Abstract: A method for forming spacers of a gate of a transistor is provided, including: providing an active layer surmounted by a gate; forming a dielectric layer covering the gate and the active layer, the dielectric layer having lateral portions, and basal portions covering the active layer; anisotropically modifying the basal portions by implantation of hydrogen-based ions in a direction parallel to the lateral sides of the gate, forming modified basal portions; annealing desorbing the hydrogen from the active layer and transforming the modified basal portions into second modified basal portions; and removing the modified basal portions by selective etching of the modified dielectric material with respect to the non-modified dielectric material and with respect to the semiconductive material, so as to form the spacers on the lateral sides of the gate.

Abstract: A laser device includes a III-V heterostructure amplifying medium; a silicon optical waveguide having a coupling section facing a central portion of the amplifying medium, a propagation section and a first transition section between the coupling section and the propagation section; and a first and a second reflective structure allowing a Fabry-Perot type resonant cavity to be formed between them for the amplifying medium. The coupling section includes a refractive index disruption region provided with micro-reflectors designed to reduce the thickness and/or width of the coupling section. The first reflective structure is formed in a section of the waveguide with a first thickness. The second reflective structure is formed in a section of the waveguide, which has the first thickness and which is separated from the coupling section by a second transition section of the waveguide, the second transition section having a second thickness greater than the first thickness.

Abstract: The invention relates to an electrochemical device that includes an electrochemical unit. The electrochemical unit includes a stack of SOEC/SOFC-type solid oxides operating at high temperatures, a clamping system provided with two clamping plates, referred to as the first clamping plate and second clamping plate, respectively, between which the stack is clamped, one and/or both of the two clamping plates having at least one gas inlet and at least one gas outlet. The unit includes heating means which are designed to ensure the heating of the electrochemical unit and are integrated into said unit. The device includes a containment box, housed in a volume, referred to as internal volume V, the electrochemical unit, the internal volume V being delimited by a surface, referred to as the internal surface S, of the containment box, which follows the shape of the electrochemical assembly.

Abstract: An array of at least two photodiodes, wherein each photodiode includes an absorption region and a capture region, the capture region including an electrically conductive pad, the absorption region being in contact with the capture region, the absorption region being configured to absorb an incident radiation on the photodiode and to enable a diffusion of charge carriers, in which each absorption region is separated from the other absorption regions, and wherein the absorption region of each photodiode has a convex shape towards the incident radiation.

Abstract: A photoacoustic detecting device to be applied, via a contact face, against a medium to be analyzed, the device comprising: a hollow cavity; a light source that is pulsed or amplitude-modulated; an acoustic detector configured to detect an acoustic wave extending through the cavity, the device further comprises an interface membrane, forming the contact face, the interface membrane being configured to: form an interface between the gas, filling the cavity, and the medium to be analyzed; block passage of a liquid or gel between the medium to be analyzed and the cavity; and generate an acoustic pressure wave inside the cavity, under the effect of a variation in the temperature of the interface membrane, the temperature variation of the interface membrane being induced by heating of the medium resulting from illumination of the medium.

Abstract: A control unit of an SRAM memory for triggering an initialisation, selected from different possible distinct initialisation types, of at least one given group of SRAM memory cells of the SRAM memory, the control unit configured to adopt a “locked” operating mode, in which it triggers an initialisation of the given group of cells according to a “default” initialisation type corresponding to a first initialisation type from the different distinct initialisation types or an erasing, and holds at the output the “hard masking” command signal in the same given state as long as a particular so-called “unlocking” signal sequence is not received on the hard masking inputs, the control unit being further configured, subsequently to the reception of the particular so-called “unlocking” signal sequence, to enable the initialisation of the given group according to different initialisation types which may be distinct from the default initialisation.

