Patents Assigned to Chung-Shan Institute of Science
  • Patent number: 11125625
    Abstract: A microbolometer read-out circuit includes an extraction circuit configured to detect a voltage signal of a temperature variation; an analog-to-digital converter coupled to the extraction circuit and configured to digitalize the voltage signal of the temperature variation; an image processing circuit coupled to the analog-to-digital converter; and wherein the image processing circuit is coupled to a gain digital-to-analog converter and an offset digital-to-analog converter.
    Type: Grant
    Filed: December 24, 2018
    Date of Patent: September 21, 2021
    Assignee: National Chung-Shan Institute of Science and Technology
    Inventors: Ping-Kuo Weng, Yin-Yi Wu, Shiang-Feng Tang, Wen-Jen Lin, Yau-Tang Gau
  • Patent number: 11072871
    Abstract: A preparation apparatus for uniform silicon carbide crystals comprises a circular cylinder, a doping tablet, and a plate to stabilize and control the supply of dopants. The accessory does not participate in the reaction in the growth chamber but maintains its efficacy during growth. Finally, a single semi-insulating silicon carbide crystal with uniform electrical characteristics can be obtained.
    Type: Grant
    Filed: December 20, 2019
    Date of Patent: July 27, 2021
    Assignee: National Chung-Shan Institute of Science and Technology
    Inventors: Chih-Wei Kuo, Dai-Liang Ma, Chia-Hung Tai, Bang-Ying Yu, Cheng-Jung Ko, Bo-Cheng Lin, Hsueh-I Chen
  • Patent number: 11065814
    Abstract: The present application provides not only a heating device for additive manufacturing but also a heating module and a manufacturing apparatus utilizing the heating device. The heating device utilizes a rotational reflective cover to modulate a heating direction of a heating source, which expands an area correspondingly irradiated by the heating source and enhances uniformity of heating. Besides, the heating modules can be coupled and controlled by a controlling subsystem so as to respectively irradiate different areas with ranges at least partially intersecting each other, which also improves heating uniformity for heating a large area.
    Type: Grant
    Filed: October 24, 2018
    Date of Patent: July 20, 2021
    Assignee: National Chung-Shan Institute of Science and Technology
    Inventors: Chung-Chun Huang, Chih-Peng Chen, Po-Shen Lin
  • Patent number: 11056796
    Abstract: The present invention provides a switching component of a directly flat-attached active frequency selective surface (AFSS) and fabricating method thereof. The present invention utilizes P-type and N-type thin film materials to fabricate a PN diode switching component capable of adjusting a resonance frequency of the AFSS, such that the AFSS together with the switching component could be integrally fabricated into a single thin film. Therefore, by utilizing a stepwise coating method to fabricate each layer with corresponding material, an equivalent length of a metal pattern could be adjusted, thereby changing the resonance frequency of the AFSS.
    Type: Grant
    Filed: December 5, 2019
    Date of Patent: July 6, 2021
    Assignee: National Chung-Shan Institute of Science and Technology
    Inventors: Jian-Long Ruan, Shyh-Jer Huang, Yang-Kuo Kuo
  • Patent number: 11049993
    Abstract: The present invention adopts an aluminum nitride substrate with great heat dissipation, great thermal conductivity, high electrical insulation, long service life, corrosion resistance, high temperature resistance, and stable physical characteristics. A high-quality zinc oxide film with a wide energy gap is fabricated on the aluminum nitride substrate by magnetron radio frequency (RF) sputtering. Compared with general vapor deposition, chemical vapor deposition and hydrothermal, the magnetron RF sputtering grows the high-quality zinc oxide film with few defects. The zinc oxide film with few defects concentration is an important key technology for short-wavelength optoelectronic devices, which decrease leakage currents of the optoelectronic devices, reduces flicker noise, and further improves its UV-visible rejection ratio.
    Type: Grant
    Filed: December 26, 2019
    Date of Patent: June 29, 2021
    Assignee: National Chung-Shan Institute of Science and Technology
    Inventors: Yung-Han Huang, Chung-Yen Lu, Jian-Long Ruan
  • Patent number: 11049717
    Abstract: A method for fabricating an ultra-thin graphite film on a silicon carbide substrate includes the steps of: (A) providing a polyamic acid solution and a siloxane-containing coupling agent for polymerizing under an inert gas atmosphere to form a siloxane-coupling-group-containing polyamic acid solution; (B) performing a curing process after applying the siloxane-coupling-group-containing polyamic acid solution to a silicon carbide substrate; (C) placing the silicon carbide substrate in a graphite crucible before placing the graphite crucible in a reaction furnace to perform a carbonization process under an inert gas atmosphere; (D) subjecting the silicon carbide substrate to a graphitization process to obtain a graphite film, thereby make it possible to fabricate an ultra-thin graphite film of high-quality on the surface of silicon carbide in a lower graphitization temperature range.
