Abstract: In an integrated circuit where one desires the most compact arrangement of fuses and active circuitry, an insulating layer is deposited over active circuitry which includes the associated interconnect layers. A protective layer made with a reflective material may be used as a conductive layer above the lower layers of the integrated circuit containing active circuitry which includes interconnect layers of any desired number. This protective layer is patterned below the areas that will later contain fuses (or antifuses or both). Above this protective layer another insulating layer is deposited. A fuse layer which may be metal or another conductive film is then deposited. This conductive layer is patterned to provide the desired fuses (and/or antifuses) as required, with some or all of the fuses aligned with the protective layer deposited underneath.

Abstract: A vertical fuse structure and methods for customization of integrated circuits include a substantially vertically-oriented interconnect structure or “fuse” which provides for a more densely packed and thus smaller programmable integrated circuit. In a preferred embodiment, a vertical interconnect structure is fabricated by forming a first interconnect layer, forming an insulating layer over the first interconnect layer in which substantially vertically-oriented vias are patterned in contact with the first interconnect layer, filling the vias with a conductive plug, and forming a second interconnect layer over the insulating layer in contact with the conductive plug. The vertical interconnect structure is preferably disconnected by forming a narrow, substantially vertical disconnect cavity through the second interconnect layer and a portion of the conductive plug, thereby removing the connection between the second interconnect layer and the plug.

Abstract: A vertical fuse structure and methods for customization of integrated circuits include a substantially vertically-oriented interconnect structure or “fuse” which provides for a more densely packed and thus smaller programmable integrated circuit. In a preferred embodiment, a vertical interconnect structure is fabricated by forming a first interconnect layer, forming an insulating layer over the first interconnect layer in which substantially vertically-oriented vias are patterned in contact with the first interconnect layer, filling the vias with a conductive plug, and forming a second interconnect layer over the insulating layer in contact with the conductive plug. The vertical interconnect structure is preferably disconnected by forming a narrow, substantially vertical disconnect cavity through the second interconnect layer and a portion of the conductive plug, thereby removing the connection between the second interconnect layer and the plug.

Abstract: A bond pad structure is provided which has a primary bond pad region electrically connected to a secondary bond pad region. The secondary bond pad region is used to test a circuit for configuration, while the primary bond pad is covered with a protective oxide. After configuration and etching to complete desired disconnections, the oxide is removed from the primary bond pad region, leaving an undamaged surface for subsequent wire bonding. The primary bond pad region and the secondary bond pad region can be a unitary structure or two separate structures.

Abstract: A method for patterning a layer of photoresist includes the steps of 1) exposing the photoresist through a standard precision mask to define all possible cut points, 2) etching all possible cut points in a dielectric layer, 3) selectively exposing a second layer of photoresist with a non-precision targeting energy beam or mask to select the desired cut points. Consequently, no custom precision masks are required to pattern the various layers of photoresist during the fabrication of application specific integrated circuits (ASICs), thereby reducing both the lead-time and costs for manufacturing ASICs.

Abstract: Methods of designing integrated circuit gate arrays include the step of generating a netlist for a gate array integrated circuit having at least first logic and signal resources therein, directly from bitstream data which characterizes a programmable logic device having a first operational functionality and the first logic and signal resources as well. The generating step is also followed by the step of using the netlist to configure the first logic and signal resources within the gate array integrated circuit to provide the first functionality. A preferred integrated circuit design system is also provided and includes a programmable logic device having pre-programmed logic and signal resources therein and a gate array device having base logic and signal resources therein which are equivalent to the unprogrammed logic and signal resources of the programmable logic device.

Abstract: A structure and method are provided to allow a die to be packaged more uniformly and in parallel with a package by utilizing a lead frame having at least one cavity within the lead frame, thereby allowing excess die-attach epoxy can flow into the cavity or cavities and reducing the amount of contact surface area between the die and lead frame.

Abstract: A structure and method are provided to allow a die to be packaged more uniformly and in parallel with a package by utilizing a lead frame having at least one cavity within the lead frame, thereby allowing excess die-attach epoxy can flow into the cavity or cavities and reducing the amount of contact surface area between the die and lead frame.

Abstract: A laser fuse structure and array are provided which use vertical vias to connect the fuse body of the laser fuse to an interconnect layer. The vias extend downward from the fuse body and thus require less layout area. The thermal conductivity of the vias are minimized by restricting their cross-sectional area and by using tungsten as the via fill material. In some embodiments, an underlying conductive line is widened to minimize damage to the line during lasering. In another embodiment, the width of the fuse body is increased to reduce the energy required to blow the fuse. As a result, unrelated circuit elements and patterned lines can be placed closer together in a laser fuse array, thereby increasing the packing density of such arrays.

Abstract: A zero static power laser fuse circuit is formed from one laser fuse and three transistors, with the fuse connected in series to a reverse-biased diode and with the common node of the fuse and diode connected to the input of a driving circuit, such as a CMOS inverter. Blowing the fuse allows a small subthreshold conduction current to flow to the common node and pull the node to the opposite logic state. This fuse circuit, which allows the capacitance at the common node to be minimized for zero static power operation, requires less circuit area than previous zero static power fuse circuits.

