Abstract: A MicroElectroMechanical System is provided, with an active element configured to carry out an electromechanical function, the active element including, from an upper face to a lower face substantially parallel to the upper face, an active layer, a core layer, and a retention layer, the active layer being configured to, under the effect of a first electric signal, go into a mechanically stressed state, configured to generate a bending of the active element in a direction perpendicular to a front face thereof, and vice versa, the active layer, the core layer, and the retention layer being arranged so that a neutral axis, associated with an elongation of zero in a case of bending of the active element, is located in a volume of one or the other of the core layer and of the retention layer, and the core layer further includes at least 20% recesses in its volume.

Abstract: An assembly including a first waveguide produced in a first photonic chip and that extends in a first direction in order to guide an optical signal at a wavelength ?, an array of a plurality of second waveguides, which is produced in a second photonic chip adjoined to the first photonic chip, and a power summer including inputs that are optically connected to one end of each of the second waveguides. Each of the second waveguides includes upstream and downstream segments that are offset with respect to each other in the second direction. The configurations of the first waveguide and of the second waveguides are such that, for any position of the first waveguide above the array, the distance between one of the segments of the first waveguide and one of the segments of one of the second waveguides is smaller than ?/2.

Abstract: A process for producing a piezoelectric sensor includes the following steps: a step of providing a housing made of stainless steel; a step of producing a solution of a compound comprising a metal or metalloid element; a step of depositing a layer of the solution over at least one inner surface of the housing; a step of oxidizing the deposited layer of solution; a step of placing a piezoelectric element inside the housing; a step of closing the housing. A piezoelectric sensor obtained by such a process and comprising a closed steel housing, a piezoelectric element arranged inside the housing and a layer of a solution of a compound comprising a metal or metalloid element that is arranged over at least one inner surface of the housing.

Abstract: A converter includes a coil of axis XX?, a multi-pole magnet, arranged in such a way that the magnetic polarities of two adjacent magnetised zones are oriented so that they are anti-parallel, a ferromagnetic field frame comprising a frame and a main section, the field frame further comprising a main air gap located on the main section, and a first lateral air gap and a second lateral air gap which are located on the frame, the main air gap, the first lateral air gap and the second lateral air gap being arranged in such a way as to form a guide member in which the multi-pole magnet is inserted by sliding, and in such a way as to allow a magnetic coupling of three successive magnetised zones with, respectively, the first lateral air gap, the main air gap, and the second lateral air gap.

Abstract: An inertial sensor including a substrate, a first pair of proof masses sensitive to rotation movements occurring around a first direction and a third direction, a second pair of proof masses sensitive to rotation movements occurring around a second direction and the third direction, an excitation device, four frames, a rotatable frame and a sensing system connected to the rotatable frame. This inertial sensor is characterized in that the excitation device is configured to force the first pair of proof masses and the second pair of proof masses into a motion going towards and away from the sensing system, and wherein the readout of the rotation movements occurring in each of the three directions is achieved with piezoelectric gauges.

Abstract: A sensor may include a prism having a first face; a metal first layer covering, via a contact face, the first face; a light source; and a matrix-array detector; the device may include a dielectric second layer on which rests a transistor including a sheet made of a two-dimensional material, intended to form a channel region, a front face of the sheet comprising a specific functionalization via which specific targets are liable to be adsorbed, the specific functionalization being suitable for placing the adsorbed specific targets at a smaller distance Dd below which detection via electrical measurement by means of the specific transistor and via measurement of resonance of surface plasmons is possible.

Abstract: An imaging pixel formed by a photodetector connected to a reading circuit comprising: an integration capacitance, a transistor for resetting the integration capacitance, a coupling transistor between the photodetector and the integration capacitance, a memorisation capacitance, a second transistor for resetting the memorisation capacitance, a memorisation switch between the integration capacitance and the memorisation capacitance, to enable different configurations corresponding to different phases of assessing parameters of the pixel and in particular a ratio R=Cint/Cmem.

Abstract: A unit cell of a fuel cell may include: a membrane-electrode assembly including a proton exchange membrane, an anode electrode fastened to a first face of the proton exchange membrane, a first flow guide plate positioned facing the anode electrode and including at least one flow channel having a fuel inlet zone, a median flow zone and a fuel outlet zone. The anode electrode may have, at the fuel outlet zone, a tolerance to carbon monoxide pollution greater than its average tolerance to carbon monoxide pollution at the median flow zone and at the fuel inlet zone.

Abstract: A peptide may include a sequence having 80% or more amino acid identity with the amino acid sequence of SEQ ID NO. 1, i.e., RPSX1CNLPVKPGPCX2GFFSAFYYSQKX3NKCHSFTYGGCAGNANRFSTX4EKCRRTC X5X6, wherein, X1 is the amino acid residue F or G, X2 is any amino acid residue, except a basic amino acid residue, X3 is the amino acid residue T or D, X4 is the amino acid residue I, L, or E, (i) X5 is V and X6 is G or (ii) X5 is G and X6 is V, and the amino acid located at position 39 is A. Such peptides may have various diagnostic and therapeutic uses.

