract: A GaN-based power electronic device and a method for manufacturing the same is provided. The GaN-based power electronic device comprising a substrate and an epitaxial layer over the substrate. The epitaxial layer comprises a GaN-based heterostructure layer, a superlattice structure layer and a P-type cap layer. The superlattice structure layer is provided over the heterostructure layer, and the P-type cap layer is provided over the superlattice structure layer. By using this electronic device, gate voltage swing and safe gate voltage range of the GaN-based power electronic device manufactured on the basis of the P-type cap layer technique may be further extended, and dynamic characteristics of the device may be improved. Therefore, application process for the GaN-based power electronic device that is based on the P-type cap layer technique will be promoted.

Abstract: A strong-magnetic focused magnet system with a terahertz source includes a first superconducting main coil and a second superconducting main coil. The second superconducting main coil surrounds the outer surface of the first superconducting main coil, and the second superconducting main coil is coaxial with the first superconducting main coil.

Abstract: A method for producing ethanol and coproducing methanol on a catalyst in a reactor using a co-feed of a synthesis gas and acetate as a reaction raw material comprising passing a raw material gas containing an acetate and a synthesis gas through a reactor loaded with a catalyst to produce ethanol and coproduce methanol under conditions of a reaction temperature of 150-350° C., a reaction pressure of 0.1-20.0 MPa, a reaction volume hourly space velocity of 100-45000 mlg?1h?1, and an acetate weight hourly space velocity of 0.01-5.0 h?1; and the active components of the catalyst are copper and optionally zinc and/or aluminum, which greatly facilitates the conversion of carbon monoxide to methanol, while an extremely high activity of acetate hydrogenation is maintained.

Abstract: A method of manufacturing a semiconductor device, comprising the steps of: forming a gate dielectric layer and a first amorphous channel layer on a substrate; thinning the first amorphous channel layer; etching the first amorphous channel layer and the gate dielectric layer until the substrate is exposed; forming a second amorphous channel layer on the first amorphous channel layer and the substrate; annealing such that the first amorphous channel layer and the second amorphous channel layer are converted into a polycrystalline channel layer; and thinning the polycrystalline channel layer. According to the method of manufacturing semiconductor device of the present invention, the grain size of the polycrystalline thin film is increased by depositing a thick amorphous film and then annealing and thinning it.

Abstract: An ionic conductance measuring instrument comprising a voltage/current test device and a test electrode, in which the test electrode comprises a bulk substrate with four linearly arranged through holes, four Pt wires inserted in the through holes respectively with their upper ends exposed outside of the bulk and their downside ends hidden inside of the bulk; the four axis of the Pt wire is in the same plane and parallel with each other; the gap distance between the mentioned Pt wire and the bulk substrate is 0.1-2 mm, and is filled with ionic conductive polymer.

Abstract: The present invention relates to a wireless network communication technology, and in particular to a time synchronization error compensation method for multi-hop wireless backhaul network based on PTP. Based on PTP, the present invention uses an intermediate node to count the timestamps of transceiving the PTP synchronization message Sync and the delay request message Delay_Req, detect and compensate the local forwarding time of synchronization message Sync and the delay request message Delay_Req and the link delay of transmitting the two between nodes based on the linear regression technology, thereby finally implementing asymmetric delay correction of wireless links between the master and slave nodes and completing time synchronization error compensation.

Abstract: A hierarchical porous material contains primary pore aggregates. The primary pore aggregates combine to form the secondary pore aggregates. The secondary pore aggregates connect to each other formed the hierarchical porous material. There are primary pores on the primary pore aggregates wherein the diameter of primary pore is 5-500 nm. There are secondary pores on the secondary pore aggregates wherein the diameter of secondary pore is 1-5 ?m. The hierarchical porous material is used as oxygen reduction reaction (ORR) catalysts or photocatalysts having a significantly improved catalytic activity.

Abstract: The present invention provides a system and method for preparing high-purity vanadium pentoxide powder. Industrial grade vanadium pentoxide is converted to vanadium oxytrichloride by low temperature fluidizing chlorination, wherein chlorinating gas is preheated via heat exchange between fluidizing gas and chlorination flue gas, and an appropriate amount of air is added to enable a part of carbon powder to combust so as to achieve a balanced heat supply during the chlorination, thereby increasing the efficiency of chlorination and ensuring good selectivity in low temperature chlorination. The vanadium oxytrichloride is subjected to purification by rectification, ammonium salt precipitation and fluidized calcination, thereby obtaining high-purity vanadium pentoxide, wherein the ammonia gas produced during calcination is condensed and then recycled for ammonium salt precipitation.

Abstract: Provided are P type MOSFETs and methods for manufacturing the same. The method may include forming source/drain regions in a semiconductor substrate; forming an interfacial oxide layer on the semiconductor substrate; forming a high K gate dielectric layer on the interfacial oxide layer; forming a first metal gate layer on the high K gate dielectric layer; implanting dopants into the first metal gate layer through conformal doping; and performing annealing to change an effective work function of a gate stack including the first metal gate layer, the high K gate dielectric, and the interfacial oxide layer.

