Abstract: The invention relates to a method for manufacturing an optoelectronic device (1) including an array of diodes (D1, D2, D3) and an array of colour conversion portions (P1, P2), including the following steps: providing the array of diodes (D1, D2, D3), and the upper electrode layers (E1, E2, E3); depositing a dielectric layer (26) having a substantially zero surface potential; applying a potential difference between an electrode (2) and the first upper electrode layers (E1), resulting in the formation of first patterns (M1) with non-zero surface potential in the dielectric layer (26); producing the first colour conversion portions (P1), by contacting the dielectric layer (26) with a colloidal solution (S1) containing first photoluminescent particles (p1).

Abstract: The invention relates to a frequency-modulated, continuously transmitting radar measurement device including a generator configured to generate N first periodic radar signals, the frequency of each of said first periodic radar signals varies linearly as a function of time, in a frequency band B, over sections Tx of a part Ttrame of a period T, the frequencies of said first periodic radar signals being different from one another at each time instant of the part Ttrame; N transmit antennas; M receive antennas, each receive antenna being configured to receive a signal including echoes of the first periodic radar signals; a receive circuit configured to calculate, from the M signals, a range and/or a radial velocity and/or an angle, associated with a reflector detected by the radar measurement device.

Abstract: A method for etching at least a portion of a layer based on a III-N material includes exposing a least one portion of an upper face of the III-N layer to a plasma treatment with bias voltage pulsing based on chlorine, wherein the plasma treatment is configured to present a duty cycle comprised between 20% and 80%. A first non-zero polarization bias is applied to the substrate during Ton, and a second polarization bias lesser than the first non-zero polarization bias or no polarization bias is applied, during Toff, so as to etch the portion of the III-N layer. The duration of the etching is significantly reduced to obtain a satisfying quality of the III-N layer for the operation of a microelectronic device, such as a transistor or a diode.

Abstract: A laser includes a distributed Bragg mirror and is configured to emit monochromatic light radiation along a longitudinal direction. The laser has layers, stacked along a first transverse direction normal to the longitudinal direction and made of III-V materials, including an active region configured to emit the radiation. The mirror is formed by periodic lateral corrugations which extend mainly along the longitudinal direction and having a dimension along a second transverse direction normal to the longitudinal direction. The lateral corrugations of the Bragg mirror extend from a top surface of the waveguide pattern along the first transverse direction on a height strictly less than the depth, at which the active region is located starting from the top surface, such that a portion of lateral flanks of the waveguide is free of any lateral corrugations at the active region.

Abstract: A potentiometric oxygen sensor for measuring an oxygen concentration of a liquid metal, which includes a metal tube forming at least one sensor body part, an electrochemical subassembly, and an insert made of a transition metal from group 4 of the Periodic Table or its alloy. The electrochemical subassembly contains an electrolyte, intended to be in contact with the liquid metal, and a reference electrode contained in the electrolyte, the electrolyte being made of yttrium-doped or calcium-doped hafnia (HfO2), or of thoria (ThO2), which is optionally yttrium-doped or calcium-doped, or of yttrium-doped or calcium-doped zirconia (ZrO2). The reference electrode contains at least one metal and its oxide form at the operating temperature of the potentiometric oxygen sensor. The insert is arranged between the sensor body part and the electrolyte, and is attached to the sensor body part and brazed onto the electrolyte by a brazing joint.

Abstract: Methods and devices are provided for analyzing a tubular structure including at least two electromagnetic-acoustic transducers (EMAT) and, called sensors, attachable or attached in, on or in the vicinity of the tubular structure; and computation and/or memory resources, that are accessed locally and/or remotely and that are configured to determine, for the pair of sensors, a function representing the impulse response of the tubular structure on the basis of the diffuse acousto-elastic noise present in the structure. Developments describe the use of rings supporting the sensors; translation and/or rotation movements; permanent or temporary installations; hinged rings; various computation modes, e.g., intercorrelation, a passive inverse filter, or correlation of the coda of the correlation; the use of artificial noise sources, imaging (e.g., tomography) for determining the existence of one or more defects in the structure. Software aspects are described.

Abstract: A HEMT GaN transistor with a conductive gate including an upper metal region, and a lower semi-conductor region provided to lower current gate leakage. The lower semiconductor region is formed of: a first sub-region that is P-doped and in contact with the metal region, a second sub-region that is P-doped and in contact with the second layer, and an intermediate sub-region arranged between the first sub-region and the second sub-region, the third sub-region being un-doped or unintentionally doped or doped with a low concentration of dopant compared to that of the first sub-region and second sub-region, respectively.

Abstract: The invention is based on a method for processing an X-ray and gamma-ray radiation spectrum acquired by a spectrometry device (1). The processing method takes into consideration a spectral dispersion matrix (D). The spectral dispersion matrix models the energy response of the device. The method comprises establishing a transfer matrix (U,U?,D?), using the spectral dispersion matrix. The transfer matrix is then used to establish a direct model, linking measured variables, forming an input vector (m), and variables to be estimated, forming an output vector. The invention of the direct model allows the output vector (a,s,h,?) to be estimated. The invention may be applied to quantifying the activity of an object to be inspected or to performing an energy or efficiency calibration of the spectrometry device. FIG. 2B.

Abstract: An assembly includes a stack of SOEC/SOFC solid oxide cells, the stack having a plurality of plates stacked one on top of the other, each plate having an outer lateral surface, the plurality of plates including at least a plurality of electrochemical cells, a plurality of interconnectors, and upper and lower end plates. At least two guiding elements are configured to guide the vertical stacking of at least some of the plates of the stack. The at least two guiding elements extend vertically in a vertical direction and bear against the outer lateral surface of each of the at least some of the plates.