Abstract: A filament type non-volatile memory device, includes a first electrode, a second electrode and an active layer extending between the first electrode and the second electrode, the active layer electrically interconnecting the first electrode to the second electrode, the device being suitable for having: a low resistive state, in which a conducting filament electrically interconnecting the first electrode to the second electrode uninterruptedly extends from end to end through the active layer, the filament having a low electric resistance, and a highly resistive state, in which the filament is broken, the filament having a high electric resistance. The device further includes a shunt resistance electrically connected in parallel to the active layer, between the first electrode and the second electrode.

Abstract: An aspect of the invention relates to an elementary cell that includes a breakdown layer made of dielectric having a thickness that depends on a breakdown voltage, a device and a non-volatile resistive memory mounted in series, the device including an upper selector electrode, a lower selector electrode, a layer made in a first active material, referred to as active selector layer, the device being intended to form a volatile selector; the memory including an upper memory electrode, a lower memory electrode, a layer made in at least one second active material, referred to as active memory layer.

Abstract: A Bragg grating optical fiber sensor for measuring temperatures and deformations and a method for manufacturing same, the manufacturing method including ablating a mechanical coating over a portion of an optical fiber so as to form an opening extending radially over the entire thickness of the mechanical coating, and inscribing a Bragg grating into the optical fiber through the opening.

Abstract: A method for determining a physical model of an energy installation from a plurality of components linked together according to one or more constraints to form a tree, called tree of constraints, each component including one or more output ports, each output port being associated with a physical quantity of which the value depends on one or more variables internal to the component and/or on one or more variables external to the component, each external variable being communicated to the component through an input port. A second aspect relates to a method for controlling an electrical installation including a first phase of determining a physical model of the installation using the described method; and a second control phase during which each set point is determined as a function of a simulation carried out using the physical model obtained during the phase of determining a physical model of the energy installation.

Abstract: An organic Rankine cycle machine and a supplementary reservoir of water, distinct from the pool, the energy stored in the pool being the hot source for the organic Rankine cycle evaporator, the supplementary reservoir of water feeding the organic Rankine cycle condenser directly via a dedicated pump to constitute the cold source of the organic Rankine cycle condenser.

Abstract: An ORC engine and an additional water reservoir, separate from the pool, the energy stored in the pool being the heat source for the evaporator of the ORC, the additional water reservoir directly supplying the condenser of the ORC via a dedicated pump in order to constitute the heat sink for the condenser of the ORC.

Abstract: A test structure for a buried gate transistor includes a substrate, a first test contact located on one side of a first transistor contact, a second test contact located on one side of a second transistor contact, and a layer buried in the substrate, having a doping greater than or equal to 1018 cm?3, and having a face which is tangent to the buried part of the gate. A first insulation structure is disposed between the first test contact and the first transistor contact and a second insulation structure is disposed between the second test contact and the second transistor contact. The first and second test contacts each have an end connected to the buried layer.

Abstract: A light-emitting diode may include: a first n-doped semiconductor portion; a second p-doped semiconductor portion; an active zone disposed between the first and second portions and including at least one emitting semiconductor portion; a layer that is electrically conductive and optically transparent to at least one wavelength of the UV range configured to be emitted from the emitting portion, the layer being such that the second portion is disposed between the layer and the active zone. The semiconductors of the first portion and of the emitting portion may include compounds including nitrogen atoms as well as atoms of aluminum and/or of gallium. The semiconductor of the second portion may include AlX2Ga(1-X2-Y2)InY2N that is p-doped with magnesium atoms, wherein X2>0, Y2>0, and X2+Y2<1, and in which the atomic concentration of magnesium is greater than 1017 at/cm3. The electrically conductive layer may include doped diamond.

Abstract: A phase change resistive memory includes an upper electrode; a lower electrode; a layer made of an active material, called an active layer; the memory passing from a highly resistive state to a weakly resistive state by application of a voltage or a current between the upper electrode and the lower electrode and wherein the material of the active layer is a ternary composed of germanium Ge, tellurium Te and antimony Sb, the ternary including between 60 and 66% of antimony Sb.

Abstract: An execution method includes supplying of a machine code, the machine code being formed by a succession of base blocks and each base block being associated with a signature and comprising instructions to be protected. Each instruction to be protected is immediately preceded or followed by an instruction for constructing the value of the signature associated with the base block. Each construction instruction is coded on strictly less than N bits, and each word of the machine code which comprises at least one portion of one of said instructions to be protected also comprises one of the construction instructions so that A is not possible to load an instruction to be protected into an execution file, without at the same time loading a construction instruction which modifies the value of the signature associated with the base block when it is executed.

Abstract: Method for offloading calculation tasks between a user terminal and an edge host device in a communication network according to a multi-access edge computing technique, including steps of: Offloading data necessary for the execution of the calculation from the user terminal to the edge host device, and Transmitting data resulting from the calculation carried out by the edge host device, from the edge host device to the user terminal, wherein the offloading of data is controlled on the basis of joint criteria of energy efficiency and of minimization of exposure of a user of the user terminal to electromagnetic fields.