Abstract: A photoelectric detection circuit, a photoelectric detection method, an array substrate, a display panel, and a fingerprint image acquisition method are provided. The photoelectric detection circuit includes a pixel circuit and a phototransistor. The pixel circuit includes an infrared light-emitting element and is configured to emit infrared light according to a scanning signal and a light-emitting data signal. The phototransistor is configured to detect the infrared light emitted by the pixel circuit and reflected by a detection object in response to a sampling control signal.

Abstract: Disclosed are a fusion peptide of CD4 helper T cell epitopes, a nucleic acid encoding the same and an immunogenic composition comprising the same. The epitope fusion peptide comprises a cytomegalovirus epitope and an influenza virus epitope. The epitope fusion peptide can substantially improve the level of cellular immune response to a target immunogen, particularly a weak immunogen, and is an effective means for overcoming the immune tolerance of immune system to an antigen, particularly to a tumor antigen or an infection-related antigen, and is suitable for efficiently enhancing the efficacy of vaccine.

Abstract: A flexible cover board, a manufacturing method thereof, and a display device are provided. The flexible cover board includes a flexible substrate, a buffer layer, a first hardened layer, an organic layer, and a second hardened layer. The buffer layer is disposed on a side surface of the flexible substrate, and at least one through-hole penetrating the buffer layer is filled with a nanomaterial. The first hardened layer, the organic layer, and the second hardened layer stacked in sequence are disposed on a side surface of the buffer layer away from the flexible substrate.

Abstract: Directly beneath p?-type base regions, n-type storage regions are provided. The storage regions contain hydrogen donors as an impurity and have an impurity concentration higher than that of the n?-type drift region. The storage regions are formed by hydrogen ion irradiation from a back surface of a semiconductor substrate. The storage regions have a peak hydrogen concentration and are at positions that coincide with where the hydrogen ions have been irradiated. By the hydrogen ion irradiation, a crystal defect region that is a carrier lifetime killer region is formed concurrently with the storage regions, closer to the back surface of the semiconductor substrate than are storage regions. The crystal defect region has a crystal defect density with a peak density at a position closer to the back surface of the semiconductor substrate than are the storage regions. A semiconductor device having such storage regions and a carrier lifetime killer region is enabled.

Abstract: A container service management method and apparatus, to integrate a container service and a container service management function into an NFV MANO system. The method includes: receiving, by a container service management entity, a creation request for a container service, where the creation request is used to request to create a specified container service, and the creation request carries a first management policy for managing a lifecycle of the specified container service; creating, by the container service management entity, the specified container service in response to the creation request; and managing, by the container service management entity, the lifecycle of the specified container service according to the first management policy.

Abstract: A planet carrier of a planetary gearbox has a first contact surface and a second contact surface. The first contact surface and/or the second contact surface are divided by a connecting straight line running through the planet carrier axis of rotation and the planet gear axis of rotation into a first contact surface portion and a second contact surface portion. The first contact surface portion encloses a first angle with the connecting straight line, the second contact surface portion encloses a second angle with the connecting straight line, the first angle and the second angle lie in a plane perpendicular to the planet carrier axis of rotation, and the first angle and the second angle are unequal and at least one of the angles is greater than 90°. The invention further relates to a planetary gearbox having a planet carrier of this kind and at least one planet gear.

Abstract: A peptoid compound, a nanometer carrier, a pharmaceutical composition, and use of the pharmaceutical composition in manufacture of a medicament for treatment of a disease related to human epidermal growth factor receptor 1 (EGFR). The peptoid compound includes: cysteine (Cys) subunit, 1,4-butanediamine (Nlys) subunit, piperonylamine subunit, ?-alanine subunit and 1-naphthylamine subunit. The peptoid compound has high affinity and targeting effect to the EGFR protein, and high selectivity, and meanwhile has high medicament loading efficiency, no toxicity, and high safety.

Abstract: One embodiment comprises: a semiconductor substrate; a pattern layer disposed on the semiconductor substrate and comprising a plurality of patterns that are spaced apart from each other; a nitride semiconductor layer disposed on the pattern layer; and a semiconductor substrate disposed on the nitride semiconductor layer and comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, wherein the thermal conductivity of the pattern layer is higher than the thermal conductivity of the semiconductor substrate and the thermal conductivity of the semiconductor structure.

