Abstract: An assembly including at least one photovoltaic cell including a face on which a collecting grid is arranged, at least one interconnection strip attached to the face, and intended to electrically and mechanically connect the photovoltaic cell to another photovoltaic cell, and at least one line of adhesive, made of an electrically conductive material, disposed between the collecting grid and the interconnection strip, the line of adhesive being adapted to mechanically and electrically connect the interconnection strip to the photovoltaic cell, the line of adhesive extending substantially along a main longitudinal axis (X) and having a substantially constant width. The line of adhesive is disposed according to a zigzag pattern formed from a plurality of segments each forming an angle (?) less than or equal to 30° with the main longitudinal axis (X).

Abstract: The invention relates to a microelectronic device comprising a transistor (T1, T2) comprising at least two channels (41a, 41b, 41c) stacked along a main direction (z),. a first gate (G1) partially surrounding one of the channels (41a, 41b, 41c), a second gate (G2) partially surrounding said channel (41), a source (42) and a drain (43) either side of the channels (41a, 41b, 41c), and source and drain contacts (60S, 60, 60D) connected respectively to the source (42) and to the drain (43), a gate dielectric layer (70, 71, 72) separating each channel (41) of the gates-all-around (G1, G2). The first and second gates (G1, G2) are isolated from one another, such that they can be independently biased. The invention also relates to a method for producing such a device.

Abstract: The invention relates to a device comprising transistors (T1, T2, T3), each comprising: a channel (41) with the basis of a semiconductive material, a gate-all-around (50), totally surrounding said channel (41), a source (42) and a drain (43) on either side of the channel (41), and source and drain contacts (60S, 60, 60D), a gate dielectric layer (30) separating the channel (41) and the gate-all-around (50), spacers (70) on either side of the gate (50). Advantageously, the gate dielectric layer (30) and the spacers (70) are formed by at least one single and same continuous layer (73) surrounding the gate-all-around (50). The invention also relates to a method for producing such a device.

Abstract: The invention relates to a device comprising a transistor (T1, T2) comprising: a source (42) and a drain (43), a plurality of channels (41a, 41b, 41c) based on a semi-metallic material, a gate-all-around (50) surrounding the channels (41a, 41b, 41c), a gate dielectric layer (30) separating each channel (41a, 41b, 41c) and the gate-all-around (50), source and drain contacts (40S, 40D) based on the semi-metallic material, Advantageously, the gate-all-around (50) totally surrounds one or more of the channels (41a, 41b, 41c), according to a GAA architecture. The invention also relates to a method for producing such a device.

Abstract: A method for closing an orifice of a container. The method involves first providing a silicon carbide-based container comprising a cavity that is open by an orifice, of a silicon carbide-based plug and of a brazing material borne by the plug and/or the container. A solid object is housed in the cavity. Then the orifice is closed by brazing the plug onto the container. The brazing involves the melting the brazing material followed by solidification of the brazing material so as to form a solid joint between the container and the plug. At least a part of the cavity, referred to as a cold part, in which the solid object is housed, is kept at a temperature lower than the degradation temperature of the solid object during the brazing.

Abstract: A method for measuring the intensity of an external magnetic field by using a magnetic memory point including a storage layer having a magnetisation switchable between two magnetisation directions substantially perpendicular to the plane of the layer; a reference layer having a fixed magnetisation perpendicular to the plane of the layer; and a tunnel barrier layer separating the storage layer and the reference layer; the method including successively applying a plurality of currents or voltages of different amplitudes to the memory point until switching of the magnetisation direction of the storage layer takes place to determine a minimum switching current value of the magnetisation direction of the storage layer or a minimum switching voltage value of the magnetisation direction of the storage layer, and determining the intensity of the external magnetic field to be measured from the minimum switching current value or the minimum switching voltage value.

Abstract: A quantum device, includes a semiconductor portion comprising several first quantum dot regions each disposed between at least two second tunnel barrier regions and placed next to the two second regions; first gates each comprising a first conductive portion; and second gates each comprising at least a second conductive portion and a second dielectric disposed between the second conductive portion and the first conductive portion of one of the first gates, such that each of the first gates is disposed between the semi-conductor portion and one of the second gates. The first and second gates are disposed above the first regions or above the second regions, the second gates being solely located in a vertical extension of the first gates.

Abstract: This method comprises: selecting, depending on an address of a word to be read or written, a first cell in an indirection table and using, as first value generated for a line index, the value contained in this first cell, and in response to triggering of a cache miss: storing the word retrieved from a memory of higher rank in a new line identified by a second line-index value, this second value being contained in a second cell of the indirection table, and permutating, in the indirection table, only values contained in the first and second cells, so that after this permutation the first cell contains the second value and the second cell contains the first value.

Abstract: An optomechanical system for transducing an optical intensity modulation movement including an optical detector and a mechanical sensor including a mobile mass, of which a receiving surface is intended to receive an external mechanical urging, and an excitation device. The excitation device is configured to vibrate the mobile mass along an excitation direction at at least one of its resonance frequencies. The vibration of the mobile mass is disrupted by the external mechanical urging, and modifies an evanescent field of the optical detector. The mobile mass has an interaction region facing the optical detector, as well as a second region, respectively having, projecting along a plane perpendicular to the excitation direction, an interaction surface area S111 and a second surface area S112, with S112<S111.

Abstract: An optomechanical system for transducing an optical phase shift movement including a mechanical sensor including a sensor element, the sensor element having an upper face extending mainly into a plane called longitudinal plane, when the system is at rest, the mechanical sensor being intended to receive an acoustic wave to vibrate the sensor element at a vibration frequency. The system moreover includes an optical detector capable of guiding a light radiation substantially parallel to the longitudinal plane, the optical detector having an evanescent field. The vibration of the sensor element modifies the evanescent field of the optical detector and the sensor element is moved along a direction called transverse direction, substantially perpendicular to the longitudinal plane when it vibrates.

