Abstract: Device successively including a substrate including a metal layer capable of reflecting a radiation; a first layer of a III/N type alloy, p-type doped, and including a first surface, opposite the metal layer, the first surface being provided with cavities; a light-emitting layer made of a III/N-type alloy, capable of generating the radiation; a second layer of a III/N-type alloy, n-type doped, having the radiation coming out therethrough; wherein a non-metallic filling material transparent in the spectral range is arranged within the cavities.

Abstract: An electrochemical cell including a shell delimiting a space filled with an electrolytic solution, and a set of at least two different electrochemical systems selected from among a supercapacitor, a hybrid supercapacitor, and an accumulator, the set being arranged in the space filled with the electrolytic solution. A system for storing and restoring electric energy, or a vehicle, or a hybrid vehicle car can include such an electrochemical cell and can include such a system for storing and restoring electric energy.

Abstract: A method for making patterns on a substrate, includes forming an assembly guide on first and second areas of the substrate, the assembly guide having, compared to a reference surface, openings with an opening ratio in the first area greater than that of the second area; depositing a block copolymer layer on the substrate to entirely fill the assembly guide and form an over-thickness on the reference surface; assembling the block copolymer, resulting in an organised portion of the block copolymer layer inside the openings; thinning uniformly the block copolymer layer, until a thickness corresponding to the organised portion of the block copolymer layer is reached; eliminating one of the phases of the assembled block copolymer, resulting in a plurality of initial patterns extending into the layer of block copolymer; and transferring the initial patterns of the block copolymer layer into the substrate to form the final patterns.

Abstract: A method of transferring objects onto a substrate, or a moving substrate, the objects to be transferred being placed in a transfer area including an inlet and an outlet spaced apart from one another by two lateral edges opposite one another, and holding a carrier liquid forming a conveyor, the objects being held by a compact film of particles floating on the carrier liquid of the transfer area, in which the objects are moved with the particle film to be transferred onto the substrate when they reach the outlet.

Abstract: The method for performing activation of n-type or p-type dopants in a GaN-base semiconductor includes the following steps: providing a substrate including a GaN-base semiconductor material layer, performing the following successive steps at least twice: implanting electric dopant impurities in the semiconductor material layer, performing heat treatment so as to activate the electric dopant impurities in the semiconductor material layer, a cap layer covering the semiconductor material layer when the heat treatment is performed, two implantation steps of electric dopant impurities being separated by a heat treatment step.

Abstract: A method for preparing a mixture of a powder of an electrode active compound and of a powder of an electron conducting compound is disclosed. According to some aspects, the method includes preparing a liquid medium containing the powder of the electrode active compound and the powder of the electron conducting compound, subjecting the liquid medium containing the powder of the electrode active compound and the powder of the electron conducting compound to the action of high energy ultrasonic waves, removing the liquid medium, and collecting the mixture of the powder of the electrode active compound and of the powder of the electron conducting compound. According to some aspects, an electrode including the mixture as an electrochemically active material, a cell including the electrode, and an accumulator or battery including one or more of these cells are disclosed.

Abstract: FinFET transistor comprising at least: one fin that forms a channel, a source and a drain, comprising an alternating stack of first portions of silicon-rich SiGe and of second portions of a dielectric or semiconductor material, and third portions of germanium-rich SiGe arranged at least against lateral faces of the first portions, one gate that covers the channel, and wherein each one of the third portions comprises faces with a crystal orientation [111] covered by the gate.

Abstract: A method of detecting a point of contact between a tip of an instrument and a writing support, the instrument being one of a pen and an eraser, and the method comprising determining, with the aid of a magnetic object fixed without any degree of freedom on the instrument, the height of a point of the instrument with respect to a bearing face of a tablet. The bearing face constituting the writing support or supporting the writing support. The method further includes: comparing the height determined with a preconfigured contact threshold, and detecting a point of contact between the tip of the instrument and the writing support if the height determined is less than the contact threshold and, in the converse case, detecting no point of contact between the tip of the instrument and the writing support.

Abstract: MEMS and/or NEMS differential pressure measurement sensor comprising at least one first membrane and at least one second membrane, each suspended from a substrate, the first membrane having a face subjected to a reference pressure and a second face subjected to a first pressure to be detected, the second membrane having a first face subjected to the reference pressure and a second face subjected to a second pressure to be detected, a rigid beam of longitudinal axis articulated with respect to the substrate by a pivot link around an axis, said beam being solidly connected by a first zone to the first membrane and by a second zone to the second membrane such that the pivot link is situated between the first zone and the second zone of the beam, a sensor of measuring the movement of the beam around the axis, said sensor being arranged at least in part on the substrate.

Abstract: A method for configuring a device for detecting a situation from a set of situations where a physical system comprises the following steps: reception of a learning sequence corresponding to a given situation of the physical system; determination of parameters of a hidden-state Markov statistical model recorded in the detection device and relating to the given situation, on the basis of a prior initialization of these parameters.