Abstract: An HME device, used in a closed breathing circuit of a ventilation system, has a housing with an inlet opening and with an outlet opening, an HME chamber (50a; 50b; 50c; 50d; 50e; 50f; 50g; 50h; 50i) arranged between the inlet opening and the outlet opening for receiving an HME medium and a switching mechanism (70a; 70b; 70c; 70d; 70e; 70f; 70g; 70h; 70i). The HME device can be switched over between an HME mode (M1), in which an HME fluid passage is provided from the inlet opening through the HME chamber to the outlet opening, and a bypass mode (M2), in which a fluid bypass passage is provided from the inlet opening past the HME chamber through a bypass channel (80a; 80b; 80d; 80e; 80f; 80h) in the housing to the outlet opening. The bypass channel is blocked with respect to the HME chamber in the bypass mode (M2).

Abstract: A method of updating a server knowledge graph, is performed by a server and includes obtaining a server knowledge graph of the server, and obtaining a plurality of device knowledge graphs by receiving a device knowledge graph from each of a plurality of devices. The method further includes generating a knowledge graph for server knowledge graph extension, based on the obtained plurality of device knowledge graphs, and updating the obtained server knowledge graph, using the generated knowledge graph for server knowledge graph extension.

Abstract: A method of arrangement of a leaky coaxial cable combination structures, comprising: providing at least two leakage coaxial cables, each of the at least two leakage coaxial cables has a narrow body; and providing a jumper wire mechanism between at least two leakage coaxial cables; wherein the jumper wire mechanism has two ends, and the two ends are respectively connected to one end of each of the at least two leakage coaxial cables.

Abstract: The present invention relates to a fusion polypeptide that inhibits TLR1/2, TLR2/6, TLR7, TLR8 and TLR9 signaling pathways as well as Toll-like receptor 4 (TLR4) and TLR3, and a pharmaceutical composition for preventing or treating TLR pathway mediated diseases. The fusion peptide of the present invention has an excellent effect of inhibiting TLR4 and various TLR pathways and can be effectively used in preventing and treating various TLR pathway mediated diseases caused by the signaling pathways, such as autoimmune diseases, inflammatory diseases and degenerative neurological diseases, by inhibiting the TLR mediated immune responses.

Abstract: A voltage compensation method includes: within a touch time period, multiplexing common electrode blocks as touch electrodes, and scanning the common electrode blocks in at least one column sequentially to detect a capacitance of each scanned common electrode block; within a time period between detecting the capacitance of each scanned common electrode block and starting an Nth display time period after the touch time period, calculating power consumption for each scanned common electrode block in accordance with the capacitance thereof, acquiring a corresponding common electrode voltage compensation value based on the power consumption, and adding the common electrode voltage compensation value to a reference common electrode voltage to acquire a compensated common electrode voltage applied to each scanned common electrode block; and within the Nth display time period, adjusting a common electrode voltage applied to each scanned common electrode block into the compensated common electrode voltage.

Abstract: A method for adaptive treatment planning is provided. The method may include obtaining a planning image volume of a subject, a treatment image volume of the subject, and a first treatment plan related to the planning image volume of the subject, each of the planning image volume and the treatment image volume including an ROI of the subject. The method may also include registering the planning image volume and the treatment image volume, and determining a first contour of the ROI in the registered planning image volume and a second contour of the ROI in the registered treatment image volume. The method may also include evaluating whether an error exists in at least one of the registration or the contour determination based on the first contour and the second contour, and determining a second treatment plan with respect to the treatment image volume based on the evaluation result.

Abstract: A semiconductor device including a substrate with a first region and a second region and first and second transistors in the first and second regions, respectively. The first transistor includes a first gate insulating layer on the substrate, a first etch-stop layer, and a first work function layer on the first etch-stop layer. The second transistor includes a second gate insulating layer on the substrate, a second etch-stop layer, and a second work function layer on the second etch-stop layer. At least one of the first and second work function layers is chamfered.

Abstract: A blood purification device used with a blood circuit includes an arterial-side line and a venous-side line attached to a blood purifier to which, at the ends thereof, the arterial-side line and the venous-side line are connected, the blood purification device including: a supply line connected to a supply unit which supplies a priming fluid, and which is capable of being connected to a leading end of the venous-side line; a discharge line connected to a discharge unit which discharges the priming fluid after use, and which is capable of being connected to a leading end of the arterial-side line; and a blood pump which is disposed upon the arterial-side line. By driving the blood pump in a state of the supply line being connected to the venous-side line and the discharge line being connected to the arterial-side line, the blood circuit and the blood purifier are primed.

Abstract: A display driving circuit includes a central area and a boundary area surrounding the central area. The display driving circuit includes a first crack detector circuit in the central area; and a first crack sensing line in the boundary area, wherein the first crack detector circuit is configured to detect a crack in the first crack sensing line in response to a first test command, and output a test result signal including information about a presence or an absence of a crack in the first crack sensing line.