    Type: Grant
    Filed: December 21, 2018
    Date of Patent: June 29, 2021
    Assignee: National Chung-Shan Institute of Science and Technology
    Inventors: Dai-Liang Ma, Cheng-Jung Ko, Chia-Hung Tai, Jun-Bin Huang, Bang-Ying Yu
  • Patent number: 10992348
    Abstract: An electronic bolt using wireless communication is disclosed and includes a bolt coil formed on a surface of the bolt circuit board, and configured to receive a wireless energy from an electronic seal; and a chip electrically connected to the bolt coil, and configure to generate a wireless signal containing a unique identification to the bolt coil when the chip is driven by the wireless energy; a holder configured to fix and support the bolt circuit board; and a bolt housing configured to contain the bolt circuit board and the holder; wherein the electronic bolt is locked or unlocked with the electronic seal when the unique identification is confirmed by the electronic seal.
    Type: Grant
    Filed: December 30, 2019
    Date of Patent: April 27, 2021
    Assignee: National Chung-Shan Institute of Science and Technology
    Inventors: Feng-Yu Chang, Yu-Cheng Chang, Po-Chang Chen
  • Patent number: 10969280
    Abstract: A temperature measurement correction method for a temperature detection device is provided. The temperature detection device includes a case and a focal plane array module disposed on an inner of the case. The temperature measurement correction method includes measuring an ambient temperature, a temperature of the case and a temperature of the focal plane array module, determining a plurality of radiometric regression coefficients according to the ambient temperature, the temperature of the case and the temperature of the focal plane array module, utilizing the temperature detection device to sense infrared energy radiated from an object to generate an electrical signal, and calculating an actual temperature value of the object according to the plurality of radiometric regression coefficients and the electrical signal.
    Type: Grant
    Filed: September 6, 2018
    Date of Patent: April 6, 2021
    Assignee: National Chung-Shan Institute of Science and Technology
    Inventors: Shiang-Feng Tang, Shun-Lung Yen, Kun-Chi Lo, Wen-Jen Lin
  • Patent number: 10971936
    Abstract: A renewable energy generation and storage system forms a current control loop for controlling a current charge operation and a current discharge operation to a plurality of energy storage cells at the same time. As a result, renewable energy from multiple sources may be stored while providing output voltage to a load, and therefore the renewable energy generation and storage system of the present invention may achieve energy generation and storage at the same time.
    Type: Grant
    Filed: December 11, 2018
    Date of Patent: April 6, 2021
    Assignee: National Chung-Shan Institute of Science and Technology
    Inventors: Chi-Sheng Wu, Gwo-Huei You, Jin-Kuan Chang
  • Patent number: 10967756
    Abstract: A liquid cooling module comprises a cooling plate, including a plurality of cooling channels for liquid flowing, and a pump block, integrated with the cooling plate and including a pump and a heat exchange chamber connecting to the plurality of cooling channels of the cooling plate, to form a circulation loop.
    Type: Grant
    Filed: December 20, 2018
    Date of Patent: April 6, 2021
    Assignee: National Chung-Shan Institute of Science and Technology
    Inventors: Fu-Min Fang, Kuo-Kuang Jen, Gwo-Huei You
  • Patent number: 10930441
    Abstract: In this patent, a high energy and power density supercapacitor was invented. A coin cell with supercapacitor includes a spring lamination, a working electrode, a counter electrode, a separator, and an Organic electrolyte. The working and counter electrodes were Activated carbon/N-doping porous graphene/binder coated on Aluminum substrate. The separator was from Nippon Kodoshi Corporation. The Organic electrolyte was 1M TEABF4/PC. The method of producing N-doping porous graphene included the following steps: Step 1: Graphite oxide (GO) was transferred into the furnace. Step 2: Inject 50 c.c./min gas flow of Nitrous oxides for one hour. Step 3: Intensify 40 Celsius degrees/min to 900 Celsius degrees and after holding for one hour, lower the temperature naturally to the room temperature, it can be prepared into N-doping porous graphene. In this patent, the capacitance of the supercapacitor is 122 F/g and the power density is 31 kW/Kg.
