Abstract: An inductive plasma torch operating at atmospheric pressure is used for wafer or glass substrate processing. Said torch employs a linear type of plasma confinement. This linear torch is particularly suitable for photoresist etching and processes in which it has the advantages of high chemical isotropic etch rate and low plasma damage.

Abstract: A process of producing relatively large, dense, free-standing silicon carbide articles by chemical vapor deposition is enabled by the provision of specially designed isolation devices. These devices segregate silicon carbide deposits on the intended portions of substrates, thereby alleviating the need to fracture heavy silicon carbide deposits in order to remove, or otherwise move, the substrate, with the heavy deposit thereon, from the deposition furnace. The isolation devices enable the use of more efficient vertically extended vacuum furnaces. The isolation devices also enable the commercial production of relatively dense, large, thin-walled, silicon carbide shells.

Abstract: The machinability of water-clear zinc sulfide articles produced by chemical vapor deposition and high temperature, high isostatic pressure (HIP) treatment is enhanced by extending the time over which the article is cooled following the HIP treatment. The resulting low stress, water-clear zinc sulfide articles can be more accurately finished/machined to precise shapes, such as are required in optical applications, than was previously possible.

Abstract: An inductive plasma torch operating at atmospheric pressure is used for wafer or glass substrate processing. Said torch employs a linear type of plasma confinement. This linear torch is particularly suitable for photoresist etching and processes in which it has the advantages of high chemical isotropic etch rate and low plasma damage.

Abstract: The machinability of water-clear zinc sulfide articles produced by chemical vapor deposition and high temperature, high isostatic pressure (HIP) treatment is enhanced by extending the time over which the article is cooled following the HIP treatment. The resulting low stress, water-clear zinc sulfide articles can be more accurately finished/machined to precise shapes, such as are required in optical applications, than was previously possible.

Abstract: An inductive plasma torch operating at atmospheric pressure is used for wafer or glass substrate processing. Said torch employs a linear type of plasma confinement. This linear torch is particularly suitable for photoresist etching and processes in which it has the advantages of high chemical isotropic etch rate and low plasma damage.

Abstract: An improved chemical vapor deposition (CVD) process which is capable of providing low-scatter water-clear zinc sulfide bulk material is described. The improved method also minimizes bowing, or induced curvature, in the product bulk material. The product zinc sulfide material can be processed into thicker windows and optical devices than was possible with the articles produced by the previous CVD process. The improved process provides for a controlled gradual initial ramping up of the deposition rate and a controlled initial ramping down of the substrate temperature.

Abstract: Articles having at least one precision replicated surface are formed by chemical vapor deposition on a substrate surface which has been precision shaped and finished as the converse of the desired precision surface of the article. The substrate surface is provided with a thin release coating which adheres to the substrate when the article is removed thereby allowing the substrate to be reused. The method is particularly advantageous for forming the interior surfaces of domes and asymmetrical optical surfaces of zinc sulfide.

Abstract: The surface of a zinc selenide substrate is ground to curve in the opposite direction from that which occurs due to the bimetallic effect when zinc sulfide is deposited on a flat substrate by the chemical vapor deposition process. The bowing of the interface that occurs upon cooling of the hot laminate when the surface of the substrate is flat before deposition is compensated for by the pre-figured bowing. A distortion free window for the transmission of infra-red radiation is provided by this invention.

Abstract: The surface of a zinc selenide substrate is ground to curve in the opposite direction from that which occurs due to the bimetallic effect when zinc sulfide is deposited on a flat substrate by the chemical vapor deposition process. The bowing of the interface that occurs upon cooling of the hot laminate when the surface of the substrate is flat before deposition is compensated for by the pre-figured bowing. A distortion free window for the transmission of infra-red radiation is provided by this invention.

