Abstract: A magnetic field sensor comprises a substrate and a moving part which is displaced when subjected to a Laplace force. There is a gauge for measuring the displacement of the moving part. There is a suspended lever that is rotationally displaced about an axis of rotation at right angles to the direction of displacement of the moving part. The lever is connected to the moving part to transmit displacement of the moving part to the lever to cause rotation of the lever about the axis of rotation. The lever is also connected to a first part of the gauge. The sensor comprises a hinge that connects the lever to the substrate. The hinge allows the rotation of the lever about its axis of rotation and is rigid to allow for a lever arm effect. The second part of the gauge is fixed with no degree of freedom to the substrate.
Type:
Grant
Filed:
June 14, 2013
Date of Patent:
February 7, 2017
Assignee:
Commissariat à l'énergie atomique et aux énergies alternatives
Inventors:
Robert Philippe, Dirk Ettelt, Arnaud Walther
Abstract: The electrode for a structure of Metal-Insulator-Metal type is formed by a stack successively comprising a gold layer, a barrier layer made from electrically conducting oxide and a platinum layer. The electrically conducting oxide is advantageously a noble metal oxide, and preferentially ruthenium oxide. The electrode is arranged on a substrate. The gold layer of the electrode is separated from the substrate by an adhesion layer made from titanium dioxide. The electrode is used to fabricate a capacitor of Metal-Insulator-Metal type.
Type:
Application
Filed:
July 27, 2016
Publication date:
February 2, 2017
Applicants:
COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, STMICROELECTRONICS (CROLLES 2) SAS
Abstract: Unit cell including a receive antenna, a transmit antenna, and including first and second radiation surfaces separated from each other by a separation area, a phase-shift circuit comprising switches, each having an on, respectively off, state, wherein the corresponding switch allows, respectively blocks, the flowing of a current between the first and second radiation surfaces; a ground plane; a first printed circuit board including a first surface provided with the receive antenna, and a second opposite surface provided with the ground plane; a wafer of a semiconductor material including a first surface provide with first and second radiation surfaces and wherein the switches are formed in the separation area, monolithically with the transmit antenna.
Type:
Application
Filed:
July 28, 2016
Publication date:
February 2, 2017
Applicant:
COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
Inventors:
Antonio CLEMENTE, Laurent DUSSOPT, Bruno REIG
Abstract: A substrate is successively provided with a support (7), an electrically insulating layer (8), and a semi-conductor material layer (2). A first protective mask (1) completely covers a second area (B) of the semi-conductor material layer and leaves a first area (A) of the semi-conductor material layer uncovered. A second etching mask (3) partially covers the first area (A) and at least partially covers the second area (B), so as to define and separate a first area and a second area. Lateral spacers are formed on the lateral surfaces of the second etching mask (3) so as to form a third etching mask. The semi-conductor material layer (2) is etched by means of the third etching mask so as to form a pattern made from semi-conductor material in the first area (A), the first etching mask (3) protecting the second area (B).
Type:
Grant
Filed:
May 15, 2013
Date of Patent:
January 31, 2017
Assignee:
COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
Abstract: A method for manufacturing at least one semiconductor structure, and a component including a structure formed with the method, the method including: providing a substrate including at least one semiconductor silicon surface; forming an amorphous silicon carbide layer in contact with at least one part of the semiconductor silicon surface; forming the at least one semiconductor structure in contact with the silicon carbide layer, the structure including at least one part, as a contact part, in contact with the surface of the silicon carbide layer, which includes gallium.
Type:
Grant
Filed:
June 19, 2014
Date of Patent:
January 31, 2017
Assignee:
Commissariat à l'énergie atomique et aux énergies alternatives
Abstract: This process includes steps: a) providing a carrier substrate including a receiving face; b) depositing a nonstick coating on the receiving face, the nonstick coating including a central region and a peripheral region; and c) trimming the carrier substrate so as to remove the peripheral region of the nonstick coating and to form a recess on the periphery of the carrier substrate, in order to obtain the handle wafer. Also relates to a process for temporarily bonding a substrate to a handle wafer fabricated using the process described above. Furthermore relates to a handle wafer fabricated using the process described above.
