Abstract: The present embodiment relates to a camera device comprising: a camera module including a first substrate, an image sensor arranged on the first substrate, and a lens arranged at a position corresponding to that of the image sensor, a first driving unit for rotating the camera module around a first axis that is vertical with respect to the optical axis of the image sensor; a second driving unit for rotating the camera module around a second axis that is vertical with respect to the optical axis and the first axis; and a third driving unit for rotating the camera module around the optical axis, wherein, when the camera module moves by means of at least any one from among the first driving unit, the second driving unit, and the third driving unit, the lens moves together with the image sensor while aligned with the optical axis.

Abstract: An array substrate is provided. The array substrate includes a base substrate and a plurality of gate lines, a plurality of data lines, a common electrode layer and a plurality of pixel units arranged in an array disposed on the base substrate. Each of the pixel units includes a plurality of sub-pixel units defined by gate lines and data lines disposed to intersect each other laterally and vertically. The common electrode layer includes a plurality of common electrode blocks that double as self-capacitance electrodes, each of the common electrode blocks is connected with at least one wire, and the wires are in the middle of sub-pixel units of a same column.

Abstract: The present disclosure discloses a preview-image display while a terminal device photographs a picture. The method comprises: obtaining, by a terminal device, a first preview image and a second preview image, wherein the first preview image is based on a current picture in a first mode and the second preview image is based on the current picture in a second mode; and displaying, by the terminal device, a first part of the first preview image and a second part of the second preview image in a preview area, wherein the first part of the first preview image and the second part of the second preview image constitute a third preview image based on the current picture.

Abstract: The display substrate includes: a display area and a bezel area, the display area including a first display area and a second display area; first light emitting devices in the first display area and second light emitting devices in the second display area; first pixel drive circuits in the bezel area and second pixel drive circuits in the second display area, the first pixel drive circuits are connected to the first light emitting devices, and the second pixel drive circuits are connected to the second light emitting devices; and shift registers in the bezel area, one shift register is connected with the first pixel driving circuits connected with one row of the first light emitting devices and the second pixel driving circuits connected with one row of the second light emitting devices.

Abstract: An example camera movement control method includes: activating, by an electronic device, a camera functionally connected to the electronic device; displaying, on the basis of the activation of the camera, an image of an object outside the electronic device on a display functionally connected to the electronic device; confirming the movement of the image of the object; and correcting the image by means of an image stabilizer functionally connected to the electronic device on the basis of the movement. The correcting of the image can include: calculating an image correction angle with respect to the movement; and controlling the image stabilizer based on the image correction angle.

Abstract: Disclosed in the present application are a camera module, and a photosensitive assembly and a manufacturing method therefor. The photosensitive assembly comprises a circuit board, a photosensitive chip electrically connected to the circuit board, and a shaping member provided on the circuit board. A lower surface of the photosensitive chip is attached to the shaping member to form an accommodating space with the shaping member and the circuit board. The accommodating space is configured so that the photosensitive chip is bent downward during a process of assembling the photosensitive assembly. In this way, the photosensitive chip is bent into a shape adapted to the actual focal plane during the assembly process, so as to improve the imaging quality.

Abstract: In accordance with an aspect of the present disclosure, there is provided a method for controlling connection time of a terminal by an Access and Mobility Management Function (AMF) node. The method comprises receiving information on first connection time from the terminal; and transmitting or receiving data to or from the terminal during the first connection time, wherein the information on the first connection time indicates time to activate a PDU session between the terminal and the AMF node.

Abstract: An electronic device comprises a display, a memory, a wireless communication circuit supporting a Wi-Fi Direct protocol, and a processor operatively connected to the display, the memory, and the wireless communication circuit, wherein the processor may be configured to create, through the wireless communication circuit, a first group on the basis of a first channel attribute with an external electronic device, the first channel attribute including at least one of a frequency band or a bandwidth, detect an occurrence of an event associated with a power save, transmit, through the wireless communication circuit, a first request message to the external electronic device that requests to change the first channel attribute to a second channel attribute at least partially different from the first channel attribute, receive, through the wireless communication circuit, a first response message from the external electronic device, store profiles of the first group in the memory, and create a second group on the basis

Abstract: A semiconductor device may include a semiconductor fin, a source/drain region extending from the semiconductor fin, and a gate electrode over the semiconductor fin. The semiconductor fin may include a first well and a channel region over the first well. The first well may have a first dopant at a first dopant concentration and the channel region may have the first dopant at a second dopant concentration smaller than the first dopant concentration. The first dopant concentration may be in range from 1017 atoms/cm3 to 1019 atoms/cm3.

Abstract: A communication system includes a master device and a slave device. The master device can transmit a signal to a slave device. The slave device includes an antenna, a sensor unit, an RFID unit, a changeover switch that connects the antenna to one of the sensor unit and the RFID unit, and a switching circuit that switches the changeover switch based on a switching signal transmitted from the master device. When the antenna in the slave device receives the switching signal from the master device, the switching circuit switches the changeover switch in the slave device from a state in which the antenna and the sensor unit are connected to a state in which the antenna and the RFID unit are connected, in accordance with the switching signal.

