Patents Assigned to Chung-Shan Institute of Science
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Publication number: 20240234561Abstract: A high electron mobility transistor includes a growth substrate, a lattice matching layer, an back-barrier layer, an electron blocking layer, a channel layer, an active layer, a source, a gate, and a drain. The lattice matching layer and the back-barrier layer are formed on the growth substrate. The back-barrier layer includes GaN doped with C. The electron blocking layer is formed on the back-barrier layer. The electron blocking layer includes AlGaN, wherein the doping percent of Al atoms of the AlGaN is 3˜5% and the doping percent of Ga atoms of the AlGaN is 95˜97%. The electron blocking layer has a thickness of 2˜5 nm. The channel layer and the active layer are formed on the electron blocking layer. The source, the gate, and the drain are formed on the active layer.Type: ApplicationFiled: January 13, 2023Publication date: July 11, 2024Applicants: National Yang Ming Chiao Tung University, National Chung-Shan Institute of Science and TechnologyInventors: Edward Yi CHANG, You-Chen WENG, Min-Lu KAO
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Publication number: 20240234538Abstract: A high electron mobility transistor and a method for fabricating the same is disclosed. Firstly, a lattice matching layer, a channel layer, and an AlGaN layer are sequentially formed on a growth substrate. The AlGaN layer includes a first area, a second area, and a third area, wherein the second area is located between the first area and the third area. Then, an insulation block is formed on the second area of the AlGaN layer and two GaN blocks are respectively formed on the first area and the third area of the AlGaN layer. Two InAlGaN blocks are respectively formed on the GaN blocks and the insulation block is removed. Finally, a gate is formed to interfere the second area of the AlGaN layer and a source and a drain are respectively formed on the InAlGaN blocks.Type: ApplicationFiled: January 13, 2023Publication date: July 11, 2024Applicants: National Yang Ming Chiao Tung University, National Chung-Shan Institute of Science and TechnologyInventors: Edward Yi CHANG, You-Chen WENG, Min-Lu Kao
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Publication number: 20240136422Abstract: A high electron mobility transistor and a method for fabricating the same is disclosed. Firstly, a lattice matching layer, a channel layer, and an AlGaN layer are sequentially formed on a growth substrate. The AlGaN layer includes a first area, a second area, and a third area, wherein the second area is located between the first area and the third area. Then, an insulation block is formed on the second area of the AlGaN layer and two GaN blocks are respectively formed on the first area and the third area of the AlGaN layer. Two InAlGaN blocks are respectively formed on the GaN blocks and the insulation block is removed. Finally, a gate is formed to interfere the second area of the AlGaN layer and a source and a drain are respectively formed on the InAlGaN blocks.Type: ApplicationFiled: January 13, 2023Publication date: April 25, 2024Applicants: National Yang Ming Chiao Tung University, National Chung-Shan Institute of Science and TechnologyInventors: Edward Yi CHANG, You-Chen WENG, Min-Lu Kao
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Publication number: 20240136432Abstract: A high electron mobility transistor includes a growth substrate, a lattice matching layer, an back-barrier layer, an electron blocking layer, a channel layer, an active layer, a source, a gate, and a drain. The lattice matching layer and the back-barrier layer are formed on the growth substrate. The back-barrier layer includes GaN doped with C. The electron blocking layer is formed on the back-barrier layer. The electron blocking layer includes AlGaN, wherein the doping percent of Al atoms of the AlGaN is 3˜5% and the doping percent of Ga atoms of the AlGaN is 95˜97%. The electron blocking layer has a thickness of 2˜5 nm. The channel layer and the active layer are formed on the electron blocking layer. The source, the gate, and the drain are formed on the active layer.Type: ApplicationFiled: January 13, 2023Publication date: April 25, 2024Applicants: National Yang Ming Chiao Tung University, National Chung-Shan Institute of Science and TechnologyInventors: Edward Yi CHANG, You-Chen WENG, Min-Lu KAO
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Patent number: 11643367Abstract: A composite material fabrication method includes stacking a plurality of fiber layers and a first binder and curing the first binder to form a three-dimensional structure with a plurality of mesh openings, and filling the plurality of mesh openings with a plurality of fiber filaments of a fiber array and a second binder and curing the second binder. A plurality of first mesh openings of the plurality of mesh openings are connected in a first direction.Type: GrantFiled: October 8, 2019Date of Patent: May 9, 2023Assignee: National Chung-Shan Institute of Science and TechnologyInventors: Mau-Yi Huang, Hao-Chung Hsiao