Abstract: An electrochemical system includes an electrochemical device having a stack of n solid oxide electrochemical cells, n being an integer greater than or equal to 1. The electrochemical system also includes at least n?1 interconnection plates which are interposed between the electrochemical cells, and means for supplying gas to the electrochemical cells and means for collecting gas produced by the electrochemical cells. The electrochemical system further includes means for electrically connecting the system to the outside. The electrochemical device also includes heating means integrated into the stack, said heating means comprising electrical conductors housed in the clamping plates.

Abstract: The invention relates to the field of molecular biology and particularly novel genes that encode pesticidal proteins useful for controlling pests, particularly plant pests. These proteins and the nucleic acid sequences that encode them are useful in preparing pesticidal compositions and in the production of transgenic pest-resistant plants.

Abstract: A method for producing nanostructures having a metal oxide shell, carried by a top face of a substrate whose greatest dimension is greater than or equal to 100 mm by MOCVD metalorganic chemical vapour deposition, including successive steps carried out in a reactor configured for MOCVD deposition of nucleation and growth. The nucleation step includes forming non-contiguous metal nuclei by depositing a metal by MOCVD using a metalorganic precursor on the top face of the substrate and oxidising the metal of the metal nuclei, to form oxidised nuclei and ensure stabilisation of the nuclei. The growth step includes depositing a metal by MOCVD using the metalorganic precursor, to form non-contiguous nanostructures by growth of the oxidised nanostructures, and oxidising the deposited metal of the nanostructures formed in the nucleation to form oxidised nanostructures.

Abstract: A process for obtaining a nitride (N) layer preferably obtained from at least one of gallium (Ga), indium (In) and aluminium (Al), may include: on a stack including a substrate and at least the following layers successively disposed from the substrate: a creep layer having a glass transition temperature, Tglass transition, and a crystalline layer, forming pads by etching the stack so that each pad includes at least a creep segment formed by at least a portion of the creep layer, and a crystalline segment formed by the crystalline layer; and growing by epitaxy a crystallite on each of the pads and continuing the epitaxial growth of the crystallites so as to form the nitride layer. The epitaxial growth may be carried out at a temperature Tepitaxy, such that Tepitaxy?k1×Tglass transition, with k1 being 0.8.

Abstract: A heat exchanger has first and second heat-exchange modules including first and second fluid-circulation systems, partition plates sandwiched between first and second heat-exchange modules and each fluidically disconnecting the first and second fluid-circulation systems from one another. At least one of the heat-exchange modules includes a stack of shaped plates superposed along a longitudinal axis, and each consisting of at least one hollowed-out zone passing through it and of a surrounding solid zone of constant thickness, the corresponding fluid-circulation system being defined by the hollowed-out zones of the stack and extending between the adjacent partition plates, at least part of the hollowed-out zone of one of the shaped plates being superposed with a solid zone of another shaped plate adjacent to it, and vice versa.

Abstract: A heat exchanger includes first and second modules having first and second systems for circulating first and second fluids respectively, the first fluid comprising different first and second fluid components, partition plates in contact with the adjacent modules and each fluidically disconnecting the first and second circulation systems from one another. Each of the second modules includes a third circulation system, fluidically disconnected from the second circulation system, the first and third circulation systems being fluidically connected through the partition plate. The exchanger introduces a change in phase of the second component by exchanging heat between the first and second fluids and directing the first and second components out of the exchanger through the first and third circulation systems.

Abstract: A heat exchanger including: first and second heat-exchange modules comprising fluid-circulation systems, partition plates which fluidically disconnect adjacent fluid-circulation systems, at least one of the heat-exchange modules including: a frame plate of constant thickness, including a through-aperture, and an insert fully housed in the aperture and of a thickness equal to the thickness of the frame plate, and consisting of a single shaped plate or a plurality of shaped plates forming a stack and each consisting of at least one hollowed-out zone passing through it and a surrounding solid zone of constant thickness, the corresponding fluid-circulation system being formed in the hollowed-out zone of the single plate or of each plate of the stack and bounded by the surrounding solid zone or zones and by the adjacent partition plates.