Abstract: The present invention relates to a catalyst for ammonia synthesis and ammonia decomposition. The catalyst includes a nitrogen-containing compound of a main group element and a related support and an additive. The present invention is a novel catalytic material, which exhibits good catalytic activity in ammonia synthesis and ammonia decomposition reactions.

Abstract: The present invention relates to a modified lithium ion battery anode material having high energy density, and a manufacturing process thereof, the anode material comprising, from inside to outside, a core, a transition layer and a shell layer. The anode material of the present invention has the advantages of high energy density, low surface activity, good storage performance, and a simple manufacturing process, and is suitable for large scale application.

Abstract: The present invention relates to a technical field of 3D printing, and more particularly to a 3D printer spray nozzle structure and a method thereof for controlling speed and precision. According to the present invention, a feeding pipeline is embedded in an external shell, the feeding pipeline and an extruder are coaxially connected; the extruder is driven by a driving device, so as to rotate relative to the feeding pipeline. A rotation angle of the extruder relative to the feeding pipeline is controlled by rotation of a motor, for controlling a filament area actually sprayed by the extrude, in such a manner that printing speed and precision is controlled for suiting different requirements of different printing area. The present invention controls the printing speed and precision, for improving overall printing speed with precision requirements satisfied, and is applicable to 3D printer spray nozzle structure and controlling.

Abstract: Disclosed are a method for sending and receiving emails using international multilingual mailbox. The method includes: 1) setting a field 1 in a header of an email in an international multilingual mailbox, and recording a substitute English email address corresponding to the international multilingual mailbox; setting a field 2 in the header to describe the email's sender's email address in English; 2) before a sending an email generated by a terminal that supports international multilingual mailbox, checking whether the receiving terminal of the email supports international multilingual mailbox; if not, sending the email according to the English email address in the field 1; and if yes, directly sending the email; and 3) extracting the field 2 from the header of the email by the receiving terminal, determining the corresponding language, and sending a prompt in English or the predetermined language to the email recipient.

Abstract: A semiconductor device with a high-quality epitaxial layer and a method of manufacturing the same. The semiconductor device may include: a substrate; a fin-shaped first semiconductor layer spaced apart from the substrate; a second semiconductor layer at least partially surrounding a periphery of the first semiconductor layer; an isolation layer formed on the substrate, exposing at least a part of the second semiconductor layer, wherein the exposed part of the second semiconductor layer extends in a fin shape; and a gate stack formed on the isolation layer and intersecting the second semiconductor layer.

Abstract: Disclosed is a method for preparing a double end capped glycol ether, the method comprising: introducing into a reactor a raw material comprising a glycol monoether and a monohydric alcohol ether, and enabling the raw material to contact and react with an acidic molecular sieve catalyst to generate a double end capped glycol ether, a reaction temperature being 50-300° C., a reaction pressure being 0.1-15 MPa, a WHSV of the glycol monoether in the raw material being 0.01-15.0 h?1 , and a mole ratio of the monohydric alcohol ether to the glycol monoether in the raw material being 1-100:1. The method of the present invention enables a long single-pass lifespan of the catalyst and repeated regeneration, has a high yield and selectivity of a target product, low energy consumption during separation of the product, a high economic value of a by-product, and is flexible in production scale and application.

Abstract: A calibration method for an absolute responsivity of a terahertz quantum well detector and a calibration device thereof, in which the device at least comprises: a driving power supply, a single frequency laser source, an optic, a terahertz array detector, a terahertz dynamometer, a current amplifier and an oscilloscope. The calibration method adopts a power detectable single frequency laser source as a calibration photosource, to obtain the absolute responsivity parameters of the detector at the laser frequency; a normalized photocurrent spectrum of the detector is used to further calculate the absolute responsivity parameters of the detector at any detectable frequency. the single frequency laser source with periodically output is adopted as a calibration photosource, the terahertz array detector and the dynamometer are adopted to directly measure and obtain the incident power of the calibrated detector.

Abstract: The present invention provides a graphene coating-modified electrode plate for lithium secondary battery, characterized in that, the electrode plate comprises a current collector foil, graphene layers coated on both surfaces of the current collector foil, and electrode active material layers coated on the graphene layers. A graphene coating-modified electrode plate for lithium secondary battery according to the present invention comprises a current collector foil, graphene layers coated on both surfaces of the current collector foil, and electrode active material layers coated on the graphene layers. The graphene-modified electrode plate for lithium secondary battery thus obtained increases the electrical conductivity and dissipation functions of the electrode plate due to the better electrical conductivity and thermal conductivity of graphene. The present invention further provides a method for producing a graphene coating-modified electrode plate for lithium secondary battery.

Abstract: The present invention provides oxalic amide ligands and uses thereof in copper-catalyzed coupling reaction of aryl halides. Specifically, the present invention provides a use of a compound represented by formula I, wherein definitions of each group are described in the specification. The compound represented by formula I can be used as a ligand in copper-catalyzed coupling reaction of aryl halides for the formation of C—N, C—O and C—S bonds.