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Patent number: 11633824Abstract: The present invention discloses a grinding cavity body of multiple vibration sources, in which a plurality of ultrasonic vibration sources are disposed, capable of controlling the multi-directional macroscopic medium flow, making benefits to the vibration medium (the abrasive of the slurry) to enter the fine structure of the workpiece to be processed, and to the abrasive to vibrate itself slightly to enhance the performance of abrasive to the workpiece which needs to be ground.Type: GrantFiled: December 18, 2019Date of Patent: April 25, 2023Assignee: National Chung-Shan Institute of Science and TechnologyInventors: Po-Shen Lin, Ming-Wei Liu, Chih-Peng Chen, Kuo-Kuang Jen
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Patent number: 11628539Abstract: The present invention discloses a multi-dimensional vibration grinding cavity body. By adjusting amplitudes (power) and frequencies of the multi-dimensional ultrasonic vibration source, such that the multi-directional macroscopic flow is formed in the cavity body while keeping the vibration medium to have the original characteristics to improve the performance of grinding of slurry.Type: GrantFiled: December 18, 2019Date of Patent: April 18, 2023Assignee: National Chung-Shan Institute of Science and TechnologyInventors: Po-Shen Lin, Ming-Wei Liu, Chih-Peng Chen, Kuo-Kuang Jen
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Patent number: 11488069Abstract: A method for predicting air quality with the aid of machine learning models includes: (A) providing air pollution data to perform an eXtreme Gradient Boosting (XGBoost) regression algorithm for obtaining a XGBoost prediction value; (B) providing the air pollution data to perform a Long Short-Term Memory (LSTM) algorithm for obtaining an LSTM prediction value; (C) combining the air pollution data, the XGBoost prediction value and the LSTM prediction value to generate air pollution combination data; (D) performing an XGBoost classification algorithm to obtain a suggestion for whether to issue an air pollution alert; and (E) performing the XGBoost regression algorithm on the air pollution combination data to obtain an air pollution prediction value. Two layers of machine learning models are built, and a situation where prediction results are too conservative when a single model does not have enough data can be improved.Type: GrantFiled: November 4, 2018Date of Patent: November 1, 2022Assignee: National Chung-Shan Institute of Science and TechnologyInventors: Li-Yen Kuo, Chih-Lun Liao, Chun-Han Tai, Hao-Yu Kao
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Patent number: 11485331Abstract: A surface adaptation method suitable for a vehicle includes evaluating a plurality of longitudinal forces with respect to a plurality of sampling points, evaluating a plurality of wheel slips with respect to the plurality of sampling points, determining a maximum longitudinal force from the plurality of longitudinal forces, and determining a wheel slip threshold from the plurality of wheel slips. The wheel slip threshold corresponds to the maximum longitudinal force.Type: GrantFiled: October 13, 2019Date of Patent: November 1, 2022Assignee: National Chung-Shan Institute of Science and TechnologyInventors: Ming-Kai Gan, Bo-Chiuan Chen, Shih-Che Chien, Chien-Hao Hsiao, Yu-Sung Hsiao, Feng-Chia Chang
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Patent number: 11465905Abstract: A chemical synthesis method to fabricate boron carbide to obtain boron carbide fine powders includes the steps of: (A) formulating a precursor solution including a boron source, a liquid organic carbon source and a catalyst; (B) subjecting the precursor solution to a pyrolytic reaction in the presence of electromagnetic radiation to obtain a boron carbide precursor; and (C) subjecting the boron carbide precursor to a thermal energy treatment in the presence of thermal energy to obtain boron carbide fine powders.Type: GrantFiled: October 21, 2019Date of Patent: October 11, 2022Assignee: National Chung-Shan Institute of Science and TechnologyInventors: Wei-Ting Hsu, Yen-Chung Chen, Hui-Chun Wang, Ker-Jer Huang