Type:
Application
Filed:
December 15, 2014
Publication date:
January 26, 2017
Applicant:
COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
Inventors:
Pierre MONTMEAT, Laurent BALLY, Frank FOURNEL, Michel PELLAT
Abstract: A method for producing a structure by direct bonding of two elements, the method including: production of the elements to be assembled and assembly of the elements. The production of the elements to be assembled includes: deposition on a substrate of a TiN layer by physical vapor deposition, and deposition of a copper layer on the TiN layer. The assembly of the elements includes: polishing the surfaces of the copper layers intended to come into contact so that they have a roughness of less than 1 nm RMS and hydrophilic properties, bringing the surfaces into contact, and storing the structure at atmospheric pressure and at ambient temperature.
Type:
Application
Filed:
February 26, 2015
Publication date:
January 26, 2017
Applicant:
COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES
Inventors:
Paul GONDCHARTON, Lamine BENAISSA, Bruno IMBERT, Hubert MORICEAU
Abstract: A solar radiation absorber element for a thermal concentrating solar power plant is achieved by forming a selective coating on an outer surface of a substrate made from stainless steel, chosen from stainless steels presenting an aluminum content of more than 0.5% by weight. Formation of the selective coating includes a surface treatment step of the substrate, by polishing, and a heat treatment step of the substrate, in an oxidizing atmosphere, in a temperature range included between 550° C. and 650° C. The heat treatment in particular enables at least one intrinsically selective superficial thin layer to be formed on the outer surface of the substrate.
Type:
Grant
Filed:
June 7, 2012
Date of Patent:
January 24, 2017
Assignee:
COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
Abstract: A method for detecting an analyte in a bodily fluid includes placing the detector in contact with at least one metabolite resulting from the metabolism or degradation of the analyte. The contact between the detector and the metabolite produces an optically detectable signal. The detection method includes the detection of the metabolite only in gas form, said metabolite in gas form coming from the evaporation of at least a part of said metabolite. The detection is also carried out without contact between the bodily fluid and the detector. A dressing for implementing the detection method is also described.
Type:
Grant
Filed:
December 29, 2010
Date of Patent:
January 24, 2017
Assignee:
COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
Abstract: A crucible for formation of a crystalline material by solidification by growth on seed, including a bottom, at least one side wall orthogonal to the bottom of the crucible, and at least two marks extending on the inner surface of the at least one side wall in an orthogonal direction to the bottom of the crucible, for materialising the position of at least one seed designed to be positioned at the bottom of the crucible, the seed including at least first and second surfaces orthogonal to the bottom of the crucible. The respective positions of at least two of the marks on at least one of the side walls define, in the crystalline material, a first cutting plane tangent to the first surface of the seed and a second cutting plane tangent to the second surface of the seed.
Type:
Application
Filed:
March 30, 2015
Publication date:
January 19, 2017
Applicant:
COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
Abstract: Fabrication method of a graphene film including the following successive steps: placing the substrate and a solid carbon source in a reaction chamber, provided with a gas inlet; and heating the solid carbon source, by flow of a current in said source, under a gas flow, the gas being devoid of hydrocarbon, so as to convert at least a part of the solid carbon source into a graphene film on the substrate.
Type:
Application
Filed:
March 6, 2015
Publication date:
January 19, 2017
Applicant:
COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
Abstract: An antenna system including at least one antenna connected to a captured signal processing receiver, an antenna protection radome; and a plurality of electro-optical probes distributed on or inside of the radome.
Type:
Grant
Filed:
October 28, 2014
Date of Patent:
January 17, 2017
Assignee:
Commissariat à l'Energie Atomique et aux Energies Alternatives
Inventors:
Serge Bories, Lama Ghattas, Dominique Picard
Abstract: The invention relates to a method for regenerating the capacity of an electrochemical lithium battery, including the following steps: a) evaluating the quantity of lithium ions; b) when the evaluated lithium ion quantity is less than or equal to a threshold value, applying an electric current between the cathode or the anode and the container such as to cause the delithiation of the casing, the casing is also arranged to house an element providing both electric insulation and ionic conduction between the anode and cathode electrodes of the electrochemical cell and the casing, said casing including at least one lithium ion storage zone.
Type:
Application
Filed:
January 27, 2015
Publication date:
January 12, 2017
Applicant:
COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
Abstract: A system including: a first memory including several portions of one or more pages each, said memory including first and second ports that can simultaneously access, for reading and writing respectively, two distinct pages of portions of the memory; and a control circuit capable of performing write operations to the pages of the memory, each write operation to a page of the memory requiring a reading step of a former datum on said page via the first port, and including a writing step of a new datum to the page via the second port, taking account of the former datum.