Abstract: An image sensor including a substrate having first and second surfaces that are opposite to each other. The substrate includes unit pixel regions having photoelectric conversion regions. A semiconductor pattern is disposed in a first trench defined in the substrate and defines the unit pixel regions. The semiconductor pattern includes a first semiconductor pattern and a second semiconductor pattern disposed on the first semiconductor pattern. A back-side insulating layer covers the second surface of the substrate. The first semiconductor pattern includes a side portion extended along an inner side surface of the first trench and a bottom portion connected to the side portion and disposed closer to the second surface of the substrate than the side portion. The second semiconductor pattern extends toward the second surface of the substrate and is spaced apart from the back-side insulating layer with the bottom portion of the first semiconductor pattern interposed therebetween.

Abstract: A method and an apparatus for signal synchronization are disclosed. The method for signal synchronization includes: A self-synchronizing first terminal device broadcasts first synchronization information, determines whether the first terminal device and a second terminal device have implemented signal synchronization when receiving second synchronization information sent by the second terminal device, and determines, based on a determining result, whether to synchronize with the second terminal device. This reduces a probability of communication interruption caused by synchronization source switching by the first terminal device after the second terminal device performs synchronization by using the first terminal device as a synchronization source. The method for signal synchronization may be applied to scenarios such as the intelligent driving, intelligent connected vehicles, and internet of vehicles.

Abstract: A micro-LED display device mainly has a plurality of pixel areas arranged in matrix and a driving circuit. Each pixel area has a plurality of sub-pixel areas arranged adjacent to each other. In a first driving mode, the driving circuit enables the rows of pixel areas in sequence. When one of rows of pixel areas is enabled, the driving circuit controls one sub-pixel area of each pixel area on the enabled row of pixel areas to display an image color. In a second driving mode, the rows of pixel areas are also enabled in sequence. When one of rows of pixel area is enabled, the driving circuit drives all sub-pixel areas of each pixel area on the enabled row of pixel area to synchronously display the same image color. Therefore, a high-brightness requirement is met, and the overall power consumption is not increased.

Abstract: The present disclosure relates to a communication method and system for converging a 5th-Generation (5G) communication system for supporting higher data rates beyond a 4th-Generation (4G) system with a technology for Internet of Things (IoT). The present disclosure may be applied to intelligent services based on the 5G communication technology and the IoT-related technology, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services.

Abstract: The present disclosure is directed to a method for the fabrication of MiM capacitor structures with metallic electrodes having nitrogen-rich metal nitride layers. The method includes depositing a first electrode bilayer on a first interconnect disposed on a substrate, where the first electrode includes a first layer and a second layer with a different nitrogen concentration. The method also includes depositing a dielectric layer on the first electrode bilayer and depositing a second electrode bilayer on the first interconnect where the second electrode includes a third layer and a fourth layer with a different nitrogen concentration. The method further includes patterning the first electrode bilayer, the dielectric layer, and the second electrode bilayer to form a capacitor structure on the first interconnect layer.

Abstract: The present disclosure relates to paging methods and apparatus. One example method is applied to a first access network device. The first access network device belongs to a first network, a second access network device belongs to a second network, and the first network may be different from the second network. When UE accesses the first network and downlink data of the second network arrives, the UE may receive the data of the second network. The first access network device receives downlink data of a terminal from a first core network device, where the first core network device belongs to the first network.

Abstract: There is provided a semiconductor device capable of improving performance and reliability of a device, by adjusting the arrangement of penetration patterns included in an electrode support for supporting the lower electrode. The semiconductor device includes a plurality of lower electrodes that are aligned with each other on a substrate along a first direction and a second direction different from the first direction, and a first electrode support that supports the lower electrodes, and includes a plurality of first penetration patterns, wherein the first electrode support includes a center region, and an edge region defined along a periphery of the center region, wherein the first penetration patterns include center penetration patterns that are spaced apart by a first interval in the center region, and wherein the first penetration patterns include edge penetration patterns that are spaced apart by a second interval different from the first interval in the edge region.

Abstract: A method and apparatus for determining a resource position, a base station, and a storage medium are provided. The method includes: acquiring a specified transmission time difference representing a transmission time difference between a second band and a first band; determining a first resource position, which is a first-type resource position configured for a first device to transmit communication data in the first band; and determining a second resource position based on the first resource position, the specified transmission time difference, and at least one of following parameters: at least one second-type resource position of the first band or at least one second-type resource position of the second band. The second resource position is a second-type resource position configured for a second device to transmit feedback data of the communication data.

Abstract: A method of manufacturing a semiconductor device includes sequentially stacking a mold layer and a supporter layer on a substrate, forming a plurality of capacitor holes passing through the mold layer and supporter layer, forming a plurality of lower electrodes filling the capacitor holes, forming a supporter mask pattern having a plurality of mask holes on the supporter layer and the lower electrodes, and forming a plurality of supporter holes by patterning the supporter layer. Each of the plurality of lower electrodes has a pillar shape, and each of the mask holes is between four adjacent lower electrodes and has a circular shape.