Abstract: A method of manufacturing an optoelectronic device, including: a) transferring, onto a surface of a control circuit, a diode stack including first and second semiconductor layers of opposite conductivity types, so that the second layer is electrically connected to metal pads of the control circuit; b) forming in the active stack trenches delimiting a plurality of diodes connected to separate metal pads of the control circuit; c) depositing an insulating layer on the lateral walls of the trenches; d) partially removing the insulating layer to expose the sides of the portions of the first layer delimited by the trenches; and e) forming a metallization coating the lateral walls and the bottom of the trenches and contacting the sides of the portions of the first layer delimited by the trenches.

Abstract: A battery including: a power supply bus; an assembly of electric cells and of first switches coupling the cells; second switches forming an H bridge and coupling said assembly to nodes; a first circuit for supplying first control signals to the first and second switches; a second circuit for delivering a first power supply voltage to the first circuit based on the voltage across one of the cells; a third circuit for supplying second control signals to at least two of the second switches and connected to the power supply bus; and first diodes coupling the first circuit to the two second switches and second diodes coupling the third circuit to the two second switches.

Abstract: A method of forming an area of electric contact with a semiconductor region mainly made of germanium, comprising the forming of a first area made of a first intermetallic material where more than 70% of the non-metal atoms are silicon atoms. There is also described a device including such a contacting area.

Abstract: A method of manufacturing an electronic device, including: a) forming a plurality of chips, each including a plurality of connection areas and at least one first pad; b) forming a transfer substrate including, for each chip, a plurality of connection areas and at least one second pad, one of the first and second pads being a permanent magnet and the other one of the first and second pads being either a permanent magnet or made of a ferromagnetic material; and c) affixing the chips to the transfer substrate to connect the connection areas of the chips to the connection areas of the transfer substrate, by using the magnetic force between the pads to align the connection areas of the chips with the corresponding connection areas of the transfer substrate.

Abstract: A radiation sensor including a plurality of pixels formed in and on a semiconductor substrate, each pixel including a microboard suspended above the substrate by thermal insulation arms, the microboard including: a conversion element for converting incident electromagnetic radiation into thermal energy; and a passive optical shutter including a heat-sensitive layer covering one of the faces of the conversion element, the heat-sensitive layer having a reflection coefficient for the radiation to be detected that increases as a function of its temperature.

Abstract: A memory circuit including: a plurality of elementary storage cells arranged in an array of rows and of columns; a data input/output port; an address input port; a mode selection input port; and an internal control circuit configured to: read a mode selection signal applied to the mode selection port; when the mode selection signal is in a first state, read an address of a row from the address input port and implement a read or write operation in this row; and when the mode selection signal is in a second state, read from the data input/output port an instruction signal and implement an operation including the simultaneous activation in read or write mode of at least two rows.

Abstract: A three-phase switching unit including three identical switching cells, each including at least one first electrically-controlled switch in series with at least one second spontaneous conduction switch, wherein the cells are arranged, around a conductive central area of a substrate, with a symmetry of revolution of order 3.

Abstract: An automated system of regulation of a patient's blood glucose, including: a blood glucose sensor; an insulin injection device; and a processing and control unit capable of predicting, from a physiological model, the future evolution of the patient's blood glucose over a prediction period, and of controlling the insulin injection device by taking the prediction into account, wherein the processing and control unit is capable of: a) calibrating the physiological model, taking into account the blood glucose measured by the sensor during a past observation period; b) at the end of the calibration, calculating an indicator representative of the error between the blood glucose estimated from the model and the real blood glucose measured by the sensor; and c) adjusting the prediction period by taking into account the value of the indicator.

Abstract: An image sensor including a plurality of pixels, each including: a semiconductor photodetection region; a metal region arranged on a first surface of the semiconductor region; a band-pass or band elimination interference filter arranged on a second surface of the semiconductor region opposite to the first surface; and between the semiconductor region and the metal region, a portion of the absorbing layer made of a material different from that of the semiconductor region, the absorbing layer being capable of absorbing, in a single passage, more than 30% of an incident radiation at the central wavelength of the pass band or of the stop band of the interference filter.

Abstract: A method of manufacturing an LED display device, including the successive steps of: a) transferring, onto a planar surface of a support plate made of a transparent material having its other surface structured and defining a plurality of microlenses, a plurality of semiconductor chips, each including at least one LED; and b) forming a network of conductive interconnection tracks contacting the chips by their surface opposite to the support plate.

