Abstract: A resource multiplexing method and apparatus are provided, to determine a set of available symbols in an NR IAB system. A first node determines a time domain position of a DU resource of a communications device, and determines a time domain position of an MT resource of the communications device based on the time domain position and a type of the DU resource and guard interval information. Alternatively, a first node determines a time domain position of an MT resource of a communications device, and determines a time domain position of a DU resource of the communications device based on the time domain position and a type of the MT resource and guard interval information.

Abstract: A semiconductor device includes a first source/drain, a second source/drain isolated from direct contact with the first source/drain in a horizontal direction, a channel extending between the first source/drain and the second source/drain, a gate surrounding the channel, an upper inner spacer between the gate and the first source/drain and above the channel, and a lower inner spacer between the gate and the first source/drain and under the channel, in which the channel includes a base portion extending between the first source/drain and the second source/drain, an upper protrusion portion protruding upward from a top surface of the base portion, and a lower protrusion portion protruding downward from a bottom surface of the base portion, and a direction in which a top end of the upper protrusion portion is isolated from direct contact with a bottom end of the lower protrusion portion is oblique with respect to a vertical direction.

Abstract: The present disclosure relates to a communication method and system for converging a fifth generation (5G) communication system for supporting higher data rates beyond a fourth generation (4G) system with a technology for Internet of things (IoT). The present disclosure may be applied to intelligent services based on the 5G communication technology and the IoT-related technology, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. A method of operating a terminal for a slot aggregation signaling is provided. The method includes receiving control information including slot aggregation information from a base station, receiving data in aggregated slots based on the slot aggregation information from the base station, and transmitting an acknowledgement (ACK) corresponding to the data to the base station.

Abstract: Provided are a black phosphorus-two dimensional material complex and a method of manufacturing the black phosphorus-two dimensional material complex. The black phosphorus-two dimensional material complex includes: first and second two-dimensional material layers, which each have a two-dimensional crystal structure and are coupled to each other by van der Waals force; and a black phosphorus sheet which between the first and second two-dimensional material layers and having a two-dimensional crystal structure in which a plurality of phosphorus atoms are covalently bonded.

Abstract: The present disclosure provides an information transmitting method, an information receiving method, and a device. The information transmitting method is applied to user equipment, and includes: transmitting transmission configuration information through a physical sidelink channel; wherein the transmission configuration information includes first indication information, the first indication information is used for indicating that at least one slot is a downlink slot, a flexible slot or an uplink slot, and/or indicating that at least one symbol is a downlink symbol, a flexible symbol or an uplink symbol; the physical sidelink channel includes at least one of a physical sidelink broadcast channel, a physical sidelink shared channel or a physical sidelink control channel.

Abstract: An apparatus includes a substrate of a first conductivity, an extended drain region of a second conductivity formed over the substrate, a body region of the first conductivity formed in the extended drain region, a source region of the second conductivity formed in the body region, a drain region of the second conductivity formed in the extended drain region, a first dielectric layer formed over the body region and the extended drain region, a second dielectric layer formed over the extended drain region, and between the first dielectric layer and the drain region, a first gate formed over the first dielectric layer, and a second gate formed over the second dielectric layer, wherein the second gate is electrically connected to the source region.

Abstract: The embodiments of the present disclosure provides a downlink control channel detection method, a terminal and a network side device. The method includes: performing energy-saving signal detection by a terminal, wherein the energy-saving signal is at least used to indicate detection information of a downlink control channel; detecting the downlink control channel by the terminal according to the detection information if the energy-saving signal is detected.

Abstract: The present disclosure provides a semiconductor device and a fabrication method thereof. The semiconductor device includes a III-nitride layer, a gate, a connection structure, and a gate bus. The gate is disposed over the III-nitride layer. The connection structure is disposed over the gate. The gate bus extends substantially in parallel to the gate and disposed over the connection structure from a top view perspective. The gate bus is electrically connected to the gate through the connection structure.

Abstract: This application discloses a data receiving method, which may be applied to Internet of Vehicles, for example, V2X, LTE-V, and V2V. A first terminal apparatus may receive first control information from a second terminal apparatus, then receive second control information from the second terminal apparatus based on the first control information, and further receive, based on the first control information and the second control information, data sent by the second terminal apparatus. Therefore, the second control information and the data can be received after blind detection is performed on the first control information for a relatively small quantity of times, thereby improving efficiency of receiving the second control information and the data.

Abstract: A semiconductor device with different configurations of nanostructured channel regions and a method of fabricating the semiconductor device are disclosed. The semiconductor device includes a fin structure disposed on a substrate, a stack of nanostructured horizontal channel (NHC) regions disposed on the fin structure, a nanostructured vertical channel (NVC) region disposed within the stack of NHC regions, a source/drain (S/D) region disposed on the fin structure, and a gate structure disposed on the NHC regions and on portions of the NVC region that are not covered by the NHC regions and the fin structure.

