Abstract: A device includes gate-all-around transistors and method for manufacturing such a device. A method for manufacturing a microelectronic device includes at least two transistors each comprising a channel in the shape of a wire extending in a first direction x, a gate surrounding said channel, a source and a drain, said transistors being stacked in a third direction z and each occupying a level nz (z=1 . . . 4) of given altitude in the third direction z.

Abstract: An electrochemical device may be formed by assembly by stacking preassembled modules, each of these modules being produced as a usual stack of electrochemical cells. The manufacture of preassembled modules can make it possible to produce electrochemical devices with a large number of electrochemical cells, without the bracing problems present and excessive crushing courses that are encountered in the cell stacks according to the prior art, i.e., in a single block.

Abstract: A microelectronic device includes a field-effect n-MOS transistor, a first N-doped zone, constituting one from among the drain and the source of the n-MOS transistor and a second N-doped zone, constituting the other from among the drain and the source of the n-MOS transistor. The device further includes a field-effect p-MOS transistor, a first P-doped zone, constituting one from among the drain and the source of the p-MOS transistor, a dielectric layer in contact with the doped zones and a rear gate. The n-MOS transistor and the p-MOS transistor are separated by a PN junction.

Abstract: The invention relates to a method for operating in hot stand-by mode a fuel cell (SOFC) or a high-temperature electrolysis or co-electrolysis reactor (1), with a stack of solid oxide elementary electrochemical cells (SOEC), the method comprising, during a given period of absence of an electric current respectively flowing out of or applied to the stack or when it is sought to raise or lower the temperature of the cell or reactor, a step of supplying compartments on the side of the hydrogen/water electrodes (H2/H2O) with pulses of a safety gas at regular time intervals during the given period, or when the cell voltage drops below a threshold value, so as to renew the gas(es) present in said compartments.

Abstract: The invention relates to a lensless imaging device, comprising an emitting part comprising a light source (1) configured to emit a light beam in a direction of emission and intended to follow an optical path, a receiving part incorporating an electronic circuit board (3) bearing a sensor (2) having a planar capture surface (20) intended to receive said light beam in a direction normal to said capture surface, said optical path being subdivided into several successive optical sections, each optical section corresponding to a distinct direction of propagation of the light beam.

Abstract: A Resistive random access memory (ReRAM) comprising: an array (M1) of cells (Cij) each connected to a first supply line (SL) set at a first supply potential, each cell being provided with a resistive element (1, 2) and a selection transistor (Ms1, Ms2), a read circuit (400) associated with a given row of cells and comprising a sense amplifier (440) of the latch type connected to a second supply line (45) set at a second supply potential, the device further comprising: a circuit for controlling read operations configured to during a reading: apply to said first bit line (BL0) a potential equal to said first supply potential (GND, VDD) while isolating the first bit line (BL0) from said sense amplifier (440), then, couple the first bit line (BL0) to said sense amplifier (440).

Abstract: A method for collective bending of microelectronic components, including affixing an initial structure including a temporary handle and a plurality of microelectronic components, onto a shaping support, then removing the temporary handle, and bending the microelectronic components so that they are curved and adhere, by an adhesive layer, to the bent surfaces of the shaping support.

Abstract: The present description concerns a switch based on a phase-change material comprising: a region of the phase-change material; a heating element electrically insulated from the region of the phase-change material; and one or a plurality of pillars extending in the region of the phase-change material, the pillar(s) being made of a material having a thermal conductivity greater than that of the phase-change material.

Abstract: The present description concerns a switch based on a phase-change material comprising: a region of the phase-change material; a heating element electrically insulated from the region of the phase-change material; and one or a plurality of pillars extending in the region of the phase-change material, the pillar(s) being made of a material having a thermal conductivity greater than that of the phase-change material.

Abstract: An optoelectronic device includes a substrate, at least one active layer, formed on the substrate, and made of a material; defects, present in the material, and possessing an energy structure defining: a ground state in the valence band, including first and second spin states, a metastable state in the band gap, an excited state in the conduction band; a device for causing excitation of the active layer, which are configured to: make electrons transition to the excited state, then relax to the second spin state via the metastable state, so that the active layer may emit photons that make electrons transition from the second spin state to the first spin state; or make electrons transition from the second spin state to the excited state, so that the active layer may detect photons that make electrons transition from the first spin state to the second spin state by absorption.