Abstract: Computing system comprising a memory A, a memory access control module, and a parallel processing processor comprising a plurality of computing units each comprising a memory B shared by one or more elementary processors. The computing units are arranged in columns. A partition of the memory A is associated with each column. Connection modules are connected respectively to the partitions of the memory A and to the memories B of the computing units. Within a column, the neighboring connection modules are connected to one another by a dedicated interface link. The memory access control module is adapted to configure the connection modules to execute parallel data transfers in a plurality of columns, each transfer making it possible to exchange data within a column between a partition of the memory A and a memory B of at least one computing unit.

Abstract: A method and device for monitoring the weakening of an interface between a layer and a substrate while a weakening anneal is being carried out. The method includes illuminating the first face of the substrate layer assembly with a monochromatic light beam in a first direction; measuring the intensity of the light beam scattered by the substrate layer assembly in at least a second direction, the second direction forming a non-zero angle with the first direction; and determining a state of weakening of the interface from the intensity.

Abstract: The invention is based on a thermo-optic phase modulator comprising, in a stack, a waveguide, an encapsulation layer and a heating element configured to heat the waveguide, said modulator being bordered by first and second trenches. Advantageously, the waveguide, the encapsulation layer and the heating element, each have first and second flanks forming at least partially the flanks of the trenches. The flanks of the waveguide, of the encapsulation layer and of the heating layer thus open directly into the trenches bordering the modulator. The invention is also based on a method for producing such a compact modulator.

Abstract: The present description relates to a method of manufacturing an electronic device comprising a phase-change memory cell, the method comprising: the forming of a first layer made of a resistive material; the forming of a stack of layers on the first layer, the stack comprising at least one second layer made of a phase-change material; the etching of the stack, said etching stopping when the first layer is reached around the location of the memory cell; the forming of a spacer on the side walls of the stack; then an etching of the first layer, so that the stack rests on a central portion of the first layer and that the spacer rests on a peripheral portion of the first layer.

Abstract: A multichannel transmitter device includes, on each channel: a transmission processing channel designed to process an input signal and comprising a predistortion block applying a predistortion to the input signal on the basis of predistortion coefficients, a DAC, a first analogue filter, a power amplifier and a sigma-delta encoder between the predistortion block and the digital-to-analogue converter and designed to carry out notably a quantization of the predistortion block; a return channel associated with the transmission processing channel and comprising a block for estimating predistortion coefficients so as to estimate predistortion coefficients on the basis of the input signal and of a feedback signal; the transmitter device wherein the block for estimating predistortion coefficients is designed to estimate the predistortion coefficients on the basis of at least the input signal and of a signal resulting from the subtraction, from the feedback signal, of a signal representing the quantization noise resu

Abstract: Disclosed is a method for the temperature control of an electrochemical system comprising a stack of electrochemical cells and interconnection plates interposed between the electrochemical cells, means for supplying gas to the electrochemical cells and means for collecting gases produced by the electrochemical cells, and means for electrically connecting the system to the outside, wherein the electrochemical device also comprises heating means integrated into the stack, said heating means comprising at least a first and a second heating element, the first heating element being disposed in a first location in the stack and the second heating element being arranged in a second location in the stack, said method comprising steps of: applying a first control command to the first heating element and a second control command to the second heating element, said control commands being configured such that a thermal gradient in the stack in the direction of the stack is maintained substantially at a defined value.

Abstract: An electrical device for generating a test pulse, includes at least one voltage generator configured for generating an input voltage pulse in a first phase; for each generator, a coil transformer for amplifying the input voltage pulse; a rectifier diode; a target circuit comprising at least one target complex impedance and a capacitive element, the target circuit having a first electrode connected to the cathode of the rectifier diode and a second electrode; a trigger circuit configured for triggering a second phase by discharging the capacitive element through the target circuit so as to apply the test pulse to the target complex impedance.

Abstract: A thermal detector includes a readout substrate, including a readout circuit; and an absorbent membrane suspended above the readout substrate and thermally isolated therefrom, and including a thermometer transducer electrically connected to the readout circuit. The thermometer transducer is formed by a plurality of thermometer diodes connected in parallel and the readout circuit is adapted to activate the thermometer diodes selectively. The thermometer diodes and the readout circuit are configured so as to have at least the following two electrical configurations: a first configuration where a total electrical current Id circulating in the thermometer transducer has a first value Id,1; and a second configuration where the total electrical current Id has a second value Id,2 different from Id,1.

Abstract: The invention relates to a method for manufacturing a thermoelectric device equipped with a heat sink, comprising the following steps: A) making (100) a first portion of said thermoelectric device, said first portion being equipped with a heat sink, step A) during which a first series of studs made of a semiconductor material with a given type of doping is deposited by additive manufacturing; B) producing (200) a second portion of the thermoelectric device, step B) during which a second series of studs made of a semiconductor material with another type of doping is deposited by additive manufacturing; C) assembling (300) the second portion of the device to the first portion.

Abstract: A system for measuring a flow rate of a fluid containing liquid includes a body in which the fluid flows, at least one rotor configured to be rotated by the fluid, and a device for measuring a rotation speed of the rotor. The measuring device includes an optical module configured to transmit an incident light radiation on vanes of the rotor, in a direction substantially perpendicular to an axis of rotation of the rotor and receive a reflected light radiation coming from the vanes. The measuring device further includes a conversion module configured to determine the rotation speed of the rotor according to the reflected light radiation and determine the flow rate of the fluid.