Abstract: A device to device (D2D) communication apparatus and method are provided. The D2D communication apparatus includes a transceiver configured to receive resource configuration information indicating D2D resources configured in a serving cell from a base station (BS) of the serving cell, and a controller configured to determine locations of resources for transmission or reception of signals for D2D communication based on the resource configuration information. The resource configuration information includes information about length of common D2D resources configured in a plurality of cells and additional D2D resources configured in the serving cell and information about length of common and additional D2D resources of a cell that configures maximum-sized additional D2D resources among the serving cell and neighboring cells.

Abstract: A method includes: forming a dielectric fin protruding above a substrate; forming a channel layer over an upper surface of the dielectric fin and along first sidewalls of the dielectric fin, the channel layer including a low dimensional material; forming a gate structure over the channel layer; forming metal source/drain regions on opposing sides of the gate structure; forming a channel enhancement layer over the channel layer; and forming a passivation layer over the gate structure, the metal source/drain regions, and the channel enhancement layer.

Abstract: The present invention provides an information record reporting method and apparatus. The information record reporting method is applied to a network side device, and comprises: sending a random access related information record instruction to a terminal, the random access related information record instruction instructing the terminal to record random access related information.

Abstract: A semiconductor device and method of manufacture are provided which help to support contacts while material is removed to form air gaps. In embodiments a contact is formed with an enlarged base to help support overlying portions of the contact. In other embodiments a scaffold material may also be placed prior to the formation of the air gaps in order to provide additional support.

Abstract: The disclosure provides a method and a device in a User Equipment (UE) and a base station supporting random access. The UE first transmits a first radio signal, and then receives a second radio signal. A first bit block is used for generating the first radio signal, the first bit block includes a positive integer number of bits, the first bit block carries a first identifier and a first data block, the first bit block lacks a field used for indicating RRC connection request cause information, a field used for indicating RRC connection reestablishment request cause information or a field used for indicating RRC connection resume request cause information compared with a Msg3, the first data block includes a positive integer number of higher-layer bits, the second radio signal carries a second identifier. The first identifier is equal to the second identifier.

Abstract: A highly efficient fuel cell capable of reasonably and effectively utilizing an internal reforming reaction is obtained even when an anode layer provided in a fuel cell element has a thickness of several tens of micron order. A fuel cell single unit is configured to include a reducing gas supply path for supplying a gas containing hydrogen to an anode layer, a steam supply path for supplying steam generated in a fuel cell element to the reducing gas supply path, and an internal reforming catalyst layer for producing hydrogen from a raw fuel gas by a steam reforming reaction are provided in the fuel cell single unit, and at least one steam supply path is provided on an upstream side of the internal reforming catalyst layer in a flow direction of the reducing gas supplied to the anode layer.

Abstract: Provided is a wireless communication terminal that wirelessly communicates. the wireless communication terminal includes: a transceiver for transmitting and receiving a wireless signal; and a processor for processing the wireless signal. The processor is configured to perform a transmission based on a transmission opportunity (TXOP) limit which is a maximum value of a TXOP, which is a time interval in which a wireless communication terminal has a right to initiate a frame exchange sequence in a wireless medium.

Abstract: A display device includes a substrate, a semiconductor layer, an insulating layer, and a conductive layer. The semiconductor layer is disposed on the substrate, includes a channel of a first transistor, and includes a channel of a second transistor. The insulating layer is disposed on the semiconductor layer. The conductive layer is disposed on the insulating layer, includes a gate electrode of the first transistor, and includes a gate electrode of the second transistor. The channel of the first transistor includes a first first-element impurity ion and a second-element impurity ion different from the first first-element impurity ion. The channel of the second transistor includes a second first-element impurity ion identical to the first first-element impurity ion.

Abstract: Disclosed is a massager, including a housing and a driving device. A massage rod and a massage head are arranged at an end of the housing, an extension direction of the massage rod is generally the same as that of the massage head, an extension length of the massage rod is greater than that of the massage head, a cross-sectional size of the massage rod is greater than that of the massage head, and the massage head is located on an outer side of the massage rod. The driving device is drivingly connected to the massage head. The massage head is arranged on a side of the massage rod, and both a head portion of the massage rod and the massage head located on a side of the massage rod are capable of massaging the body of a user.

Abstract: A light-emitting diode includes an epitaxial layered structure and a conductive mirror structure which includes a first electrically conductive layer and a second electrically conductive layer disposed on the epitaxial layered structure in such order. The first and second electrically conductive layers respectively have a first reflectance R1 and a second reflectance R2 to light emitted from the epitaxial layered structure, and R1<R2.