    Type: Grant
    Filed: February 25, 2019
    Date of Patent: February 23, 2021
    Assignee: National Chung-Shan Institute of Science and Technology
    Inventors: Chien-Liang Chang, Wu-Ching Hung, Jeng-Kuei Chang, Bo-Rui Pan
  • Patent number: 10920989
    Abstract: A kiln includes a stove, a combustion device, and an exhaust pipe, wherein the stove includes a cavity, an entry, and an air outlet. The cavity includes a front section and a rear section, and a top wall surface of the front section is tilt. The air outlet is disposed between a top of the front section of the cavity and the entry. The combustion device is disposed in the rear section. The combustion device includes at least one burner, a supporting assembly, and an infrared ray generation assembly. The supporting assembly includes a cover plate having a hollow portion. The infrared ray generation assembly is mounted to the supporting assembly and located above the cover plate. The infrared ray generation assembly could be heated by the flames of the burner to generate infrared ray which passes through the hollow portion. The exhaust pipe communicates with the air outlet.
    Type: Grant
    Filed: September 4, 2018
    Date of Patent: February 16, 2021
    Assignees: National Chung-Shan Institute of Science & Technology, Ten Wing Scientific Co., Ltd.
    Inventors: Hsi-Ming Tseng, Li-Chih Liao
  • Patent number: 10923621
    Abstract: The present invention uses a photolithography process and an electroplating process to perform. TAV copper filling and patterning of the fabrication of the double side copper-plated layers to plate the double side copper-plated layers in advance at the TAV through holes to serve as a stress buffer layer of the aluminum nitride substrates. Then the subsequent pattern designs of the copper-plated layers are customized. According to the simulation theory calculations, it is proved that the stress which accumulates on the short-side of the copper-plated layer of the aluminum nitride substrate with the asymmetric structure may be effectively reduced to facilitate the improvement of the reliability of the aluminum nitride substrate.
    Type: Grant
    Filed: October 25, 2019
    Date of Patent: February 16, 2021
    Assignee: National Chung-Shan Institute of Science and Technology
    Inventors: Chun-Te Wu, Yang-Kuo Kuo, Cheng-Hung Shih, Hong-Ting Huang
  • Patent number: 10913188
    Abstract: The present invention provides an anti-shock pad, which includes: a board-shaped compound material structure, manufactured by mixing a composition and foam molding the composition, wherein the composition comprises: a main substrate, having a proportion of 50 wt % to 80 wt % of total weight of the composition, comprising: a vinyl acetate; and an ethylene-vinyl acetate; a secondary substrate, having a proportion of 10 wt % to 40 wt % of the total weight of the composition, comprising: a polyethylene; a styrene butadiene rubber; and a thermoplastic elastomer; and an additive, having a proportion of 1 wt % to 20 wt % of the total weight of the composition; wherein a density of the anti-shock pad is between 0.20 and 0.50, and a foaming ratio of the anti-shock pad is between 20 and 40. The present invention is also related to a method of manufacturing the anti-shock pad.
    Type: Grant
    Filed: April 9, 2019
    Date of Patent: February 9, 2021
    Assignee: National Chung-Shan Institute of Science and Technology
    Inventors: Chun-Wei Chiu, Teh-Long Lai, Shyh-Chi Wu
  • Patent number: 10903674
    Abstract: A power conversion system comprises a plurality of power converter modules, each including a bi-directional DC to DC converter and a current controller, wherein the bi-directional DC to DC converter is connected to the current controller, for charging or discharging a DC power source according to a distribution command received from the current controller, and a voltage controller, connecting to the plurality of power converter modules, for generating a current command to the current controller, wherein the voltage controller generates a current command to the current controller of the power converter module according to the detected capacity and voltage of the DC power source, whereby the current controller generates the distribution command to the bi-directional DC to DC converter with the received current command.