Abstract: A quantum device includes several spin qubits arranged as a matrix and each comprising a quantum dot; several electrometers each electrostatically coupled to a potential well of one of the quantum dots; and circuits for applying an excitation signal to an input electrode of each electrometer. The circuits are configured such that a value of the frequency, phase or maximum amplitude of each excitation signal is different from that of the other excitation signals, and the circuits apply a same excitation signal on electrometers coupled to a same row of qubits. The device also includes a transimpedance amplifier having an input coupled to output electrodes of the electrometers and a demultiplexing circuit including an input electrically coupled to an output of the transimpedance amplifier and configured to demultiplex the output signals to be delivered by the electrometers.

Abstract: An optical scanner (100) which comprises: a mirror (200), pivotally mounted about a first pivot axis and is partially transparent from its front face (210) towards its rear face (220) to the light radiation; a light source (300) intended to emit an incident light radiation on the front face (210) of the mirror (200); the scanner is characterised in that the rear face (220) comprises a structuration formed by at least one facet essentially planar and inclined with respect to the front face (210) so that a light radiation, incident on the front face (210), and transmitted by the at least one facet (220i) undergoes a deflection with respect to the angle of incidence of said light radiation on the front face (210).

Abstract: A method for managing the thermal behavior of a battery includes employing a thermal model of the battery. The model is configured to estimate, at each point in time, a thermal power generated by the battery depending on a measured electrical power passing through the battery. The thermal model includes a charging law and a discharging law, each law being based on the state of charge of the battery and on its temperature and incorporating the time constant of the battery. The method also includes controlling the thermal power generated by the battery.

Abstract: This invention relates to a method of calibrating a direct neural interface with continuous coding. The observation variable is modelled by an HMM model and the control variable is estimated by means of a Markov mixture of experts, each expert being associated with a state of the model. During each calibration phase, the predictive model of each of the experts is trained on a sub-sequence of observation instants corresponding to the state with which it is associated, using an REW-NPLS (Recursive Exponentially Weighted N-way Partial Least Squares) regression model. A second predictive model giving the probability of occupancy of each state of the HMM model is also trained during each calibration phase using an REW-NPLS regression method. This second predictive model is used to calculate Markov mixture coefficients during a later operational prediction phase.

Abstract: The invention relates to a method for manufacturing an optoelectronic device (1) including an array of diodes (D1, D2, D3) and an array of colour conversion portions (P1, P2), including the following steps: providing the array of diodes (D1, D2, D3), and the upper electrode layers (E1, E2, E3); depositing a dielectric layer (26) having a substantially zero surface potential; applying a potential difference between an electrode (2) and the first upper electrode layers (E1), resulting in the formation of first patterns (M1) with non-zero surface potential in the dielectric layer (26); producing the first colour conversion portions (P1), by contacting the dielectric layer (26) with a colloidal solution (S1) containing first photoluminescent particles (p1).

Abstract: A method for etching at least a portion of a layer based on a III-N material includes exposing a least one portion of an upper face of the III-N layer to a plasma treatment with bias voltage pulsing based on chlorine, wherein the plasma treatment is configured to present a duty cycle comprised between 20% and 80%. A first non-zero polarization bias is applied to the substrate during Ton, and a second polarization bias lesser than the first non-zero polarization bias or no polarization bias is applied, during Toff, so as to etch the portion of the III-N layer. The duration of the etching is significantly reduced to obtain a satisfying quality of the III-N layer for the operation of a microelectronic device, such as a transistor or a diode.

Abstract: The invention relates to a frequency-modulated, continuously transmitting radar measurement device including a generator configured to generate N first periodic radar signals, the frequency of each of said first periodic radar signals varies linearly as a function of time, in a frequency band B, over sections Tx of a part Ttrame of a period T, the frequencies of said first periodic radar signals being different from one another at each time instant of the part Ttrame; N transmit antennas; M receive antennas, each receive antenna being configured to receive a signal including echoes of the first periodic radar signals; a receive circuit configured to calculate, from the M signals, a range and/or a radial velocity and/or an angle, associated with a reflector detected by the radar measurement device.