Type:
Grant
Filed:
December 12, 2014
Date of Patent:
January 10, 2017
Assignee:
Commissariat à l'Énergie Atomique et aux Énergies Alternatives
Abstract: The electronic device comprises a substrate provided with a surface comprising a region of interest, the thermal behavior of which is to be monitored, and a system for detecting hot spots located in the region of interest. The system for detecting hot spots comprises at least three separate heat flow meters arranged on the surface of the substrate outside of the region of interest.
Type:
Grant
Filed:
July 27, 2012
Date of Patent:
January 10, 2017
Assignee:
COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
Abstract: A memory device includes a matrix of several columns of SRAM memory cells each including transistors forming a memory point, a read port and a write port, and such that the transistors of the read port and/or the P-type transistors include a second well with a conductivity type opposite that of a first well of the other transistors. The memory device also includes a polarization unit for the second wells, able to select and apply polarization potentials on the second wells, including a memory circuit of the polarization states of the second wells for each column or group of columns and a selection circuit applying a polarization potential on the second wells according to one of the values received as input, as a function of the stored polarization state associated with the column or group of columns.
Type:
Grant
Filed:
September 10, 2015
Date of Patent:
January 10, 2017
Assignee:
Commissariat à l'énergie atomique et aux énergies alternatives
Inventors:
Olivier Thomas, Bastien Giraud, Adam Makosiej
Abstract: This integrated circuit comprises: a substrate, a first electrical conductor comprising a first end, the first electrical conductor being electrically insulated from the substrate, a second electrical conductor comprising a second end, the second electrical conductor being electrically insulated from the substrate and electrically insulated from the first electrical conductor except at the second end which is mechanically and electrically directly in contact with the first end to form an electrical junction. The first and second ends are entirely buried to at least 5 ?m depth inside the substrate and produced, respectively, in different first and second materials chosen for the absolute value of the Seebeck coefficient of the junction to be greater than 1 ?V/K at 20° C. such that the combination of these first and second conductors forms a temperature probe.
Type:
Grant
Filed:
December 20, 2013
Date of Patent:
January 10, 2017
Assignee:
Commissariat à l'énergie atomique et aux énergies alternatives
Abstract: The present invention pertains to a mutated T7 RNA polymerase and its use, the T7 RNA polymerase being mutated at position 744, the glutamine (Q) being replaced by an amino acid selected from arginine (Q744R), leucine (Q744L) or proline (Q744P).
Type:
Grant
Filed:
October 8, 2012
Date of Patent:
January 10, 2017
Assignees:
bioMérieux, Commissariat à l'Energie Atomique et Aux Energies Alternatives
Inventors:
Jean-Claude Boulain, Janie Dassa, Frédéric Ducancel, Bruno H. Muller, Alain Troesch, Laurent Mesta
Abstract: A method for measuring a first magnetic field and the temperature of a magneto-resistive transducer includes producing, by the magneto-resistive transducer, a measurement signal dependent on the intensity of the first magnetic field and on the temperature of the magneto-resistive transducer. The method includes establishing a measurement of the intensity of the first magnetic field on the basis of the measurement signal produced and a measurement of the temperature of the magneto-resistive transducer. The method also includes generating a second magnetic field to combine with the first magnetic field to form a resultant magnetic field. The method further includes extracting from the measurement signal, the component which is dependent solely on the second magnetic field and establishing the temperature of the magneto-resistive transducer on the basis of the component extracted.
Type:
Grant
Filed:
March 29, 2013
Date of Patent:
January 10, 2017
Assignees:
Commissariat à l'énergie atomique et aux énergies alternatives, Renault S.A.S.
Abstract: A method for preparing a pattern to be printed on a plate or mask by electron beam lithography comprising the following steps: modelling of the pattern by breaking down this pattern into a set of elementary geometric shapes intended to be printed individually in order to reproduce said pattern and, for each elementary geometric shape of the model; determination of an electrical charge dose to be applied to the electron beam during the individual printing of the elementary shape, this dose being chosen from a discrete set of doses including several non-zero predetermined doses recorded in memory. The set of elementary geometric shapes is a bidimensional paving of identical elementary geometric shapes covering the pattern to be printed. In addition, when the doses to be applied to the elementary geometric shapes are determined, a discretization error correction is made by dithering.
Type:
Grant
Filed:
August 15, 2013
Date of Patent:
January 10, 2017
Assignees:
Commissariat à l'énergie atomique et aux énergies alternatives, ASELTA NANOGRAPHICS