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Patent number: 11442427Abstract: The present invention provides a planar three-dimensional displacement sensor for a multiaxis machining device. With the measurement of the (planar) three-dimensional displacement sensor in the multiaxis machining device, the multiaxis machining device and a multiaxis machining compensation method are able to eliminate various deformation effects effectively.Type: GrantFiled: December 25, 2019Date of Patent: September 13, 2022Assignee: National Chung-Shan Institute of Science and TechnologyInventors: Yi-Yuh Hwang, Li-Chung Liu
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Patent number: 11372080Abstract: A continuous wave radar system comprises a substrate, a transmitter disposed on the substrate, a receiver disposed on the substrate, and an isolating device comprising a plurality of metal plates parallelly disposed on the substrate between the transmitter and the receiver for isolating leakage signal transmitted from the transmitter to the receiver. The metal plates are grounded with the transmitter and the receiver via electrical connection between the metal plates and the substrate. The metal plates are so arranged that an eddy current induced in each of the metal plates is directed away by grounding when the leakage signal passes through the metal plates.Type: GrantFiled: November 25, 2019Date of Patent: June 28, 2022Assignee: National Chung-Shan Institute of Science and TechnologyInventors: Shih-Che Tsai, Jer-Long Chen, Min-Ching Lin, Ruei-Shen Wang, You-Heng Wei
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Patent number: 11335964Abstract: A cold plate for a battery module comprising a plurality of cells that produces heat as charging and discharging is disclosed. The cold plate includes a plurality of first fins distributed in a first subarea of the cold plate; and a plurality of second fins distributed in a second subarea of the cold plate; wherein a second fin coverage of the plurality of second fins distributed in the second subarea is smaller than a first fin coverage of the plurality of first fins distributed in the first subarea when an amount of heat absorption of the second subarea from the plurality of cells is greater than an amount of heat absorption of the first subarea from the plurality of cells.Type: GrantFiled: December 4, 2019Date of Patent: May 17, 2022Assignee: National Chung-Shan Institute of Science and TechnologyInventors: Fu-Min Fang, Kuo-Kuang Jen, Gwo-Huei You, Kuo-An Liang
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Patent number: 11333711Abstract: The present invention discloses a method for rapidly estimating for a remaining capacity of a battery, comprising performing a constant current charge to the battery in a first period, instantly capturing a voltage/temperature of the battery in a frequency, and generating a voltage-time graph; after leaving the battery along for a second period, instantly capturing the voltage/temperature of the battery in the frequency; calculating a voltage rising rate during the first period; calculating a voltage drop rate during a leaving-along period; calculating a critical sample time; applying the critical sample time, and comparing the voltage-time graph measured in the first period, to obtain a critical sampling voltage; calculating a voltage difference slope; calculating a charging time, which is consumed by charging the battery from a lower-bound voltage to an upper-bound voltage with the constant current; calculating a compensation ratio value; and calculating the remaining capacity of the battery.Type: GrantFiled: January 19, 2020Date of Patent: May 17, 2022Assignee: National Chung-Shan Institute of Science and TechnologyInventors: Wen-Chen Lih, Tsung-Yu Tsai, Shih-Chang Tseng
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Patent number: 11295160Abstract: An image adaptive feature extraction method includes dividing an image into a plurality of blocks, performing a feature extraction processing on the plurality of blocks, and obtaining a block feature from each of the plurality of blocks after the feature extraction processing; calculating each block feature by means of a support vector machine (SVM) classifier, wherein each block feature is calculated to obtain a hyperplane normal vector; setting a threshold value, determining the block feature according to the hyperplane normal vector, recording the block as an adaptive feature block when a value of the hyperplane normal vector is higher than the threshold value, and integrating each adaptive feature block to form an adaptive feature image. Because an image adaptive feature extraction process is performed before a pedestrian image detection is calculated, and effective feature data is then selected, computational efficiency is boosted and detection pedestrian error probability is reduced.Type: GrantFiled: November 7, 2019Date of Patent: April 5, 2022Assignee: National Chung-Shan Institute of Science and TechnologyInventors: Shih-Shinh Huang, Shih-Che Chien, Feng-Chia Chang, Yu-Sung Hsiao, Chien-Hao Hsiao