    Type: Grant
    Filed: December 17, 2018
    Date of Patent: January 26, 2021
    Assignee: National Chung-Shan Institute of Science and Technology
    Inventors: Shu-Hsien Wen, Chih-Hsien Chung, Jin-Kuan Chang
  • Patent number: 10900664
    Abstract: A fuel gas nozzle used in a microturbine includes a first chamber, a second chamber connected to the first chamber, a pilot fuel gas pipe, a main fuel gas pipe and an intake pipe. An intake zone and a mixing zone are respectively formed in the first chamber and the second chamber and are communicated with each other. The pilot fuel gas pipe is for introducing a first fuel gas into a downstream of the second chamber. The main fuel gas pipe is for introducing a second fuel gas into the mixing zone via the intake zone. The intake pipe is for introducing an air into the mixing zone. A centerline of the intake pipe is not intersected with a centerline of the second chamber, so as to induce a vortex flow field of the air flowing into the mixing zone for mixing the air and the second fuel gas.
    Type: Grant
    Filed: December 21, 2018
    Date of Patent: January 26, 2021
    Assignee: National Chung-Shan Institute of Science and Technology
    Inventors: Yung-Mao Tsuei, Chih-Chuan Lee, Chi-Fang Chiu
  • Patent number: 10879530
    Abstract: The present invention provides an anode material of nano-silicon. The anode material has multilayer-graphene as a carrier and is coated with silicon suboxide and with an amorphous carbon layer. The anode material has multilayer-graphene to serve as a carrier, nano-silicon which is adsorbed on the multilayer-graphene and both the multilayer-graphene and the nano-silicon serve as a core, silicon suboxide and the amorphous carbon layer to cover the multilayer-graphene and the nano-silicon, and a plurality of buffering holes which are disposed on the anode material to provide buffering space. An anode material of high quality is realized by coating multilayer-graphene which serves as a carrier of nano-silicon with silicon suboxide and with the amorphous carbon layer.
    Type: Grant
    Filed: December 13, 2018
    Date of Patent: December 29, 2020
    Assignee: National Chung-Shan Institute of Science and Technology
    Inventors: Po-Han Lee, Biing-Jyh Weng, Chuen-Ming Gee, Bo-Wen Chen
  • Patent number: 10872735
    Abstract: A high volumetric energy and power density supercapacitor is provided. This supercapacitor includes a coin cell, a spring lamination, a working electrode, a counter electrode, a separator, and an ionic liquid electrolyte. The working and counter electrodes are N—P doping porous graphene coated on Al substrate. The ionic liquid electrolyte is EMI-FSI. The method of producing N—P doping porous graphene includes following steps: S1: Graphite oxide is quickly transferred into the furnace, which had been held at 300° C. and the porous graphene can be produced. S2: The porous graphene and red phosphorus are put together in the evacuated tube furnace and heated to 700° C. for 1 hr. S3: Heated to 800° C. for 30 min in a mixed argon and ammoniac atmosphere and then the N—P doping porous graphene can be made. The capacitance of the supercapacitor is 105 F/g and the volumetric power density is 1.19 kW/L.
    Type: Grant
    Filed: November 28, 2018
    Date of Patent: December 22, 2020
    Assignee: National Chung-Shan Institute of Science and Technology
    Inventors: Chien-Liang Chang, Wu-Ching Hung, Jeng-Kuei Chang, Bo-Rui Pan
  • Patent number: 10865268
    Abstract: A method for preparing a wear-resistant hybrid, includes (A) providing nano-silica with hydroxyl groups on its surface to react with an isocyanate-based silane to form silica with silyl groups; (B) subjecting the silica with silyl groups to a hydrolytic condensation reaction by using a sol-gel technology to form highly bifurcated Si-HB nanoparticles with hydroxyl groups; (C) providing a diisocyanate to react with a polyol to form a urethane pre-polymer; and (D) subjecting the Si-HB nanoparticles with hydroxyl groups to an addition reaction with the urethane pre-polymer and with a chain-extending reagent to form a hybrid of Si-polyurethane (PU/Si-HB), whereby a wear-resistant hybrid of Si-polyurethane is prepared.
    Type: Grant
    Filed: October 14, 2019
    Date of Patent: December 15, 2020
    Assignee: National Chung-Shan Institute of Science and Technology
    Inventors: Chang-Lun Lee, Bei-Huw Shen, Chih-Chia Chen, Wen-Yen Hsieh, Chin-Lung Chiang
  • Patent number: D927071
    Type: Grant
    Filed: July 10, 2019
    Date of Patent: August 3, 2021
    Assignee: National Chung-Shan Institute of Science and Technology
    Inventors: Chun-Wei Chiu, Teh-Long Lai, Shyh-Chi Wu