Abstract: A method for selecting a router node in a LLN (Low power and Lossy Network) type telecommunication network wherein, upon receipt by a router node of a data packet from a host node or an adherence request to a multicast group from a host node, the router node transmits to a root node a MER_Request request of configuration as a multicast router node to serve the host node, and upon receipt of the MER_Request request, the root node determines, from an association table, a configuration of the router node and transmits to the router node a MER_Reply reply message including the determined configuration.

Abstract: The present invention concerns a method for controlling the emitting wavelength of a laser source (10) for a passive optical network, the laser source (10) comprising: a first Bragg mirror (12), a second Bragg mirror (14), a cavity (16) delimited by both Bragg mirrors (12, 14), the cavity (16) comprising an optical filter (18) and an active medium (20), the method comprising the steps of: measuring the temperature of the active medium (20), setting the temperature of the optical filter (18) in accordance with the measured temperature of the active medium (20), the temperature of the optical filter (18) being higher than the measured temperature.

Abstract: A method for producing a solar radiation absorber element, for a concentrating thermal solar power plant, including the formation of a selective coating on an outer surface of a steel substrate, formation of the selective coating including the following successive steps: providing a steel substrate having a chromium content between 6% and 12.5% by weight, and an aluminium content less than or equal to 0.05% by weight, performing heat treatment so as to form an oxide layer on the surface of the substrate.

Abstract: A restoration device of at least one silicon-based photovoltaic solar cell is provided with a support of the cell and a charge carriers generator configured to generate charge carriers in the photovoltaic solar cell. The device is further provided with a tank designed to be filled by a liquid, and the support is configured to place the photovoltaic solar cell in the liquid.

Abstract: A pyrotechnic device including at least one layer of a pyrotechnic material deposited on all or part of an electronic circuit, the pyrotechnic material being capable of being triggered by a heating of the circuit due to a failure thereof.

Abstract: A spin valve magnetoresistance element has an even number of free layer structures for which half has an antiferromagnetic coupling and the other half has a ferromagnetic coupling with respect to associated pinned layers. The different couplings are the result of an even number different spacer layers having respective different thicknesses.

Abstract: The method for performing activation of p-type dopants in a GaN-based semiconductor includes a first step of providing a substrate including (i) a GaN-based semiconductor material layer including p-type electric dopant impurities, (ii) a cap block devoid of any silicon-based compound, in contact with the semiconductor material layer, and (iii) a silicon-based covering layer covering the cap block. The method includes a second heat treatment step at a temperature of more than 900° C. so as to activate the p-type electric dopant impurities in the semiconductor material layer.

Abstract: A voltage-controlled spintronic device includes a magnetic layer having an effective anisotropy Keff; a non-magnetic insulating layer; a contact layer; the magnetic layer having an anisotropy switching threshold such that application of a polarization voltage Vmax allows switching of the effective anisotropy Keff from a direction perpendicular to the reference plane to a direction in the reference plane or vice versa, the magnetic layer including a first layer, with thickness tB, having a volume anisotropy KVB; a second layer, with thickness tA, having a surface anisotropy KSA and a volume anisotropy KVA; the surface anisotropy KSA and the volume anisotropies KVA and KVB respecting, over a given operating temperature range: Min(KSA(V=0), KSA(V=Vmax))<?{KVBtB+KVAtA)<Max(KSA(V=0), KSA(V=Vmax)). KSA(V=0) is the surface anisotropy when no polarization voltage is applied. KSA(V=Vmax) is the surface anisotropy when a polarization voltage Vmax is applied.

Abstract: This method for estimating the quantity of an analyte contained in a liquid includes the following steps: introducing the liquid into a fluid chamber; mixing the liquid with a bi-specific reagent, the bi-specific reagent being configured for grafting on both a particle and an analyte present in the liquid; lighting the fluid chamber using an excitation beam emitted by a light source, the beam extending through the fluid chamber; acquiring at least one image using a matrix photodetector, the image being formed by radiation transmitted by the lighted fluid chamber; and estimating, from at least one acquired image, the quantity of said analyte in the liquid.

Abstract: A system for plotting a mark drawn on a writing medium, comprising a tool including a first and a second permanent magnet. The first permanent magnet is mechanically linked to a tip. There is a network of magnetometers having N triaxial magnetometers and an electronic computer programmed in order to: a) determine, from the measurements from the triaxial magnetometers, the positions of the two permanent magnets and the orientations of the magnetic moments of said two permanent magnets and b) calculate the relative position and/or relative orientation of the magnetic moment of the first permanent magnet in relation to the orientation of the magnetic moment of the second permanent magnet from the results of step a). The calculated relative position and/or orientation is then used by a device as a value of a physical quantity that is representative of the pressure exerted on the tip.