Abstract: A method and structure for customizing or repairing integrated circuits using passivated tungsten fuses and low-power energy beams to select which tungsten fuses are to be removed. The tungsten fuses are formed in an array to connect possible connection points of the device. A low-power energy source then selects undesired connection points, and a conventional etch removes the selected tungsten fuses, thereby customizing or repairing the integrated circuit. Because neither precision custom masks nor high energy laser sources are required, the problems associated with conventional methods are reduced or eliminated.

Abstract: A process for packaging a die uses compressible microspheres to form a stress buffer layer between the die and an epoxy encapsulant to absorb stresses on the die caused by the different thermal expansion rates of the epoxy and die during temperature changes. By using a compressible layer of microspheres or other material, the need for a nitride passivation or other insulating layer to protect the die from thermally-induced stress is eliminated. In addition, the number and size of the microspheres and the amount of epoxy used to seal the package can be adjusted so that the epoxy is approximately co-planar with the top of the package to allow the package to be handled and used with standard equipment and processes.

Abstract: A method for patterning a layer of photoresist includes the steps of 1) exposing the photoresist through a standard precision mask to define all possible patterns and features, and 2) selecting desired patterns and features with a non-precision targeting energy beam or mask. Consequently, no custom precision masks are required to pattern the various layers of photoresist during the fabrication of application specific integrated circuits (ASICs), thereby reducing both the lead-time and costs for manufacturing ASICs.

Abstract: A method and structure for customizing or repairing integrated circuits using passivated tungsten fuses and low-power energy beams to select which tungsten fuses are to be removed. The tungsten fuses are formed in an array to connect possible connection points of the device. A low-power energy source then selects undesired connection points, and a conventional etch removes the selected tungsten fuses, thereby customizing or repairing the integrated circuit. Because neither precision custom masks nor high energy laser sources are required, the problems associated with conventional methods are reduced or eliminated.

Abstract: A method for fabricating custom integrated circuits includes the steps of 1) patterning the layer to be customized with a standard precision mask to define all possible connections, vias or cut-points, and 2) using a targeting energy beam to select the desired connections, vias or cut-points for customization.Consequently, the present invention requires no custom mask so that application specific integrated circuits (ASICs) can be produced with lower lead-time and costs when compared to prior methods.In other embodiments, a non-precision configuration mask may replace the targeting energy beam, where the configuration mask can be made by conventional mask-making techniques or by applying an opaque layer to a mask blank and using a targeting energy beam to selectively remove the desired portions of the opaque areas.

Abstract: A process for packaging a die uses compressible microspheres to form a stress buffer layer between the die and an epoxy encapsulant to absorb stresses on the die caused by the different thermal expansion rates of the epoxy and die during temperature changes. By using a compressible layer of microspheres or other material, the need for a nitride passivation or other insulating layer to protect the die from thermally-induced stress is eliminated. In addition, the number and size of the microspheres and the amount of epoxy used to seal the package can be adjusted so that the epoxy is approximately co-planar with the top of the package to allow the package to be handled and used with standard equipment and processes.

Abstract: A method for fabricating custom integrated circuits includes the steps of 1) patterning a photoresist layer on an insulative layer with a standard via precision mask to define all possible vias, and 2) using a targeting energy beam to select the desired via locations on a second photoresist layer, which are then etched and interconnections made, for customization or repair of the integrated circuit. Consequently, the present invention requires no custom mask so that application specific integrated circuits (ASICs) can be produced with lower lead-time and costs when compared to prior methods.

Abstract: A method for fabricating custom integrated circuits includes the steps of 1) patterning the layer to be customized with standard precision masking techniques to define all possible connections, vias or cut-points, and 2) using a non-precision targeting energy beam to select the desired connections, vias or cut-points for customization. Consequently, the present invention requires no custom mask so that application specific integrated circuits (ASICs) can be produced with lower lead-time and costs when compared to prior methods. In other embodiments, a non-precision configuration mask may replace the targeting energy beam, where the configuration mask can be made by conventional mask-making techniques or by applying an opaque layer to a mask blank and using a targeting energy beam to selectively remove the desired portions of the opaque areas.

Abstract: In an integrated circuit where one desires the most compact arrangement of fuses and active circuitry, an insulating layer is deposited over active circuitry which includes the associated interconnect layers. A protective layer made with a reflective material may be used as a conductive layer above the lower layers of the integrated circuit containing active circuitry which includes interconnect layers of any desired number. This protective layer is patterned below the areas that will later contain fuses (or antifuses or both). Above this protective layer another insulating layer is deposited. A fuse layer which may be metal or another conductive film is then deposited. This conductive layer is patterned to provide the desired fuses (and/or antifuses) as required, with some or all of the fuses aligned with the protective layer deposited underneath.

Abstract: A method for patterning a layer of photoresist includes the steps of 1) exposing the photoresist through a standard precision mask to define all possible cut points, 2) etching all possible cut points in a dielectric layer, 3) selectively exposing a second layer of photoresist with a non-precision targeting energy beam or mask to select the desired cut points. Consequently, no custom precision masks are required to pattern the various layers of photoresist during the fabrication of application specific integrated circuits (ASICs), thereby reducing both the lead-time and costs for manufacturing ASICS.