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Patent number: 11290222Abstract: A method of sidelink communications by a plurality of user equipment (UE) without the control of a base station in a wireless communication system is disclosed. In one embodiment, the UE being a scheduler end is configured to allocate the resources for initial/repeated transmissions and ACK/NACK messages, and also transmit information regarding the allocated resources to both the UEs being a transmitter end and a receiver end. In one embodiment, retransmission is performed when none of the scheduler and transmitter ends has received the ACK message sent by the receiver end, so as to minimize redundant retransmission in consideration of transmission reliability. In one embodiment, retransmission is performed when at least one of the scheduler and transmitters end has received the NACK message sent by the receiver end before the retransmission timer has reached to zero, so as to minimize transmission latency.Type: GrantFiled: March 9, 2020Date of Patent: March 29, 2022Assignee: National Chung-Shan Institute of Science and TechnologyInventors: Jhih-Lin Li, Shao-Yu Lien, Chia-Ling Wu, Yueh-Jir Wang
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Patent number: 11254043Abstract: The present invention aims at providing a high-accuracy contactless measurement method for measuring the temperature of a metal thermoforming mold, which is capable of timely monitoring the metal temperature in multiple areas and also has threshold warning functionalities for delivering real-time notifications, in order to save the labor costs for long-term monitoring.Type: GrantFiled: December 23, 2018Date of Patent: February 22, 2022Assignee: National Chung-Shan Institute of Science and TechnologyInventors: Shiang-Feng Tang, Shun-Lung Yen, Kun-Chi Lo, Wen-Jen Lin
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Patent number: 11169212Abstract: The present invention discloses an external battery short-circuit testing device, configured to perform short-circuit test on a battery pack under test. The external battery short-circuit testing device comprises a plurality of fuses; a Hall current transducer, coupled to the plurality of fuses; a current meter, coupled to the Hall current transducer and the battery pack under test; a voltmeter, coupled to the battery pack under test; a variable resistor, coupled to the Hall current transducer; an electromagnetic switch, coupled to the variable resistor and the battery pack under test; and an operation unit, comprising a voltage measurement unit, a current measurement unit, a temperature measurement unit and a switch control unit.Type: GrantFiled: January 15, 2020Date of Patent: November 9, 2021Assignee: National Chung-Shan Institute of Science and TechnologyInventors: Wei-Min Hsiao, Shih-Chang Tseng, Kuo-Kuang Jen, Gwo-Huei You, Chih-Hsien Chung
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Patent number: 11161795Abstract: The present invention provides a method for the preparation of an insensitive high enthalpy explosive Dihydroxylammonium 5,5?-bistetrazole-1,1?-diolate (TKX-50) in the presence of N,N-dimethylformamide, N,N-dimethylacetamide, or N-Methyl-2-pyrrolidone as a solvent via a four-step, one-pot reaction route to obtain a final product after four reaction steps. The more dangerous intermediate diazidoglyoxime may be solved by the one-pot method without the need of isolation. Further, the cyclization reaction is carried out in the presence of dropwisely added concentrated sulfuric acid to replace hydrochloric gas so no hydrochloric gas generator is needed to greatly reduce the amount of waste acid so as to effectively reduce the cost by avoiding using hydrochloric gas steel cylinders which require much safety equipment.Type: GrantFiled: November 21, 2018Date of Patent: November 2, 2021Assignee: National Chung-Shan Institute of Science and TechnologyInventors: Chan-Yuan Ho, Tsair-Feng Lin, Yan-Lin Wang
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Patent number: 11130152Abstract: A method for the formation of tantalum carbides on a graphite substrate includes the steps of: (a) adding an organic tantalum compound, a chelating agent, a pre-polymer to an organic solvent to form a tantalum polymeric solution; (b) subjecting a graphite substrate with the tantalum polymeric solution to a curing process to form a polymeric tantalum film on the graphite substrate; and (c) subjecting the polymeric tantalum film on the graphite substrate in an oven to a pyrolytic reaction in the presence of a protective gas to obtain a protective tantalum carbide on the graphite substrate.Type: GrantFiled: November 28, 2019Date of Patent: September 28, 2021Assignee: National Chung-Shan Institute of Science and TechnologyInventors: Cheng-Jung Ko, Jun-Bin Huang, Chih-Wei Kuo, Dai-Liang Ma, Bang-Ying Yu