Abstract: A temperature sensor supplying a measurement signal varying linearly to within 10% as a function of the temperature at least over a temperature range, including an oscillator supplied by a supply voltage and supplying a first oscillating signal, said oscillator including first MOS transistors, the voltage at each internal node of the oscillator having a dynamic equal to the supply voltage, the measuring signal corresponding to the supply voltage.

Abstract: A distributed device for the detection of a substance is disclosed, comprising: a distributed optical excitation source (21) including a first optical fiber (22) having a plurality of extraction regions (24), each extraction region (24) being adapted to extract part of the light carried by the first optical fiber (22) from said fiber; and a distributed acoustic sensor (25) including a second optical fiber (26).

Abstract: The invention concerns a measurement unit including: an electric ambient energy recovery generator; an element of capacitive storage of the electric energy generated by the generator; an electric battery; a first branch coupling an output node of the generator to a first electrode of the capacitive storage element; a second branch coupling a first terminal of the battery to the first electrode of the capacitive storage element; and an active circuit capable of transmitting a radio event indicator signal each time the voltage across the capacitive storage element exceeds a first threshold, wherein, in operation, the capacitive storage element simultaneously receives a first charge current originating from the generator via the first branch and a second charge current originating from the battery via the second branch.

Abstract: A calibration method for calibrating a reception chain comprising an input amplifier of an analogue-to-digital converter, and including the following successive steps: determining a rest gain as a function of the average power of the noise present on a digital signal from said converter; and setting the gain of the input amplifier at said rest gain when the average power of said digital signal is lower than a first threshold.

Abstract: A blood sugar regulation system including: a blood sugar sensor; an insulin injection device; and a processing and control unit predicting the future evolution of the blood sugar based on a physiological model and accordingly controlling the insulin injection device, wherein the processing and control unit is capable of: a) implementing a calibration of the model by taking into account a history of the measured blood sugar; b) at the end of the calibration step, determining whether the model is satisfactory or not based on at least one numerical indicator representative of the error between the blood sugar estimated based on the model and the real blood sugar measured by the sensor; and c) if the quality of the model is not satisfactory, controlling the insulin injection device without taking into account the predictions made from the model.

Abstract: A memory comprising an array of memory cells, each memory cell comprising: first and second resistive storage elements each having at least first and second terminals; and a first transistor having: a first main conducting node connected to the first terminal of the first resistive element and to a first column/row line of the array; and a second main conducting node connected to the first terminal of the second resistive element and to a second column/row line of the array.

Abstract: An optoelectronic device including a light emitting component and a field-effect transistor, the optoelectronic device including a first semiconductor layer made of a III-V or II-VI compound doped a first conductivity type; an active layer of the light-emitting component; and a second semiconductor layer made of the III-V or III-VI compound doped a second conductivity type opposite the first type, the active layer being sandwiched between the first and second semiconductor layers, wherein the channel of the field-effect transistor is located in the first semiconductor layer, the first semiconductor layer being uninterrupted between the field-effect transistor and the lightemitting component.

Abstract: A memory circuit including: a plurality of elementary storage cells arranged in an array of rows and of columns; a data input/output port; an address input port; a mode selection input port; and an internal control circuit configured to: read a mode selection signal applied to the mode selection port; when the mode selection signal is in a first state, read an address of a row from the address input port and implement a read or write operation in this row; and when the mode selection signal is in a second state, read from the data input/output port an instruction signal and implement an operation including the simultaneous activation in read or write mode of at least two rows.

Abstract: A method of manufacturing an optoelectronic device, including the successive steps of: a) transferring, onto a surface of a control integrated circuit including a plurality of metal connection pads, an active diode stack including at least first and second doped semiconductor layers of opposite conductivity types, so that the second layer of the stack is electrically connected to the metal pads of the control circuit; and b) forming in the active stack trenches delimiting a plurality of diodes connected to different metal pads of the control circuit.

Abstract: A circuit for counting photons, including: an input terminal intended to be connected to a detector of ionising radiation; an analogue stage for generating a pulsed signal, each pulse of which has an amplitude proportional to the energy released by an interaction of at least one photon in the detector; and a digital stage including: at least one first comparator for comparing the amplitude of the pulses to a first threshold; a differentiator circuit for determining periods in which the derivative of the pulse signal is of a given sign; at least one first logic gate for combining the outputs of the first comparator and the differentiator circuit; and at least one first counter for counting the number of pulses present on the output of the combining element.