Abstract: A method for manufacturing a porous monolith includes: forming a sol including a sol-gel precursor in aqueous solution; at least partially filling with previously formed sol an enclosure and at least one mould contained in the enclosure, the mould including at least one opening into the sol after filling; forming a sol-gel matrix in the enclosure from the sol; removing the mould with the sol-gel matrix contained in the mould from the enclosure; and forming a porous monolith from the sol-gel matrix contained in the mould, wherein the formation of the sol, the sol-gel matrix, and the porous monolith is performed by a sol-gel process.

Abstract: A stack of SOEC/SOFC solid oxide cells includes a plurality of stacked plates and two guiding elements ensuring that the vertical stacking of at least some of the plates is guided, each plate having two guiding orifices. In a cross-sectional view, the guiding orifices are aligned in a first horizontal direction and are spaced apart by a smaller inter-orifice distance, the guiding elements being spaced apart by a greater smaller inter-element distance and the difference corresponding to the identical inner clearance for the two guiding orifices. The guiding orifices are spaced apart by a larger inter-orifice distance and the guiding elements are spaced apart by a shorter larger inter-element distance, the difference corresponding to the outer clearance, which is greater than the inner clearance.

Abstract: A method for obtaining and processing an image acquired by a gamma camera, the gamma camera comprising a detector configured to detect X-ray or gamma-ray photons emitted in a field of observation of the gamma camera, in order to obtain a reconstructed image. The reconstructed image corresponds to a position of radiation sources in the field of observation, the reconstructed image being liable to contain multiple regions of interest corresponding to hotspots. The method comprises selecting a region of interest so as to determine a probability of the hotspot being present in the selected region of interest.

Abstract: The invention is a method for processing a calibration spectrum acquired by a spectrometric detector of X or gamma photons. The method comprises a taking into account of a parametric form of a calibration function, the calibration function linking the rank of an energy channel to an energy value. The method comprises a confrontation between the channels of the peaks of the calibration spectrum and emission energies of calibration isotopes. The confrontation makes it possible to define the values of the parameters of the calibration function.

Abstract: A method for manufacturing a mould for nanoprinting and the associated mould, includes providing a substrate having a layer, and at least one ion implantation configured so as to obtain in the layer, at least one first non-implanted portion or portion having a first implantation, at least one second portion having a second implantation, and a third non-implanted portion distinct from the first portion. After implantation, the method includes etching the layer configured so as to have a different etching speed between at least the second portion and the third portion, so as to etch through the openings of an etching mask, a plurality of patterns of different heights being included in the layer.

Abstract: A wireless electronic detonator includes a primary source of energy and at least one functional module. A power switch is disposed between the primary source of energy and the functional module to connect or disconnect the functional module and the primary source of energy. A controller controls the power switch and includes an optical receiver to detect and demodulate a light signal emitted by a control console, The controller generates a control signal according to the demodulated light signal to at least control the power switch. A wireless detonation system includes the wireless electronic detonator and the control console configured to emit a light signal, and method for activating the wireless electronic detonator.

Abstract: A method for sealing cavities using membranes, the method including a) forming cavities arranged in a matrix, of a depth p, a characteristic dimension a, and spaced apart by a spacing b; and b) forming membranes, sealing the cavities, by transferring a sealing film. The method further includes a step a1), executed before step b), of forming a first contour on the front face and/or on the sealing face, the first contour comprising a first trench having a width L and a first depth p1, the formation of the first contour being executed such that after step b) the cavities are circumscribed by the first contour, said first contour being at a distance G from the cavities between one-fifth of b and five b.

Abstract: A device with stacked transistors includes a first transistor of a first type, in particular N or P, the first transistor having a channel formed in one or more first semi-conducting rods of a semi-conducting structure including semi-conducting rods disposed above each other and aligned with each other, and a second transistor of a second type, in particular P or N, with a gate-surrounding gate and a channel region formed in one or more second semi-conducting rods of said semi-conducting structure and disposed above the first semi-conducting rods. The source block of the second transistor is distinct from the source and drain block of the second transistor, and the drain block of the second transistor is distinct from the drain and source blocks of the second transistor.

Abstract: A method for measuring relative concentrations of materials in a mixture includes providing an emission coil and at least one reception coil, providing a mixture with n materials having different magnetic susceptibilities, and introducing the mixture into the reception coil. Using a voltage generator the emission coil is supplied with at least one nonzero excitation frequency so as to generate an excitation magnetic field and the signal of the voltage induced in the reception coil is measured. Relative concentrations of the n materials are determined based on comparison between the overall susceptibility of the mixture as obtained through the voltage measurement and that of a reference mixture for which the relative concentrations of the n materials are known.

Abstract: A unit cell of a fuel cell may include: a membrane-electrode assembly including a proton exchange membrane, an anode electrode fastened to a first face of the proton exchange membrane, a first flow guide plate positioned facing the anode electrode and including at least one flow channel having a fuel inlet zone, a median flow zone and a fuel outlet zone. The anode electrode may have, at the fuel outlet zone, a tolerance to carbon monoxide pollution greater than its average tolerance to carbon monoxide pollution at the median flow zone and at the fuel inlet zone.

Abstract: An integrated optical component, including a transparent pad arranged on the upper face of the basic optical component, the transparent pad including a plane mirror at its upper face, and the basic optical component including a convergent mirror at its upper face, the plane and convergent mirrors being arranged such that the light beam is propagated between the internal light gate and the external light gate by passing through the transparent pad by reflection on the plane mirror and by reflection on the convergent mirror.