Abstract: A method and device are provided for reducing the loss of CVD manufactured parts due to cracking caused by mechanical stresses resulting from the mismatch of the coefficient of thermal expansion between the chemical vapor deposed part and the mandrel plate. The method and device provide a removable mandrel support which is removed after the chemical vapor deposition but prior to the cooling of the CVD part and the mandrel plates. This permits the CVD part to contract upon cooling without mechanical restriction, thus reduce cracking caused by contraction of the CVD part against a mold which does not contract substantially.

Abstract: A process and apparatus for the manufacture of chemical vapor deposition deposited structures which comprises supplying a solid zinc metal continuously to a heated retort at a controlled rate. The retort is a body of refractory material having a top and a bottom and a traverse cross section which decreases from the top to the bottom of the retort. The zinc is melted, vaporized, and conveyed to a chemical vapor deposition zone defined by a number of heated mandrel plates where it is reacted with either hydrogen sulfide or hydrogen selenide to form a chemical vapor deposited structure. The process and apparatus provide for improved control over the evaporation rate of zinc and a reduction in the furnace volume needed to melt and vaporize the zinc.

Abstract: Silicon carbide is produced by chemical vapor deposition at temperatures from 1340.degree.-1380.degree. C., deposition chamber pressures of 180-200 torr, H.sub.2 /methyltrichlorosilane ratio of 4-10 and deposition rate of 1-2 .mu.m/min. Furthermore, H.sub.2 supplied as a part of the gas stream contains less than about 1 part per million (ppm) O.sub.2 gas, and various means are provided to exclude particulate material from the deposition chamber. The silicon carbide is polishable to <5 .ANG. RMS as measured on a Talystep mechanical profiler and has a thermal conductivity of at least about 300 W/mk. The silicon carbide is particularly suitable for applications where high polishability and thermal conductivity is desired, such as hard disc drives and read/write heads of head-disc assemblies, and also optical apparatus which require a very high polish.

Abstract: The surface of a zinc selenide substrate is ground to curve in the opposite direction from that which occurs due to the bimetallic effect when zinc sulfide is deposited on a flat substrate by the chemical vapor deposition process. The bowing of the interface that occurs upon cooling of the hot laminate when the surface of the substrate is flat before deposition is compensated for by the pre-figured bowing. A distortion free window for the transmission of infra-red radiation is provided by this invention.

Abstract: Disclosed is a metalorganic chemical vapor deposition (MOCVD) process of depositing an indium oxide or an indium/tin oxide film on a substrate using indium alkyl etherate or indium alkyl etherate and organotin compound precursors, respectively.

Abstract: Tungsten disilicide (WSi.sub.x) films are deposited onto doped or undoped polysilicon by reducing WF.sub.6 with a mixture of dichlorosilane (SiH.sub.2 Cl.sub.2) and disilane (Si.sub.2 H.sub.6). The addition of disilane provides a mechanism for increasing the resistivity (silicon to tungsten ratio) of the film without adversely affecting the uniformity or deposition rate of the film. A high silicon to tungsten ratio prevents degradation of the silicide film and the underlaying polysilicon film during subsequent growth of an oxide (SiO.sub.2) dielectric. The excess silicon in the film also provides desirable etching and annealing characteristics.

Abstract: A compact load lock and processing chamber is disclosed in which a moveable member forms a closure for both a load lock volume and an article processing volume. The moveable member is connected to fixed members by a flexible diaphragm which provides a non-sliding seal.

Abstract: The temperature of a wafer in a vacuum chamber is measured by way of a tube, containing a thermocouple, extending through a wall of the chamber. The tube is sealed at one end to an aperture in the wall of the system and sealed at the other end with removable sealant.

Abstract: A process is disclosed for depositing tungsten non-selectively on conductors and dielectrics without the use of an adhesive interlayer. The process comprises an argon pre-treatment followed by low power plasma deposition to nucleate the tungsten. A thick, adherent layer of tungsten is then deposited.

Abstract: A process is disclosed for reducing lateral encroachment and silicon consumption in LPCVD of tungsten. The process comprises a low temperature deposition of a thin layer of tungsten, followed by annealing in nitrogen at high temperature, follows by deposition of a thick layer of tungsten.