Abstract: The present description concerns a switch based on a phase-change material comprising: a region of the phase-change material; a heating element electrically insulated from the region of the phase-change material; and one or a plurality of pillars extending in the region of the phase-change material, the pillar(s) being made of a material having a thermal conductivity greater than that of the phase-change material.

Abstract: A system provided with a microelectronic device includes a substrate exposed on a face of the device, the substrate having at least one electrically conductive element, and an electrical connection member in electrical continuity with the element and including at least one rod projecting over the face of the device, wherein the connection member includes an inorganic anchoring portion covering the element and in that the rod comprises a portion buried in the anchoring portion followed by a portion projecting over the face of the device.

Abstract: An electronic device includes a substrate; a porous semiconductor material layer arranged on the substrate; a first high magnetic permeability material arranged inside the pores of a first portion of the porous semiconductor layer, the first portion of the porous semiconductor material layer impregnated with the first high magnetic permeability material forming a first magnetic layer separated from the substrate by a second portion of the porous semiconductor material layer; and a coil arranged on the first magnetic layer.

Abstract: A method for interconnecting components of an electronic system includes depositing a sintering solution onto a first component to form an interconnection layer, the sintering solution comprising a solvent, metal nanoparticles dispersed in the solvent, and a stabilizing agent adsorbed onto the nanoparticles. More than 95.0%, preferably more than 99.0% of the mass of the nanoparticles include a metal selected from silver, gold, copper and alloys thereof and have a polyhedral shape with an aspect ratio greater than 0.8. The method also includes eliminating, at least partially, the solvent from the layer to form an ordered agglomerate in which the nanoparticles are regularly disposed in three axes, the stabilizing agent binding them together and maintaining at least a portion of the nanoparticles at a distance from each other, debinding and sintering the layer, and depositing a second component in contact with the layer before or during debinding or sintering.

Abstract: The invention concerns a method for processing energy spectra of radiation transmitted by an object irradiated by an ionising radiation source, in particular X-ray radiation, for medical imaging or non-destructive testing applications. The method uses a detector comprising a plurality of pixels, each pixel being capable of acquiring a spectrum of the radiation transmitted by the object. The method makes it possible, based on a plurality of detected spectra, to estimate a spectrum, referred to as the scattering spectrum, representative of radiation scattered by the object. The estimation involves taking into account a spatial model of the scattering spectrum. Each acquired spectrum is corrected taking into account the estimated scattering spectrum. The invention makes it possible to reduce the influence of the scattering, by the object, of the spectrum emitted by the source.

Abstract: A lower limb (1) of an ambulatory exoskeleton comprising at least a pelvis segment (10). a leg segment (20) and a foot segment (30), the leg segment (20) being hinged at the First end (21) of same to the pelvis segment (10) and at the second end (24) of same to the foot segment (30). the leg segment (20) comprising a spring element (25) and means (40. 44) for varying the distance (d) separating the ends (21. 24) of the leg segment (20), the means (40. 44) for varying the distance (d) separating the ends (21. 24) of the leg segment (20) being carried by the pelvis segment (10).

Abstract: A device for the photoacoustic characterisation of a gaseous substance, includes a chamber intended to contain the gaseous substance to characterise and into which a light beam is injected. The chamber is delimited, inter alia, by an inner face, on which a part of the light beam is reflected. This inner face is etched so as to have recesses, each recess being delimited laterally by a lateral surface of which a part at least is tilted, with respect to an average plane of the inner face, by a given tilt angle (?).

Abstract: Fluid transfer membrane (84) including a porous wall (82) of n-doped silicon including pores (54) extending entirely across its thickness, each pore having a diameter of less than or equal to 400 nm and an aspect ratio of greater than or equal to 20.

Abstract: The present invention relates to a biosensor comprising a plurality of functionalized sets of carbon atoms in the sp2 hybridisation state, its method of preparation and its use, in particular for the detection of ecotoxicological risks, in particular the determination of the toxicity of substances present in an aqueous medium, as well as to the corresponding determination method.

Abstract: A method is provided for characterizing a part. The method includes a) carrying out non-destructive measurements using a sensor, the sensor being placed on the part or facing the part; b) using the measurements as input data of a neural network; and c) depending on the value of each node of the output layer of the neural network, characterizing the part. The method further includes prior to steps b) and c): constructing a first database, on a first model part; employing a first neural network parametrized by a first training operation, using the first database; constructing a second database, containing experimental measurements of the physical quantity performed on the part to be characterized; a second training operation, using the second database, so as to parametrize a second neural network, using the parametrization of the first neural network. In step c), the neural network used is the second neural network.